| Project/Area Number |
16K14247
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
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| Project Period (FY) |
2016-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2017: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2016: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | 2次元層状半導体膜 / 遷移金属ダイカルコゲナイド / 二硫化モリブデン / 3次元成長 / 2次元成長 / 核形成 / スパッタ法 / 2D FET / 3D構造 / MISFET / MoS2 |
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| Outline of Final Research Achievements |
Regarding a two-dimensional channel field effect transistor (2D-MISFET) using a transition metal dichalcogenide (TMDC) as an atomic layered semiconductor, the molybdenum disulfide (MoS2) film formed by the ultra-high vacuum RF magnetron sputtering method has been investigated. Three dimensional fin shape was observed in cross sectional TEM, but lacked controllability. On the other hand, the MoS2 fin shape was confirmed due to the surface roughness of the underlying substrate as a trigger. It was confirmed by Raman spectroscopy that its internal stress was small and its crystallinity was high. As described above, we found that grain boundary control of TMDC film is more effective than nucleation from patterned structure to realize three-dimensional MoS2 film.
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