Fabrication and characterization of normally-off GaN HEMTs

• Project/Area Number: 18206041
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Nagoya University
• Principal Investigator: MIZUTANI Takashi Nagoya University, 大学院・工学研究科, 教授 (70273290)
• Co-Investigator(Kenkyū-buntansha): KISHIMOTO Shigeru 名古屋大学, 大学院・工学研究科, 助教 (10186215) ; OSAKA Jiro 名古屋大学, 大学院・工学研究科, 教授 (20377849) ; (MASAHITO Kurouchi 名古屋大学, 大学院・工学研究科, 研究員 (10452187)
• Project Period (FY): 2006 – 2008
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥50,700,000 (Direct Cost: ¥39,000,000、Indirect Cost: ¥11,700,000); Fiscal Year 2008: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000); Fiscal Year 2007: ¥8,320,000 (Direct Cost: ¥6,400,000、Indirect Cost: ¥1,920,000); Fiscal Year 2006: ¥37,310,000 (Direct Cost: ¥28,700,000、Indirect Cost: ¥8,610,000)
• Keywords: GaN / HEMT、ノーマリオフ、MOSFET / InGaN cap / ひずみ分極 / ノーマリオフ / GaN HEMT / Mgドーピング / MOSFET / HfO_2 / 高耐圧 / HEMT / フッ素プラズマ処理 / ひずみ電界 / しきい値電圧シフト / 電流DLTS

Research Abstract

本研究では、開発の期待が高い高性能ノーマリオフ型GaN FETの課題を解決する方法として、InGaN cap層導入によるひずみ分極制御AlGaN/GaN HEMT、および高誘電率を有するHfO_2をゲート絶縁膜とするGaN MOSFET, AlGaN/GaN MOSFETを提案した。さらにデバイス試作により本提案の有効性を示すとともに、しきい値がおのおの1.1V, 3Vのノーマリオフ動作を実現し、また高い電流駆動能力を実証した。

Research Products

• [Journal Article] Enhancement-mode AlGaN/GaN HEMTs with thin InGaN cap layer (2008)
  • Author(s): M. Ito, S. Kishimoto, F. Nakamura, T. Mizutani
  • Journal Title: phys. stat. sol. (c) Vol.5, No.6 Pages: 1929-1931
  • Peer Reviewed
• [Journal Article] Normally-off AlGaN/GaN MOSHFETs with HfO_2 gate oxide (2008)
  • Author(s): S. Sugiura, S. Kishimoto, T. Mizutani, M. Kuroda, T. Ueda, T. Tanaka
  • Journal Title: phys. stat. sol.(c) Vol.5, No.6 Pages: 1923-1925
  • Peer Reviewed
• [Journal Article] Enhancement-Mode n-Channel GaN MOSFETs Using HfO_2 as a Gate Oxide (2008)
  • Author(s): S. Sugiura, S. Kishimoto, T. Mizutani, et. al
  • Journal Title: IEICE Trans. Electron. E91-C Pages: 1001-1003
  • NAID: 10026818401
  • Peer Reviewed
• [Journal Article] Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer (2008)
  • Author(s): M. Ito, S. Kishimoto, F. Nakamura, T. Mizutani
  • Journal Title: IEICE Trans. Electron. E91-C Pages: 989-993
  • NAID: 10026818374
  • Peer Reviewed
• [Journal Article] Evaluation of deep levels in GaN grown by RF-MBE on GaN template by capacitance DLTS (2008)
  • Author(s): T. Mitsunaga, M. Kurouchi, S. Kishimoto, T. Mizutani, et. al
  • Journal Title: phys. stat. sol. (c) 5 Pages: 3032-3034
  • Peer Reviewed
• [Journal Article] Enhancement-mode AlGaN/GaN HEMTs with thin InGaN cap layer (2008)
  • Author(s): M. Ito, S. Kishimoto, F. Nakamura, T. Mizutani
  • Journal Title: phys. stat. sol. (c) 5 Pages: 1929-1931
  • Peer Reviewed
• [Journal Article] Normally-off AlGaN/GaN MOSHFETs with HfO_2 gate oxide (2008)
  • Author(s): S. Sugiura, S. Kishimoto, T. Mizutani, et al
  • Journal Title: phys. stat. sol. (c) 5 Pages: 1923-1925
  • Peer Reviewed
• [Journal Article] Enhancement-mode n-channel GaN MOSFETs fabricated on p-GaN using HfO_2 as gate oxide (2007)
  • Author(s): S. Sugiura, S. Kishimoto, T. Mizutani, M. Kuroda, T. Ueda, T. Tanaka
  • Journal Title: Electronics Letters Vol. 43, No. 17 Pages: 952-953
  • Peer Reviewed
• [Journal Article] AlGaN/GaN HEMTs with Thin InGaN Cap Layer for Normally Off Operation (2007)
  • Author(s): T. Mizutani, M. Ito, S. Kishimoto, F. Nakamura
  • Journal Title: IEEE Electron Device Letters Vol. 28, No. 7 Pages: 549-551
  • Peer Reviewed
• [Journal Article] Enhancement-mode n-channel GaN MOSFETs fabricated on p-GaN using HfO2 as gate oxide (2007)
  • Author(s): S. Sugiura, S. Kishimoto, T. Mizutani, et. al.
  • Journal Title: Electronics Letters 43 Pages: 952-953
  • Peer Reviewed
• [Journal Article] AIGaN/GaN HEMTs with Thin InGaN Cap Layer for Normally Off Operation (2007)
  • Author(s): T. Mizutani, M. Ito, S. Kishimoto, F. Nakamura
  • Journal Title: IEEE Electron Device Letters 28 Pages: 549-551
  • Peer Reviewed
• [Journal Article] AlGaN/GaN MIS-HEMTs with HfO2 Gate Insulator (2007)
  • Author(s): A. Kawano, S. Kishimoto, Y. Ohno, K. Maezawa, T. Mizutani, H. Ueno, T. Ueda, T. Tanaka
  • Journal Title: phys. stat. sol.(c) 4 Pages: 2700-2703
  • Peer Reviewed
• [Journal Article] Drain current DLTS of normally-off AlGaN/GaN HEMTs (2007)
  • Author(s): T.Mizutani, A.Kawano, S.Kishimoto, K.Maeazawa
  • Journal Title: phys. stat. sol. (c) (印刷中)
• [Journal Article] A1GaN/GaN HEMTs with inclined-gate-recess structure (2006)
  • Author(s): Y.Aoi, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani
  • Journal Title: Jpn. J. Appl. Phys. Vol.45,Part 1,No.4B Pages: 3368-3371
• [Presentation] Normally-off AlGaN/GaN MOSFETS with HfO_2 Gate Oxide Deposited by Pulsed-Laser Deposition (2008)
  • Author(s): T. Mizutani, S. Sugiura, S. Kishimoto, M. Kuroda, T. Ueda, T. Tanaka
  • Organizer: Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe (WOCSDICE 2008)
  • Place of Presentation: Leuven, Belgium
• [Presentation] ノーマリオフ型GaN電界効果トランジスタ (2008)
  • Author(s): 水谷孝
  • Organizer: 学術振興会162委員会第58回研究会
• [Presentation] Normally-off AlGaN/GaN MOSFETS with HfO_2 Gate Oxide Deposited by Pulsed-Laser Deposition (2008)
  • Author(s): T. Mizutani, S. Sugiura, S. Kishimoto, et al
  • Organizer: Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe (WOC SDICE 2008)
  • Place of Presentation: Leuven, Belgium
• [Presentation] Enhancement-Mode AlGaN/GaN HEMTs with Thin InGaN Cap Layer (2007)
  • Author(s): M. Ito, S. Kishimoto, F. Nakamura, T. Mizutani
  • Organizer: 7th Int'l Conference of Nitride Semiconductors (ICNS-7)
  • Place of Presentation: Las Vegas, Nevada, USA
• [Presentation] Normally-Off AlGaN/GaN MOSFETs with HfO2 Gate Oxide (2007)
  • Author(s): S. Sugiura, S. Kishimoto, T. Mizutani, M. Kuroda, T. Ueda, T. Tanaka
  • Organizer: 7th Int'l Conference of Nitride Semiconductors (ICNS-7)
  • Place of Presentation: Las Vegas, Nevada, USA
• [Patent(Industrial Property Rights)] 電界効果トランジスタおよびその製造方法 (2007)
  • Inventor(s): 水谷孝, 田中毅, 上田哲三
  • Industrial Property Rights Holder: 名古屋大学、松下電器産業
  • Industrial Property Number: 2007-078987
  • Filing Date: 2007-03-26