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Group-IV lattice-matched heterostructure and its application to high-frequency devices

Research Project

Project/Area Number 16K18076
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeMulti-year Fund
Research Field Electronic materials/Electric materials
Research InstitutionThe University of Electro-Communications (2017-2018)
Tokyo University of Agriculture and Technology (2016)

Principal Investigator

TSUKAMOTO TAKAHIRO  電気通信大学, 大学院情報理工学研究科, 助教 (50640942)

Project Period (FY) 2016-04-01 – 2019-03-31
Project Status Completed (Fiscal Year 2018)
Budget Amount *help
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2017: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2016: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
KeywordsGeSiSn / 共鳴トンネルダイオード / RTD / スパッタエピタキシー法 / スパッタエピタキシー / Ⅳ族半導体 / 電子デバイス・機器 / 結晶成長 / 電子・電気材料 / 量子井戸
Outline of Final Research Achievements

In this study, we aimed to develop a growth technique of GeSiSn layers and fabricate quantum well devices composed of GeSiSn. At first, we formed GeSiSn layers lattice-matched with Ge, and successfully obtained lattice-matched GeSiSn/Ge quantum well structure with a good interface. Then, we fabricated a resonant tunneling diode (RTD) using Ge as a quantum well and GeSiSn layer as a barrier layer, and obtained a differential negative resistance that is a feature of RTD devices. From these results, we have successfully demonstrated the operation of the group IV lattice-matched quantum well devices, and it is expected to develop a new group IV heterojunction device.

Academic Significance and Societal Importance of the Research Achievements

本研究成果では、大面積成膜可能な物理体積法であるスパッタエピタキシー法を用いたGeSiSn薄膜結晶成長の物理を明らかにし、Ⅳ族半導体における格子定数整合系ヘテロエピ結晶成長技術を確立し、量子効果デバイス作製に向けた結晶成長の技術的指針を提案した。本研究で開発したRTD素子はミリ波・テラヘルツ波帯の発振デバイスの有力な候補であり、従来のSi CMOS回路への搭載やSiプロセス技術の転用による低コスト化といった理由から安価で汎用的な高周波デバイスが新規開発され、高速無線通信や車載レーダ、ミリ波・テラヘルツ波を用いたセンサデバイスの実用化の促進やさらなる市場の拡大が期待される。

Report

(4 results)
  • 2018 Annual Research Report   Final Research Report ( PDF )
  • 2017 Research-status Report
  • 2016 Research-status Report
  • Research Products

    (5 results)

All 2018 2017

All Presentation (5 results) (of which Int'l Joint Research: 1 results,  Invited: 1 results)

  • [Presentation] 格子定数整合GeSiSn/Ge系p-RTDの試作2018

    • Author(s)
      栗原祥太,脇谷実,塚本貴広,須田良幸
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] 金属/GeO2/n-Ge電極構造におけるTi薄膜の効果2018

    • Author(s)
      栗原祥太,塚本貴広,須田良幸
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Research-status Report
  • [Presentation] Epitaxial growth of GeSn and GeSiSn by sputter epitaxy method2017

    • Author(s)
      Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
    • Organizer
      2017 EMN/CC Barcelona Meeting Energy Materials Nanotechnology
    • Related Report
      2017 Research-status Report
    • Invited
  • [Presentation] Formation of lattice-matched GeSiSn/Ge quantum well structure by sputter epitaxy method2017

    • Author(s)
      Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
    • Organizer
      2017 Materials Research Society Fall Meeting
    • Related Report
      2017 Research-status Report
    • Int'l Joint Research
  • [Presentation] 格子定数整合系GeSiSn/Ge n-RTDの作製2017

    • Author(s)
      羽田一暁, 塚本貴広, 広瀬信光,笠松章史,松井敏明, 須田良幸
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Related Report
      2016 Research-status Report

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Published: 2016-04-21   Modified: 2020-03-30  

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