| Project/Area Number |
18063005
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | The University of Tokyo |
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Principal Investigator |
TAKAGI Shinichi The University of Tokyo, 大学院・工学系研究科, 教授 (30372402)
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| Co-Investigator(Kenkyū-buntansha) |
SUGAHARA Satoshi 東京工業大学, 理工学研究科附属像情報工学研究施設, 准教授 (40282842)
竹中 充 東京大学, 大学院・工学系研究科, 准教授 (20451792)
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| Co-Investigator(Renkei-kenkyūsha) |
TAKENAKA Mitsuru 東京大学, 大学院・工学系研究科, 准教授 (20451792)
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| Project Period (FY) |
2006 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥108,400,000 (Direct Cost: ¥108,400,000)
Fiscal Year 2009: ¥28,100,000 (Direct Cost: ¥28,100,000)
Fiscal Year 2008: ¥28,100,000 (Direct Cost: ¥28,100,000)
Fiscal Year 2007: ¥26,100,000 (Direct Cost: ¥26,100,000)
Fiscal Year 2006: ¥26,100,000 (Direct Cost: ¥26,100,000)
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| Keywords | ゲルマニウム / MOSFET / GOI / 移動度 / 面方位 / スピン / 強磁性 |
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| Research Abstract |
In order to realize high performance Ge devices, (110)-oriented Ge-On-Insulator structures have been realized and high hole mobility pMOSFETs have been fabricated on the structures. Also, the formation and the evaluation of thermal oxidation GeO2/Ge MOS structures have revealed the superior MOS interfaces with low density of interface states. In addition, high electron and hole mobility have been realized in MOSFETs using this interface. Also, the effectiveness of atomic hydrogen annealing has been demonstrated for reducing the leakage current of Ge devices.
The development of half-metal Source/Drain technologies for Ge MOSFETs using full heusler alloys has been conducted. A method of rapid thermal annealing for epitaxial Ge/ultrathin SOI/buried oxide/Si has been proposed and has realized highly-ordered Go2FeGe layers.
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