Intrinsic Hetero-interface Structures and Their Formation

• Project/Area Number: 18106001
• Research Category: Grant-in-Aid for Scientific Research (S)
• Allocation Type: Single-year Grants
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Nagoya University
• Principal Investigator: TAKEDA Yoshikazu 名古屋大学, 工学研究科, 教授 (20111932)
• Co-Investigator(Kenkyū-buntansha): TABUCHI Masao 名古屋大学, シンクロトロン光研究センター, 特任教授 (90222124) ; UJIHARA Toru 名古屋大学, 工学研究科, 教授 (60312641) ; FUCHI Shingo 名古屋大学, 工学研究科, 助教 (60432241)
• Project Period (FY): 2006 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥116,220,000 (Direct Cost: ¥89,400,000、Indirect Cost: ¥26,820,000); Fiscal Year 2010: ¥15,860,000 (Direct Cost: ¥12,200,000、Indirect Cost: ¥3,660,000); Fiscal Year 2009: ¥15,080,000 (Direct Cost: ¥11,600,000、Indirect Cost: ¥3,480,000); Fiscal Year 2008: ¥15,080,000 (Direct Cost: ¥11,600,000、Indirect Cost: ¥3,480,000); Fiscal Year 2007: ¥30,810,000 (Direct Cost: ¥23,700,000、Indirect Cost: ¥7,110,000); Fiscal Year 2006: ¥39,390,000 (Direct Cost: ¥30,300,000、Indirect Cost: ¥9,090,000)
• Keywords: ヘテロ界面 / 結晶成長 / CTR散乱法 / X線構造解析 / 配列ナノ空間物質 / 金属内包フラーレン

Research Abstract

1) The X-ray CTR scattering measurement system that uses laboratory X-ray sources and that can investigate the buried interfaces was fabricated.
2) The hetero-structure formation was observed in situ by X-ray diffraction, X-ray CTR scattering, and X-ray reflectivity.
3) The hetero-structure and device structure properties were correlated.

Research Products

• [Journal Article] X-ray characterization of GaN and related materials at growth temperatures system design and measurements (2011)
  • Author(s): Y. Takeda, K. Ninoi, G. Ju, H. Kamiya, T. Mizuno, S. Fuchi, and M. Tabuchi
  • Journal Title: Materials Science and Engineering Volume: Vol.24 Pages: 12002-12002
  • DOI: 10.1088/1757-899x/24/1/012002
  • Peer Reviewed
• [Journal Article] Development of X-ray diffractometer for in-situ observation of thin-film crystal growth equipped with focusing monochromator (2011)
  • Author(s): H. Tameoka, T. Kawase, M. Tabuchi, and Y. Takeda
  • Journal Title: Physica Status Solidi(c) Volume: ol. 8, No.2 Issue: 2 Pages: 294-296
  • DOI: 10.1002/pssc.201000508
  • Peer Reviewed
• [Journal Article] Novel system for X-ray CTR scattering measurement on in-situ observation of OMVPE growth of nitride semiconductor heterostructures (2011)
  • Author(s): S.Fuchi, M.Tabuchi, Y.Takeda, 他
  • Journal Title: Journal of Crystal Growth Volume: 318 Pages: 1139-1142
  • Peer Reviewed
• [Journal Article] X-ray characterization at growth temperatures of In_xGa_<1-x>N growth by MOVPE (2011)
  • Author(s): S.Fuchi, M.Tabuchi, Y.Takeda, 他
  • Journal Title: Journal of Crystal Growth Volume: 318 Pages: 1143-1146
  • Peer Reviewed
• [Journal Article] X-ray characterization of GaN and related materials at growth temperatures-system design and measurements (2011)
  • Author(s): Y.Takeda, S.Fuchi, M.Tabuchi, 他
  • Journal Title: IOP Conf.Series : Materials Science and Engineering Volume: 24
  • Peer Reviewed
• [Journal Article] Novel system for X-ray CTR scattering measurement on in-situ observation of OMVPE growth of nitride semiconductor heterostructures (2010)
  • Author(s): K. Ninoi, G. Ju, H. Kamiya, S. Fuchi, M. Tabuchi, and Y. Takeda
  • Journal Title: Journal of Crystal Growth Volume: Vol.318 Issue: 1 Pages: 1139-1142
  • DOI: 10.1016/j.jcrysgro.2010.10.201
  • Peer Reviewed
• [Journal Article] X-ray characterization at growth temperatures of InxGa1-xN growth by MOVPE (2010)
  • Author(s): G. Ju, K. Ninoi, H. Kamiya, S. Fuchi, M. Tabuchi, and Y. Takeda
  • Journal Title: Journal of Crystal Growth Volume: Vol.318 Issue: 1 Pages: 1143-1146
  • DOI: 10.1016/j.jcrysgro.2010.11.051
  • Peer Reviewed
• [Journal Article] Ga and As composition profiles in InP/GaInAs/InP heterostructures-X-ray CTR scattering and cross-sectional STM measurements (2010)
  • Author(s): Y. Takeda, M. Tabuchi, and A. Nakamura
  • Journal Title: Journal of Physics : Condensed Matter Volume: Vol.22 Issue: 47 Pages: 474011-474011
  • DOI: 10.1088/0953-8984/22/47/474011
  • Peer Reviewed
• [Journal Article] Ga and As composition profiles in InP/GaInAs/InP heterostructures-X-ray CTR scattering and cross-sectional STM measurements (2010)
  • Author(s): Y.Takeda, M.Tabuchi, 他
  • Journal Title: Journal of Physics : Condensed Matter Volume: 22
  • Peer Reviewed
• [Journal Article] Measurement of X-ray CTR Signals from GaN/GaInN/GaN at High Temperatures Using Newly Developed Measurement System (2009)
  • Author(s): Y. Takeda, T. Mizuno, H. Kamiya, K. Ninoi, and M. Tabuchi
  • Journal Title: Transactions of the Materials Research Society of Japan Volume: Vol.34, No.4 Pages: 585-588
  • Peer Reviewed
• [Journal Article] Study on Accumulation process of As atoms in InP/GaInAs/InP hetero-structures (2009)
  • Author(s): M. Tabuchi, A. Mori, H. Tameoka, K. Fujii, and Y. Takeda
  • Journal Title: Transactions of the Materials Research Society of Japan Volume: Vol.34, No.4 Pages: 593-595
  • NAID: 130004676258
  • Peer Reviewed
• [Journal Article] Development of New X-ray CTR Scattering Measurement System Using Johansson Monochromator (2009)
  • Author(s): M. Tabuchi, H. Tameoka, T. Kawase, and Y. Takeda
  • Journal Title: Transactions of the Materials Research Society of Japan Volume: Vol.34, No.4 Pages: 589-5918
  • NAID: 130004676257
  • Peer Reviewed
• [Journal Article] Measurement of X-ray CTR Signals from GaN/GaInN/GaN at High Temperatures Using Newly Developed Measurement System (2009)
  • Author(s): Y.Takeda, M.Tabuchi, 他
  • Journal Title: Trans.Mat.Res.Soc.Jpn. 34 Pages: 585-588
  • Peer Reviewed
• [Journal Article] Development of New X-ray CTR Scattering Measurement System Using Johansson Monochromator (2009)
  • Author(s): M.Tabuchi, Y.Takeda, 他
  • Journal Title: Trans.Mat.Res.Soc.Jpn. 34 Pages: 589-591
  • NAID: 130004676257
  • Peer Reviewed
• [Journal Article] Study on Accumulation process of As atoms in InP/GaInAs/InP hetero-structures (2009)
  • Author(s): M.Tabuchi, Y.Takeda, 他
  • Journal Title: Trans.Mat.Res.Soc.Jpn. 34 Pages: 593-595
  • NAID: 130004676258
  • Peer Reviewed
• [Journal Article] Buried Heterostructure of nitride semiconductors revealed by laboratory level X-ray CTR scattering (2008)
  • Author(s): Y. Takeda, Y. Maeda, T. Mizuno, and M. Tabuchi
  • Journal Title: Transactions of the Materials Research Society of Japan Volume: Vol.33 Pages: 547-550
  • Peer Reviewed
• [Journal Article] X-ray CTR scattering measurements using conventional X-ray source to study semiconductor hetero-interfaces (2008)
  • Author(s): Y. Maeda, T. Mizuno, A. Mori, M. Tabuchi, and Y. Takeda
  • Journal Title: Transactions of the Materials Research Society of Japan Volume: Vol.33 Pages: 591-594
  • Peer Reviewed
• [Journal Article] Buried Heterostructure of nitride semi-conductors revealed by laboratory level X-ray CTR scattering (2008)
  • Author(s): Y. Takeda, Y. Maeda, T. Mizuno and M. Tabuchi
  • Journal Title: Trans. Mat. Res. Soc. Jpn. Vol.33 Pages: 547-550
  • Peer Reviewed
• [Journal Article] X-ray CTR scattering measurements using conventional X-ray source to study semi- conductor hetero-interfaces (2008)
  • Author(s): Y. Maeda, T. Mizuno, A. Mori, M. Tabuchi, and Y. Takeda
  • Journal Title: Trans. Mat. Res. Soc. Jpn. Vol. 33 Pages: 591-594
  • Peer Reviewed
• [Journal Article] Buried Heterostructure of nitride semiconductors revealed by laboratory level X-ray CTR scattering (2008)
  • Author(s): Y. Takeda, Y. Maeda, T. Mizuno. M. Tabuchi
  • Journal Title: Trans. Mat. Res. Soc. Jpn. 33 Pages: 547-550
  • Peer Reviewed
• [Journal Article] X-ray CTR scatterittg measurements using conventional x-ray source to study semiconductor hetero-interfaces (2008)
  • Author(s): Y. Maeda, T. Mizuno, A. Mori, M. Tabuchi, Y. Takeda
  • Journal Title: Trans. Mat. Res. Soc. Jpn. 33 Pages: 591-594
  • Peer Reviewed
• [Journal Article] Analysis of In distribution in GaInN/GaN multilayer structures by X-ray CTR scattering (2007)
  • Author(s): M. Tabuchi, Y. Ohtake, and Y. Takeda
  • Journal Title: Transactions of the Materials Research Society of Japan Volume: Vol.32, No.9 Pages: 219-222
  • NAID: 130007922817
  • Peer Reviewed
• [Journal Article] Study on buried interfaces in semiconductor heterostructures by X-ray reflectivity (2007)
  • Author(s): Y. Takeda and M. Tabuchi
  • Journal Title: Transactions of the Materials Research Society of Japan Volume: Vol.32, No.1 Pages: 187-192
  • NAID: 130007922814
  • Peer Reviewed
• [Journal Article] The importance to reveal buried interfaces in the semiconductor heterostructure devices (2007)
  • Author(s): Y. Takeda and M. Tabuchi
  • Journal Title: Journal of Physics : Conference Series Volume: Vol.83 Pages: 12002-12002
  • DOI: 10.1088/1742-6596/83/1/012002
  • Peer Reviewed
• [Journal Article] X-ray CTR scattering measurement to investigate the formation process of InP/GaInAs interface (2007)
  • Author(s): M. Tabuchi, A. Mori, Y. Ohtake, and Y. Takeda
  • Journal Title: Journal of Physics : Conference Series Volume: Vol.83 Pages: 12031-12031
  • DOI: 10.1088/1742-6596/83/1/012031
  • Peer Reviewed
• [Journal Article] Atomic scale analysis of MOVPE grown heterostructures by X-ray crystal truncation rod scattering measurement (2007)
  • Author(s): M. Tabuchi and Y. Takeda
  • Journal Title: J. Cryst. Growth Vol. 298 Pages: 12-17
  • Peer Reviewed
• [Journal Article] Analysis of In distribution in GaInN/GaN multilayer structures by X-ray CTR scattering (2007)
  • Author(s): M. Tabuchi, Y. Ohtake and Y. Takeda
  • Journal Title: Trans. Mat. Res. Soc. Jpn. Vol.32 No.9 Pages: 219-222
  • NAID: 130007922817
  • Peer Reviewed
• [Journal Article] Study on buried interfaces in semiconductor heterostructures by X-ray reflectivity (invited) (2007)
  • Author(s): Y. Takeda and M. Tabuchi
  • Journal Title: Trans. Mat. Res. Soc. Jpn. Vol. 32, No. 1 Pages: 187-192
  • Peer Reviewed
• [Journal Article] The importance to reveal buried interfaces in the semiconductor heterostructure devices (invited) (2007)
  • Author(s): Y. Takeda, M. Tabuchi and J. Phys.
  • Journal Title: Conference Series Vol.83
• [Journal Article] The importance to reveal buried interfaces in the semicondutor heterostructure devices (2007)
  • Author(s): Y. Takeda and M. Tabuchi
  • Journal Title: J. Phys. Conference Series 83
  • Peer Reviewed
• [Journal Article] X-ray CTR scattering measurement to investigate the formation process of InP/GaInAs interface (2007)
  • Author(s): M. Tabuchi, A. Mori, Y. Ohtake, and Y. Takeda
  • Journal Title: J. Phys. Conference Series 83
  • Peer Reviewed
• [Journal Article] Desorption time of As adsorbed on GaInAs surface analyzed by X-ray CTR scattering (2007)
  • Author(s): A. Mori, Y. Ohtake, T. Ujihara, M. Tabuchi, and Y. Takeda
  • Journal Title: Indium Phosphide and Related Materials 2007 IPRM2007 Pages: 315-318
  • Peer Reviewed
• [Journal Article] GaNおよび関運材料のX線非破壊その場評価システムの開発 (2007)
  • Author(s): Y. Takeda, Y. Maeda, T. Mizuno, and M. Tabuchi
  • Journal Title: 第7回赤崎記念研究センターシンポジウム資料 7 Pages: 19-23
• [Journal Article] Study on Buried Interfaces in Semiconductor Heterostructures by X-ray Reflectivity (2007)
  • Author(s): Y.Takeda, M.Tabuchi
  • Journal Title: Transactions of the Materials Research Society of Japan 32巻・1号 Pages: 187-192
  • NAID: 130007922814
• [Journal Article] Analysis of In Distribution in GaInN/GaN Multilayer Structures by X-ray CTR Scattering (2007)
  • Author(s): M.Tabuchi, Y.Ohtake, Y.Takeda
  • Journal Title: Transactions of the Materials Research Society of Japan 32巻・1号 Pages: 219-222
  • NAID: 130007922817
• [Journal Article] Formation of Patterned GaInAs/GaAs Hetero-structures Using Amorphous Arsenic Mask (2007)
  • Author(s): Y.Noritake, T.Yamada, M.Tabuchi, Y.Takeda
  • Journal Title: J. Cryst. Growth 301-302巻 Pages: 876-879
• [Journal Article] Measurement of Compositional Grading at InP/GaInAs/InP Hetero-interfaces by X-ray CTR Scattering Using Synchrotron Radiation (2007)
  • Author(s): Y.Ohtake, T.Eguchi, S.Miyake, W.S.Lee, M.Tabuchi, Y.Takeda
  • Journal Title: AIP Conference Proceedings 879巻 Pages: 1619-1622
• [Journal Article] Atomic Scale Analysis of MOVPE Grown Heterostructures by X-ray Crystal Truncation Rod Scattering Measurement (2007)
  • Author(s): M.Tabuchi, Y.Takeda
  • Journal Title: J. Cryst. Growth 298巻 Pages: 12-17
• [Journal Article] Investigation of Hetero-interfaces Formed in InP/GaInAs/InP Structures with Different Growth Rates (2006)
  • Author(s): Y.Ohtake, T.Eguchi, S.Miyake, W.S.Lee, M.Tabuchi, Y.Takeda
  • Journal Title: Indium Phosphide and Related Materials 2006 IPRM2006 Pages: 290-293
• [Presentation] In situ X-ray measurements of MOVPE growth of InxGa1-xN single quantum well (2012)
  • Author(s): 渕、田渕、竹田, 他
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学(東京都)
• [Presentation] Development of X-ray diffractometer for X-ray CTR measurement using Johansson monochromator and quick measurements (2011)
  • Author(s): M.Tabuchi, Y.Takeda, 他
  • Organizer: 11th Akasaki Research Center Symposium
  • Place of Presentation: 名古屋大学(愛知県)(招待講演)
  • Year and Date: 2011-12-09
• [Presentation] 半導体OMVPE成長過程のその場X線反射率測定の試み (2010)
  • Author(s): 渕、田渕、竹田, 他
  • Organizer: 応用物理学会結晶工学分科会主催2010年・年末講演会
  • Place of Presentation: 学習院大学(東京都)
  • Year and Date: 2010-12-17
• [Presentation] Growth temperature and room temperature characterization of nitride semiconductors by MOVPE reactor installed in the X-ray CTR measurements system (2010)
  • Author(s): Y. Takeda, K. Ninoi, G. X. Ju, S. Fuchi, and M. Tabuchi
  • Organizer: 10th Akasaki Research Center Symposium
  • Place of Presentation: Hotel Rubura Ohzan, Nagoya, Japan
  • Year and Date: 2010-11-26
• [Presentation] Growth temperature and room temperature characterization of nitride semiconductors by MOVPE reactor installed in the X-ray CTR measurements system (2010)
  • Author(s): Y.Takeda, S.Fuchi, M.Tabuchi, 他
  • Organizer: 10th Akasaki Research Center Symposium
  • Place of Presentation: Nagoya (Japan)(招待講演)
  • Year and Date: 2010-11-26
• [Presentation] Growth and characterization of nitride semiconductors by MOVPE reactor installed in the X-ray CTR measurements system (2010)
  • Author(s): Y. Takeda, H. Kamiya, K. Ninoi, G. X. Ju, S. Fuchi, and M. Tabuchi
  • Organizer: 9th Akasaki Research Center Symposium
  • Place of Presentation: Hotel Rubura Ohzan, Nagoya, Japan
  • Year and Date: 2010-03-12
• [Presentation] Growth and characterization of nitride semiconductors by MOVPE reactor installed in the X-ray CTR measurements system (2010)
  • Author(s): 竹田美和, 田渕雅夫, 他
  • Organizer: 9^<th> Akasaki Research Center Symposium
  • Place of Presentation: ルブラ王山、名古屋
  • Year and Date: 2010-03-12
• [Presentation] X-Ray Characterization of Semiconductor Heterostructures at the Atomic-Level (2010)
  • Author(s): Y. Takeda and M. Tabuchi
  • Organizer: 2010 International Symposium on Crystal Growth
  • Place of Presentation: Hanyang University, Seoul, Korea
• [Presentation] X-ray CTR scattering measurement at growth temperature of InxGa1-xN grown by MOVPE (2010)
  • Author(s): G. Ju, K. Ninoi, H. Kamiya, S. Fuchi, M. Tabuchi, and Y. Takeda
  • Organizer: The 16th International Conference on Crystal Growth(ICCG-16)
  • Place of Presentation: Beijing, China
• [Presentation] New X-ray CTR scattering measurement system using conventional X-ray source for in-situ observation of OMVPE growth of nitride semiconductor heterostructures (2010)
  • Author(s): K. Ninoi, G. Ju, H. Kamiya, S. Fuchi, M. Tabuchi, and Y. Takeda
  • Organizer: The 16th International Conference on Crystal Growth(ICCG-16)
  • Place of Presentation: Beijing, China
• [Presentation] Development of X-ray diffractometer for in-situ observation of thin-film crystal growth equipped with focusing monochromator (2010)
  • Author(s): H. Tameoka, T. Kawase, M. Tabuchi, and Y. Takeda
  • Organizer: The 37th International Symposium Compound Semiconductors(ISCS2010)
  • Place of Presentation: FrC3-7, Takamatsu Symbol Tower, Kagawa, Japan
• [Presentation] In_xGa_<1-x>N grown by MOVPE installed in the CTR scattering measurement system (2010)
  • Author(s): 渕、田渕、竹田, 他
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学(長崎県)
• [Presentation] 窒化物半導体のOMVPE成長過程その場測定用実験室系X線CTR散乱測定装置の開発 (2010)
  • Author(s): 渕、田渕、竹田, 他
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学(長崎県)
• [Presentation] X-ray characterization of semiconductor heterostructures at the atomic-level (2010)
  • Author(s): Y.Takeda, M.Tabuchi
  • Organizer: 2010 International Symposium on Crystal Growth
  • Place of Presentation: Seoul (Korea)(招待講演)
• [Presentation] 半導体成長環境下におけるその場X線反射率測定 (2010)
  • Author(s): 渕、田渕、竹田, 他
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学(山形県)
• [Presentation] Development of X-ray diffractometer for quick X-ray CTR scattering observation of thin-film crystal growth equipped with focusing monochromator (2010)
  • Author(s): Y.Takeda, S.Fuchi, M.Tabuchi, 他
  • Organizer: The 16th International Conference on Crystal Growth (ICCG-16)
  • Place of Presentation: Beijing (China)(招待講演)
• [Presentation] X-ray CTR scattering measurement at growth temperature of In_xGa_<1-x>N grown by MOVPE (2010)
  • Author(s): S.Fuchi, M.Tabuchi, Y.Takeda, 他
  • Organizer: The 16th International Conference on Crystal Growth (ICCG-16)
  • Place of Presentation: Beijing (China)
• [Presentation] New X-ray CTR scattering measurement system using conventional X-ray source for in-situ observation of OMVPE growth of nitride semiconductor heterostructures (2010)
  • Author(s): S.Fuchi, M.Tabuchi, Y.Takeda, 他
  • Organizer: The 16th International Conference on Crystal Growth (ICCG-16)
  • Place of Presentation: Beijing (China)
• [Presentation] Development of X-ray diffractometer for in-situ observation of thin-film crystal growth equipped with focusing monochromator (2010)
  • Author(s): Y.Takeda, M.Tabuchi, 他
  • Organizer: The 37th International Symposium Compound Semi-conductors (ISCS2010)
  • Place of Presentation: Kagawa (Japan)
• [Presentation] 結晶成長その場観察を目指した新しいX線CTR散乱測定装置の開発 (2009)
  • Author(s): 田渕雅夫, 竹田美和, 他
  • Organizer: 応用物理学会 結晶工学分科会
  • Place of Presentation: 学習院大学
  • Year and Date: 2009-12-11
• [Presentation] 半導体のOMVPE成長のその場測定用実験室系X線CTR散乱測定装置の開発 (2009)
  • Author(s): 田渕雅夫, 竹田美和, 他
  • Organizer: 応用物理学会 結晶工学分科会
  • Place of Presentation: 学習院大学
  • Year and Date: 2009-12-11
• [Presentation] 結晶成長のその場観察を目指した新しいX線CTR散乱装置の開発 (2009)
  • Author(s): 田渕雅夫, 竹田美和, 他
  • Organizer: 第39回 結晶成長学会国内会議
  • Place of Presentation: 名古屋大学
  • Year and Date: 2009-11-14
• [Presentation] 実験室系X線CTR散乱測定装置におけるソーラスリットの効果 (2009)
  • Author(s): 田渕雅夫, 竹田美和, 他
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学
  • Year and Date: 2009-09-10
• [Presentation] InP/GaInAs/IhPヘテロ構造におけるAs原子蓄積過程の検討 (2009)
  • Author(s): 田渕雅夫, 竹田美和, 他
  • Organizer: 埋もれた界面のX線・中性子回折に関するワークショップ
  • Place of Presentation: 筑波大学東京キャンパス
  • Year and Date: 2009-07-13
• [Presentation] ヨハンソン分光結晶を用いたX線CTR散乱測定装置の開発 (2009)
  • Author(s): 田渕雅夫, 竹田美和, 他
  • Organizer: 埋もれた界面のX線・中性子回折に関するワークショップ
  • Place of Presentation: 筑波大学東京キャンパス
  • Year and Date: 2009-07-01
• [Presentation] Influence of Growth Rate and Temperature on InP/GaInAs Interface Structure Analyzed by X-ray CTR Scattering Measurement (2009)
  • Author(s): 田渕雅夫, 竹田美和, 他
  • Organizer: 2009 Indium Posphide and Related Materials
  • Place of Presentation: Newport Beach, CA, 米
  • Year and Date: 2009-05-11
• [Presentation] Influence of growth rate and temperature on InP/GaInAs interface structure analyzed by X-ray CTR scattering measurement (2009)
  • Author(s): H. Tameoka, A. Mori, M. Tabuchi, and Y. Takeda
  • Organizer: 2009 Indium Phosphide and Related Materials(IPRM2009)
  • Place of Presentation: MA2. 4, Newport Beach, CA, USA
• [Presentation] Influence of growth rate and temperature on InP/GaInAs interface structure analyzed by X-ray CTR scattering measurement (2009)
  • Author(s): H. Tameoka, A. Mori, M. Tabuchi and Y. Takeda
  • Organizer: 2009 Indium Phosphide and Related Materials (IPRM2009)
  • Place of Presentation: MA2.4, Newport Beach, CA, USA
• [Presentation] 半導体における埋もれた界面の重要性とその測定・解析法(invited) (2009)
  • Author(s): 竹田美和, 田渕雅夫
  • Organizer: 第56回応用物理学会関係連合講演会, 「X線・中性子による埋もれた界面研究の最前線」
  • Place of Presentation: 筑波大学(31a-D-3)
• [Presentation] 半導体における埋もれた界面の重要性とその測定・解析法 (2009)
  • Author(s): 竹田美和, 田渕雅夫
  • Organizer: 第56回応用物理学会関係連合講演会
  • Place of Presentation: 筑波大学
• [Presentation] ヨハンソン分光結晶を用いた実験室系X線CTR散乱測定装置の開発 (2009)
  • Author(s): 為岡博, 川瀬達也, 田渕雅夫, 竹田美和
  • Organizer: 第56回応用物理学会関係連合講演会
  • Place of Presentation: 筑波大学
• [Presentation] InP/GalnAs/InPヘテロ界面におけるAs原子吸着効果の温度依存性のX線CTR散乱法による解析 (2009)
  • Author(s): 森晶子, 為岡博, 藤井克典, 川瀬達也, 田渕雅夫, 竹田美和
  • Organizer: 第22回日本放射光学会年会・放射光科学合同シンポジウム
  • Place of Presentation: 東京大学本郷キャンパス
• [Presentation] 成長温度と成長速度がInP/GalnAs界面に及ぼす影響のX線CTR散乱法による解析 (2008)
  • Author(s): 為岡博, 森晶子, 田渕雅夫, 竹田美和
  • Organizer: 応用物理学会結晶工学分科会年末講演会
  • Place of Presentation: 学習院大学
  • Year and Date: 2008-12-11
• [Presentation] InP/GalnAs界面におけるAs原子吸着効果の温度依存性-X線CTR散乱法による解析- (2008)
  • Author(s): 森晶子, 為岡博, 川瀬達也, 藤井克憲, 田渕雅夫, 竹田美和
  • Organizer: 応用物理学会結晶工学分科会年末講演会
  • Place of Presentation: 学習院大学
  • Year and Date: 2008-12-11
• [Presentation] MOVPE reactor and X-ray CTR measurement system for GaN and related compounds (2008)
  • Author(s): Y. Takeda, T. Mizuno, H. Kamiya, and M. Tabuchi
  • Organizer: 8th Akasaki Research Center Symposium
  • Place of Presentation: Nagoya, Japan
  • Year and Date: 2008-11-20
• [Presentation] MOVPE reactor and X-ray CTR measurement system for GaN and related compounds (invited) (2008)
  • Author(s): Y. Takeda, T. Mizuno, H. Kamiya and M. Tabuchi
  • Organizer: 8th Akasaki Research Center Symp.
  • Place of Presentation: Nagoya, Japan
  • Year and Date: 2008-11-20
• [Presentation] MOVPE reactor and X-ray CTR measurement system for GaN and related compounds (2008)
  • Author(s): Y. Takeda, T. Mizuno, H. Kamiya, M. Tabuchi
  • Organizer: 8th Akasaki Research Center Symp.
  • Place of Presentation: Nagoya, Japan
  • Year and Date: 2008-11-20
• [Presentation] X-ray CTR scattering analysis of As accumulation on GaInAs surface and growth temperature Effects (2008)
  • Author(s): A. Mori, H. Tameoka, M. Tabuchi, and Y. Takeda
  • Organizer: 2008 Indium Phosphide and Related Materials 2008(IPRM2008)
  • Place of Presentation: WeP6, Versailles, France
• [Presentation] OMVPE成長の半導体ヘテロ界面その場観察に向けた実験室系X線CTR散乱測定(EMS賞受賞) (2008)
  • Author(s): 水野哲也, 前田義紀, 神谷肇, 森晶子, 田渕雅夫, 竹田美和
  • Organizer: 第27回電子材料シンポジウム(EMS27)
  • Place of Presentation: ラフォーレ修善寺(K-15)
• [Presentation] 成長温度と成長遠度がInP/GalnAs界面に及ぼす影響のX線CTR散乱法による解析 (2008)
  • Author(s): 為岡博, 森晶子, 田渕雅夫, 竹田美和
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学
• [Presentation] OMVPE成長の半導体ヘテロ界面その場観察に向けた実験室系X線CTR散乱測定 (2008)
  • Author(s): 水野哲也, 前田義紀, 神谷肇, 森晶子, 田渕雅夫, 竹田美和
  • Organizer: 第27回電子材料シンポジウム(EMS27)
  • Place of Presentation: ラフォーレ修善寺
• [Presentation] X-ray CTR scattering analysis of As accumulation on GaInAs surface and growth temperature effects (2008)
  • Author(s): A. Mori, H. Tameoka, M. Tabuchi, Y. Takeda
  • Organizer: 2008 Indium Phosphide and Related Materials(IPRM2008)
  • Place of Presentation: Versailles, France
• [Presentation] Development of in-situ X-ray non-invasive characterization system on GaN and related compounds (2007)
  • Author(s): Y. Takeda, Y. Maeda, T. Mizuno, and M. Tabuchi
  • Organizer: 7th Akasaki Research Center Symposium-To the New Horizon of the Nitride Research-
  • Place of Presentation: Nagoya, Japan
  • Year and Date: 2007-10-19
• [Presentation] Development of in-situ X-ray non-invasive characterization system on GaN and related compounds (invited) (2007)
  • Author(s): Y. Takeda, Y. Maeda, T. Mizuno and M. Tabuchi
  • Organizer: 7th Akasaki Research Center Symp.
  • Place of Presentation: Nagoya, Japan
  • Year and Date: 2007-10-09
• [Presentation] Desorption time of As adsorbed on GaInAs surface analyzed by X-ray CTR scattering (2007)
  • Author(s): A. Mori, Y. Ohtake, T. Ujihara, M. Tabuchi, and Y. Takeda
  • Organizer: 2007 Indium Phosphide and Related Materials 2007(IPRM2007)
  • Place of Presentation: PB29, Kunibiki Messe, Matsue, Japan
• [Presentation] Mechanisms of As distribution in InP on GaInAs layer grown by OMVPE (2007)
  • Author(s): M. Tabuchi, Y. Ohtake, A. Mori, and Y. Takeda
  • Organizer: The 15th International Conference on Crystal Growth(ICCG15)
  • Place of Presentation: o06, Salt Lake City, Utah, USA
• [Presentation] 埋もれた界面の制御について (2007)
  • Author(s): 竹田美和
  • Organizer: 埋もれた界面のX線・中性子解析に関するワークショップ2007
  • Place of Presentation: 東北大学金属材料研究所
• [Presentation] 実験室系のX線源を用いたX線CTR散乱測定による半導体へテロ界面の評価 (2007)
  • Author(s): 前田義紀, 水野哲也, 森晶子, 田渕雅夫, 竹田美和
  • Organizer: 第37回結晶成長国内会議(NCCG-37)
  • Place of Presentation: 北海道大学(06aC09)
• [Presentation] 窒化物半導体の埋もれたヘテロ構造(invited) (2007)
  • Author(s): 竹田美和, 田渕雅夫
  • Organizer: 第18回日本M R S 学術シンポジウム
  • Place of Presentation: 日本大学理工学部駿河台校舎(G-06-I)
• [Presentation] 実験室系のX線回折装置による半導体へテロ界面のX線CTR散乱測定 (2007)
  • Author(s): 前田義紀, 水野哲也, 森晶子, 竹田美和, 田渕雅夫
  • Organizer: 第18回日本MRS学術シンポジウム
  • Place of Presentation: 日本大学理工学部駿河台校舎(G-P04-M)
• [Presentation] Desorption time of As adsorbed on GaInAs surface analyzed by X-ray CTR scattering (2007)
  • Author(s): A. Mori, Y. Ohtake, T. Ujihara, M. Tabuchi, and Y. Takeda
  • Organizer: The 19th International Conference on Indium Phosphide and Related Materials, PB29
  • Place of Presentation: Matsue, Japann
• [Presentation] Mechanisms of As distribution in InP on GaInAs layer grown by OMVPE (2007)
  • Author(s): M. Tabuchi, Y. Ohtake, A. Mori, and Y. Takeda
  • Organizer: The 15th International Conference on Crystal Growth, o06
  • Place of Presentation: Salt Lake City, USA
• [Presentation] X-ray CTR scattering measurements to reveal the effect of the growth interruption processes on the InP/InGaAs interface structures (2007)
  • Author(s): M. Tabuchi, Y. Ohtake, A. Mori, and Y. Takeda
  • Organizer: The 15th International Conference on CrystalGrowth, o07
  • Place of Presentation: Salt Lake City, USA
• [Presentation] 埋もれた界面の制御について (2007)
  • Author(s): 竹田美和
  • Organizer: 埋もれた界面のX線・中性子回折に関するワークショップ2007
  • Place of Presentation: 東北大学
• [Presentation] X線CTR散乱法で解析するInP/GaInAs界面形成過程 (2007)
  • Author(s): 田渕雅夫
  • Organizer: 埋もれた界面のX線・中性子回折に関するワークショップ2007
  • Place of Presentation: 東北大学
• [Presentation] InP/GaInAs界面における原子の分布広がり発生メカニズム (2007)
  • Author(s): 森晶子、大竹悠介、田渕雅夫、竹田美和
  • Organizer: 第68回応用物理学会学術講演会8a-H-3
  • Place of Presentation: 北海道工大
• [Presentation] 実験室系のX線源を用いたX線CTR散乱測定による半導体ヘテロ界面の評価 (2007)
  • Author(s): 前田義紀, 水野哲也, 森晶子, 田渕雅夫, 竹田美和
  • Organizer: 第37回結晶成長国内会議(NCCG-37), 06aC09
  • Place of Presentation: 北海道大学
• [Presentation] 窒化物半導体の埋もれたヘテロ構造 (2007)
  • Author(s): 竹田美和、田渕雅夫
  • Organizer: 第18回日本MRS学術シンポジウム、G-06-I(Invited)
  • Place of Presentation: 日本大学理工学部駿河台校舎
• [Presentation] 実験室系のX線回折装置による半導体ヘテロ界面のX線CTR散乱測定 (2007)
  • Author(s): 前田義紀、水野哲也、森晶子、竹田美和、田渕雅夫
  • Organizer: 第18回日本MRS学術シンポジウム、G-P04-M
  • Place of Presentation: 日本大学理工学部駿河台校舎
• [Presentation] 埋め込まれたInAsナノドットのGI-SAXSを用いた構造解析 (2007)
  • Author(s): 久野啓志、大高幹雄、中野聡志、奥田浩司、落合庄治郎、則竹陽介、鈴木裕史、竹田美和、田渕雅夫
  • Organizer: 第18回日本MRS学術シンポジウム、G-P05-M
  • Place of Presentation: 日本大学理工学部駿河台校舎
• [Presentation] 異なる成長温度でのInP/Ga_<0.47>In_<0.53>As界面As原子分布に対する成長中断の影響 (2007)
  • Author(s): 森晶子、為岡博、田渕雅夫、竹田美和
  • Organizer: 第55回応用物理学会関係連合講演会、29aZT-5
  • Place of Presentation: 日本大学理工学部船橋キャンパス
• [Presentation] Analysis of In distribution in GaInN/GaN multilayer structures by X-ray CTR scattering (invited) (2006)
  • Author(s): M. Tabuchi and Y. Takeda
  • Organizer: 6th Akasaki Research Center Symp.
  • Place of Presentation: Nagoya, Japan
  • Year and Date: 2006-12-05
• [Presentation] X線CTR散乱法によるGaInN/GaN量子井戸構造中のIn組成分布の解析 (2006)
  • Author(s): 大竹悠介, 田渕雅夫, 竹見政義, 岡川広明, 竹田美和
  • Organizer: 第67回応用物理学会学術講演会
  • Place of Presentation: 立命館大学(30p-C-9)
• [Presentation] X 線C T R 散乱測定によるGaInN/GaN多層構造中のIn原子分布の解析 (2006)
  • Author(s): 田渕雅夫, 大竹悠介, 竹田美和
  • Organizer: 第17回日本M R S 学術シンポジウム
  • Place of Presentation: 日本大学理工学部駿河台校舎(G-P02)
• [Presentation] X線反射率による半導体ヘテロ構造の埋もれた界面の研究(invited)
  • Author(s): 竹田美和
  • Organizer: 第17回日本M R S 学術シンポジウム
  • Place of Presentation: (G-02P02)
• [Book] 「回折結晶学の基礎」結晶工学の基礎、第6章 (2010)
  • Author(s): 田渕雅夫
  • Total Pages: 16
  • Publisher: 応用物理学会
• [Remarks]
  • URL: http://mars.numse.nagoya-u.ac.jp/f6/indexf6j.html
• [Remarks]
  • URL: http://mercury.numse.nagoya-u.ac.jp/f6/indexf6j.html
• [Remarks]
  • URL: http://mars.numse.nagoya-u.ac.jp/f6/indexf6j.html
• [Remarks]
  • URL: http://mars.numse.nagoya-u.ac.jp/f6/indexf6j.html