Study on SiC Super-Junction Power MOSFETs Utilizing Ion Implantation and Embedded Epitaxial Growth

• Project/Area Number: 18206032
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Kyoto University
• Principal Investigator: TSUNENOBU Kimoto Kyoto University, 大学院・工学研究科, 教授 (80225078)
• Co-Investigator(Kenkyū-buntansha): JUN Suda , 京都大学・工学研究科, 准教授 (00293887)
• Project Period (FY): 2006 – 2008
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥48,230,000 (Direct Cost: ¥37,100,000、Indirect Cost: ¥11,130,000); Fiscal Year 2008: ¥11,700,000 (Direct Cost: ¥9,000,000、Indirect Cost: ¥2,700,000); Fiscal Year 2007: ¥15,210,000 (Direct Cost: ¥11,700,000、Indirect Cost: ¥3,510,000); Fiscal Year 2006: ¥21,320,000 (Direct Cost: ¥16,400,000、Indirect Cost: ¥4,920,000)
• Keywords: シリコンカーバイド / パワーデバイス / 超接合 / MOSFET / イオン注入 / 埋め込み成長

Research Abstract

次世代の高性能パワーデバイスとして期待されるSiCパワーMOSFETの特性を極限まで向上させるため、多層pn接合の多次元空乏化を利用する超接合構造に着目した。イオン注入や埋め込み成長により形成したpn接合特性の解析、MOS界面特性の向上、高精度デバイスシミュレーションによる構造設計や微細加工技術を集約して、耐圧1580V、オン抵抗40mΩcm2という優れた性能を達成した。この特性はSiデバイスの理論限界より20倍優れている。

Research Products

• [Journal Article] Improved performance of 4H-SiC double reduced Surface field metal-oxide- semiconductor field-effect transistors by increasing RESURF doses (2008)
  • Author(s): M. Noborio, J. Suda, and T. Kimoto
  • Journal Title: Appl. Phys. Express 1 Pages: 1014031-3
  • NAID: 10025082727
  • Peer Reviewed
• [Journal Article] Direct determination of burgers vector sense and magnitude of elementary dislocations by synchrotron white x-ray topography (2008)
  • Author(s): D. Nakamura, S. Yamaguchi, Y. Hirose, T. Tani, K. Takatori, K. Kajiwara, and T. Kimoto
  • Journal Title: J. Appl. Phys 103 Pages: 0135101-7
  • NAID: 120001462525
  • Peer Reviewed
• [Journal Article] Hydrogen implantation and annealing-induced exfoliation process in SiC wafers with various crystal orientations (2008)
  • Author(s): K. Senga, T. Kimoto, and J. Suda
  • Journal Title: Jpn. J. Appl. Phys 47 Pages: 5352-5354
  • NAID: 210000065207
  • Peer Reviewed
• [Journal Article] Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation (2008)
  • Author(s): T. Kimoto, K. Danno, and J. Suda
  • Journal Title: Phys. Stat. Sol.(b) 245 Pages: 1327-1336
  • Peer Reviewed
• [Journal Article] 4H-SiC MIS Capacitors and MISFETs with deposited SiNx/SiO2 stack-gate structures (2008)
  • Author(s): M. Noborio, J. Suda, and T. Kimoto
  • Journal Title: IEEE Transaction on electron Devices 55 Pages: 2054-2060
  • NAID: 120001462509
  • Peer Reviewed
• [Journal Article] Simulation and experimental study on the junction termination structure for high-voltage 4H-SiC PiN diodes (2008)
  • Author(s): T. Hiyoshi, T. Hori, J. Suda, and T. Kimoto
  • Journal Title: IEEE Transaction on electron Devices 55 Pages: 1841-1846
  • NAID: 120001462508
  • Peer Reviewed
• [Journal Article] Improvea perrormance 01 4h-STC double reduced Suriace field metal-oxide-semiconductor field-effect transistors by increasing RESURF doses (2008)
  • Author(s): M. Noborio, J. Suda, T. Kiraoto
  • Journal Title: Appl. Phys. Express. 1
  • Peer Reviewed
• [Journal Article] 4H-SiC MIS Capacitors and MISFETs with deposited SiNx/Si02 stack-gate structures (2008)
  • Author(s): M. Noborio, J. Suda, T. Kimoto
  • Journal Title: IEEE Transaction on electron Devices. 55 Pages: 2054-2060
  • Peer Reviewed
• [Journal Article] Simulation and experimental study on the junction termination structure for high-voltage 4H-SiC PiN diodes (2008)
  • Author(s): T. Hiyoshi, T. Hori, J Suda, T. Kimoto
  • Journal Title: IEEE Transaction on electron Devices. 55 Pages: 1841-1846
  • NAID: 120001462508
  • Peer Reviewed
• [Journal Article] Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation (2007)
  • Author(s): K. Danno, D. Nakamura and T. Kimoto
  • Journal Title: Appl. Phys. Lett 90 Pages: 2021091-3
  • Peer Reviewed
• [Journal Article] Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers (2007)
  • Author(s): K. Danno and T. Kimoto
  • Journal Title: J. Appl. Phys 101 Pages: 1037041-5
  • Peer Reviewed
• [Journal Article] Deep level transient spectroscopy study of defects in hydrogen implanted p-type 4H-SiC (2007)
  • Author(s): G. Alfieri and T. Kimoto
  • Journal Title: J. Appl. Phys 107 Pages: 1037161-4
  • Peer Reviewed
• [Journal Article] Topographic study of dislocation structure in hexagonal SiC single crystals with low dislocation density (2007)
  • Author(s): D. Nakamura, S. Yamaguchi, I. Gunjishima, Y. Hirose and T. Kimoto
  • Journal Title: J. Crystal Growth 304 Pages: 57-63
  • Peer Reviewed
• [Journal Article] 4H-SiC lateral double RESURF MOSFETs with low on-resistance (2007)
  • Author(s): M. Noborio, J. Suda and T. Kimoto
  • Journal Title: IEEE Trans. Electron Devices 54 Pages: 1216-1223
  • Peer Reviewed
• [Journal Article] Investigation of carrier lifetime in 4H- SiC epilayers and lifetime control by electron irradiation (2007)
  • Author(s): K. Danno, D. Nakamura and T. Kimoto
  • Journal Title: Appl. Phys. Lett. 90
  • Peer Reviewed
• [Journal Article] Power conversion with SiC devices at extremely high ambient temperatures (2007)
  • Author(s): T. Funaki, J. C. Balda, J. Junghans, A. S . Kashyap, H. A. Mantooth, F. Barlow, T. Kimoto and T. Hikihara
  • Journal Title: IEEE Trans. Power Electronics 22 Pages: 1321-1329
  • Peer Reviewed
• [Journal Article] Embedded epitaxial growth of 4H-SiC on trenched substrates and pn junction characteristics (2006)
  • Author(s): T.Kimoto 他
  • Journal Title: Microelectron. Eng. 83 Pages: 27-29
• [Journal Article] Epitaxial growth of 4H-SiC{0001} and reduction of deep levels (2006)
  • Author(s): T.Kimoto 他
  • Journal Title: Superlattices and Microstructures 40 Pages: 225-232
• [Journal Article] Dose designing and fabrication of 4H-SiC double RESURF MOSFETs (2006)
  • Author(s): T.Kimoto 他
  • Journal Title: Proc. 18th Int. Symp. On Power Semiconductor Devices Pages: 273-276
• [Journal Article] SiC migration enhanced embedded epitaxial growth technology (2006)
  • Author(s): T.Kimoto 他
  • Journal Title: Materials Science Forum 527-529 Pages: 251-254
• [Journal Article] Reduction of on-resistance in 4H-SiC multi-RESURF MOSFETs (2006)
  • Author(s): T.Kimoto 他
  • Journal Title: Materials Science Forum 527-529 Pages: 1305-1308
• [Journal Article] Improved dielectric and interface properties of 4H-SiC MOS structures processed by oxide deposition and N20 (2006)
  • Author(s): T.Kimoto 他
  • Journal Title: Materials Science Forum 527-529 Pages: 987-990
• [Presentation] Electrical characterization of MOS structure with deposited oxides Annealed in N_2O or NO (2008)
  • Author(s): M. Grieb, M. Noborio, D. Peters, A. J. Bauer , P. Friedrichs, T. Kimoto, and H. Ryssel
  • Organizer: Europ. Conf. on Silicon Carbide and Related Materials 2008
  • Place of Presentation: Barcelona
  • Year and Date: 2008-09-10
• [Presentation] First demonstration of SiC MISFETs with 4H-AIN gate dielectric (2008)
  • Author(s): M. Horita, M. Noborio, T. Kimoto, and J. Suda
  • Organizer: Europ. Conf. on Silicon Carbide and Related Materials 2008
  • Place of Presentation: Barcelona
  • Year and Date: 2008-09-10
• [Presentation] Spatial profilling of planar defects in 4H-SiC epilayers using micro-photoluminescence mapping (2008)
  • Author(s): G. Feng, J. Suda, and T. Kimoto
  • Organizer: Europ. Conf. on Silicon Carbide and Related Materials 2008
  • Place of Presentation: Barcelona
  • Year and Date: 2008-09-08
• [Presentation] Capacitance spectroscopy study of midgap levels in n-type SiC polytypes (2008)
  • Author(s): G. Alfieri, and T. Kimoto
  • Organizer: Europ. Conf. on Silicon Carbide and Related Materials 2008
  • Place of Presentation: Barcelona
  • Year and Date: 2008-09-08
• [Presentation] Deep levels generated by ion-implantation in n-and p-type 4H-SiC (2008)
  • Author(s): K. Kawahara, G. Alfieri, and T. Kimoto
  • Organizer: Europ. Conf. on Silicon Carbide and Related Materials 2008
  • Place of Presentation: Barcelona
  • Year and Date: 2008-09-08
• [Presentation] 4H-SiC double RESURF MOSFETs with a record performance by increasing RESURF dose (2008)
  • Author(s): M. Noborio, J. Suda, and T. Kimoto
  • Organizer: 20th Int. Symposium on Power Semiconductor Devices & IC's
  • Place of Presentation: Orlando
  • Year and Date: 2008-05-21
• [Presentation] 4H-SiC double RESURF MOSFETs with a record perfomance by increasing RESURF dose (2008)
  • Author(s): M. Noborio, J. Suda, T. Kimoto
  • Organizer: Proc. of 20th Int. Symposium on Power Semiconductor Devices &IC's
  • Place of Presentation: Orlando, Florida
  • Year and Date: 2008-05-21
• [Presentation] Temperature Dependence of Electrical Properties in Al-doped 4H-SiC Epitaxial Layers Investigated by Hall-Effect Measurements (2007)
  • Author(s): A. Koizumi, J. Suda and T. Kimoto
  • Organizer: Int. Conf. on Silicon Carbide and Related Materials 2007
  • Place of Presentation: Otsu
  • Year and Date: 2007-10-17
• [Presentation] Search for hydrogen related defects in p-type 6H and 4H-SiC (2007)
  • Author(s): G. Alfieri and T. Kimoto
  • Organizer: Int. Conf. on Silicon Carbide and Related Materials 2007 Otsu
  • Place of Presentation: Otsu
  • Year and Date: 2007-10-17
• [Presentation] Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO2 Stack Gate Structures (2007)
  • Author(s): M. Noborio, J. Suda and T. Kimoto
  • Organizer: Int. Conf. on Silicon Carbide and Related Materials 2007
  • Place of Presentation: Otsu
  • Year and Date: 2007-10-17
• [Presentation] Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO_2 Stack Gate Structures (2007)
  • Author(s): M. Noborio, J. Suda and T. Kimoto
  • Organizer: Int. Conf. on Silicon Carbide and Related Materials 2007
  • Place of Presentation: Otsu, Japan
  • Year and Date: 2007-10-17
• [Presentation] Bevel mesa combined with implanted junction termination structure for 10 kV SiC PiN diodes (2007)
  • Author(s): T. Hiyoshi, T. Hori, J. Suda and T. Kimoto
  • Organizer: Int. Conf. on Silicon Carbide and Related Materials 2007
  • Place of Presentation: Otsu
  • Year and Date: 2007-10-16
• [Book] Silicon Carbide and Related Materials 2007 (2009)
  • Author(s): A. Suzuki, H. Okumura, T. Kimoto, T. Funaki, K. Fukuda, and S. Nishizawa
  • Publisher: Trans Tech Publications
• [Book] Wide Bandgap Semiconductors (2007)
  • Author(s): K. Takahashi, A. Yoshikawa, A. Sandhu, T. Kimoto, 他
  • Publisher: Springer
• [Book] ワイドギャップ半導体光・電子デバイス (2006)
  • Author(s): 高橋清、長谷川文夫、吉川明彦、木本恒暢、他
  • Publisher: 森北出版株式会社
• [Remarks]
  • URL: http://semicon.kuee.kyoto-u.ac.jp/