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Development of graphite intercalation compound integration technology on insulating substrate and its device applications.

Research Project

Project/Area Number 16K14223
Research Category

Grant-in-Aid for Challenging Exploratory Research

Allocation TypeMulti-year Fund
Research Field Electronic materials/Electric materials
Research InstitutionNational Institute of Advanced Industrial Science and Technology

Principal Investigator

Murakami Katsuhisa  国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員 (20403123)

Project Period (FY) 2016-04-01 – 2019-03-31
Project Status Completed (Fiscal Year 2018)
Budget Amount *help
¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2018: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2017: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2016: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Keywordsグラファイト / 化学気相成長 / 黒鉛層間化合物 / 平面型電子放出デバイス
Outline of Final Research Achievements

The synthesis of graphite on an insulating substrate were investigated for electronics application. The formation of graphite intercalation compound by the intercalation of alkali metal into graphite were also investigated. As a result, highly crystalline graphite was found to be synthesized on an insulating substrate at a low temperature of 600 ° C. by using radio frequency plasma assisted chemical vapor deposition. The relatively high growth rate of 66 nm/h was achieved. For the device applications of graphite on an insulating substrate, a planar-type electron emission device using a graphite electrode were investigated. Their electron emission density and electron emission efficiency were found to be 10000 times higher than those of conventional planar-type electron emission device using a metal electrode.

Academic Significance and Societal Importance of the Research Achievements

これまで学術的な物性研究の興味の範疇に留まっていたグラファイト層間化合物のデバイス応用に向けた、絶縁基板上へのグラファイト成膜技術を確立することが出来た。600度以下の低温で成膜可能であることから、石英やシリコン基板など高耐熱基板だけでなく、安価なガラスなどにも成膜可能であり、デバイス応用の観点からも有意であると言える。また、絶縁基板上に成膜下グラファイトを電極を用いた電子放出デバイスを開発し、性能を飛躍的に向上できることを示し、グラファイト電極のデバイス応用への有効性を実証した。

Report

(4 results)
  • 2018 Annual Research Report   Final Research Report ( PDF )
  • 2017 Research-status Report
  • 2016 Research-status Report
  • Research Products

    (32 results)

All 2019 2018 2017 2016

All Journal Article (8 results) (of which Peer Reviewed: 1 results,  Acknowledgement Compliant: 1 results) Presentation (23 results) (of which Int'l Joint Research: 6 results,  Invited: 4 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] Graphene-oxide-semiconductor planar-type electron emission device and its applications2018

    • Author(s)
      Murakami Katsuhisa、Miyaji Joji、Furuya Ryo、Adachi Manabu、Nagao Masayoshi、Yoshihiro Nemoto、Takeguchi Masaki、Neo Yoichiro、Takao Yoshinori、Yamada Yoichi、Sasaki Masahiro、Mimura Hidenori
    • Journal Title

      Technical digest 31st International Vacuum Nanoelectronics Conference

      Volume: 31 Pages: 36-37

    • DOI

      10.1109/ivnc.2018.8520076

    • Related Report
      2018 Annual Research Report
  • [Journal Article] Improvement of Electron Emission Efficiency of Graphene-Oxide-Semiconductor Planar-Type Electron Sources for Nanosatellite Neutralizers2018

    • Author(s)
      Furuya Ryo、Murakami Katsuhisa、Nagao Masayoshi、Takao Yoshinori
    • Journal Title

      Technical digest 31st International Vacuum Nanoelectronics Conference

      Volume: 31 Pages: 188-189

    • DOI

      10.1109/ivnc.2018.8519982

    • Related Report
      2018 Annual Research Report
  • [Journal Article] Evaluation of electron emission properties of graphene-oxide-silicon planar type cold cathode for an electron microscope2018

    • Author(s)
      Miyaji Joji、Murakami Katsuhisa、Nagao Masayoshi、Neo Yoichiro、Mimura Hidenori
    • Journal Title

      Technical digest 31st International Vacuum Nanoelectronics Conference

      Volume: 31 Pages: 204-205

    • DOI

      10.1109/ivnc.2018.8520285

    • Related Report
      2018 Annual Research Report
  • [Journal Article] Electron emission properties of graphene-oxide-semiconductor planar-type electron emission devices2018

    • Author(s)
      Murakami Katsuhisa、Tanaka Shunsuke、Iijima Takuya、Nagao Masayoshi、Nemoto Yoshihiro、Takeguchi Masaki、Yamada Yoichi、Sasaki Masahiro
    • Journal Title

      Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

      Volume: 36 Issue: 2

    • DOI

      10.1116/1.5006866

    • NAID

      120007133905

    • Related Report
      2017 Research-status Report
    • Peer Reviewed
  • [Journal Article] Annealing effect on electron emission properties of graphene-oxide-semiconductor planar-type electron emission devices2017

    • Author(s)
      Murakami Katsuhisa、Nagao Masayoshi、Iijima Takuya、Yamada Yoichi、Sasaki Masahiro、Nemoto Yoshihiro、Takeguchi Masaki
    • Journal Title

      Technical digest 30th International Vacuum Nanoelectronics Conference

      Volume: - Pages: 114-115

    • DOI

      10.1109/ivnc.2017.8051568

    • Related Report
      2017 Research-status Report
  • [Journal Article] グラフェンを用いた低真空・低電圧で動作可能な高効率平面型電子放出デバイス2017

    • Author(s)
      村上勝久、古家遼、飯島拓也、長尾 昌善、根本 善弘、竹口 雅樹、鷹尾祥典、山田洋一、佐々木正洋
    • Journal Title

      信学技報

      Volume: 117 Pages: 1-4

    • Related Report
      2017 Research-status Report
  • [Journal Article] グラフェンをゲート電極に用いた平面型電子放出素子2016

    • Author(s)
      村上勝久、田中駿丞、長尾昌善、根本善弘 、竹口雅樹、藤田淳一
    • Journal Title

      電子情報通信学会技術研究報告

      Volume: 166 Pages: 37-40

    • Related Report
      2016 Research-status Report
    • Acknowledgement Compliant
  • [Journal Article] Electron emission properties of graphene-oxide-semiconductor planar-type electron emission devices2016

    • Author(s)
      Katsuhisa Murakami, Shunsuke Tanaka, Takuya Iijima, Masayoshi Nagao, Yoshihiro Nemoto, Masaki Takeguchi, Jun-ichi Fujita
    • Journal Title

      Technical digest 29th International Vacuum Nanoelectronics Conference

      Volume: - Pages: 61-62

    • DOI

      10.1109/ivnc.2016.7551466

    • NAID

      120007133905

    • Related Report
      2016 Research-status Report
  • [Presentation] 小型イオンエンジン用平面型グラフェン電子源の電子電流特性評価2019

    • Author(s)
      古家 遼、村上 勝久、長尾 昌善、鷹尾 祥典
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] 宇宙利用を目指した平面型グラフェン電子源の放出電子電流向上2019

    • Author(s)
      古家 遼、村上 勝久、長尾 昌善、鷹尾 祥典
    • Organizer
      宇宙輸送シンポジウム
    • Related Report
      2018 Annual Research Report
  • [Presentation] Graphene-oxide-semiconductor planar-type electron emission device and its applications2018

    • Author(s)
      K. Murakami
    • Organizer
      31st International Vacuum Nanoelectronics Conference
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 絶縁基板上へのグラフェンの直接合成技術と新規電子デバイスへの応用2018

    • Author(s)
      村上 勝久、長尾 昌善
    • Organizer
      産業技術連携推進会議 情報通信・エレクトロニクス部会 第14回電子技術分科会
    • Related Report
      2018 Annual Research Report
  • [Presentation] 平面型グラフェン電子源の放出効率向上と 大電流化に向けた取り組み2018

    • Author(s)
      古家 遼、村上 勝久、長尾 昌善、鷹尾 祥典
    • Organizer
      第62回宇宙科学技術連合講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] 高放出効率を目指した平面型グラフェン電子源の試作2018

    • Author(s)
      古家遼、村上勝久、長尾昌善、鷹尾祥典
    • Organizer
      平成29年度宇宙輸送シンポジウム
    • Related Report
      2017 Research-status Report
  • [Presentation] 超小型イオンエンジン用高効率平面型グラフェン電子源の開発2018

    • Author(s)
      古家遼、村上勝久、長尾昌善、鷹尾祥典
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] SEM搭載電子源としてのGOS型電界電子放出陰極2018

    • Author(s)
      宮路丈司、村上勝久、長尾昌善、根尾陽一郎、三村秀典
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] 絶縁基板上へのグラフェン直接合成とグラフェン/酸化膜/Si積層構造からの高効率電子放出2018

    • Author(s)
      村上勝久、宮路丈司、古家遼、飯島拓也、長尾昌善、根本善弘、竹口正樹、鷹尾祥典、山田洋一、佐々木正洋、根尾陽一郎、三村秀典
    • Organizer
      第15回真空ナノエレクトロニクスシンポジウム
    • Related Report
      2017 Research-status Report
    • Invited
  • [Presentation] 低真空・低電圧で動作するグラフェンを用いた高効率平面型電子源2018

    • Author(s)
      村上勝久、宮路丈司、古家遼、安達学、飯島拓也、長尾昌善、根本善弘、竹口正樹、鷹尾祥典、山田洋一、佐々木正洋、根尾陽一郎、三村秀典
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Research-status Report
    • Invited
  • [Presentation] GOS(Graphene-Oxide-Semiconductor)型電子源の電子放出特性2017

    • Author(s)
      飯島拓也、田中駿丞、長尾昌善、根本善弘、竹口雅樹、山田洋一、佐々木正洋、藤田淳一、村上勝久
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県横浜市)
    • Year and Date
      2017-03-14
    • Related Report
      2016 Research-status Report
  • [Presentation] Annealing effect on electron emission properties of graphene-oxide-semiconductor planar-type electron emission devices2017

    • Author(s)
      K. Murakami, T. Iijima, M. Nagao, Y. Nemoto, M. Takeguchi, Y. Yamada, M. Sasaki
    • Organizer
      30th International Vacuum Nanoelectronics Conference
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] グラフェンを用いた低真空・低電圧で動作可能な高効率平面型電子放出デバイス2017

    • Author(s)
      村上勝久、古家遼、飯島拓也、長尾 昌善、根本 善弘、竹口 雅樹、鷹尾祥典、山田洋一、佐々木正洋
    • Organizer
      電子情報通信学会電子デバイス研究会, 仙台
    • Related Report
      2017 Research-status Report
  • [Presentation] Graphene-oxide-semiconductor planar type electron emission device2017

    • Author(s)
      K. Murakami, M. Nagao
    • Organizer
      Korea-Japan Vacuum Nanoelectronics Symposium
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] 金属蒸気触媒CVDによるグラフェンの絶縁基板上直接合成とデバイス応用2017

    • Author(s)
      村上勝久、田中駿丞、飯島拓也、長尾昌善、根本善弘、竹口雅樹、山田洋一、佐々木正洋、藤田淳一
    • Organizer
      共用・計測合同シンポジウム201
    • Place of Presentation
      NIMS千現地区(茨城県つくば市)
    • Related Report
      2016 Research-status Report
  • [Presentation] グラフェンを用いた低真空・低電圧で動作可能な高効率平面型電子放出素子2017

    • Author(s)
      村上勝久、田中駿丞、飯島拓也、長尾昌善、根本善弘、竹口雅樹、山田洋一、佐々木正洋、藤田淳一
    • Organizer
      第14回真空ナノエレクト ロニクスシンポジウム
    • Place of Presentation
      アクトシティ浜松(静岡県浜松市)
    • Related Report
      2016 Research-status Report
  • [Presentation] Electron emission properties of graphene-oxide-semiconductor planar-type electron emission device2016

    • Author(s)
      村上勝久、田中駿丞、飯島拓也、長尾昌善、根本善弘, 竹口雅樹、藤田淳一
    • Organizer
      29th International Vacuum Nanoelectronics Conference
    • Place of Presentation
      The University of British Columbia (Vancouver, Canada)
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Presentation] Planar type electron emission devices using graphene gate electrode2016

    • Author(s)
      村上 勝久
    • Organizer
      The 8th Japan-Korea Vacuum Nanoelectronics Symposium
    • Place of Presentation
      Sizuoka University (Hamamatsu, Shizuoka)
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Presentation] Fabrication and characterization of planar-type electron emission devices based on graphene-oxide-semic onductor structure2016

    • Author(s)
      村上勝久、田中駿丞、長尾昌善、根本善弘、竹口雅樹、藤田淳一
    • Organizer
      11th International Vacuum Electron Sources Conference
    • Place of Presentation
      Koreana Hotel (Seoul, Korea)
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Presentation] GOS(Graphene-Oxide-Semiconductor)型電子放出素子の電子放出特性2016

    • Author(s)
      村上勝久、田中駿丞、長尾昌善、根本善弘、竹口雅樹、藤田淳一
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ (新潟県新潟市)
    • Related Report
      2016 Research-status Report
  • [Presentation] グラフェンをゲート電極に用いた平面型電子放出素子2016

    • Author(s)
      村上勝久、田中駿丞、長尾昌善、根本善弘 、竹口雅樹、藤田淳一
    • Organizer
      電子デバイス研究会「電子管と真空ナノエレクトロニクス及びその評価技術」
    • Place of Presentation
      三重大学(三重県津市)
    • Related Report
      2016 Research-status Report
  • [Presentation] 大面積グラフェン合成手法の確立とグラフェンナノエレクトロニクスへの展開2016

    • Author(s)
      村上勝久
    • Organizer
      第1回NRP育成対象者成果発表会
    • Place of Presentation
      日経ビル6階大手町セミナールーム2 (東京都千代田区)
    • Related Report
      2016 Research-status Report
  • [Presentation] GOS(Graphene-Oxide-Semiconductor)型電子放出素子の電子放出特性2016

    • Author(s)
      村上勝久
    • Organizer
      電子線応用技術研究会
    • Place of Presentation
      日立ハイテクノロジーズ本社(東京都千代田区)
    • Related Report
      2016 Research-status Report
    • Invited
  • [Patent(Industrial Property Rights)] グラフェンの成膜方法及びその装置2017

    • Inventor(s)
      村上勝久、長尾昌善
    • Industrial Property Rights Holder
      村上勝久、長尾昌善
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2017-197923
    • Filing Date
      2017
    • Related Report
      2017 Research-status Report

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Published: 2016-04-21   Modified: 2020-03-30  

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