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Nano-integration of Metal Nanodot Nonvolatile Memory

Research Project

Project/Area Number 18063002
Research Category

Grant-in-Aid for Scientific Research on Priority Areas

Allocation TypeSingle-year Grants
Review Section Science and Engineering
Research InstitutionTohoku University

Principal Investigator

TANAKA Tetsu  Tohoku University, 大学院・医工学研究科, 教授 (40417382)

Co-Investigator(Kenkyū-buntansha) FUKUSHIMA Takafumi  東北大学, 大学院・工学研究科, 助教 (10374969)
PEI Yanli  東北大学, 国際高等研究教育機構, 助教 (70451622)
Project Period (FY) 2006 – 2009
Project Status Completed (Fiscal Year 2009)
Budget Amount *help
¥41,100,000 (Direct Cost: ¥41,100,000)
Fiscal Year 2009: ¥4,800,000 (Direct Cost: ¥4,800,000)
Fiscal Year 2008: ¥7,300,000 (Direct Cost: ¥7,300,000)
Fiscal Year 2007: ¥12,400,000 (Direct Cost: ¥12,400,000)
Fiscal Year 2006: ¥16,600,000 (Direct Cost: ¥16,600,000)
Keywords半導体超微細化 / 量子ドット / 電子デバイス・集積回路 / 半導体物性 / ナノ材料 / 不揮発性メモリ / High-K絶縁膜 / 不挿発性メモリ
Research Abstract

In this research, SAND method was developed to form metal nanodot (MND) layer. The tungsten nanodots with high density of 1.3x10^<13>/cm^2 and small size of ~1.5nm was successfully formed. The memory transistors with MND floating gate and high-k blocking dielectric were also fabricated. The cobalt nanodots memory shows a long retention time, excellent endurance, and large memory window. A novel memory with potential-engineered dual MND layers was successfully fabricated and operated properly.

Report

(6 results)
  • 2009 Annual Research Report   Final Research Report ( PDF )
  • 2008 Annual Research Report   Self-evaluation Report ( PDF )
  • 2007 Annual Research Report
  • 2006 Annual Research Report
  • Research Products

    (88 results)

All 2010 2009 2008 2007 2006 Other

All Journal Article (36 results) (of which Peer Reviewed: 31 results) Presentation (48 results) Book (3 results) Remarks (1 results)

  • [Journal Article] MOSFET Nonvolatile Memory with High-Density Cobalt Nanodots Floating Gate and HfO2 High-k Blocking Dielectric2010

    • Author(s)
      Y. Pei, C. Yin, T. Kojima, J. Bea, H. Kino, T. Fukushima, T. Tanaka, M. Koyanagi
    • Journal Title

      IEEE Transactions on Nanotechnology (in press)

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Investigation of Effects of Post-Deposition Annealing on Cobalt Nanodots Embedded in Silica for Nonvolatile Memory Application2010

    • Author(s)
      Y. Pei, T. Kojima, T. Hiraki, T. Fukushima, T. Tanaka, M. Koyanagi
    • Journal Title

      Japanese Journal of Applied Physics (in print)

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Effects of Postdeposition Annealing on Cobalt Nanodots Embedded in Silica for Nonvolatile Memory Application2010

    • Author(s)
      Yanli Pei, Toshiya Kojima, Tatsuro Hiraki, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
    • Journal Title

      Japanese Journal of Applied Physics (未定, 印刷中)

    • NAID

      40017176042

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Electrical Characterization of MOS Memory Devices with Self-Assembled Tungsten Nano-Dots Dispersed in Silicon Nitride2009

    • Author(s)
      Y. Pei, C. Yin, M. Nishijima, T. Kojima, H. Nohira, T. Fukushima, T. Tanaka, M. Koyanagi
    • Journal Title

      ECS Trans. 18

      Pages: 33-37

    • Related Report
      2009 Final Research Report
  • [Journal Article] Memory Characteristics of Metal-Oxide-Semiconductor Capacitor with High Density Cobalt Nanodots Floating Gate and HfO2 Blocking Dielectric2009

    • Author(s)
      Y. Pei, C. Yin, T. Kojima, M. Nishijima, T. Fukushima, T. Tanaka, M. Koyanagi
    • Journal Title

      Applied Physics Letter 95

      Pages: 33118-33118

    • NAID

      120003728303

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] MOSFET Nonvolatile Memory with High Density Tungsten Nanodots Floating Gate Formed by Self-Assembled Nanodot Deposition2009

    • Author(s)
      Y Pei, C Yin, J C Bea, H Kino, T Fukushima, T Tanaka, M Koyanagi
    • Journal Title

      Semiconductor Science and Technology 24

      Pages: 45022-45022

    • Related Report
      2009 Annual Research Report 2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Formation of high density tungsten nanodots embedded in silicon nitride for nonvolatile memory application2009

    • Author(s)
      Y. Pei, C. Yin, M. Nishijima, T. Kojima, T. Fukushima, T. Tanaka, M. Koyanagi
    • Journal Title

      Applied Physics Letter 94

      Pages: 63108-63108

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Cell characteristics of a multiple alloy nano-dots memory structure2009

    • Author(s)
      J. Bea, Y. Song, K. Lee, G. Lee, T. Tanaka, M. Koyanagi
    • Journal Title

      Semiconductor Science and Technology 24

      Pages: 85013-85013

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] A Reliable Nonvolatile Memory Using Alloy Nanodot Layer with Extremely High Density2009

    • Author(s)
      Y. Song, J. Bea, K. Lee, G. Lee, T. Tanaka, M. Koyanagi
    • Journal Title

      Japanese Journal of Applied Physics 48

      Pages: 106505-106505

    • NAID

      40016796078

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Characteristics of copper spiral inductors utilizing FePtnano-dots film2009

    • Author(s)
      W. -C. Jeong, K. Kiyoyama, K. -W. Lee, A. Noriki, M. Murugesan, T. Fukushima, T. Tanaka, M. Koyanagi
    • Journal Title

      Japanese Journal of Applied Physics Vol.48,No.4

    • NAID

      210000066668

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Electrical Characterization of MOS Memory Devices with Self-Assembled Tungsten Nano-Dots Dispersed in Silicon Nitride2009

    • Author(s)
      Yanli Pei, Chengkuan Yin, Masahiko Nishijima, Toshiya Kojima
    • Journal Title

      The Electrochemical Society Transactions 18

      Pages: 33-37

    • Related Report
      2009 Annual Research Report
  • [Journal Article] Memory Characteristics of Metal-Oxide-Semiconductor Capacitor with High Density Cobalt Nanodots Floating Gate and HfO2 Blocking Dielectric2009

    • Author(s)
      Yanli Pei, Chengkuan Yin, Toshiya Kojima, Masahiko Nishijima, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
    • Journal Title

      Applied Physics Letters 95

      Pages: 33118-33118

    • NAID

      120003728303

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Formation of high density tungsten nanodots embedded in silicon nitride for nonvolatile memory application2009

    • Author(s)
      Yanli Pei, Chengkuan Yin, Masahiko Nishijima, Toshiya Kojima, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
    • Journal Title

      Applied Physics Letters 94

      Pages: 63108-63108

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Cell characteristics of a multiple alloy nano-dots memory structure2009

    • Author(s)
      Ji Chel Bea, Yun Heub Song, Kang-Wook Lee, Gae-Hun Lee, Tetsu Tanaka, Mitsumasa Koyanagi
    • Journal Title

      Semiconductor Science and Technology 24

      Pages: 85013-85013

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] A Reliable Nonvolatile Memory Using Alloy Nanodot Layer with Extremely High Density2009

    • Author(s)
      Yun Heub Song, Ji Chel Bea, Kang Wook Lee, Gae-Hun Lee, Tetsu Tanaka, Mitsumasa Koyanagi
    • Journal Title

      Japanese Journal of Applied Physics 48

      Pages: 106505-106505

    • NAID

      40016796078

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Characteristics of copper spiral inductors utilizing FePtnano-dots film2009

    • Author(s)
      W.-C.Jeong, K.Kiyoyama, K.-W.Lee, A.Noriki, M.Murugesan, T.Fukushima, T.Tanaka, M.Koyanagi
    • Journal Title

      Japanese Journal of Applied Physics 48

    • NAID

      210000066668

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Formation of high density tungsten nanodots embedded in silicon nitride for nonvolatile memory application2009

    • Author(s)
      Yanli Pei, Chengkuan Yin, Masahiko Nishijima, Toshiya Kojima, Takafumi Fukushima, Tetsu Tanaka, and Mitsumasa Koyanagi
    • Journal Title

      Appl. Phys. Lett. 94

      Pages: 63108-63108

    • Related Report
      2008 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] Formation of high density tungsten nanodots embedded in silicon nitride for nonvolatile memory application2009

    • Author(s)
      Yanli Pei
    • Journal Title

      Applied Physics Letters 94

      Pages: 63108-63110

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] MOSFET nonvolatile memory with a high-density tungsten nanodot floating gate formed by self-assembled nanodot deposition2009

    • Author(s)
      Y. Pei
    • Journal Title

      Semiconductor Science and Technology 24

      Pages: 45022-45025

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] "Electrical Characterization of Metal-Oxide-Semiconductor Memory Devices with High-Density Self-Assembled Tungsten Nanodots2008

    • Author(s)
      Y. Pei, T. Fukushima, T. Tanaka, M. Koyanagi
    • Journal Title

      Japanese Journal of Applied Physics 47

      Pages: 2680-2683

    • NAID

      210000064565

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Memory characteristics of self-assembled tungsten nanodots dispersed in silicon nitride2008

    • Author(s)
      Y. Pei, M. Nishijima, T. Fukushima, T. Tanaka, M. Koyanagi
    • Journal Title

      Applied Physics Letter 93

      Pages: 113115-113117

    • NAID

      120002338347

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Investigation of the effect of in situ annealing of FePt nanodots under high vacuum on the chemical states of Fe and Pt by x-ray photoelectron spectroscopy2008

    • Author(s)
      M. Murugesan, J.C. Bea, C. -K. Yin, H. Nohira, E. Ikenaga, T. Hattori, M. Nishijima, T. Fukushima, T. Tanaka, M. Miyao, M. Koyanagi
    • Journal Title

      Journal of Applied Physics 104

      Pages: 74316-74316

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Memory characteristics of self-assembled tungsten nanodots dispersed in silicon nitride2008

    • Author(s)
      Yanli Pei, Masahiko Nishijima, Takafumi Fukushima, Tetsu Tanaka, and Mitsumasa Koyanagi
    • Journal Title

      Appl. Phys. Lett. 93

      Pages: 113115-113117

    • NAID

      120002338347

    • Related Report
      2008 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] Electrical Characterization of Metal-Oxide-Semiconductor Memory Devices with High-Density Self-Assembled Tungsten Nanodots2008

    • Author(s)
      Yanli Pei, Takafumi Fukushima, Tetsu Tanaka, and Mitsumasa Koyanagi
    • Journal Title

      Jpn. J. Appl. Phys. 47

      Pages: 2680-2683

    • NAID

      210000064565

    • Related Report
      2008 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] Electrical Characterization of MetalOxideSemiconductor Memory Devices with High-Density Self-Assembled Tungsten Nanodots2008

    • Author(s)
      Yanli Pei
    • Journal Title

      Japanese Journal of Applied Physics 47

      Pages: 2680-2683

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Memory characteristics of self-assembled tungsten nanodots dispersed in silicon nitride2008

    • Author(s)
      Yanli Pei
    • Journal Title

      Applied Physics Letters 93

      Pages: 113115-113117

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Investigation of the effect of in situ annealing of FePt nanodots under high vacuum on the chemical states of Fe and Pt by x-ray photoelectron spectroscopy2008

    • Author(s)
      M. Murugesan
    • Journal Title

      Journal of Applied Physics 104

      Pages: 74316-74320

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Electrical Characterization of Metal-Oxide-Semiconductor Memory Devices with High-Density Self-Assembled Tungsten Nanodots2008

    • Author(s)
      Y. Pei
    • Journal Title

      Japanese Journal of Applied Physics (印刷中)

    • NAID

      210000064565

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] New Magnetic Nanodot Memory with FePt Nanodots2007

    • Author(s)
      C. Yin, M. Murugesan, J. Bea, M. Oogane, T. Fukushima, T. Tanaka, M. Miyao, S. Samukawa, M. Koyanagi
    • Journal Title

      Japanese Journal of Applied Physics 46

      Pages: 2167-2171

    • NAID

      10022547399

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] New Magnetic Nanodot Memory with FePt Nanodots2007

    • Author(s)
      C-K. Yin
    • Journal Title

      Japanese Journal of Applied Physics Vol.46

      Pages: 2167-2171

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effect of Ion Implantation Damage on Elevated Source/Drain Formation for Ultrathin Body Silicon on Insulator Metal Oxide Semiconductor Field-Effect Transistor2006

    • Author(s)
      K. Oh, T. Sakaguchi, T. Fukushima, M. Koyanagi
    • Journal Title

      Japanese Journal of Applied Physics Vol.45

      Pages: 2965-2969

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Nickel Germanide Formation on Condensed Ge Layer for Ge-on-Insulator Device Application2006

    • Author(s)
      H. Choi, M. Park, T. Fukushima, M. Koyanagki
    • Journal Title

      Japanese Journal of Applied Physics 45

      Pages: 2984-2986

    • NAID

      10022542578

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Analysis of GOI-MOSFET with High-k Gate Dielectric and Metal Gate Fabricated by Ge Condensation Technique2006

    • Author(s)
      M. Park, J. Bea, T. Fukushima, M. Koyanagi
    • Journal Title

      Surface and Interface Analysis 38,12-13

      Pages: 1720-1724

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Effect of Ion Implantation Damage on Elevated Source/Drain Formation for Ultrathin Body Silicon on Insulator Metal Oxide Semiconductor Field-Effect Transistor2006

    • Author(s)
      Kycukjae Oh
    • Journal Title

      Japanese Journal of Applied Physics 45

      Pages: 2965-2969

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Nickel Germanide Formation on Condensed Ge Layer for Ge-on-Insulator Device Application2006

    • Author(s)
      Hoon Choi
    • Journal Title

      Japanese Journal of Applied Physics 45

      Pages: 2984-2986

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Analysis of GOI-MOSFET with High-k Gate Dielectric and Metal Gate Fabricated by Ge Condensation Technique2006

    • Author(s)
      Mungi Park
    • Journal Title

      Surface and Interface Analysis 38

      Pages: 1720-1724

    • Related Report
      2006 Annual Research Report
  • [Presentation] Formation of Cobalt Nanodots Embedded in Silicon Oxide for Nonvolatile Memory Application2010

    • Author(s)
      Yanli Pei, Tatsuro Hiraki, Toshiya Kojima, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
    • Organizer
      China Semiconductor Technology International Conference 2010 (CSTIC2010)
    • Place of Presentation
      Shanghai, China.
    • Year and Date
      2010-03-19
    • Related Report
      2009 Final Research Report
  • [Presentation] A study of Charge Retention Characteristics of Metal Nanodots Memory2010

    • Author(s)
      開達郎, 裴艶麗, 小島俊哉, 〓志哲, 木野久志, 福島誉史, 小柳光正, 田中徹
    • Organizer
      第57回応用物理学関係連合講演会2010年春季
    • Place of Presentation
      神奈川県平塚市東海大学
    • Year and Date
      2010-03-17
    • Related Report
      2009 Final Research Report
  • [Presentation] Formation of Cobalt Nanodots Embedded in Silicon Oxide for Nonvolatile Memory Application2010

    • Author(s)
      裴艶麗, 開達郎, 小島俊哉, 福島誉史, 田中徹, 小柳光正
    • Organizer
      China Semiconductor Technology International Conference(CSTIC2010)
    • Place of Presentation
      Shanghai, China
    • Related Report
      2009 Annual Research Report
  • [Presentation] A study of Charge Retention Characteristics of Metal Nanodots Memory2010

    • Author(s)
      開達郎, 裴艶麗, 小島俊哉, 〓志哲, 木野久志, 福島誉史, 小柳光正, 田中徹
    • Organizer
      第57回応用物理学関係連合講演会2010年春季
    • Place of Presentation
      東海大学
    • Related Report
      2009 Annual Research Report
  • [Presentation] High-Performance MOSFET Nonvolatile Memory with High-Density Cobalt Nanodots Floating Gate and HfO2 High-k Blocking Dielectric2009

    • Author(s)
      Yanli Pei, Chengkuan Yin, Toshiya Kojima, Ji-Cheol Bea, Hisashi Kino, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
    • Organizer
      10th Non-Volatile Memory Technology Symposium (NVMTS 2009)
    • Place of Presentation
      Portland, OR, USA.
    • Year and Date
      2009-10-27
    • Related Report
      2009 Final Research Report
  • [Presentation] メタルナノドットメモリの電荷保持特性に関する研究2009

    • Author(s)
      開達郎, 裴艶麗, 小島俊哉, 〓志哲, 木野久志, 福島誉史, 田中徹, 小柳光正
    • Organizer
      第70回応用物理学関係連合講演会2009年秋季
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Related Report
      2009 Annual Research Report 2009 Final Research Report
  • [Presentation] High-k絶縁膜を有するタングステンナノドットフローティングゲートMOSキャパシタのメモリ特性2009

    • Author(s)
      裴艶麗, 西嶋雅彦, 福島誉史, 田甲徹, 小柳光正
    • Organizer
      第69回応用物理学関係連合講演会2008年秋季
    • Place of Presentation
      中部大学
    • Year and Date
      2009-09-03
    • Related Report
      2009 Final Research Report
  • [Presentation] Synthesis and characterization of magnetic nano-dots for on-chip inductors2009

    • Author(s)
      M. Murugesan, W. -C. Jeong, K. Kiyoyama, K. -W. Lee, J. -C. Bea, C. -K. Yin, T. Fukushima, T. Tanaka, M. Koyanagi
    • Organizer
      第56回応用物理学会学術講演会2009年春季
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-04-02
    • Related Report
      2009 Final Research Report
  • [Presentation] Synthesis and characterization of magnetic nano-dots for on-chip inductors2009

    • Author(s)
      M.Murugesan, W.-C.Jeong, K.Kiyoyama, K.-W.Lee, J.-C.Bea, C.-K.Yin, T.Fukushima, T.Tanaka, M.Koyanagi
    • Organizer
      第56回応用物理学会学術講演会 2009年春季
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-04-02
    • Related Report
      2009 Annual Research Report
  • [Presentation] New Magnetic Nano-Dots Nonvolatile Memory with Resonant Magnetic Tunneling Effect2009

    • Author(s)
      JiChel Bea, M. Murugesan, C. -K. Yin, H. Kino, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
    • Organizer
      第56回応用物理学会学術講演会2009年春季
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-04-01
    • Related Report
      2009 Final Research Report
  • [Presentation] New Magnetic Nano-Dots Nonvolatile Memory with Resonant Magnetic Tunneling Effect2009

    • Author(s)
      JiChel Bea, M.Murugesan, C.-K.Yin, H.Kino, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
    • Organizer
      第56回応用物理学会学術講演会 2009年春季
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-04-01
    • Related Report
      2009 Annual Research Report
  • [Presentation] A Co-Nanodots Nonvolatile Memory with High-k Blocking Oxide for Implantable Biomedical Devices2009

    • Author(s)
      C.K. Yin, Y.L. Pei, T. Kojima, T. Fukushima, M. Koyanagi, T. Tanaka
    • Organizer
      9th International Symposium on Nano-Biomedical Engineering
    • Place of Presentation
      Sendai, Japan.
    • Year and Date
      2009-03-28
    • Related Report
      2009 Final Research Report
  • [Presentation] Electrical Characterization of MOS Memory Devices with Self-assembled Tungsten Nano-dots Dispersed in Silicon Nitride2009

    • Author(s)
      Y. Pei, C. Yin, M. Nishijima, T. Kojima, H. Nohira, T. Fukushima, T. Tanaka, M. Koyanagi
    • Organizer
      ISTC/CSTIC 2009
    • Place of Presentation
      Shanghai, China
    • Year and Date
      2009-03-19
    • Related Report
      2009 Final Research Report
  • [Presentation] Electrical Characterization of MOS Memory Devices with Self-assembled Tungsten Nano-dots Dispersed in Silicon Nitride2009

    • Author(s)
      Y. Pei
    • Organizer
      International Semiconductor Technology Conference & China Semiconductor Technology International Conference 2009
    • Place of Presentation
      Shanghai, China
    • Year and Date
      2009-03-19
    • Related Report
      2008 Annual Research Report
  • [Presentation] High-Performance MOSFET Nonvolatile Memory with High-Density Cobalt Nanodots Floating Gate and HfO2 High-k Blocking Dielectric2009

    • Author(s)
      Yanli Pei, Chengkuan Yin, Toshiya Kojima, Ji-Cheol Bea, Hisashi Kino, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
    • Organizer
      10^<th> Non-Volatile Memory Technology Symposium(NVMTS 2009)
    • Place of Presentation
      Portland, OR, USA
    • Related Report
      2009 Annual Research Report
  • [Presentation] Study of Power Supply System for Fully Implantable Retinal Prosthesis Chip2009

    • Author(s)
      Woo-Cheol Jeong
    • Organizer
      9th International Symposium on Nano-Biomedical Engineering
    • Place of Presentation
      Sendai, Japan
    • Related Report
      2008 Annual Research Report
  • [Presentation] A Co-Nanodots Nonvolatile Memory with High-k Blocking Oxide for Implantable Biomedical Devices2009

    • Author(s)
      C. K. Yin
    • Organizer
      9th International Symposium on Nano-Biomedical Engineering
    • Place of Presentation
      Sendai, Japan
    • Related Report
      2008 Annual Research Report
  • [Presentation] Characteristics of Magnetic Film Inductors with FePt Nano-Dots2008

    • Author(s)
      W. -C. Jeong, K. Kiyoyama, M. Murugesan, T. Fukushima, T. Tanaka, M. Koyanagi
    • Organizer
      The 2008 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba
    • Year and Date
      2008-09-26
    • Related Report
      2009 Final Research Report
  • [Presentation] Characteristics of Magnetic Film Inductors with FePt Nano-Dots2008

    • Author(s)
      W.-C. Jeong
    • Organizer
      The 2008 International Conference on Solid State Devices and Materiqls
    • Place of Presentation
      Tsukuba, Japan
    • Year and Date
      2008-09-26
    • Related Report
      2008 Annual Research Report
  • [Presentation] Memory Characterization of MOS Memory Device with High Density Self-Assembled Tungsten Nanodots Floating Gate and HfO2 Blocking Dielectric2008

    • Author(s)
      Yanli Pei, Masahiko Nishijima, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
    • Organizer
      The 2008 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba
    • Year and Date
      2008-09-25
    • Related Report
      2009 Final Research Report
  • [Presentation] Memory Characterization of MOS Memory Device with High Density Self-Assembled Tungsten Nanodots Floating Gate and HfO2 Blocking Dielectric2008

    • Author(s)
      Yanli Pei, Masahiko Nishijima, Takafumi Fukushima, Tetsu Tanaka, and Mitsumasa Koyanagi
    • Organizer
      The 2008 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba International Congress Center, Tsukuba, Japan.
    • Year and Date
      2008-09-25
    • Related Report
      2008 Self-evaluation Report
  • [Presentation] Memory Characterization of MOS Memory Device with High Density Self-Assembled Tungsten Nanodots Floating Gate and HfO2 Blocking Dielectric2008

    • Author(s)
      Yanli Pei
    • Organizer
      The 2008 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba, Japan
    • Year and Date
      2008-09-24
    • Related Report
      2008 Annual Research Report
  • [Presentation] High-k絶縁膜を有するタングステンナノドットフローティングゲートMOS'キャパシタのメモリ特性2008

    • Author(s)
      裴艶麗
    • Organizer
      第69回応用物理学関係連合講演会2008年秋季
    • Place of Presentation
      中部大学
    • Year and Date
      2008-09-03
    • Related Report
      2008 Annual Research Report
  • [Presentation] New Non-Volatile Memory with Magnetic Nano-Dots Floating Gate2008

    • Author(s)
      M. Koyanagi, T. Tanaka
    • Organizer
      The 3rd International Symposium on Tera-bit-level Non-volatile Memories
    • Place of Presentation
      Korea
    • Year and Date
      2008-08-29
    • Related Report
      2009 Final Research Report
  • [Presentation] New Non-Volatile Memory with Magnetic Nano-Dots Floating Gate2008

    • Author(s)
      M. Koyanagi
    • Organizer
      The 3rd International Symposium on Tera-bit-level Nonvolatile Memories
    • Place of Presentation
      Korea Seoal
    • Year and Date
      2008-08-29
    • Related Report
      2008 Annual Research Report
  • [Presentation] Characterization of Metal Nanodots Nonvolatile Memory2008

    • Author(s)
      Yanli Pei, Masahiko Nishijima, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
    • Organizer
      シリコン材料・デバイス研究会
    • Place of Presentation
      東京
    • Year and Date
      2008-06-10
    • Related Report
      2009 Final Research Report
  • [Presentation] Characterization of Metal Nanodots Nonvolatile Memory2008

    • Author(s)
      裴艶麗
    • Organizer
      電子情報通信学会シリコン材料・デバイス研究会
    • Place of Presentation
      東京大学
    • Year and Date
      2008-06-10
    • Related Report
      2008 Annual Research Report
  • [Presentation] FM/I/Nano-Dot FM構造でのスピン電子の磁気トンネル効果2008

    • Author(s)
      〓志哲, Murugesan Mariappan, Cheng KuanYin, 福島誉史, 田中徹, 寒川誠二, 河野省三, 佐道泰造, 宮尾正信, 名取研二, 小柳光正
    • Organizer
      第55回応用物理学関係連合講演会2008春季
    • Place of Presentation
      日本大学
    • Year and Date
      2008-03-30
    • Related Report
      2009 Final Research Report
  • [Presentation] シリコン窒化膜中に埋め込んだタングステンナノドットフローティングゲートMOSキャパシタのメモリ特性2008

    • Author(s)
      裴艶麗, 福島誉史, 田中徹, 小柳光正
    • Organizer
      第55回応用物理学関係連合講演会2008年春季
    • Place of Presentation
      日本大学
    • Year and Date
      2008-03-27
    • Related Report
      2009 Final Research Report
  • [Presentation] Term Retention Characteristics of MOS Memory Devices with Self-Assembled Tungsten Nano-Dot Dispersed in Silicon Nitride2008

    • Author(s)
      Y. Pei, T. Fukushima, T. Tanaka, M. Koyanagi
    • Organizer
      MRS 2008 Spring Meeting
    • Place of Presentation
      San Francisco, USA.
    • Year and Date
      2008-03-25
    • Related Report
      2009 Final Research Report
  • [Presentation] Study of electromagnetic inductor for power delivery to three-dimensional retinal prosthesis system2008

    • Author(s)
      Woo-Cheol Jeong
    • Organizer
      GPBE/NUS-Tohoku Graduate Student Conference in Bioengineering
    • Place of Presentation
      Singapore, Mational Universiey of lingapore
    • Related Report
      2008 Annual Research Report
  • [Presentation] Term Retention Characteristics of MOS Memory Devices with Self-Asse mbled Tungsten Nano-Dot Dispersed in Silicon Nitride2008

    • Author(s)
      Y. Pei
    • Organizer
      MRS 2008 Spring Meeting
    • Place of Presentation
      San Francisco, USA
    • Related Report
      2007 Annual Research Report
  • [Presentation] シリコン窒化膜中に埋め込んだタングステンナノドットフローティングゲートMOSキャパシタのメモリ特性2008

    • Author(s)
      裴艶麗
    • Organizer
      第55回応用物理学会学術講演会2008春
    • Place of Presentation
      日本大学,日本
    • Related Report
      2007 Annual Research Report
  • [Presentation] FePtを用いた磁気MOSキャパシタのC-V特性2008

    • Author(s)
      M. Murugesan
    • Organizer
      第55回応用物理学会学術講演会2008春
    • Place of Presentation
      日本大学,日本
    • Related Report
      2007 Annual Research Report
  • [Presentation] FM/I/Nano-Dot FM構造でのスピン電子の磁気トンネル効果2008

    • Author(s)
      〓志哲
    • Organizer
      第55回応用物理学会学術講演会2008春
    • Place of Presentation
      日本大学,日本
    • Related Report
      2007 Annual Research Report
  • [Presentation] Investigation of FePt Nano-Dots Fabricated by Self-Assembled Nano-Dot Deposition Method Using X-ray Photoelectron Spectroscopy2007

    • Author(s)
      M. Murugesan, J.C. Bea, C-K. Yin, H. Nohira, E. Ikenaga, T. Hattori, M. Nishijima, T. Fukushima, T. Tanaka, M. Miyao, M. Koyanagi
    • Organizer
      The 2007 International Conference on Solid State Device and Materials
    • Place of Presentation
      Tsukuba, Japan
    • Year and Date
      2007-09-21
    • Related Report
      2009 Final Research Report 2007 Annual Research Report
  • [Presentation] Memory Window Enhancement of MOS Memory Devices with High Density Self-Assembled Tungsten Nano-dot2007

    • Author(s)
      Yanli Pei, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
    • Organizer
      The 2007 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba, Japan.
    • Year and Date
      2007-09-19
    • Related Report
      2009 Final Research Report
  • [Presentation] Evaluation of FePt nano-dots by X-ray photoelectron spectroscopy2007

    • Author(s)
      M. Murugesan, J.C. Bea, C. -K. Yin, H. Nohira, E. Ikenaga, T. Hattori, M. Nishijima, T. Fukushima, T. Tanaka, M. Miyao, M. Koyanagi
    • Organizer
      第68回応用物理学会学術講演会2007秋
    • Place of Presentation
      北海道工業大学
    • Year and Date
      2007-09-07
    • Related Report
      2009 Final Research Report
  • [Presentation] 金属ナノドットフローティングゲートMOSキャパシタのメモリ特性2007

    • Author(s)
      裴艶麗, 福島誉史, 田中徹, 小柳光正
    • Organizer
      第68回応用物理学会学術講演会2007秋
    • Place of Presentation
      北海道工業大学
    • Year and Date
      2007-09-06
    • Related Report
      2009 Final Research Report
  • [Presentation] Magnetic characteristics of FePt nanodots formed by a self-assembled nanodot deposition method2007

    • Author(s)
      C.K. Yin, H. Choi, J.C. Bea, M. Murugesan, J.H. Yoo, T. Fukushima, Y. Murakami, T. Tanaka, D. Shindo, M. Miyao, M. Koyanagi
    • Organizer
      NSTI Nanotech 2007 10th Annual
    • Place of Presentation
      Santa Clara, USA.
    • Year and Date
      2007-03-23
    • Related Report
      2009 Final Research Report
  • [Presentation] Fabrication of Magnetic Tunnel Junction with FePt Nanodots for Magnetic Nanodot Memory2007

    • Author(s)
      Cheng-Kuan Yin, Mariappan Murugesan, Ji-Chel Bea, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
    • Organizer
      The 6th International Semiconductor Technology Conference (ISTC 2007) (Invited speech)
    • Place of Presentation
      Shanghai, China.
    • Year and Date
      2007-03-19
    • Related Report
      2009 Final Research Report
  • [Presentation] Fundamental Microstructure and Magnetic Properties of Self-Assembled FePt Nano-Dot Film Annealed by using Magnetic Field Annealing2007

    • Author(s)
      J.C. Bea, M. Murugesan, C. -K. Yin, M. Nishijima, T. Fukushima, T. Tanaka, M. Miyao, M. Koyanagi
    • Organizer
      The Fifth Nanotechnology Symposium, JAPAN NANO 2007
    • Place of Presentation
      Tokyo, Japan.
    • Year and Date
      2007-02-20
    • Related Report
      2009 Final Research Report
  • [Presentation] Characteristics of Metal Gate GOI-MOSFET with High-k Gate Dielectric Fabricated by Ge Condensation Method2007

    • Author(s)
      Woo-Cheol Jeong, Mungi Park, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi
    • Organizer
      Pusan-Tohoku "21COE" Joint Workshop on Mechanical Science based on Nanotechnology
    • Place of Presentation
      Pusan, Korea.
    • Year and Date
      2007-01-08
    • Related Report
      2009 Final Research Report
  • [Presentation] Magnetic characteristics of FePt nanodots formed by a self-assembled nanodot deposition method2007

    • Author(s)
      C-K. Yin
    • Organizer
      NSTI Nanotech 2007 10th Annual
    • Place of Presentation
      Santa Clara, USA
    • Related Report
      2007 Annual Research Report
  • [Presentation] Fabrication of Magnetic Tunnel Junction with FePt Nanodots for Magnetic Nanodot Memory2007

    • Author(s)
      C-K. Yin
    • Organizer
      The 6th International Semiconductor Technology Conference (ISTC 2007)
    • Place of Presentation
      Shanghai, China
    • Related Report
      2007 Annual Research Report
  • [Presentation] Memory Window Enhancement of MOS Memory Devices with High Density Self-Assembled Tungsten Nano-dot2007

    • Author(s)
      Y. Pei
    • Organizer
      The 2007 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba, Japan
    • Related Report
      2007 Annual Research Report
  • [Presentation] 金属ナノドットフローティングゲートMOSキャパシタのメモリ特性2007

    • Author(s)
      裴艶麗
    • Organizer
      第68回応用物理学会学術講演会2007秋
    • Place of Presentation
      北海道工業大学,日本
    • Related Report
      2007 Annual Research Report
  • [Presentation] Evaluation of FePt nano-dots by X-ray photoelectron spectroscopy2007

    • Author(s)
      M. Murugesan
    • Organizer
      第68回応用物理学会学術講演会2007秋
    • Place of Presentation
      北海道工業大学,日本
    • Related Report
      2007 Annual Research Report
  • [Book] "次世代半導体メモリーの最新技術", 第6章:その他のメモリー最新技術2009

    • Author(s)
      田中徹, 裴艶麗
    • Publisher
      シーエムシー出版
    • Related Report
      2009 Final Research Report
  • [Book] 次世代半導体メモリの最新技術",第6章第3節:金属ナノドット不揮発性メモリ2009

    • Author(s)
      田中 徹, 裴 艶麗
    • Publisher
      シーエムシー出版
    • Related Report
      2008 Self-evaluation Report
  • [Book] 次世代半導体メモリーの最新技術2009

    • Author(s)
      田中徹
    • Publisher
      シーエムシー出版
    • Related Report
      2008 Annual Research Report
  • [Remarks]

    • URL

      http://www.sd.mech.tohoku.ac.jp/Site/Home.html

    • Related Report
      2008 Self-evaluation Report

URL: 

Published: 2006-04-01   Modified: 2018-03-28  

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