| Project/Area Number |
15K13345
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Crystal engineering
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| Research Institution | Chiba University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
MORITA KEN 千葉大学, 大学院工学研究院, 准教授 (30448344)
MA BEI 千葉大学, 大学院工学研究院, 助教 (90718420)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2017: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2016: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2015: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | LOフォノン / THz発光 / 界面フォノンポラリトン / THz吸収 / 量子干渉 / THz / 中赤外 / 輻射 / LOフォノン共鳴 / 電磁誘起透明化 / ファノ効果 / 金属半導体複合構造 / フォノンポラリトン / 電気双極子 / 縦光学フォノン / テラヘルツ波 |
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| Outline of Final Research Achievements |
The research theme is the THz emission resonating with LO phonon or LO phonon-plasmon coupling modes and the control of optical absorption by using quantum interferences in the frequency region where the lasing in continuous mode at temperatures higher than room temperature is difficult for former devices and the electromagnetic transparency to obtain optical gain at the frequency region. It has been found that the electric dipoles resonating with LO phonon are generated in the metal/semiconductor stripe structures on the surface for various materials. The emission at approximately 280/cm and with the width of 13/cm has been obtained for GaAs. The control of optical absorption by the quantum interference in the system consisting of 2 LO modes and intervalence band transition has been found for p-GaInP. These results reveals that the ultra low threshold lasing is possible using LO phonon system.
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