| Budget Amount *help |
¥4,110,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥810,000)
Fiscal Year 2009: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2008: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2007: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2006: ¥600,000 (Direct Cost: ¥600,000)
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| Research Abstract |
This project focused on the development of a quantum mechanical design tool and a device design guideline to realize ultra-high performance information technology by introducing new channel materials and new device architectures. We found that an optimum structural design of source and drain electrodes is necessary for III-V MOSFETs to outperform the conventional Si-MOSFETs. Furthermore, in Si nanowire MOSFETs with gate-all-around architecture, the source-drain tunneling effects were found to possibly limit the further downscaling below 10nm gate length.
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