Studies on epitaxial growth of GaAsN by controlling the surface steps

• Project/Area Number: 18560017
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Toyota Technological Institute
• Principal Investigator: OHSHITA Yoshio Toyota Technological Institute, 大学院・工学研究科, 准教授 (10329849)
• Project Period (FY): 2006 – 2008
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥4,100,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥600,000); Fiscal Year 2008: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000); Fiscal Year 2007: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000); Fiscal Year 2006: ¥1,500,000 (Direct Cost: ¥1,500,000)
• Keywords: 電子デバイス / 電子・電気材料 / 半導体物性 / 結晶成長 / 太陽電池

Research Abstract

将来の高効率太陽電池実現のために必要な材料であるInGaNAs系材料の高品質化を目的として研究を行った.結晶成長中における表面反応の制御、具体的には、ステップ密度やステップ端原子などを制御する、あるいは、ガス供給の仕方の(断続供給など)や光照射による表面での成膜種の拡散を促進することが、結晶中の不純物濃度低減ならびに窒素起因の欠陥濃度の減少に有効であることが明らかになり、結晶の高品質化が可能となった.

Research Products

• [Journal Article] Effects of residual carbon and hydrogen atoms on electrical property of GaAs Ngrown by chemical beam epitaxy (2008)
  • Author(s): H. Suzuki, K. Nishimura, K. Saito, Y. Ohshita, N. Kojima, and M. Yamaguchi
  • Journal Title: Jpn, J.Appl. Phys 47巻 Pages: 6910-6913
  • Peer Reviewed
• [Journal Article] Carbon reduction of in GaAsN thin films by flow-rate modulated chemical beamepitaxy (2008)
  • Author(s): K. Nishimura, H. Suzuki, K. Saito, Y. Ohshita, N. Kojima, and M. Yamaguchi
  • Journal Title: 47巻 Pages: 2072-2075
  • NAID: 40016003367
  • Peer Reviewed
• [Journal Article] Effects of residual carbon and hydrogen atoms on electrical property of GaAsN grown by chemical beam epitaxy (2008)
  • Author(s): H. Suzuki
  • Journal Title: Jpn. J. Appl. Phys. 47 Pages: 6910-6913
  • Peer Reviewed
• [Journal Article] Carbon reduction in GaAsN thin films by flow-rate modulated chemical beam epitaxy (2008)
  • Author(s): K. Nishiumura
  • Journal Title: Jpn. J. Appl. Phys. 47 Pages: 2072-2075
  • Peer Reviewed
• [Journal Article] Carbon Reduction in GaAsN Thin Films by Flow-Rate-Modulated Chemical Beam Epitaxy (2008)
  • Author(s): K. Nishimura
  • Journal Title: Jpn. J. Appl. Phys. 47 Pages: 2072-2075
  • Peer Reviewed
• [Journal Article] Carbonincorporation process in GaAsN films grown by chemical beam epitaxy using MMH or DMH as N precursor (2007)
  • Author(s): H. Suzuki, K. Nishimura, H. S. Lee, Y. Ohshita, and M. Yamaguchi
  • Journal Title: Thin Solid Films 515巻 Pages: 5008-5011
  • Peer Reviewed
• [Journal Article] Hydrogen reduction in GaAsN thin films by flow-rate modulated epitaxy (2007)
  • Author(s): K.Saito
  • Journal Title: Thin Solid Films (In press)
• [Presentation] Effect of surface steps on N incorporation processes of GaAsN films grown in chemical beam epitaxy (2008)
  • Author(s): T. Hashiguchi
  • Organizer: Renewable energy 2008
  • Place of Presentation: Korea
  • Year and Date: 2008-10-14
• [Presentation] Effect of surface steps on N incorporation processes of GaAsN films grown in chemical beam epitaxy (2008)
  • Author(s): T. Hashiguch
  • Organizer: Renewable energy 2008
  • Place of Presentation: 韓国
  • Year and Date: 2008-10-14
• [Presentation] Effects of residual carbon and hydrogen atom on electrical property of GaAsN grown by chemical beam epitaxy (2007)
  • Author(s): H. Suzuki, K. Nishimura, T. Hashiguchi, Y. Ohshita, N. Kojima, and M. Yamaguchi
  • Organizer: 17th International Photovoltaic Science and Engineering Conference
  • Year and Date: 2007-12-04
• [Presentation] THE EFFECT OF RESIDUAL IMPURITIES ON ACCEPTOR CONCENTRATION IN GAASN FILMS GROWN BY CHEMICAL BEAM EPITAXY (2007)
  • Author(s): K. Nishimura
  • Organizer: 17th International Photovoltaic Science and Engineering Conference
  • Year and Date: 2007-12-04