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Fabrication of bismuth-containing narrow-bandgap semimetal-semiconductor alloys and their application to photonic devices

Research Project

Project/Area Number 16H02105
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Crystal engineering
Research InstitutionKyoto Institute of Technology

Principal Investigator

Yoshimoto Masahiro  京都工芸繊維大学, その他部局等, 理事・副学長 (20210776)

Co-Investigator(Kenkyū-buntansha) 西中 浩之  京都工芸繊維大学, 電気電子工学系, 助教 (70754399)
上田 大助  京都工芸繊維大学, グリーンイノベーションラボ, 特任教授 (60540424)
山下 兼一  京都工芸繊維大学, 電気電子工学系, 教授 (00346115)
石田 秀俊  京都工芸繊維大学, グリーンイノベーションセンター, シニア・フェロー (00572009)
Project Period (FY) 2016-04-01 – 2019-03-31
Project Status Completed (Fiscal Year 2018)
Budget Amount *help
¥35,360,000 (Direct Cost: ¥27,200,000、Indirect Cost: ¥8,160,000)
Fiscal Year 2018: ¥6,370,000 (Direct Cost: ¥4,900,000、Indirect Cost: ¥1,470,000)
Fiscal Year 2017: ¥9,100,000 (Direct Cost: ¥7,000,000、Indirect Cost: ¥2,100,000)
Fiscal Year 2016: ¥19,890,000 (Direct Cost: ¥15,300,000、Indirect Cost: ¥4,590,000)
Keywords半導体 / 半金属 / 分子線エピタキシー / 結晶成長 / 半金属半導体合金 / レーザダイオード
Outline of Final Research Achievements

High quality GaAsBi exhibiting bright luminance was fabricated by molecular beam epitaxy. The tail states of GaAsBi, which prevents the reduction of the threshold current of GaAsBi laser diodes and the improvement of the open circuit voltage of GaAsBi solar cells, are analyzed based on the luminescence characteristics and the spectral response of GaAsBi photodiodes. It has been found that the tail states are significantly reduced only by raising the growth temperature from 360°C to 380°C for only 20°C. In addition, GaAsBi laser diodes, GaAsBi solar cells, and GaNAsBi photodiodes were fabricated.

Academic Significance and Societal Importance of the Research Achievements

ビスマス含有半金属半導体混晶はGaAsやInP基板に格子整合しながら禁制帯幅が0.3から1.4 eVをカバーしたⅢ-Ⅴ族半導体である。この半導体は、Biの混入による大きなナローギャップ効果、禁制帯幅の温度無依存化、大きなスピン軌道相互作用などの特異な物性を示す。本研究の成果は、高品位ビスマス含有半金属半導体混晶を得るための結晶成長の指針を明らかにし、また、この混晶を用いてレーザダイオードや太陽電池、フォトダイオードを試作したもので、この混晶の特性を活かしたフォトニックデバイスへの応用を切り開くことにつながる。

Report

(4 results)
  • 2018 Annual Research Report   Final Research Report ( PDF )
  • 2017 Annual Research Report
  • 2016 Annual Research Report
  • Research Products

    (18 results)

All 2020 2019 2018 2017 2016

All Journal Article (1 results) (of which Peer Reviewed: 1 results) Presentation (13 results) (of which Int'l Joint Research: 4 results,  Invited: 1 results) Book (3 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] PEDOT:PSS/GaAs<sub>1-x</sub>Bi<sub>x</sub> organic-inorganic solar cells2019

    • Author(s)
      Hasegawa Sho、Kakuyama Kyohei、NISHINAKA Hiroyuki、YOSHIMOTO Masahiro
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 印刷中 Issue: 6 Pages: 060907-060907

    • DOI

      10.7567/1347-4065/ab1e97

    • NAID

      210000155900

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Presentation] Growth temperature dependence of GaAsBi tail states probed by sub-band absorption and photoluminescence characteristics2019

    • Author(s)
      Sho Hasegawa, Kyohei Kakuyama, Hiroyuki Nishinaka and Masahiro Yoshimoto
    • Organizer
      10th International Workshop on Bismuth-Containing Semiconductors
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Fabrication of PEDOT:PSS/GaAs1-xBix solar cells2018

    • Author(s)
      ho Hasegawa, Kyohei Kakuyama, Pallavi Patil, Hiroyuki Nishinaka and Masahiro Yoshimoto
    • Organizer
      9th International Workshop on Bismuth-Containing Semiconductors
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] PEDOT:PSS/GaAs1-xBix有機無機ハイブリッド太陽電池の製作2018

    • Author(s)
      長谷川将,岳山恭平,鈴木耕作,西中浩之,吉本昌広
    • Organizer
      第65回春季応用物理学会学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] PEDOT:PSS/GaAsBi太陽電池の製作と評価2018

    • Author(s)
      長谷川将,岳山恭平,西中浩之,吉本昌広
    • Organizer
      日本材料学会半導体エレクトロニクス部門委員会平成30年度第1回研究会
    • Related Report
      2018 Annual Research Report
  • [Presentation] GaAsBiフォトダイオードの分光感度特性2018

    • Author(s)
      岳山恭平,鈴木耕作,長谷川将,西中浩之,吉本昌広
    • Organizer
      日本材料学会半導体エレクトロニクス部門委員会平成29年度第1回研究会
    • Related Report
      2018 Annual Research Report
  • [Presentation] PEDOT:PSS/GaAs1-xBix;有機無機ハイブリッド太陽電池の製作2018

    • Author(s)
      長谷川 将, 岳山恭平,鈴木耕作, 西中浩之, 吉本昌広
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] MBE growth of GaAsBi/GaAs on (100) and (411) GaAs Substrates2018

    • Author(s)
      Pallavi Patil, Fumitaro Ishikawa, Satoshi Shimomura, Hiroyuki Nishinaka,Masahiro Yoshimoto
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] GaAsBi フォトダイオードの分光感度特性2017

    • Author(s)
      岳山恭平、鈴木耕作、長谷川将、西中浩之、吉本昌広
    • Organizer
      平成29年度第2回半導体エレクトロニクス部門委員会第1回研究会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Fabrication of GaAsBi photodiodes and their spectral response2017

    • Author(s)
      K. Kakuyama, K. Suzuki, H. Nishinaka, M. Yoshimoto
    • Organizer
      8th International Workshop on Bismuth-Containing Semiconductors
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] GaAs1-xBix フォトダイオードの分光感度特性2017

    • Author(s)
      岳山恭平、鈴木耕作、長谷川将、西中浩之、吉本昌広
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Characterizing tail states of GaAsBi photodiodes by threir spectral response2017

    • Author(s)
      K. Kakuyama, K. Suzuki, S. Hasegawa, H. Nishinaka, M. Yoshimoto
    • Organizer
      The 36th Electronic Materials Symposium
    • Related Report
      2017 Annual Research Report
  • [Presentation] 高含有率GaAs1-xBixの特異なPL特性2016

    • Author(s)
      芝田悠将, 来馬英樹, 吉岡諒, 西中浩之, 吉本昌広
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      新潟市
    • Year and Date
      2016-09-13
    • Related Report
      2016 Annual Research Report
  • [Presentation] Fabrication of GaAsBi laser diodes with 1.1-μm emission wavelength2016

    • Author(s)
      M. Yoshimoto, R. Yoshioka, H. Kuruma, H. Nishinaka
    • Organizer
      7th International Workshop on Bismuth-Containing Semiconductors
    • Place of Presentation
      上海、中国
    • Year and Date
      2016-07-24
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Book] Molecular Beam Epitaxy: Materials and Device Applications2020

    • Author(s)
      Masahiro Yoshimoto(分担執筆) (Hajime Asahi, Yoshiji Horikoshi編)
    • Total Pages
      354
    • Publisher
      Wiley
    • ISBN
      9781119355014
    • Related Report
      2017 Annual Research Report
  • [Book] Bismuth-Containing Alloys and Nanostructures2019

    • Author(s)
      Pallavi Kisan Patil1, Satoshi Shimomura, Fumitaro Ishikawa, Esperanza Luna and Masahiro Yoshimoto (分担執筆)Shumin Wang, Pengfei Lu(編集)
    • Total Pages
      471
    • Publisher
      Springer
    • ISBN
      9789811380785
    • Related Report
      2018 Annual Research Report
  • [Book] Molecular Beam Epitaxy 2nd Edition From Research to Mass Production2018

    • Author(s)
      Masahiro Yoshimoto, Kunishige Oe (分担執筆) Mohamed Henini(編集)
    • Total Pages
      788
    • Publisher
      Elsevier
    • ISBN
      9780128121368
    • Related Report
      2018 Annual Research Report
  • [Patent(Industrial Property Rights)] 半導体材料、基体、基体の製造方法および半導体レーザ2016

    • Inventor(s)
      西中浩之、吉本昌広、来馬英樹、芝田 悠将
    • Industrial Property Rights Holder
      西中浩之、吉本昌広、来馬英樹、芝田 悠将
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2016-142023
    • Filing Date
      2016-07-20
    • Related Report
      2016 Annual Research Report

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Published: 2016-04-21   Modified: 2020-03-30  

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