| Project/Area Number |
18063016
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | Shimane University |
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Principal Investigator |
TSUCHIYA Toshiaki Shimane University, 総合理工学部, 教授 (20304248)
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| Co-Investigator(Renkei-kenkyūsha) |
SAKURABA Masao 東北大学, 電気通信研究所, 准教授 (30271993)
MOGAMI Tohru , (株)半導体先端テクノロジーズ
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| Research Collaborator |
TAKEHIRO Shinobu 東北大学, 電気通信研究所, 助手
MISHIMA Seiji 島根大学, 総合理工学研究科, 博士前期課程
YOSHIDA Keiichi 島根大学, 総合理工学研究科, 博士前期課程
MORI Yuki 島根大学, 総合理工学研究科, 博士前期課程
MORIMURA Yuta 島根大学, 総合理工学研究科, 博士前期課程
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| Project Period (FY) |
2006 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥53,700,000 (Direct Cost: ¥53,700,000)
Fiscal Year 2009: ¥6,400,000 (Direct Cost: ¥6,400,000)
Fiscal Year 2008: ¥13,900,000 (Direct Cost: ¥13,900,000)
Fiscal Year 2007: ¥16,400,000 (Direct Cost: ¥16,400,000)
Fiscal Year 2006: ¥17,000,000 (Direct Cost: ¥17,000,000)
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| Keywords | マイクロ・ナノデバイス / 半導体超微細化 / 電子デバイス・機器 / 表面・界面物性 / SiGe / ヘテロ構造 / MOS / 揺らぎ / 界面準位 / 雑音 |
|---|
| Research Abstract |
We found that charge pumping characteristics in MOSFETs depend on on-time of the gate pulse used in the measurements, and proposed an ultimate method to evaluate the fluctuation in the properties of individual interface traps. Using the method, we successfully observed the fluctuations in the number and carrier capture rate of interface traps in nanoscale MOSFETs. These results will greatly influence the advancement of the research on noise in MOS devices including clarification of the RTN mechanism.
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