Ultra-thin Bi layered films
| Project/Area Number |
15K13360
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
中辻 寛 東京工業大学, 物質理工学院, 准教授 (80311629)
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| Project Period (FY) |
2015-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2016: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2015: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | ビスマス / 超薄膜 / 走査トンネル顕微鏡 / 角度分解光電子分光 |
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| Outline of Final Research Achievements |
Ultra-thin Bi(110) islands were obtained by the deposition of Bi atoms at the Si(111) Si(111)√3x√3-B substrate at room temperature. The Bi islands had the shape elongated to one of the six specific orientations due to the commensuration of the Bi(110) and Si(111)√3x√3 unit lattices. The atomically-resoled STM images showed that the islands were the Bi(110) islands. However, the Bi(110) islands had the same atomic arrangement at the top surface of the islands in both the trivial A7 and possibly non-trivial, two-dimensional topological BP-like crystal phases. Thus, we characterized the electronic state of the islands using STS and ARPES. In both measurements, the islands were suggested to have the BP-like structure.
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Report
(3 results)
Research Products
(14 results)
