Oxide semiconductor steep slope flexible device using ionic liquid

• Project/Area Number: 16K18093
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Electron device/Electronic equipment
• Research Institution: Nara Institute of Science and Technology
• Principal Investigator: FUJII Mami 奈良先端科学技術大学院大学, 先端科学技術研究科, 助教 (30731913)
• Research Collaborator: ONO Shimpei ; FUJITA Naoyuki ; YAMADA Hirohisa
• Project Period (FY): 2016-04-01 – 2019-03-31
• Project Status: Completed (Fiscal Year 2018)
• Budget Amount: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000); Fiscal Year 2017: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000); Fiscal Year 2016: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
• Keywords: 酸化物半導体 / 薄膜トランジスタ / 電気二重層トランジスタ / イオン液体 / 信頼性 / 多孔質膜 / 電界効果トランジスタ / スティープスロープ / 複合材料・物性 / エネルギー効率化 / 省エネルギー

Outline of Final Research Achievements

I proposed the introduction of a self-assembled monolayer on the interface in order to improve the reliability of the low driving voltage electric double layer transistor (EDLT) using IGZO and IL. From the measurement of the electrical reliability of EDLT introduced with this interface layer, it has become clear that the degradation in long-term driving is suppressed.
The degradation phenomenon suppressed by this FDTS is considered to be due to the decrease of In and increase of the relative amount of Zn in IGZO semiconductor layer. Therefore, although the carrier density of IGZO changes with IL, this can be suppressed by the interface layer.

Academic Significance and Societal Importance of the Research Achievements

電気二重層トランジスタ（ＥＤＬＴ）における信頼性および界面の劣化現象を検討した始めての成果であり，ＥＤＬＴ信頼性における学術的な議論が可能となった．また，劣化現象の抑制手段についても提案し，実証したため，イオン液体とＩｎ系酸化物薄膜を用いた素子の実用化に資する．
Ｉｎを含む透明導電膜などの薄膜とイオン液体を接触させた場合に生じる現象であるため，これらの材料を用いた二次電池などの劣化現象の議論にも影響を与えると考えられる．

Research Products

• [Journal Article] Improvement of the stability of an electric double-layer transistor using a 1H,1H,2H,2H-perfluorodecyltriethoxysilane barrier layer (2019)
  • Author(s): Yang Liu, Mami N Fujii, Shoma Ishida, Yasuaki Ishikawa, Kazumoto Miwa, Shimpei Ono, Juan Paolo Soria Bermundo, Naoyuki Fujita and Yukiharu Uraoka
  • Journal Title: Japanese Journal of Applied Physics Rapid Communication Volume: 58 Issue: 4 Pages: 4-4
  • DOI: 10.7567/1347-4065/ab008c
  • NAID: 210000135432
  • Peer Reviewed
• [Journal Article] SrTa2O6 Induced Low Voltage Operation of InGaZnO Thin-Film Transistors (2018)
  • Author(s): Takanori Takahashi, Takeshi Hoga, Ryoko Miyanaga, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka, Kiyoshi Uchiyama
  • Journal Title: Thin Solid Films Volume: 665 Pages: 173-178
  • DOI: 10.1016/j.tsf.2018.09.020
  • Peer Reviewed
• [Journal Article] Self-heating suppressed structure of a-IGZO thin-film transistor (2018)
  • Author(s): Kahori Kise, Mami Fujii, Bermundo Juan Paolo Soria, Yasuaki Ishikawa, Yukiharu Uraoka
  • Journal Title: IEEE Electron Device Letters Volume: 39 Issue: 9 Pages: 1322-1325
  • DOI: 10.1109/led.2018.2855152
  • Peer Reviewed
• [Journal Article] Improvement of Amorphous InGaZnO Thin-Film Transistor Using High-k SrTa2O6 as Gate Insulator Deposited by Sputtering Method (2018)
  • Author(s): Takahashi Takanori、Hoga Takeshi、Miyanaga Ryoko、Oikawa Kento、Fujii Mami N.、Ishikawa Yasuaki、Uraoka Yukiharu、Uchiyama Kiyoshi
  • Journal Title: physica status solidi (a) Volume: - Issue: 5 Pages: 1700773-1700773
  • DOI: 10.1002/pssa.201700773
  • Peer Reviewed
• [Journal Article] Evaluation of stress stabilities in amorphous In-Ga-Zn-O thin-film transistors: Effect of passivation with Si-based resin (2017)
  • Author(s): Ochi Mototaka、Hino Aya、Goto Hiroshi、Hayashi Kazushi、Fujii Mami N.、Uraoka Yukiharu、Kugimiya Toshihiro
  • Journal Title: Japanese Journal of Applied Physics Volume: 57 Issue: 2S2 Pages: 02CB06-02CB06
  • DOI: 10.7567/jjap.57.02cb06
  • Peer Reviewed
• [Journal Article] "H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing" (2017)
  • Author(s): Juan Paolo S. Bermundo, Yasuaki Ishikawa, Mami N. Fujii, Hiroshi Ikenoue, and Yukiharu Uraoka
  • Journal Title: Applied Physics Letters Volume: 107 Issue: 13 Pages: 33504-33504
  • DOI: 10.1063/1.4979319
  • Peer Reviewed
• [Journal Article] Nano-crystallization in ZnO-doped In2O3 thin films via excimer laser annealing for thin-film transistors (2016)
  • Author(s): Mami N. Fujii, Yasuaki Ishikawa, Ryoichi Ishihara, Johan van der Cingel, Mohammad R. T. Mofrad, Juan Paolo Soria Bermundo, Emi Kawashima, Kazushige Tomai, Koki Yano, Yukiharu Uraoka
  • Journal Title: AIP advances Volume: 6 Issue: 6 Pages: 65216-65216
  • DOI: 10.1063/1.4954666
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Presentation] 自己組織化単分子膜形成によるInGaZnO/イオン液体界面反応における保護作用 (2019)
  • Author(s): 石田翔麻、藤井茉美、劉洋、山田祐久、石河泰明、浦岡行治、藤田直幸
  • Organizer: 第６６回応用物理学会春季学術講演会
• [Presentation] Stability improvement of electric double layer transistor by suppressing chemical reaction (2019)
  • Author(s): Yang Liu, Mami N. Fujii, Juan Paolo S. Bermundo, Yasuaki Ishikawa, Miwa Kazumoto, Shimpei Ono, Yukiharu Uraoka
  • Organizer: International Thin Film Transistor Conference
  • Int'l Joint Research
• [Presentation] 酸化物半導体薄膜トランジスタの高性能化に資する絶縁膜 (2018)
  • Author(s): 藤井茉美
  • Organizer: 第65回応用物理学会春季学術講演会
  • Invited
• [Presentation] Ta2O5ゲート絶縁膜によるInGaZnO薄膜トランジスタの低電圧駆動 (2018)
  • Author(s): 髙橋崇典, 宝賀剛, 宮永良子, 藤井茉美, 石河泰明, 浦岡行治, 内山潔
  • Organizer: 第65回応用物理学会春季学術講演会
• [Presentation] 全固体電気二重層をゲートとしたa-IGZOトランジスタの作製と動作検証 (2018)
  • Author(s): 渡邉佳孝, 浅野哲也, 藤井茉美, JuanPaoloBermundo, 石河泰明, 浦岡行治, 足立秀明
  • Organizer: 第65回応用物理学会春季学術講演会
• [Presentation] InGaZnO/イオン液体界面解析と自己組織化単分子層間膜の効果 (2018)
  • Author(s): 小森健太, 岡田広美, 藤井茉美, 三輪一元, 小野新平, JuanPaoloBermundo, 石河泰明, 浦岡行治
  • Organizer: 第65回応用物理学会春季学術講演会
• [Presentation] IGZOとイオン液体の反応性に関する界面解析 (2017)
  • Author(s): 小森健太, 岡田広美, 藤井茉美, 三輪一元, 小野新平, Juan Paolo Bermundo, 石河泰明, 浦岡行治
  • Organizer: 第14回薄膜材料デバイス研究会
• [Presentation] スパッタ法による高誘電体SrTa2O6薄膜の作製と酸化物薄膜トランジスタへの応用薄膜トランジスタへの応用スパッタ法による高誘電体SrTa2O6薄膜の作製と酸化物薄膜トランジスタへの応用 (2017)
  • Author(s): 髙橋崇典, 宝賀剛, 宮永良子, 藤井茉美, 及川賢人, 浦岡行治, 内山潔
  • Organizer: 平成29年度 日本セラミックス協会東北北海道支部 研究発表会
• [Presentation] 高誘電体SrTa2O6をゲート絶縁膜に用いた高性能酸化物薄膜トランジスタ (2017)
  • Author(s): 髙橋崇典, 宝賀剛, 宮永良子, 藤井茉美, 浦岡行治, 内山潔
  • Organizer: 第27回 日本MRS年次大会
• [Presentation] 酸化タンタル系ゲート絶縁膜が非晶質InGaZnO薄膜トランジスタに及ぼす効果 (2017)
  • Author(s): 髙橋崇典, 宝賀剛, 宮永良子, 藤井茉美, 浦岡行治, 内山潔
  • Organizer: 第27回 日本MRS年次大会
• [Presentation] Interfacial Analysis of Ionogel Gated In2Ga2Zn1O7 Thin Film Transistors (2017)
  • Author(s): Mami N. Fujii, Hiromi Okada, Kenta Komori, Kazumoto Miwa, Shimpei Ono, Juan Paolo Bermundo, Yasuaki Ishikawa, and Yukiharu Uraoka
  • Organizer: 2017 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY
  • Int'l Joint Research
• [Presentation] Analysis of High Mobility Oxide Thin-Film Transistors after a Low Temperature Annealing Process (2016)
  • Author(s): Juan Paolo Soria Bermundo, Yasuaki Ishikawa, Mami N. Fujii, Chaiyanan Kulchaisit, Hiroshi Ikenoue and Yukiharu Uraoka
  • Organizer: The 23rd International Display Workshops
  • Place of Presentation: Fukuoka, Japan
  • Year and Date: 2016-12-07
  • Int'l Joint Research
• [Presentation] Thermal analysis and device simulation of heat suppressed structure for oxide thin-film transistor (2016)
  • Author(s): Kahori Kise, Mami N. Fujii, Juan Paolo Soria Bermundo, Yasuaki Ishikawa, and Yukiharu Uraoka
  • Organizer: The 23rd International Display Workshops
  • Place of Presentation: Fukuoka, Japan
  • Year and Date: 2016-12-07
  • Int'l Joint Research
• [Presentation] KrF Excimer Laser Annealing of High Mobility a-IGZO Thin Film Transistors (2016)
  • Author(s): Juan Paolo Soria Bermundo, Yasuaki Ishikawa, Mami N. Fujii, Hiroshi Ikenoue and Yukiharu Uraoka
  • Organizer: 第13回薄膜材料デバイス研究会
  • Place of Presentation: 響都ホール、京都，日本
  • Year and Date: 2016-10-21
• [Presentation] Defect Analysis of Siloxane Gate Insulator and its Interface in a-IGZO Thin-Film Transistor Nara Institute of Science and Technology (2016)
  • Author(s): Chaiyanan Kulchaisit, Juan Paolo Bermundo, Mami N. Fujii, Yasuaki Ishikawa, and Yukiharu Uraoka
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 新潟，日本
  • Year and Date: 2016-09-13
• [Presentation] 高圧水蒸気処理による高誘電体膜SrTa2O6を用いたIGZO薄膜トランジスタの特性改善 (2016)
  • Author(s): 及川賢人, 藤井茉美, ジョアンパウロベルムンド, 内山潔, 石河泰明, 浦岡行治
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ、新潟，日本
  • Year and Date: 2016-09-13
• [Presentation] 酸化物TFTの発熱抑制構造 (2016)
  • Author(s): 木瀬香保利, 藤井茉美, ジョアンパウロベルムンド, 石河泰明, 浦岡行治
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ新潟，日本
  • Year and Date: 2016-09-13
• [Presentation] Significant Sheet Resistance Reduction of a-IGZO via Low Temperature Excimer Laser Irradiation (2016)
  • Author(s): Juan Paolo Soria Bermundo, Yasuaki Ishikawa, Mami N. Fujii, Hiroshi Ikenoue and Yukiharu Uraoka
  • Organizer: The 16th International Meeting on Information Display
  • Place of Presentation: Jeju, Jeju Island, Korea
  • Year and Date: 2016-08-23
  • Int'l Joint Research
• [Presentation] High Performance Siloxane Hybrid Polymer Gate Insulator for Amorphous InGaZnO Thin-Film Transistors (2016)
  • Author(s): Chaiyanan Kulchaisit, Yasuaki Ishikawa, Mami N. Fujii, Haruka Yamazaki, Juan Paolo Soria Bermundo, and Yukiharu Uraoka
  • Organizer: The 16th International Meeting on Information Display
  • Place of Presentation: Jeju, Jeju Island, Korea
  • Year and Date: 2016-08-23
  • Int'l Joint Research
• [Presentation] Oxide Thin Film Transistors for Flexible Devices (2016)
  • Author(s): Yukiharu Uraoka, Juan Paolo Soria Bermundo, Mami N. Fujii, Mutsunori Uenuma, Yasuaki Ishikawa,
  • Organizer: The 16th International Meeting on Information Display
  • Place of Presentation: Jeju, Jeju Island, Korea
  • Year and Date: 2016-08-23
  • Int'l Joint Research / Invited