| Budget Amount *help |
¥41,100,000 (Direct Cost: ¥41,100,000)
Fiscal Year 2009: ¥4,800,000 (Direct Cost: ¥4,800,000)
Fiscal Year 2008: ¥7,300,000 (Direct Cost: ¥7,300,000)
Fiscal Year 2007: ¥12,400,000 (Direct Cost: ¥12,400,000)
Fiscal Year 2006: ¥16,600,000 (Direct Cost: ¥16,600,000)
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| Research Abstract |
In this research, SAND method was developed to form metal nanodot (MND) layer. The tungsten nanodots with high density of 1.3x10^<13>/cm^2 and small size of ~1.5nm was successfully formed. The memory transistors with MND floating gate and high-k blocking dielectric were also fabricated. The cobalt nanodots memory shows a long retention time, excellent endurance, and large memory window. A novel memory with potential-engineered dual MND layers was successfully fabricated and operated properly.
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