Characterization of Si nanoelectronic materials and interface with using synchrotron radiation microprobe

• Project/Area Number: 18063019
• Research Category: Grant-in-Aid for Scientific Research on Priority Areas
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: Japan Synchrotron Radiation Research Institute
• Principal Investigator: KIMURA Shigeru Japan Synchrotron Radiation Research Institute, 利用研究促進部門, 副主席研究員 (50360821)
• Co-Investigator(Kenkyū-buntansha): SAKATA Osami 財団法人高輝度光科学研究センター, 利用研究促進部門, 主幹研究員 (40215629) ; TAJIRI Hiroo 財団法人高輝度光科学研究センター, 利用研究促進部門, 研究員 (70360831) ; IMAI Yasuhiko 財団法人高輝度光科学研究センター, 利用研究促進部門, 研究員 (30416375)
• Project Period (FY): 2006 – 2009
• Project Status: Completed (Fiscal Year 2009)
• Budget Amount: ¥45,600,000 (Direct Cost: ¥45,600,000); Fiscal Year 2009: ¥10,900,000 (Direct Cost: ¥10,900,000); Fiscal Year 2008: ¥10,900,000 (Direct Cost: ¥10,900,000); Fiscal Year 2007: ¥11,900,000 (Direct Cost: ¥11,900,000); Fiscal Year 2006: ¥11,900,000 (Direct Cost: ¥11,900,000)
• Keywords: 結晶工学 / 表面・界面物性 / マイクロX線回折 / シンクロトロン放射光 / X線回折 / 界面物性 / 薄膜 / 歪み / 微小領域 / 薄膜構造 / 金属錯体 / X繰回折

Research Abstract

半導体集積回路の基本素子である金属-絶縁膜-半導体電界効果トランジスタ(MOSFET)の技術開発において、これまでの技術の延命では達成困難な超高集積度、高性能・高機能性を追求し、実現するためには、デバイス中の各パーツの結晶構造や応力分布を解析し、最適な構造にすることが必要不可欠になってきている。そこで、SPring-8の高輝度放射光を用いたマイクロプローブX線技術を発展させ、ナノデバイス材料・界面のナノメーターレベルの微小領域に存在する歪や構造の評価を可能にする高分解能マイクロX線回折システムを開発した。

Research Products

• [Journal Article] High-Angular-Resolution Microbeam X-ray diffraction with CCD Detector (2010)
  • Author(s): Y. Imai, S. Kimura, O. Sakata, A. Sakai
  • Journal Title: AIP Conference Proceedings Vol.1221 Pages: 30-32
  • Peer Reviewed
• [Journal Article] Monolithic Self-Sustaining Nanographene Sheet Grown Using Plasma-Enhanced Chemical Vapor Deposition (2010)
  • Author(s): W. Takeuchi, K. Takeda, M. Hiramatsu, Y. Tokuda, H. Kano, S. Kimura, O. Sakata, H. Tajiri, M. Hori
  • Journal Title: Physica Status Solidi A Vol.207 Pages: 139-143
  • Peer Reviewed
• [Journal Article] Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing (2010)
  • Author(s): T. Kato, Y. Nakamura, J. Kikkawa, A. Sakai, E. Toyoda, K. Izunome, O. Nakatsuka, S. Zaima, Y. Imai, S. Kimura, O. Sakata
  • Journal Title: Thin Solid Films Vol.518
  • Peer Reviewed
• [Journal Article] Monolithic Self-Sustaining Nanographene Sheet Grown Using Plasma-Enhanced Chemical Vapor Deposition (2010)
  • Author(s): W.Takeuchi
  • Journal Title: Physica Status Solidi A 207 Pages: 139-143
  • Peer Reviewed
• [Journal Article] High-Angular-Resolution Microbeam X-ray diffraction with CCD Detector (2010)
  • Author(s): Y.Imai
  • Journal Title: AIP conference proceedings 1221 Pages: 30-33
  • Peer Reviewed
• [Journal Article] In-situ lattice-strain analysis of a ferroelectric thin film under an applied pulse electric field (2010)
  • Author(s): O.Sakata
  • Journal Title: AIP conference proceedings (印刷中)
  • Peer Reviewed
• [Journal Article] Microstructures in directly bonded Si substrates (2009)
  • Author(s): Y. Ohara, T. Ueda, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata, S. Kimura, T. Sakata, H. Mori
  • Journal Title: Solid-State Electronics Vol.53 Pages: 837-840
  • Peer Reviewed
• [Journal Article] Microstructures in directly bonded Si substrates (2009)
  • Author(s): Y.Ohara
  • Journal Title: Solid-State Electronics 53 Pages: 837-840
  • Peer Reviewed
• [Journal Article] Microstructures in directly bonded Si substrates (2009)
  • Author(s): Y. Ohara, T. Ueda, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata, S. Kimura, T. Sakata, H. Mori
  • Journal Title: Solid-State Electronics Vol. 53 Pages: 837-840
  • Peer Reviewed
• [Journal Article] Characterization of strained Si wafers by X-ray diffraction techniques (2008)
  • Author(s): T. Shimura, K. Kawamura, M. Asakawa, H. Watanabe, K. Yasutake, A. Ogura, K. Fukuda, O. Sakata, S. Kimura, H. Edo, S. Iida, M. Umeno
  • Journal Title: Journal of Materials Science: Materials in Electronics Vol.19
  • Peer Reviewed
• [Journal Article] Characterization of strained Si wafers by X-ray diffraction techniques (2008)
  • Author(s): T. Shimura, K. Kawamura, M. Asakawa, H. Watanabe, K. Yasutake, A. Ogura, K. Fukuda, O. Sakata, S. Kimura, H. Edo, S. Iida, and M. Umeno
  • Journal Title: J Mater Sci: Mater Electron Vol. 19
  • Peer Reviewed
• [Journal Article] Depth Distribution of Ge Fraction in Very-Thin-SGOI Layer Using Total-External-Reflection X-ray Diffraction (2008)
  • Author(s): T. Kawamura
  • Journal Title: Transactions of the Materials Research Society of Japan 33 Pages: 599-602
  • Peer Reviewed
• [Journal Article] Characterization of Strained Si Wafers by X-ray Diffraction Techniques (2008)
  • Author(s): Takayoshi Shimura
  • Journal Title: Journal of Materials Science: Materials in Electronics 19(印刷中)
  • Peer Reviewed
• [Journal Article] 放射光マイクロX線回折法による歪緩和SiGeバッファー層の評価 (2007)
  • Author(s): 木村 滋
  • Journal Title: 機能材料 27・3 Pages: 59-65
• [Journal Article] Development of a High-Angular- Resolution Microdiffraction System for Reciprocal Space Map Measurements (2006)
  • Author(s): S. Takeda, S. Kimura, O. Sakata, and A. Sakai
  • Journal Title: Jpn. J. Appl. Phys. 45
  • NAID: 10018340745
  • Peer Reviewed
• [Journal Article] Development of a High-Angular-Resolution Micro-diffraction System for Reciprocal Space Map Measurements (2006)
  • Author(s): Shingo Takeda
  • Journal Title: Japanese Journal of Applied Physics 45・39
• [Presentation] シンクロトロンX線回折によるカーボンナノウォールの結晶構造解析 (2010)
  • Author(s): 近藤博基
  • Organizer: 57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学(平塚市)
  • Year and Date: 2010-03-19
• [Presentation] Distribution of local strain in thick AlN layers grown on a trench-patterned AlN/sapphire template (2010)
  • Author(s): V.Soam
  • Organizer: 57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学(平塚市)
  • Year and Date: 2010-03-17
• [Presentation] Si基板上に選択エピタキシャル成長したGe細線の歪緩和過程 (2010)
  • Author(s): 海老原洪平
  • Organizer: 57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学(平塚市)
  • Year and Date: 2010-03-17
• [Presentation] CCD型検出器を用いた高角度分解能マイクロx線回折計 (2010)
  • Author(s): 今井康彦, 木村滋, 坂田修身, 田尻寛男, 酒井朗, 小瀬村大亮, 小椋厚志
  • Organizer: 第23回日本放射光学会年会・放射光科学合同シンポジウム
  • Place of Presentation: イーグレ姫路
  • Year and Date: 2010-01-08
• [Presentation] シングルバンチ切り出しチョッパーシステムの開発 (2010)
  • Author(s): 大沢仁志
  • Organizer: 第23回日本放射光学会年会・放射光科学合同シンポジウム
  • Place of Presentation: イーグレ姫路(姫路市)
  • Year and Date: 2010-01-08
• [Presentation] CCD型検出器を用いた高角度分解能マイクロX線回折計 (2010)
  • Author(s): 今井康彦
  • Organizer: 第23回日本放射光学会年会・放射光科学合同シンポジウム
  • Place of Presentation: イーグレ姫路(姫路市)
  • Year and Date: 2010-01-08
• [Presentation] Nanometer-scale charac-terization technique using synchrotron radiation microdiffraction (2009)
  • Author(s): S. Kimura
  • Organizer: Japan-Taiwan Joint Symposium on New Functional Materials and Their Nano-Scale Analysis
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2009-11-25
• [Presentation] Nanometer-scale characterization technique using synchrotron radiation microdiffraction (Invited) (2009)
  • Author(s): S.Kimura
  • Organizer: Japan-Taiwan Joint Symposium on New Functional Materials and Their・Nano-Scale Analysis
  • Place of Presentation: 京都大学化学研究所(京都)
  • Year and Date: 2009-11-25
• [Presentation] Micro-Area Strain Analysis in GaN-Based Laser Diodes Using High-Resolution Micro-Beam X-Ray Diffraction (2009)
  • Author(s): T.Yokogawa
  • Organizer: 8th International Conference on Nitride Semiconductors (ICNS 2009)
  • Place of Presentation: International Convention Center (Jeju Island)
  • Year and Date: 2009-10-21
• [Presentation] In-situ lattice-strain analysis of a ferroelectric thin film under an applied pulse electric field (2009)
  • Author(s): O.Sakata
  • Organizer: 10th International Conference on Synchrotron Radiation Instrumentation (SRI09)
  • Place of Presentation: Melbourne Convention and Exhibition Centre (Melbourne)
  • Year and Date: 2009-09-30
• [Presentation] Direct Si Bonding基板の微細構造 (2009)
  • Author(s): 吉川純
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学(富山市)
  • Year and Date: 2009-09-10
• [Presentation] 高輝度放射光を用いたカーボンナノウォールのバンド構造解析 (2009)
  • Author(s): 竹内和歌奈
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学(富山市)
  • Year and Date: 2009-09-08
• [Presentation] 放射光マイクロX線回折を用いたマイクロファセット上InGaN/GaN量子井戸構造の評価 (2009)
  • Author(s): 榊篤史
  • Organizer: 56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学(つくば市)
  • Year and Date: 2009-04-02
• [Presentation] Direct Si Bonding基板の接合界面酸化膜消滅過程における結晶性変化 (2009)
  • Author(s): 加藤哲司
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学, 茨城
  • Year and Date: 2009-03-30
• [Presentation] カーボンナノウォールの構造及び電子状態におけるフッ素不純物の影響 (2009)
  • Author(s): 竹内和歌奈
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学, 茨城
  • Year and Date: 2009-03-30
• [Presentation] SPring-8でのシリコンナノエレクトロニクス研究の現状 (2009)
  • Author(s): 木村滋
  • Organizer: 第55回応用物理学関係連合講演会シンポジウム「シリコン系材料・プロセス評価の最前線-放射光利用による新展開」
  • Place of Presentation: 日本大学船橋キャンパス
  • Year and Date: 2009-03-29
• [Presentation] 高分解能マイクロx線回折装置の現状と応用研究 (2009)
  • Author(s): 今井康彦、木村滋、坂田修身、田尻寛男
  • Organizer: 第22回日本放射光学会年会・放射光科学合同シンポジウム
  • Year and Date: 2009-01-12
• [Presentation] 高分解能マイクロX線回折装置の現状と応用研究 (2009)
  • Author(s): 今井康彦
  • Organizer: 第22回日本放射光学会年会・放射光科学合同シンポジウム
  • Place of Presentation: 東京大学, 東京
  • Year and Date: 2009-01-12
• [Presentation] High-Angular-Resolution Microbeam X-ray diffraction with CCD Detector (2009)
  • Author(s): Y. Imai, S. Kimura, O. Sakata, A. Sakai
  • Organizer: 20th International Congress on X-Ray Optics and Microanalysis
  • Place of Presentation: Karlsruhe, Germany
• [Presentation] Analysis of Local Strain in Ge_<1-X>Sn_x/Ge/Si(001) Heterostructures by X-ray Microdiffraction (2009)
  • Author(s): O.Nakatsuka
  • Organizer: 6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6)
  • Place of Presentation: Ayres Hotel (California)
• [Presentation] High-Angular-Resolution Microbeam X-ray diffraction with CCD Detector (2009)
  • Author(s): Y.Imai
  • Organizer: 20th International Congress on X-Ray Optics and Microanalysis (ICXOM20)
  • Place of Presentation: Congress Center(Karlsruhe)
• [Presentation] Direct Si Bonding基板の微細構造 (2008)
  • Author(s): 大原悠司
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学, 愛知
  • Year and Date: 2008-09-03
• [Presentation] Direct Silicon Bonding(DSB)基板の結晶性の評価 (2008)
  • Author(s): 豊田英二
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学, 愛知
  • Year and Date: 2008-09-03
• [Presentation] 放射光X線マイクロビームによるSiGe酸化濃縮時における歪み緩和過程の局所領域評価 (2008)
  • Author(s): 井上智之
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学, 愛知
  • Year and Date: 2008-09-03
• [Presentation] SPring-8 でのシリコンナノエレクトロニクス研究の現状 (2008)
  • Author(s): 木村 滋
  • Organizer: 第55回応用物理学関係連合講演会
  • Place of Presentation: 日本大学船橋キャンパス,千葉
  • Year and Date: 2008-03-29
• [Presentation] 微小領域選択MOVPEにより作製したSi(111)面上InGaAsの構造解析 (2008)
  • Author(s): 杉山 正和
  • Organizer: 第55回応用物理学関係連合講演会
  • Place of Presentation: 日本大学船橋キャンパス,千葉
  • Year and Date: 2008-03-28
• [Presentation] 人口転位網を内包したSOI-MOSFETの単電子輸送特性 (2008)
  • Author(s): 笠井 勇希
  • Organizer: 第55回応用物理学関係連合講演会
  • Place of Presentation: 日本大学船橋キャンパス,千葉
  • Year and Date: 2008-03-28
• [Presentation] Development of Diffraction Techniques for Dimensionally Controned Thin Films using Synchrotron Radiation (2008)
  • Author(s): 木村 滋
  • Organizer: 第21回日本放射光学会年会放射光科学合同シンポジウム
  • Place of Presentation: 立命館大学びわこ草津キャンパス,滋賀
  • Year and Date: 2008-01-14
• [Presentation] Microstructures in Directly Bonded Si Substrates (2008)
  • Author(s): Y. Ohara
  • Organizer: Fourth International SiGe Technology and Device Meeting
  • Place of Presentation: Hsinchu, Taiwan
• [Presentation] Application of Synchrotron X-ray Diffraction Methods to Gate Stacks of Advanced MOS Devices (2008)
  • Author(s): T. Shimura
  • Organizer: 213th ECS Meeting
  • Place of Presentation: Phoenix, USA
• [Presentation] Characterization of Strain Relaxation Process during Ge Condensation by Synchrotron Microbeam X-ray Diffraction (2008)
  • Author(s): T. Inoue
  • Organizer: 2008 International Conference on SOLID STATE DEVICES AND MATERIALS
  • Place of Presentation: Tsukuba, Japan
• [Presentation] Interface and defect control for group IV channel engineering (2008)
  • Author(s): A. Sakai
  • Organizer: 214th ECS Meeting
  • Place of Presentation: Hawaii, USA
• [Presentation] Strain and interfacial defects in directly bonded Si substrates (2008)
  • Author(s): Y. Ohara
  • Organizer: IUMRS International Conference in Asia 2008
  • Place of Presentation: Nagoya, Japan
• [Presentation] Characterization of Local Strains in Sil-xGex Hetero-mesa Structures on Si(001) Substrates by using X-ray Micro Diffraction (2007)
  • Author(s): Osamu Nakatsuka
  • Organizer: Fifth International Symposium on Control of Semiconductor Interfaces (ISCSI-V)
  • Place of Presentation: 首都大学東京,東京
  • Year and Date: 2007-10-13
• [Presentation] Characterization of Strained Si Wafers by Synchrotron X-ray Microbeam and Topography (2007)
  • Author(s): Takayoshi Shimura
  • Organizer: 12th International Conf. on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XII)
  • Place of Presentation: Berlin, Germany
  • Year and Date: 2007-09-13
• [Book] 「第3版現代界面コロイド化学の基礎」, "放射光を利用した表面x線構造解析", 9章 (2009)
  • Author(s): 木村滋、坂田修身
  • Publisher: 丸善
• [Book] 「機能物質・材料開発と放射光-SPring-8の産業利用-」, "放射光マイクロx線回折法によるひずみ緩和SiGeバッファー層の評価", 第9章 (2008)
  • Author(s): 木村滋、竹田晋吾、酒井朗
  • Publisher: シーエムシー出版
• [Book] 機能物質・材料開発と放射光 -SPring-8の産業利用-, 放射光マイクロX線回折法によるひずみ緩和SiGeバッファー層の評価, 第9章 (2008)
  • Author(s): 木村 滋、竹田晋吾、酒井 朗
  • Publisher: シーエムシー出版, 東京
• [Remarks]
  • URL: http://www.spring8.or.jp/ja/memberdata/04124
• [Remarks] ホームページ
  • URL: http://www.spring8.or.jp/ja/memberdata/04124