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Fluctuations in Interface Properties and Noise in Nano-Scaled Devices

Research Project

Project/Area Number 18063016
Research Category

Grant-in-Aid for Scientific Research on Priority Areas

Allocation TypeSingle-year Grants
Review Section Science and Engineering
Research InstitutionShimane University

Principal Investigator

TSUCHIYA Toshiaki  Shimane University, 総合理工学部, 教授 (20304248)

Co-Investigator(Renkei-kenkyūsha) SAKURABA Masao  東北大学, 電気通信研究所, 准教授 (30271993)
MOGAMI Tohru  , (株)半導体先端テクノロジーズ
Research Collaborator TAKEHIRO Shinobu  東北大学, 電気通信研究所, 助手
MISHIMA Seiji  島根大学, 総合理工学研究科, 博士前期課程
YOSHIDA Keiichi  島根大学, 総合理工学研究科, 博士前期課程
MORI Yuki  島根大学, 総合理工学研究科, 博士前期課程
MORIMURA Yuta  島根大学, 総合理工学研究科, 博士前期課程
Project Period (FY) 2006 – 2009
Project Status Completed (Fiscal Year 2009)
Budget Amount *help
¥53,700,000 (Direct Cost: ¥53,700,000)
Fiscal Year 2009: ¥6,400,000 (Direct Cost: ¥6,400,000)
Fiscal Year 2008: ¥13,900,000 (Direct Cost: ¥13,900,000)
Fiscal Year 2007: ¥16,400,000 (Direct Cost: ¥16,400,000)
Fiscal Year 2006: ¥17,000,000 (Direct Cost: ¥17,000,000)
Keywordsマイクロ・ナノデバイス / 半導体超微細化 / 電子デバイス・機器 / 表面・界面物性 / SiGe / ヘテロ構造 / MOS / 揺らぎ / 界面準位 / 雑音
Research Abstract

We found that charge pumping characteristics in MOSFETs depend on on-time of the gate pulse used in the measurements, and proposed an ultimate method to evaluate the fluctuation in the properties of individual interface traps. Using the method, we successfully observed the fluctuations in the number and carrier capture rate of interface traps in nanoscale MOSFETs. These results will greatly influence the advancement of the research on noise in MOS devices including clarification of the RTN mechanism.

Report

(6 results)
  • 2009 Annual Research Report   Final Research Report ( PDF )
  • 2008 Annual Research Report   Self-evaluation Report ( PDF )
  • 2007 Annual Research Report
  • 2006 Annual Research Report
  • Research Products

    (53 results)

All 2010 2009 2008 2007 2006 Other

All Journal Article (20 results) (of which Peer Reviewed: 7 results) Presentation (29 results) Remarks (4 results)

  • [Journal Article] ナノスケールMOSデバイスにおける界面物性の揺らぎ-界面トラップ1個1個を検出して評価する-2009

    • Author(s)
      土屋敏章
    • Journal Title

      応用物理 第78巻,第9号

      Pages: 868-872

    • NAID

      10025088628

    • Related Report
      2009 Final Research Report
  • [Journal Article] ナノスケールMOSデバイスにおける界面物性の揺らぎ-界面トラップ1個1個を検出して評価する-2009

    • Author(s)
      土屋敏章
    • Journal Title

      応用物理 78(9)

      Pages: 868-872

    • NAID

      10025088628

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth2008

    • Author(s)
      S. Takehiro, M. Sakuraba, T. Tsuchiya, J. Murota
    • Journal Title

      Thin Solid Films vol.517,no.1

      Pages: 346-349

    • Related Report
      2009 Final Research Report
  • [Journal Article] High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth2008

    • Author(s)
      S. Takehiro, M. Sakuraba, T. Tsuchiya, and J. Murota
    • Journal Title

      Thin Solid Films 517

      Pages: 346-349

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Hot carrier degradation of a SiGe/Si hetero-interface and experimental estimation of the density of locally-generated hetero-interface traps2007

    • Author(s)
      T. Tsuchiya, S. Mishima, M. Sakuraba, J. Murota
    • Journal Title

      Jpn. J. Appl. Phys. vol.46,no.8A

      Pages: 5015-5020

    • NAID

      40015538121

    • Related Report
      2009 Final Research Report
  • [Journal Article] Hot carrier degradation of a SiGe/Si hetero-interface and experimental estimation of the density of locally-generated hetero-interface traps2007

    • Author(s)
      T.Tsuchiya, S.Mishima, M.Sakuraba, and J.Murota
    • Journal Title

      Jpn.J.Appl.Phys. vol.46, no.8A

      Pages: 5015-5020

    • NAID

      40015538121

    • Related Report
      2008 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] Hot carrier degradation of a SiGe/Si hetero-interface and experimental estimation of the density of locally-generated hetero-interface traps2007

    • Author(s)
      T. Tsuchiya, S. Mishima, M. Sakuraba, and J. Murota
    • Journal Title

      Jpn. J. Appl. Phys. 46

      Pages: 5015-5020

    • NAID

      40015538121

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Influence of Grain Boundaries on the Temperature Dependence of Device Characteristics and on Hot Carrier Effects in Low-Temperature Polycrystalline Silicon Thin Film Transistors Containing Large Grains2007

    • Author(s)
      T. Tsuchiya, T. Miura, T. Yamai, G. Kawachi, and M. Matsumura
    • Journal Title

      Jpn. J. Appl. Plys 46

      Pages: 1312-1317

    • NAID

      10018902148

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] BドープSiGe選択CVD成長により形成された極浅ソース・ドレインと高Ge比率歪SiGeヘテロチャネルを有する高性能pMOSFET2006

    • Author(s)
      竹廣忍, 櫻庭政夫, 室田淳一, 土屋敏章
    • Journal Title

      電気学会論文誌C, IEEJ Trans. EIS. vol.126,no.9

      Pages: 1079-1082

    • NAID

      10019289946

    • Related Report
      2009 Final Research Report
  • [Journal Article] SiGe/SiヘテロMOSFETにおけるホットキャリアによるヘテロ界面準位の発生2006

    • Author(s)
      土屋敏章, 櫻庭政夫, 室田淳一
    • Journal Title

      電気学会論文誌C, IEEJ Trans. EIS. vol.126,no.9

      Pages: 1101-1106

    • NAID

      10019289991

    • Related Report
      2009 Final Research Report
  • [Journal Article] Characterization of Hot-Carrier Degraded SiGe/Si-Hetero-PMOSFETs2006

    • Author(s)
      T. Tsuchiya, M. Sakuraba, J. Murota
    • Journal Title

      Thin Solid Films Vol.508,Issues1-2

      Pages: 326-328

    • NAID

      120005587465

    • Related Report
      2009 Final Research Report
  • [Journal Article] Characterization of Hot-Carrier Degraded SiGe/Si-Hetero-PMOSFETs2006

    • Author(s)
      T.Tsuchiya, M.Sakuraba, and J.Murota
    • Journal Title

      Thin Solid Films Vol.508, Issues 1-2

      Pages: 326-328

    • NAID

      120005587465

    • Related Report
      2008 Self-evaluation Report
    • Peer Reviewed
  • [Journal Article] Characterization of Hot-Carrier Degraded SiGe/Si-Hetero-PMOSFETs2006

    • Author(s)
      Toshiaki Tsuchiya, Masao Sakuraba, Junichi Murota
    • Journal Title

      Thin Solid Films Vol. 508・Issues 1-2

      Pages: 326-328

    • NAID

      120005587465

    • Related Report
      2006 Annual Research Report
  • [Journal Article] SiGe/SiヘテロMOSFETにおけるホットキャリアによるヘテロ界面準位の発生2006

    • Author(s)
      土屋敏章, 櫻庭政夫, 室田淳一
    • Journal Title

      電気学会論文誌C, IEEJ Trans. EIS vol. 126・no. 9

      Pages: 1101-1106

    • NAID

      10019289991

    • Related Report
      2006 Annual Research Report
  • [Journal Article] BドープSiGe選択CVD成長により形成された極浅ソース・ドレインと高Ge比率歪SiGeヘテロチャネルを有する高性能pMOSFET2006

    • Author(s)
      竹廣 忍, 櫻庭政夫, 室田淳一, 土屋敏章
    • Journal Title

      電気学会論文誌C, IEEJ Trans. EIS vol. 126・no. 9

      Pages: 1079-1082

    • NAID

      10019289946

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices2006

    • Author(s)
      Toshiaki Tsuchiya, Masao Sakuraba, Junichi Murota
    • Journal Title

      Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD2006)

      Pages: 21-24

    • NAID

      110004813188

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Hot-Carrier-Degradation of Hetero-Interface in SiGe/Si-Hetero-MOSFETs2006

    • Author(s)
      Toshiaki Tsuchiya, Masao Sakuraba, Junichi Murota
    • Journal Title

      2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics

      Pages: 83-84

    • NAID

      10018312310

    • Related Report
      2006 Annual Research Report
  • [Journal Article] The Instability of the SiGe/Si-Hetero-Interface in Hetero-MOSFETs due to Bias Stress2006

    • Author(s)
      Toshiaki Tsuchiya, Seiji Mishima, Masao Sakuraba, Junichi Murota
    • Journal Title

      IEEE Semiconductor Interface Specialist Conference (SISC 2006)

      Pages: 15-15

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Direct Observation of Fluctuations in the Number and Individual Electronic Properties of Interface Traps in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors

    • Author(s)
      T. Tsuchiya, Y. Mori, Y. Morimura, T. Mogami, Y. Ohji
    • Journal Title

      Jpn. J. Appl. Phys. (印刷中)

    • NAID

      40017176026

    • Related Report
      2009 Final Research Report
  • [Journal Article] Direct Observation of Fluctuations in the Number and Individual Electronic Properties of Interface Traps in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors

    • Author(s)
      T.Tsuchiya, Y.Mori, Y.Morimura, T.Mogami, Y.Ohji
    • Journal Title

      Jpn.J.Appl.Phys. (印刷中)

    • NAID

      40017176026

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Presentation] Fluctuation in Electronic Properties of Interface Traps in Nano-MOSFETs2010

    • Author(s)
      T. Tsuchiya, Y. Mori, Y. Morimura, T. Mogami
    • Organizer
      4th International Workshop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Sendai
    • Related Report
      2009 Final Research Report
  • [Presentation] Fluctuation in Electronic Properties of Interface Traps in Nano-MOSFETs2010

    • Author(s)
      T.Tsuchiya, Y.Mori, Y.Morimura, T.Mogami
    • Organizer
      4th International Workshop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      東北大学(仙台)
    • Related Report
      2009 Annual Research Report
  • [Presentation] Direct Observation of Fluctuation in the Carrier Capture Process of Single Interface Traps in MOSFETs2010

    • Author(s)
      M.Hu, Y.Morimural, T.Mogami, T.Tsuchiya
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学(平塚市)
    • Related Report
      2009 Annual Research Report
  • [Presentation] 界面準位を数個含む極微細MOSFETのチャージポンピング特性2009

    • Author(s)
      森村由太, 最上徹, 大路譲, 土屋敏章
    • Organizer
      応用物理学会中国四国支部 2009年度学術講演会
    • Place of Presentation
      広島大学(広島)
    • Year and Date
      2009-08-01
    • Related Report
      2009 Annual Research Report
  • [Presentation] ナノスケールMOSFETにおけるSi/SiO2界面準位数の揺らぎ2009

    • Author(s)
      森祐樹, 最上徹, 大路譲, 土屋敏章
    • Organizer
      応用物理学会中国四国支部 2009年度学術講演会
    • Place of Presentation
      広島大学(広島)
    • Year and Date
      2009-08-01
    • Related Report
      2009 Annual Research Report
  • [Presentation] MOSFETの界面準位密度に及ぼすチャネルドープの影響2009

    • Author(s)
      嘉藤俊宏, 最上徹, 大路譲, 土屋敏章
    • Organizer
      応用物理学会中国四国支部 2009年度学術講演会
    • Place of Presentation
      広島大学(広島)
    • Year and Date
      2009-08-01
    • Related Report
      2009 Annual Research Report
  • [Presentation] Direct Observation of Fluctuations in Both the Number and Individual Carrier Capture Rate of Interface Traps in Small Gate-Area MOSFETs2009

    • Author(s)
      T. Tsuchiya, Y. Mori, Y. Morimura, T. Mogami, Y. Ohji
    • Organizer
      Proc. of the 39th European Solid-State Device Research Conference
    • Place of Presentation
      Athens, Greece
    • Related Report
      2009 Final Research Report
  • [Presentation] Direct Observation of Fluctuations in Both the Number and Individual Carrier Capture Rate of Interface Traps in Small Gate-Area MOSFETs2009

    • Author(s)
      T.Tsuchiya, Y.Mori, Y.Morimura, T.Mogami, Y.Ohji
    • Organizer
      39th European Solid-State Device Research Conference
    • Place of Presentation
      アテネ(ギリシャ)
    • Related Report
      2009 Annual Research Report
  • [Presentation] SiGe/SiヘテロチャネルMOSFETにおける過渡チャージポンピング特性2008

    • Author(s)
      土屋敏章, 櫻庭政夫, 室田淳一
    • Organizer
      電気学会電子材料研究会
    • Place of Presentation
      仙台
    • Year and Date
      2008-09-27
    • Related Report
      2008 Annual Research Report
  • [Presentation] SiGeチャネルMOSトランジスタのホットキャリア効果2008

    • Author(s)
      森祐樹, 櫻庭政夫, 室田淳一, 土屋敏章
    • Organizer
      応用物理学会中国四国支部2008年度学術講演会
    • Place of Presentation
      松山
    • Year and Date
      2008-08-02
    • Related Report
      2008 Annual Research Report
  • [Presentation] MOSデバイスにおける信頼性物理とヘテロ界面に関する研究2008

    • Author(s)
      土屋敏章
    • Organizer
      応用物理学会中国四国支部貢献賞受賞記念講演
    • Place of Presentation
      松山
    • Year and Date
      2008-08-01
    • Related Report
      2008 Annual Research Report
  • [Presentation] Capture/Emission Process of Carriers in Interface Traps Observed in the Transient Charge-Pumping Characteristics of MOSFETs2008

    • Author(s)
      T. Tsuchiya, K. Yoshida, M. Sakuraba, J. Murota
    • Organizer
      39th IEEE Semiconductor Interface Specialist Conference (SISC 2008)
    • Place of Presentation
      San Diego, USA
    • Related Report
      2009 Final Research Report
  • [Presentation] Transient Charge-Pumping Characteristics Related to Heterointerface Traps in SiGe/Si-Hetero-Channel pMOSFETs2008

    • Author(s)
      T. Tsuchiya, K. Yoshida, M. Sakuraba, J. Murota
    • Organizer
      4th International Workshop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Sendai, Japan
    • Related Report
      2009 Final Research Report
  • [Presentation] Transient Charge-Pumping Characteristics Related to Heterointerface Traps in SiGe/Si-Hetero-Channel pMOSFETs2008

    • Author(s)
      T. Tsuchiya, K. Yoshida, M. Sakuraba, J. Murota
    • Organizer
      4th International SiGe Technology and Device Meeting
    • Place of Presentation
      Hsinchu, Taiwan
    • Related Report
      2009 Final Research Report
  • [Presentation] Capture/Emission Process of Carriers in Interface Traps Observed in the Transient Charge-Pumping Characteristics of MOSFETs2008

    • Author(s)
      T.Tsuchiya, K.Yoshida, M.Sakuraba, and J.Murota
    • Organizer
      39th IEEE Semiconductor Interface Specialist Conference (IEEE SISC)
    • Place of Presentation
      San Diego, USA
    • Related Report
      2008 Self-evaluation Report
  • [Presentation] Transient Charge-Pumping Characteristics Related to Heterointerface Traps in SiGe/Si-Hetero-Channel pMOSFETs2008

    • Author(s)
      T.Tsuchiya, K.Yoshida, M.Sakuraba, and J.Murota
    • Organizer
      4th International SiGe Technology and Device Meeting (ISTDM)
    • Place of Presentation
      Hsinchu, Taiwan
    • Related Report
      2008 Self-evaluation Report
  • [Presentation] Capture/Emission Process of Carriers in Interface Traps Observed inthe Transient Charge-Pumping Characteristics of MOSFETs2008

    • Author(s)
      T. Tsuchiya, K. Yoshida, M. Sakuraba, and J. Murota
    • Organizer
      39th IEEE Semiconductor Interface SpecialistConference (SISC 2008)
    • Place of Presentation
      San Diego (USA)
    • Related Report
      2008 Annual Research Report
  • [Presentation] Transient Charge-Pumping Characteristics Related to Heterointerface Traps in SiGe/Si-Hetero-Channel pMOSFETs2008

    • Author(s)
      T. Tsuchiya, K. Yoshida, M. Sakuraba, and J. Murota
    • Organizer
      4th International SiGe Technology and Device Meeting
    • Place of Presentation
      Hsinchu (Taiwan)
    • Related Report
      2008 Annual Research Report
  • [Presentation] シリコン及びシリコン系ヘテロMOSデバイスの信頼性物理2008

    • Author(s)
      土屋敏章
    • Organizer
      第5回薄膜材料デバイス研究会
    • Place of Presentation
      奈良(招待講演)
    • Related Report
      2008 Annual Research Report
  • [Presentation] SiGeチャネルpMOSFETにおけるホットキャリアストレス中の基板電流変化2008

    • Author(s)
      森祐樹, 櫻庭政夫, 室田淳一, 土屋敏章
    • Organizer
      第10回IEEE広島支部学生シンポジウム(IEEE HISS)
    • Place of Presentation
      広島
    • Related Report
      2008 Annual Research Report
  • [Presentation] Instability of a SiGe/Si-hetero-interface in hetero-channel MOSFETs due to Joule heating2007

    • Author(s)
      T. Tsuchiya, M. Sakuraba, J. Murota
    • Organizer
      3rd International Workshop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Sendai
    • Related Report
      2009 Final Research Report
  • [Presentation] High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth2007

    • Author(s)
      S. Takehiro, M. Sakuraba, T. Tsuchiya, J. Murota
    • Organizer
      5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5)
    • Place of Presentation
      Marseille, France
    • Related Report
      2009 Final Research Report
  • [Presentation] Reliability and instability of a SiGe/Si-hetero-interface in hetero-channel MOSFETs2007

    • Author(s)
      T. Tsuchiya, M. Sakuraba, J. Murota
    • Organizer
      5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5)
    • Place of Presentation
      Marseille, France
    • Related Report
      2009 Final Research Report
  • [Presentation] Reliability and instability of a SiGe/Si-hetero-interface in hetero-channel MOSFETs2007

    • Author(s)
      T. Tsuchiya, M. Sakuraba, and J. Murota
    • Organizer
      Int'l Conf. on Silicon Epitaxy and Heterostructures
    • Place of Presentation
      Marseille (France)
    • Related Report
      2007 Annual Research Report
  • [Presentation] The Instability of the SiGe/Si-Hetero-Interface in Hetero-MOSFETs due to Bias Stress2006

    • Author(s)
      T. Tsuchiya, S. Mishima, M. Sakuraba, J. Murota
    • Organizer
      37th IEEE Semiconductor Interface Specialist Conference (SISC 2006)
    • Place of Presentation
      San Diego, USA
    • Related Report
      2009 Final Research Report
  • [Presentation] Fabrication of Sub-100-nm Gate-Length SiGe-Heterochannel MOSFETs with In-Situ Doped Selectively Epitaxial SiGe Sourcs/Drain2006

    • Author(s)
      S. Takehiro, S. Kawada, M. Sakuraba, T. Tsuchiya, J. Murota
    • Organizer
      2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Sendai, Japan
    • Related Report
      2009 Final Research Report
  • [Presentation] Hot-Carrier-Degradation of Hetero-Interface in SiGe/Si-Hetero-MOSFETs2006

    • Author(s)
      T. Tsuchiya, M. Sakuraba, J. Murota
    • Organizer
      2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Sendai, Japan
    • Related Report
      2009 Final Research Report
  • [Presentation] Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices2006

    • Author(s)
      T. Tsuchiya, M. Sakuraba, J. Murota
    • Organizer
      2006 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD2006)
    • Place of Presentation
      Tohoku Univ., Sendai, Japan
    • Related Report
      2009 Final Research Report
  • [Presentation] The Instability of the SiGe/Si-Hetero-Interface in Hetero-MOSFETs due to Bias Stress2006

    • Author(s)
      T.Tsuchiya, S.Mishima, M.Sakuraba, and J.Murota
    • Organizer
      37th IEEE Semiconductor Interface Specialist Conference (IEEE SISC)
    • Place of Presentation
      San Diego, USA
    • Related Report
      2008 Self-evaluation Report
  • [Remarks]

    • URL

      http://www.ecs.shimane-u.ac.jp/~tsuchiya/

    • Related Report
      2009 Final Research Report
  • [Remarks]

    • URL

      http://www.ecs.shimane-u.ac.jp/~tsuchiya/

    • Related Report
      2009 Annual Research Report
  • [Remarks]

    • URL

      http://www.ecs.shimane-u.ac.jp/~tsuchiya/

    • Related Report
      2008 Self-evaluation Report
  • [Remarks]

    • URL

      http://www.ecs.shimane-u.ac.jp/~tsuchiya/

    • Related Report
      2008 Annual Research Report

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Published: 2006-04-01   Modified: 2018-03-28  

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