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Direct growth of graphene on h-BN using the Cu vapor

Research Project

Project/Area Number 16K14446
Research Category

Grant-in-Aid for Challenging Exploratory Research

Allocation TypeMulti-year Fund
Research Field Metal making/Resorce production engineering
Research InstitutionThe University of Tokyo

Principal Investigator

Nagashio Kosuke  東京大学, 大学院工学系研究科(工学部), 准教授 (20373441)

Project Period (FY) 2016-04-01 – 2018-03-31
Project Status Completed (Fiscal Year 2017)
Budget Amount *help
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2017: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2016: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Keywordsグラフェン / 2次元材料 / ファンでアワールスヘテロ / CVD / 直接成長 / h-BN / ヘテロ構造 / CVD成長
Outline of Final Research Achievements

To open the band gap in bilayer graphene, it is important to use atomically flat substrate and to reduce the charged impurities on oxide. The key to achieve these issues is the van der Waals heterostructure formation with h-BN. However, the direct growth of graphene on h-BN is quite difficult because the catalytic reaction is not expected on the h-BN surface. In this study, we studied the graphene growth on h-BN using the catalytic reaction with Cu vapor. We tried many kinds of catalytic metals. It was quite difficult to grow graphene on h-BN. Therefore, we started to grow MoS2 with intrinsic band gap, which is one of 2D materials. We successfully grew monolayer MoS2 on SiO2/Si substrate. Moreover, we tried to fabricate the van der Waals heterostructure with h-BN. The PDMS/PMMA of small lens shape is used to pick up small 2D crystal and fabricate the heterostructure. By controlling the temperature, it was succeeded.

Report

(3 results)
  • 2017 Annual Research Report   Final Research Report ( PDF )
  • 2016 Research-status Report
  • Research Products

    (31 results)

All 2017 2016 Other

All Journal Article (9 results) (of which Int'l Joint Research: 4 results,  Peer Reviewed: 8 results,  Acknowledgement Compliant: 4 results) Presentation (16 results) (of which Int'l Joint Research: 11 results,  Invited: 16 results) Book (4 results) Remarks (2 results)

  • [Journal Article] Transport properties of the top and bottom surfaces in monolayer MoS2 grown by chemical vapor deposition2017

    • Author(s)
      S. Kurabayashi, and K. Nagashio
    • Journal Title

      Nanoscale

      Volume: 9 Issue: 35 Pages: 13264-13264

    • DOI

      10.1039/c7nr05385a

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Electrical Integrity and Anisotropy in Dielectric Breakdown of Layered h-BN Insulator2017

    • Author(s)
      K. Nagashio, Y. Hattori, N. Takahashi, T. Taniguchi, K. Watanabe, J. Bao
    • Journal Title

      ECS Transactions

      Volume: 79 Pages: 91-97

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Molecularly-thin Anatase field-effect transistors fabricated through the solid state transformation of titania nanosheets2017

    • Author(s)
      S. Sekizaki, M. Osada, K. Nagashio
    • Journal Title

      Nanoscale, 9, 6471

      Volume: 9 Issue: 19 Pages: 6471-6471

    • DOI

      10.1039/c7nr01305a

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Crystalline Graphdiyne Nanosheets Produced at a Gas/Liquid or Liquid/Liquid Interface2017

    • Author(s)
      Ryota Matsuoka, *Ryota Sakamoto, Ken Hoshiko, Sono Sasaki, Hiroyasu Masunaga, Kosuke Nagashio, *Hiroshi Nishihara
    • Journal Title

      J. Am. Chem. Soc.

      Volume: 139 Issue: 8 Pages: 3145-3152

    • DOI

      10.1021/jacs.6b12776

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] "Experimental detection of active defects in few layers MoS2 through random telegraphic signals analysis observed in its FET characteristics"2017

    • Author(s)
      N. Fang, K. Nagashio, and A. Toriumi
    • Journal Title

      2D Materials

      Volume: 4 Issue: 1 Pages: 015035-015035

    • DOI

      10.1088/2053-1583/aa50c4

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Graphene field-effect transistor application -Electric band structure of graphene in transistor structure extracted from quantum capacitance-",2017

    • Author(s)
      K. Nagashio
    • Journal Title

      J. Mater. Res.

      Volume: 32 Pages: 64-64

    • Related Report
      2017 Annual Research Report
  • [Journal Article] Anisotropic breakdown strength of single crystal hexagonal Boron Nitride2016

    • Author(s)
      Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio
    • Journal Title

      ACS appl. mater. interfaces

      Volume: 8 Issue: 41 Pages: 27877-27877

    • DOI

      10.1021/acsami.6b06425

    • Related Report
      2016 Research-status Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Buffer Layer Engineering on Graphene via Various Oxidation Methods for Atomic Layer Deposition2016

    • Author(s)
      N. Takahashi and K. Nagashio
    • Journal Title

      Appl. Phys. Express

      Volume: 9 Issue: 12 Pages: 125101-125101

    • DOI

      10.7567/apex.9.125101

    • NAID

      210000138125

    • Related Report
      2016 Research-status Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Comparison of device structures for the dielectric breakdown measurement of hexagonal boron nitride2016

    • Author(s)
      Y. Hattori, T. Taniguchi, K. Watanabe and K. Nagashio
    • Journal Title

      Appl. Phys. Lett.

      Volume: 109 Issue: 25 Pages: 253111-253111

    • DOI

      10.1063/1.4972555

    • Related Report
      2016 Research-status Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Presentation] [Invited] "Interface engineering for 2D electonics"2017

    • Author(s)
      K. Nagashio
    • Organizer
      2017 NEA Symposium of Emerging Materials Innovation, (October, 18, 2017, Lotte hotel, Soul, Korea).
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] [Invited] "Interface engineering for 2D layered semiconductors"2017

    • Author(s)
      K. Nagashio,
    • Organizer
      2017 PKU-UTokyo nano-carbon summer camp, (July, 27, 2017, Hongo, UTokyo (Tokyo))
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] [Invited] "Gap engineering and reliability study for 2Delectronics"2017

    • Author(s)
      K. Nagashio
    • Organizer
      6th Int. Conf. on Semiconductor Technology for ULSI & TFT,(May. 23, 2017, Schloss Hernstein, Hernstein, Austria).
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] [Invited]"Interface engineering for 2D electonics".2017

    • Author(s)
      K. Nagashio,
    • Organizer
      Nippon-Taiwan Workshop, (Feb. 18, 2017, Kwansei Gakuin Univ. Sanda, Hyogo)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] [招待講演]2次元原子層半導体における層状ヘテロ界面の理解と制御,2017

    • Author(s)
      長汐晃輔
    • Organizer
      第36回電子材料シンポジウム, (2017年11月9日,長浜ロイヤルホテル,(滋賀県長浜市)).
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] [12][招待講演] "2次元層状チャネルFETの電子輸送特性及び界面特性"2017

    • Author(s)
      長汐晃輔
    • Organizer
      応用電子物性分科会研究例会, (2017年10月19日,東工大,(東京都目黒区)).
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] "2次元原子膜応用のためのゲートスタック形成"2017

    • Author(s)
      長汐晃輔
    • Organizer
      [招待講演] 2017真空・表面科学合同講演会, (2017年8月17日,横浜市立大,(横浜市)).
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] [招待講演] "グラフェンの伝導特性"2017

    • Author(s)
      長汐晃輔
    • Organizer
      日本化学会第97春季年会「特別企画」二次元物質の科学, (2017年3月16日, 慶応大学, 日吉, ( 神奈川)).
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] Interface engineering for 2D electonics2017

    • Author(s)
      K. Nagashio
    • Organizer
      Nippon-Taiwan Workshop
    • Place of Presentation
      Kwansei Gakuin Univ. Sanda, Hyogo
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] グラフェンの伝導特性2017

    • Author(s)
      長汐晃輔
    • Organizer
      日本化学会第97春季年会「特別企画」二次元物質の科学
    • Place of Presentation
      慶応大学, 日吉, 神奈川
    • Related Report
      2016 Research-status Report
    • Invited
  • [Presentation] prograGraphene transistor applicationm2016

    • Author(s)
      K. Nagashio
    • Organizer
      Core to core
    • Place of Presentation
      Tohoku university, Sendai
    • Year and Date
      2016-11-16
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] Reliability study on layered 2D insulator2016

    • Author(s)
      K. Nagashio
    • Organizer
      230th Electrochemical Society Meeting
    • Place of Presentation
      Honolulu, Hawaii
    • Year and Date
      2016-10-02
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] Gap state analysis and reliability study on 2D electronics2016

    • Author(s)
      K. Nagashio
    • Organizer
      Core to core program
    • Place of Presentation
      Cambridge university, UK
    • Year and Date
      2016-07-18
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] Gap engineering & reliability study for 2D electronics2016

    • Author(s)
      K. Nagashio
    • Organizer
      Graphene week
    • Place of Presentation
      Warsaw, Poland
    • Year and Date
      2016-06-13
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] Dielectric breakdown of hexagonal Boron Nitride2016

    • Author(s)
      K. Nagashio
    • Organizer
      International conference on graphene and related materials: properties and applications
    • Place of Presentation
      Paestum, Italy
    • Year and Date
      2016-05-23
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] Dielectric breakdown of hexiagonal boronitride2016

    • Author(s)
      K. Nagashio
    • Organizer
      UTokyo-NTU joint conference at NUT 2016
    • Place of Presentation
      NTU, Taiwan
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research / Invited
  • [Book] "グラフェンの伝導特性とエネルギーギャップ形成", 二次元物質の科学, CSJカレントレビュー, 第26号,2017

    • Author(s)
      長汐晃輔
    • Publisher
      日本化学会編 化学同人
    • Related Report
      2017 Annual Research Report
  • [Book] "2次元層状チャネルFETの電子輸送特性"2017

    • Author(s)
      長汐晃輔
    • Publisher
      応用電子物性分科会誌
    • Related Report
      2017 Annual Research Report
  • [Book] "電界効果トランジスタにおけるゲートスタック形成と評価", カーボンナノチューブ・グラフェンの応用研究最前線2016

    • Author(s)
      長汐晃輔,
    • Publisher
      エヌ・ティー・エス
    • Related Report
      2016 Research-status Report
  • [Book] 2D materials for nanoelectronics2016

    • Author(s)
      A. Toriumi, K. Nagashio
    • Publisher
      CRC Press
    • Related Report
      2016 Research-status Report
  • [Remarks] 東京大学マテリアル工学専攻・長汐研究室

    • URL

      http://webpark1753.sakura.ne.jp/nagashio_lab/

    • Related Report
      2017 Annual Research Report
  • [Remarks] 東京大学 マテリアル工学専攻 長汐研究室

    • URL

      http://webpark1753.sakura.ne.jp/nagashio_lab/

    • Related Report
      2016 Research-status Report

URL: 

Published: 2016-04-21   Modified: 2019-03-29  

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