| Project/Area Number |
15K13948
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka University |
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Principal Investigator |
Yamada Shinya 大阪大学, 基礎工学研究科, 助教 (30725049)
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| Co-Investigator(Kenkyū-buntansha) |
浜屋 宏平 大阪大学, 基礎工学研究科, 教授 (90401281)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2017: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2016: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2015: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | フレキシブル / 薄膜トランジスタ / ゲルマニウム / ホイスラー合金 / スピントロニクス |
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| Outline of Final Research Achievements |
In this project, we have studied an innovation of flexible system-in-display devices with low power consumption. We have obtained the following results. First, we have developed a method for demonstrating pseudo-single-crystalline, i.e., large-area, (111)-oriented, and high-crystallinity Ge films below 300 C on glass and flexible substrates. Next, by developing a low-temperature fabrication process for the gate-stack structure on Ge(111), we have observed a reasonable p-channel transistor operation in pseudo-single-crystalline Ge thin film transistors on glass and flexible substrates. Finally, we have examined crystal growth of a Heusler alloy, one of candidate spintronic materials, on the pseudo-single-crystalline Ge films. From now on, we should enhance the performance of the thin-film transistors and demonstrate the high-performance spintronic devices.
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