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Research and development of ultralow power circuit built by steep subthreshold slope FET and embedded FeRAM based on ferroelectric HfO2 thin film

Research Project

Project/Area Number 16K18085
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeMulti-year Fund
Research Field Electron device/Electronic equipment
Research InstitutionThe University of Tokyo

Principal Investigator

Kobayashi Masaharu  東京大学, 生産技術研究所, 准教授 (40740147)

Co-Investigator(Renkei-kenkyūsha) HIRAMOTO Toshiro  東京大学, 生産技術研究所, 教授 (20192718)
Project Period (FY) 2016-04-01 – 2018-03-31
Project Status Completed (Fiscal Year 2017)
Budget Amount *help
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2017: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2016: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Keywords低消費電力 / 負性容量トランジスタ / 不揮発性メモリ / 強誘電体 / 酸化ハフニウム / 負性容量 / IoT / 強誘電性 / HfO2 / トランジスタ
Outline of Final Research Achievements

We have studied and developed transistor and memory technology for ultralow power integrated circuit system in IoT sensor node module. For transistor, we have clarified device design guideline of negative capacitance FET (NCFET) which can operate at below supply voltage 0.2V. We have fabricated and demonstrated NCFET with steep subthreshold slope, and proposed new physical mechanism on device operation principle. For memory, we have successfully designed, fabricated and demonstrated non-volatile SRAM cell which can significantly suppress standby leakage. Both for transistor and memory, we have introduced ferroelectric HfO2 thin film which enables very low cost process integration for manufacturing. The above-mentioned results are important achievements demonstrating possibility and usefulness and will open new paths for very low-cost ultralow power device technology

Report

(3 results)
  • 2017 Annual Research Report   Final Research Report ( PDF )
  • 2016 Research-status Report
  • Research Products

    (26 results)

All 2018 2017 2016

All Journal Article (5 results) (of which Peer Reviewed: 5 results,  Open Access: 3 results) Presentation (21 results) (of which Int'l Joint Research: 9 results,  Invited: 8 results)

  • [Journal Article] Experimental Demonstration of a Nonvolatile SRAM with Ferroelectric HfO2 Capacitor for Normally Off Application2018

    • Author(s)
      Masaharu Kobayashi, Nozomu Ueyama, Kyungmin Jang, and Toshiro Hiramoto
    • Journal Title

      Journal of the Electron Devices Society

      Volume: 6 Pages: 280-285

    • DOI

      10.1109/jeds.2018.2800090

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Experimental Observation and Simulation Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO2 Capacitor2018

    • Author(s)
      Kyungmin Jang, Nozomu Ueyama, Masaharu Kobayashi, and Toshiro Hiramoto
    • Journal Title

      Journal of the Electron Devices Society

      Volume: 6 Pages: 346-353

    • DOI

      10.1109/jeds.2018.2806920

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] I on /I off ratio enhancement and scalability of gate-all-around nanowire negative-capacitance FET with ferroelectric HfO22017

    • Author(s)
      Jang Kyungmin, Saraya Takuya, Kobayashi Masaharu, Hiramoto Toshiro
    • Journal Title

      Solid State Electronics

      Volume: 136 Pages: 60-67

    • DOI

      10.1016/j.sse.2017.06.011

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] On gate stack scalability of double-gate negative-capacitance FET with ferroelectric HfO2 for energy efficient sub-0.2V operation2017

    • Author(s)
      Kyungmin Jang, Takuya Sayara, Masaharu Kobayashi, and Toshiro Hiramoto
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 136 Issue: 2 Pages: 60-67

    • DOI

      10.7567/jjap.57.024201

    • NAID

      210000148597

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Negative Capacitance for Boosting Tunnel FET Performance”, IEEE Transactions on Nanotechnology2017

    • Author(s)
      Masaharu Kobayashi, Kyungmin Jang, Nozomu Ueyama, and Toshiro Hiramoto
    • Journal Title

      IEEE Transactions on Nanotechnology

      Volume: 16 Issue: 2 Pages: 253-258

    • DOI

      10.1109/tnano.2017.2658688

    • Related Report
      2016 Research-status Report
    • Peer Reviewed / Open Access
  • [Presentation] Negative Capacitance Transistor for Steep Subthreshold Slope2018

    • Author(s)
      Masaharu Kobayashi
    • Organizer
      Electron Devices Technology and Manufacturing (EDTM) Conference 2018
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 超低消費電力エレクトロニクスに向けた強誘電体HfO2系薄膜材料による デバイス技術のブレークスルー2018

    • Author(s)
      小林正治
    • Organizer
      電子デバイス界面テクノロジー研究会
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] Technology break-through by ferroelectric HfO2 for ultralow power electronics2017

    • Author(s)
      Masaharu Kobayashi
    • Organizer
      International Nanotechnology Conference on Communication and Cooperation Workshop (INC workshop)
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] Investigations on dynamic characteristics of ferroelectric HfO2 based on multi-domain interaction model2017

    • Author(s)
      Kyungmin Jang, Nozomu Ueyama, Masaharu Kobayashi, and Toshiro Hiramoto
    • Organizer
      Silicon Nano Workshop (SNW) 2017
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] A nonvolatile SRAM integrated with ferroelectric HfO2 capacitor for normally-off and ultralow power IoT application2017

    • Author(s)
      Masaharu Kobayashi, Nozomu Ueyama, and Toshiro Hiramoto
    • Organizer
      VLSI symposium 2017
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] A nonvolatile SRAM integrated with ferroelectric HfO2 capacitor for normally-off and ultralow power IoT application2017

    • Author(s)
      Masaharu Kobayashi
    • Organizer
      The Fifth Berkeley Symposium on Energy Efficient Electronic Systems & Steep Transistors Workshop
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] ノーマリーオフ動作のための強誘電体HfO2を集積した不揮発性SRAM2017

    • Author(s)
      小林正治,上山望,平本俊郎
    • Organizer
      シリコン材料・デバイス研究会(SDM)
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] 強誘電性マルチドメイン相互作用モデルを用いた強誘電体HfO2の動特性に関する考察2017

    • Author(s)
      Jang Kyungmin, 上山望,小林正治,平本俊郎
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] 低消費電力応用に向けた強誘電体HfO2薄膜不揮発性SRAMの動作実証2017

    • Author(s)
      小林正治,上山望,平本俊郎
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Present status and future prospects of Si-based CMOS devices2017

    • Author(s)
      小林正治
    • Organizer
      第1回 CSRN-Tokyo Workshop 2017
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] CMOSプロセスと整合性の高い強誘電ナノ薄膜材料による不揮発性メモリの新展開2017

    • Author(s)
      小林正治
    • Organizer
      NEDIA 第4回 電子デバイスフォーラム京都(2017)
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] 負性容量トランジスタに向けた強誘電性HfZrO2膜における負性容量の直接観測2017

    • Author(s)
      上山 望,小林正治,平本俊郎
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜, 神奈川
    • Related Report
      2016 Research-status Report
  • [Presentation] 強誘電体HfO2ダブルゲート負性容量FETの動特性に関する考察2017

    • Author(s)
      Jang Kyungmin、上山 望、小林正治、平本俊郎
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜, 神奈川
    • Related Report
      2016 Research-status Report
  • [Presentation] 強誘電体HfO2を用いたGate-All-Aroundナノワイヤ負性容量FETにおけるIon/Ioff比の向上とそのスケーラビリティ2017

    • Author(s)
      Jang Kyungmin,更屋拓哉,小林正治,平本俊郎
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜, 神奈川
    • Related Report
      2016 Research-status Report
  • [Presentation] Ultra-Low Power and Ultra-Low Voltage Devices and Circuits for IoT Applications2016

    • Author(s)
      Toshiro Hiramoto, Kiyoshi Takeuchi, and Masaharu Kobayashi
    • Organizer
      IEEE Silicon Nanoelectronics Workshop
    • Place of Presentation
      Hilton Hawaiian Village, Honolulu, HI, USA
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research / Invited
  • [Presentation] Negative Capacitance as a Performance Booster for Tunnel FET2016

    • Author(s)
      Masaharu Kobayashi, Kyungmin Jang, Nozomu Ueyama, and Toshiro Hiramoto
    • Organizer
      IEEE Silicon Nanoelectronics Workshop
    • Place of Presentation
      Hilton Hawaiian Village, Honolulu, HI, USA
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Presentation] On Gate Stack Scalability of Double-Gate Negative-Capacitance FET with Ferroelectric HfO2 for Energy-Efficient Sub-0.2V Operation2016

    • Author(s)
      Kyungmin Jang, Takuya Saraya, Masaharu Kobayashi, and Toshiro Hiramoto
    • Organizer
      IEEE Silicon Nanoelectronics Workshop
    • Place of Presentation
      Hilton Hawaiian Village, Honolulu, HI, USA
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Presentation] Experimental Study on Polarization-Limited Operation Speed of Negative Capacitance FET with Ferroelectric HfO22016

    • Author(s)
      Masaharu Kobayashi, Nozomu Ueyama, Kyungmin Jang, and Toshiro Hiramoto
    • Organizer
      IEEE International Electron Devices Meeting (IEDM)
    • Place of Presentation
      Hilton San Francisco Union Square, San Francisco, CA, USA
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Presentation] Ion/Ioff Ratio Enhancement of Gate-All-Around Nanowire Negative-Capacitance FET with Ferroelectric HfO22016

    • Author(s)
      Kyungmin Jang, Takuya Saraya, Masaharu Kobayashi, and Toshiro Hiramoto
    • Organizer
      International Semiconductor Device Research Symposium (ISDRS)
    • Place of Presentation
      Hyatt Regency Bethesda, Bethesda, MD, USA
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Presentation] 負性容量によるトンネルFETの性能向上負性容量によるトンネルFETの性能向上2016

    • Author(s)
      小林正治,チャン キュンミン,上山 望,平本俊郎
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ, 新潟
    • Related Report
      2016 Research-status Report
  • [Presentation] サブ0.2Vの高エネルギー効率動作に向けた強誘電体HfO2ダブルゲート負性容量FETにおけるゲートスタックのスケーラビリティ2016

    • Author(s)
      Jang Kyungmin,更屋拓哉,小林正治,平本 俊郎
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ, 新潟
    • Related Report
      2016 Research-status Report

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Published: 2016-04-21   Modified: 2019-03-29  

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