Budget Amount *help |
¥24,700,000 (Direct Cost: ¥19,000,000、Indirect Cost: ¥5,700,000)
Fiscal Year 2019: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2018: ¥7,670,000 (Direct Cost: ¥5,900,000、Indirect Cost: ¥1,770,000)
Fiscal Year 2017: ¥14,820,000 (Direct Cost: ¥11,400,000、Indirect Cost: ¥3,420,000)
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Outline of Final Research Achievements |
In this study, gamma-ray detector fabrication techniques have been developed for realizing a high resolution single photon emission tomography (SPECT) using a thallium bromide (TlBr) semiconductor crystal. Photolithography techniques has been studied using negative, positive and liftoff type resist and electrode formation process using liftoff type resist was most promising for fine pitch electrode formation on TlBr crystals. TlBr crystals were grown inside substrates made from aluminum oxide and quartz. 3 mm diameters and 1 mm diameters for fifth single TlBr crystals were successfully grown in the substrates.
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