| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2019: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2018: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2017: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Outline of Final Research Achievements |
In this study, we have investigated the improvement of the luminescence efficiency of yellow and red light-emitting devices by using semipolar GaN crystals grown on Si substrates.
The (1-101) InGaN crystals used in this study can be grown at higher temperatures due to their higher In uptake efficiency than that of the conventional (0001) InGaN crystals. In addition, (1-101)InGaN has a different relaxation mechanism than (0001)InGaN, which suppresses the defects that occur when the In content increases. By inserting an InGaN layer under the active layer, it was shown that the emission wavelength could be easily controlled by controlling the relaxation rate of the InGaN layer depending on the InGaN layer thickness rather than on the growth conditions such as TMI supply and temperature. These results indicate that the crystal quality is improved and the emission efficiency is increased.
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