Study on nitrogen-polar InGaAs-channel high electron mobility transistors

• Project/Area Number: 16H04341
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Tohoku University
• Principal Investigator: Suemitsu Tetsuya 東北大学, 国際集積エレクトロニクス研究開発センター, 教授 (90447186)
• Co-Investigator(Kenkyū-buntansha): 松岡 隆志 東北大学, 金属材料研究所, 教授 (40393730)
• Project Period (FY): 2016-04-01 – 2019-03-31
• Project Status: Completed (Fiscal Year 2018)
• Budget Amount: ¥16,640,000 (Direct Cost: ¥12,800,000、Indirect Cost: ¥3,840,000); Fiscal Year 2018: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000); Fiscal Year 2017: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000); Fiscal Year 2016: ¥8,450,000 (Direct Cost: ¥6,500,000、Indirect Cost: ¥1,950,000)
• Keywords: トランジスタ / 窒化物半導体 / マイクロ波・ミリ波 / 高電子移動度トランジスタ / 窒素極性窒化物 / 電子デバイス・機器 / 先端機能デバイス / 結晶成長 / 電界効果トランジスタ / 窒素極性 / デバイス設計・製造プロセス / マイクロ・ナノデバイス / 半導体物性

Outline of Final Research Achievements

Growth and fabrication of (In)GaN/AlGaN high electron mobility transistors (HEMTs) using N-polar GaN materials were studied. Flat surface and two-dimensional electron gas were realized by substrates with an off-cut angle of as small as 0.8 degree. This enables to achieve isotropic electrical characteristics in N-polar GaN HEMTs. To reduce the deep levels at the gate insulator interface, reverse bias annealing was carried out and the reduction of the interface trap density was confirmed in N-polar HEMTs as it was reported for gallium-polar HEMTs.

Academic Significance and Societal Importance of the Research Achievements

窒素極性窒化物半導体材料を用いた高電子移動度トランジスタ（HEMT）を国内では初めて実現した。また、世界的にも、先行研究と比較してオフ角が小さい基板上に平坦なエピタキシャル結晶を成長させることに成功し、これまで確認されていたウエハ面内での素子特性の異方性を抑えることが出来た。また、ゲート絶縁膜界面の品質向上に逆バイアスアニール処理が効果的であることを窒素極性HEMTで初めて確認した。

Research Products

• [Journal Article] N-polar GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching (2018)
  • Author(s): K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, T. Matsuoka
  • Journal Title: Applied Physics Express Volume: 11 Issue: 1 Pages: 015503-015503
  • DOI: 10.7567/apex.11.015503
  • NAID: 210000136090
  • Peer Reviewed / Int'l Joint Research
• [Presentation] Reverse bias annealing effects in N-polar GaN/AlGaN/GaN MIS-HEMTs (2018)
  • Author(s): T. Suemitsu, K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Matsuoka
  • Organizer: Compound Semiconductor Week 2018
  • Int'l Joint Research
• [Presentation] Advanced plasma process for GaN high electron mobility transistors (2018)
  • Author(s): T. Suemitsu
  • Organizer: International Workshop on Plasma and Bionano Devices
  • Int'l Joint Research / Invited
• [Presentation] Reverse-bias-induced virtual gate phenomenon in N-polar GaN HEMTs (2018)
  • Author(s): T. Suemitsu, K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Matsuoka
  • Organizer: MRS Fall Meeting 2018
  • Int'l Joint Research
• [Presentation] 窒素極性GaN MIS-HEMT における逆バイアスアニールの効果 (2018)
  • Author(s): 末光哲也, K. Prasertsuk, 谷川智之, 木村健司, 窪谷茂幸, 松岡隆志
  • Organizer: 第79回応用物理学会秋季学術講演会
• [Presentation] 窒素極性GaN HEMT の現状と今後の展望 (2018)
  • Author(s): 末光哲也
  • Organizer: 日本学術振興会第162委員会第112研究会
  • Invited
• [Presentation] Reduced gate leakage current in N-polar GaN MIS-HEMTs (2017)
  • Author(s): K. Prasertsuk, A. Miura, S. Tanaka, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, T. Matsuoka
  • Organizer: 第64回応用物理学会春季学術講演会
  • Place of Presentation: 横浜
  • Year and Date: 2017-03-14
• [Presentation] N-polar GaN/AlGaN/GaN MIS-HEMTs on sapphire substrates with small off-cut for flat interface by MOVPE (2017)
  • Author(s): K. Prasertsuk, T. Tanikawa, T. Kimura, T. Suemitsu, T. Matsuoka
  • Organizer: Compound Semiconductor Week
  • Int'l Joint Research
• [Presentation] N-polar GaN MIS-HEMTs with flat interface grown by optimized MOVPE (2017)
  • Author(s): K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, T. Matsuoka
  • Organizer: 電子情報通信学会電子デバイス研究会
• [Presentation] Threshold voltage engineering of recessed MIS-gate N-polar GaN HEMTs (2017)
  • Author(s): K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, T. Matsuoka
  • Organizer: 第78回応用物理学会秋季学術講演会
• [Presentation] MOVPE growth of N-polar GaN/AlGaN/GaN heterostructure on small off-cut substrate for flat interface (2016)
  • Author(s): K. Prasertsuk, S. Tanaka, T. Tanikawa, K. Shojiki, T. Kimura, A. Miura, R. Nonoda, F. Hemmi, S. Kuboya, R. Katayama, T. Suemitsu, T. Matsuoka
  • Organizer: 43rd International Symposium on Compound Semiconductors
  • Place of Presentation: Toyama, Japan
  • Year and Date: 2016-06-26
  • Int'l Joint Research