Realization of high-power and high-efficiency light-emitting devices based on AlInN
| Project/Area Number |
15K13344
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Crystal engineering
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| Research Institution | Tohoku University |
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Principal Investigator |
Kojima Kazunobu 東北大学, 多元物質科学研究所, 准教授 (30534250)
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| Co-Investigator(Kenkyū-buntansha) |
山崎 芳樹 東北大学, 多元物質科学研究所, 助教 (20730352)
秩父 重英 東北大学, 多元物質科学研究所, 教授 (80266907)
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| Project Period (FY) |
2015-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2016: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2015: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
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| Keywords | AlInN / 深紫外光源 / 非極性面 / 光物性 |
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| Outline of Final Research Achievements |
Structural and optical characterization were performed for thin m-plane AlInN epitaxial nanostructures grown by metalorganic vapor phase epitaxy. Crystal qualities of AlInN were remarkably improved via coherent growth on a low defect density m-plane freestanding GaN substrate prepared by hydride vapor phase epitaxy. All the epilayers unexceptionally suffer from uniaxial or biaxial anisotropic in-plane stress. However, full-width at half-maximum values of the x-ray x-rocking curves were nearly unchanged as the underlayer values being 80 ~ 150 arcsec. Applying the m-plane AlInN epitaxial nanostructures, planar vacuum fluorescent display devices emitting polarized DUV, blue, and green light were demonstrated.
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Report
(3 results)
Research Products
(12 results)
