Exploration of feasible applications of SOQ wafers to various fields

• Project/Area Number: 18560679
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Structural/Functional materials
• Research Institution: Toyo University
• Principal Investigator: HANAJIRI Tatsuro Toyo University, 工学部, 教授 (30266994)
• Co-Investigator(Kenkyū-buntansha): TOYABE Toru 東洋大学, 工学部, 教授 (20266993) ; KASHIWAGI Kunihiro 東洋大学, 工学部, 教授 (30058094) ; MORIKAWA Takitaro 東洋大学, 工学部, 教授 (80191013)
• Project Period (FY): 2006 – 2008
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥2,320,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥420,000); Fiscal Year 2008: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000); Fiscal Year 2007: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000); Fiscal Year 2006: ¥500,000 (Direct Cost: ¥500,000)
• Keywords: 新機能材料 / MOSFET / SOI / SOQ / SOI基板 / SOQ基板 / SIMOX基板 / BOX(Buried Oxide) / キャリア捕獲中心 / SOI MOSFET / SOQ MOSFET / サブスレッドショルド係数

Research Abstract

SOQ 基板(silicon on quartz)の有用性ついて、基板の基礎物性評価から、デバイスの試作に至るまで様々な視点からの検証を試みた。SOQ MOSFET試作の準備段階として、まずSOQ 基板の代替としてSOI基板を用いて、基板におけるナノオーダー級超薄膜の基礎物性評価方法を確立した。SOI/BOX(Buried Oxide、埋込み酸化膜)界面近傍において高密度のキャリア捕獲中心の定量的に評価することに初めて成功した。さらにSOQ基板の応用分野としてエレクトロニクスに留まらずμ-TAS(micro- total-analysis system)のプラットフォームとしての有用性について提案した。

Research Products

• [Journal Article] "Characterization of distribution of trap states in silicon-on-insulator layers by front-gate characteristics in n-channel SOI MOSFETs (2008)
  • Author(s): K.KAJIWARA, Y.NAKAJIMA, T. HANAJIRI, T.TOYABE, and T.SUGANO
  • Journal Title: IEEE trans. Electron Devices 55 Pages: 1702-1707
  • Peer Reviewed
• [Journal Article] Three dimensional image construction and spectrum extraction from two dimensional elemental mapping in Auger electron spectroscopy," Journal of Vacuum Science & Technology A (2008)
  • Author(s): N. URUSHIHARA, S. IIDA, N. SANADA, M. SUZUKI, D.F. PAUL, S. BRYAN, Y. NAKAJIMA, T. HANAJIRI, K. KAKUSHIMA, P. AHMET, K. TSUTSUI, and H. IWAI
  • Journal Title: Vacuum, Surfaces, and Films 26 Pages: 668-672
  • Peer Reviewed
• [Journal Article] Drive current enhancement in silicon on quartz MOSFETs (2008)
  • Author(s): Y. NAKAJIMA, K. SASAKI, T. HANAJIRI, T. TOYABE, and T. SUGANO
  • Journal Title: IEEE Electron Device Lett., 29 Pages: 944-945
  • Peer Reviewed
• [Journal Article] Detection of surface immunoreactions on individual cells by electrophoretic mobility measurement in a micro-channel (2008)
  • Author(s): A. AKI, Y. NIHEI, H. ASAI, T. UKAI. H. MORIMOTO, Y. NAKAJIMA, T. HANAJIR I, T. MAEKAWA
  • Journal Title: Sensors and Actuators B : Chemical 131 Pages: 285-289
  • Peer Reviewed
• [Journal Article] Ultraviolet irradiation effects on and depth profiles in X-ray photoelectron spectra of poly(vinylpyridine) thin fiIms (2008)
  • Author(s): S. NISHIYAMA, M. TAJIMA, Y. NAKAJIMA, T. HANAJIR I, Y. YOSHIDA
  • Journal Title: Jpn. J. Appl. Phys. 47 Pages: 432-437
  • Peer Reviewed
• [Journal Article] Characterization of distribution of trap states in silicon-on-insulator layers by front-gate characteristics in n-channel SOI MOSFETs (2008)
  • Author(s): K. KAJIWARA, Y. NAKAJIMA, T. HANAJIRI. T. TOYABE, T. SUGANO
  • Journal Title: IEEE trans. Electron Devices 55 Pages: 1702-1707
  • Peer Reviewed
• [Journal Article] Three dimensional image construetion and spectrum extraction from two dimensional elemental mapping in Auger eleetron spectroscopy (2008)
  • Author(s): N. URUSHIHARA, S. IIDA, N. SANADA, M. SUZUKI, D. F. PAUL, S. BRYAN, Y. NAKAJIMA, T. HANAJIRI, K. KAKUSHIMA, P. AHMET, K. TSUTSUI, H. IWAI
  • Journal Title: ournal of Vacuum Science & Technology A : Vacuum, Surfaces, and Films 26 Pages: 668-672
  • Peer Reviewed
• [Journal Article] Drive current enhancement in silicon on quartz MOSFETs (2008)
  • Author(s): Y. NAKAJIMA, K. SASAKI, T. HANAJIRI, T. TOYABE, T. SUGANO
  • Journal Title: IEEE Electron Device Lett. 29 Pages: 944-945
  • Peer Reviewed
• [Journal Article] Capture of nonmagnetic particles and living cell using a microelectromagnetic system (2008)
  • Author(s): A. AKI, O. ITO, H. MORIMOTO, Y. NAGAOKA, Y. NAKAJIMA, T. MIZUKI, T. HANAJIRI, R. USAMI, T. MAEKAWA
  • Journal Title: J. Appl. Phys. 104 Pages: 94509-94513
  • Peer Reviewed
• [Journal Article] "UV-irradiation Effects and Depth Profiles in XPS Spectra of Poly(vinylpyridines)" (2008)
  • Author(s): S. NISHIYAMA, T. TAJIMA, Y. NAKAJIMA, T. HANAJIRI and Y. YOSHIDA
  • Journal Title: Jpn. J. Appl. Phys. 47 Pages: 432-437
  • Peer Reviewed
• [Journal Article] "Detection of Surface Immunoreactions on Individual Cells by Electro phoretic Mobility Measurement in a Micro-Channel" (2008)
  • Author(s): A. AKI, Y. NUHEI, H. ASAI, T. UKAI, H. MORIMOTO, Y. NAKAJIMA, T. HANAJIRI and T. MAEKAWA
  • Journal Title: Sensors & Actuators: B. Chemical B131 Pages: 285-289
  • Peer Reviewed
• [Journal Article] "Dissociation of Carbon Dioxide and Creation of Carbon Particles and FILMS at ROOM TEMPERATURE" (2007)
  • Author(s): T. FUKUDA, T. MAEKAWA, T. HASUMURA, N. RANTONEN, K. ISHII, Y. NAKAJIMA, T. HANAJIRI, Y. YOSHIDA, R. Whitby and S. Mikhalovsky
  • Journal Title: New Journal of Physics 9 Pages: 321-332
  • Peer Reviewed
• [Journal Article] SOI基盤における表面再結合速度の工学的測定による評価 (2) (2007)
  • Author(s): 宮澤吉康, 中島義賢, 花尻達郎, 小室修二, 鳥谷部達
  • Journal Title: 応用物理学関係連合講演会講演予稿集 54 Pages: 825-825
• [Journal Article] 空乏型SOI MOSFETの有用性(2) (2006)
  • Author(s): 宮沢健司, 宮澤吉康, 中島義賢, 花尻達郎, 鳥谷部達
  • Journal Title: 応用物理学会学術講演会講演予稿集 67 Pages: 798-798
• [Journal Article] Characterization of electric characteristics of SOI wafers, (2006)
  • Author(s): K.ODA, Y.NAKAJIMA, T.HANAJIRI, T.SUGANO
  • Journal Title: Proc. of Int. Symp. on Bioscience and Nanotechnology 4 Pages: 92-92
• [Journal Article] Estimation of surface Recombination Velocity at silicon on insulator (SOI)/buried oxide (BOX) interface, (2006)
  • Author(s): Y.MIYAZAWA, T.YAMADA, Y.NAKAJIMA, T.HANAJIRI, S.KOMURO, T.TOPYABE
  • Journal Title: Proc. of Int. Symp. on Bioscience and Nanotechnology 4 Pages: 94-94
• [Journal Article] Advantages of Ion Sensitive FETs by using Silocon-On-Quartz wafer (2006)
  • Author(s): H.ASAI, Y.NAKAJIMA, T.HANAJIRI, T.SUGANO
  • Journal Title: Proc. of Int. Syem. on Bioscience and Nanotechnology 4 Pages: 89-89
• [Presentation] ゲート酸化膜のトラップがSOIMOSFETトンネル電流に与える影響の評価 (2009)
  • Author(s): 戸田貴大, 中島義賢, 花尻達郎, 鳥谷部達, 菅野卓雄
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-03-30
• [Presentation] ケルビンフォース顕微鏡を用いた電気的非標識免疫測定 (2009)
  • Author(s): 山下 滋, 沼田慎吉, 安喜敦士, 東海林崇, 中島義賢, 前川 透, 花尻達郎
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-03-30
• [Presentation] ゲート酸化膜のトラップがSOI MOSFETトンネル電流に与える影響の評価 (2009)
  • Author(s): 戸田貴大, 中島義賢, 花尻達郎, 島谷部達, 菅野卓雄
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-03-30
• [Presentation] Discussion of origins of high-density trap states in SIMOX wafers (2009)
  • Author(s): Y. NAKAJIMA, T. TODA, T. HANAJIRI, T. TOYABE, T. SUGANO
  • Organizer: Proc. of 10th International Conference on Ultimate Integration of Silicon
  • Place of Presentation: Aahen, Germany
  • Year and Date: 2009-03-18
• [Presentation] Suppression of DIBL in deca-nano SOI MOSFETs by controlling permittivity and thickness of BOX layers (2009)
  • Author(s): S. ABE, Y. MIYAZAWA, Y. NAKAJIMA, T. HANAJIRI, T. TOYABE, T. SUGANO
  • Organizer: Proc. of 10th International Conference on Ultimate Integration of Silicon
  • Place of Presentation: Aahen, Germany
  • Year and Date: 2009-03-18
• [Presentation] Improvement of performance of Drain-Source-On-Insulator MOSFETs by using heavily doped-Si region between local BOX regions (2009)
  • Author(s): T. YAMADA, Y. MIYAZAWA, Y. NAKAJIMA, T. HANAJIRI, T. TOYABE, T. SUGANO
  • Organizer: Proc. of 10th International Conference on Ultimate Integration of Silicon
  • Place of Presentation: Aahen, Germany
  • Year and Date: 2009-03-18
• [Presentation] Improvement of performance of Drain-Source-On-Insulator MOSFETs by using heavily doped-Si region between local BOX regions (2009)
  • Author(s): T. YAMADA, Y.MIYAZAWA, Y. NAKAJIMA, T. HANAJIRI, T. TOYABE, and T. SUGANO
  • Organizer: Proc. of 10th International Conference on Ultimate Integration of Silicon
• [Presentation] Suppression of DIBL in deca-nano SOI MOSFETs by controlling permittivity and thickness of BOX layers (2009)
  • Author(s): S. ABE, Y. MIYAZAWA, Y. NAKAJIMA, T. HANAJIRI, T. TOYABE, and T. SUGANO
  • Organizer: Proc. of 10th International Conference on Ultimate Integration of Silicon
• [Presentation] Discussion of origins of high-density trap states in SIMOX wafers (2009)
  • Author(s): Y. NAKAJIMA, T. TODA, T. HANAJIRI, T. TOYABE, and T. SUGANO
  • Organizer: Proc. of 10th International Conference on Ultimate Integration of Silicon
• [Presentation] 局所BOX間高不純物ドーピングによるDSOI MOSFETの特性改善 (2008)
  • Author(s): 山田辰哉、宮澤吉康、中島義賢、花尻達郎、鳥谷部達、菅野卓雄
  • Organizer: 第69回応用物理学会学術講演会予稿集
  • Place of Presentation: 中部大学
  • Year and Date: 2008-09-03
• [Presentation] BOX比誘電率およびBOX膜厚制御によるDIBLの抑制効果 (2008)
  • Author(s): 阿部俊平、宮澤吉康、中島義賢、花尻達郎、鳥谷部達、菅野卓雄
  • Organizer: 第69回応用物理学会学術講演会予稿集
  • Place of Presentation: 中部大学
  • Year and Date: 2008-09-03
• [Presentation] Synthesis of carbon-nickel composite by photolytic dissociation of nickelocene under a dc electric field in near-critical carbon dioxide" (2008)
  • Author(s): T. HASUMURA, T. FUKUDA, N. RANTONEN, Y. NAKAJIMA, T. HANAJIRI, R. WHITBY, T. MAEKAWA
  • Organizer: Proc. of Int. Conf. Nanotechnology in Carbon and Related Materials
  • Place of Presentation: Brighton Univ. U. K.
  • Year and Date: 2008-08-08
• [Presentation] Modulation of electron transport in SWCNTs by PLT conjugation" (2008)
  • Author(s): T. HIGASHI, Y. NAKAJIMA, M. KOJIMA, K. ISHII, T. HANAJIRI, A. IOUE, T. MAEKAWA
  • Organizer: Proc. of Int. Conf. Nanotechnology in Carbon and Related Materials
  • Place of Presentation: Brighton Univ. U. K.
  • Year and Date: 2008-08-08
• [Presentation] 選択的BOXを有するSOI MOSFETの有用性 (2008)
  • Author(s): 前川貴信、山田辰哉、宮澤吉康、中島義賢、花尻達郎、鳥谷部達、菅野卓雄
  • Organizer: 第54回応用物理学関係連合講演会講演予稿集
  • Place of Presentation: 日本大学理工学部
  • Year and Date: 2008-03-29
• [Presentation] "Optical Properties and XPS of Poly(vinylpyridine)Ionic Complexes" (2007)
  • Author(s): S. NISHIYAMA, M. TAJIMA, Y. NAKAJIMA, T. HANAJIRI and Y. YOSHIDA
  • Organizer: Abst. of 2nd. Int. Conf. on Solid State Ionics
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2007-12-18
• [Presentation] 3D Image Acquiring and Spectrum Extraction from 2D Elemental Mapping in Auger Electron Spectroscopy (2007)
  • Author(s): N.URUSHIHARA, S.IIDA, N.SANADA, D.F.PAUL, S.BRYAN, M.SUZUKI, Y.NAKAJIMA and T.HANAJIRI
  • Organizer: AVS 54th Int. Symposium Paper AS-TuA10 (October 16 2007) Washington State Convention Center
  • Place of Presentation: Seattle, WA, USA
  • Year and Date: 2007-10-16
• [Presentation] "3D Image Acquiring and Spectrum Extraction from 2D Elemental Mapping in Auger Electron Spectroscopy" (2007)
  • Author(s): N. URUSHIHARA, S. IIDA, N. SANADA, D. F. PAUL, S. BRYAN, M. SUZUKI, Y. NAKAJIMA and T. HANAJIRI
  • Organizer: AVS 54th Int. Symposium
  • Place of Presentation: Washington State Convention Center, Seattle, WA, USA
  • Year and Date: 2007-10-16
• [Presentation] "Spectroscopic Characterization of Electron Conduction in mono-dispersed SWCNTs" (2007)
  • Author(s): M. SATO, Y. NAKAJIMA, T. HANAJIRI and T. MAEKAWA
  • Organizer: Abst. of Int. Conf. on Carbon Nanoscience and Nanotechnology
  • Place of Presentation: Brighton University, Sussex, UK
  • Year and Date: 2007-08-30
• [Presentation] "How Can You Put one DNA Molecule to a Nano-Gap between Electrodes?" (2007)
  • Author(s): T. HIGASHI, Y. NAKAJIMA, T. UKAI, T. HANAJIRI, A. INOUE, T. MAEKAWA and T. SUGANO
  • Organizer: Abst. of symposium E(Nanodevices and Nanofabrication), 4th Int. Conf. on Materials for Advanced Technologies
  • Place of Presentation: Convention Center, Singapore
  • Year and Date: 2007-07-06
• [Presentation] "Advantages of Depletion Type SOI MOSFETs" (2007)
  • Author(s): K. MIYAZAWA, Y. MIYAZAWA, Y. NAKAJIMA, T. HANAJIRI and T. TOYABE
  • Organizer: 4th Int. Conf. on Materials for Advanced Technologies 2007
  • Place of Presentation: Convention Center, Singapore
  • Year and Date: 2007-07-03
• [Presentation] "Spectroscopic Characterization of Electron Conduction in SWCNTs" (2007)
  • Author(s): M. SATO, Y. NAKAJIMA, T. HANAJIRI, T. MAEKAWA and T. SUGANO
  • Organizer: Abst. of Symposium E(Nanodevices and Nanofabrication), 4th Int. Conf. on Materials for Advanced Technologies
  • Place of Presentation: Convention Center, Singapore
  • Year and Date: 2007-07-03
• [Presentation] "Qantitative Estimation of Surface Recombination Velocity of SOI wafers by PL Decay Method" (2007)
  • Author(s): Y. MIYAZAWA, Y. NAKAJIMA, T. HANAJIRI, S. KOMURO and T. TOYABE
  • Organizer: Abst. of symposium E(Nanodevices and Nanofabrication), 4th Int. Conf. on Materials for Advanced Technologies
  • Place of Presentation: Convention Center, Singapore
  • Year and Date: 2007-07-03
• [Presentation] "UV-irradiation Effects and Depth Profiles in XPS Spectra of Poly(vinylpyridine)Thin Films" (2007)
  • Author(s): S. NISHIYAMA, M. TAJIMA, Y. NAKAJIMA, T. HANAJIRI and Y. YOSHIDA
  • Organizer: Abst. Booklet of the 2007 Int. Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
  • Place of Presentation: Nagano, Japan
  • Year and Date: 2007-06-21
• [Presentation] SOI 基板における表面再結合速度の光学的測定による評価(2) (2007)
  • Author(s): 宮澤吉康、中島義賢、花尻達郎、小室修二、鳥谷部達
  • Organizer: 第54回応用物理学関係連合講演会講演予稿集
  • Place of Presentation: 青山学院大学
  • Year and Date: 2007-03-28
• [Presentation] Advantages of Depletion Type SOI MOSFETs", Abst. of symposium E (Nanodevices and Nanofabrication), 4th Int. (2007)
  • Author(s): K. MIYAZAWA, Y. MIYAZAWA, Y.NAKAJIMA, T.HANAJIRI and T.TOYABE
  • Organizer: Conf. on Materials for Advanced Technologies 2007
  • Place of Presentation: Convention Center, Singapore
  • Year and Date: 2007-03-03
• [Presentation] "Qantitative Estimation of Surface Recombination Velocity of SOI wafers by PL Decay Method (2007)
  • Author(s): Y.MIYAZAWA, Y.NAKAJIMA,T.HANAJIRI, S.KOMURO and T.TOYABE
  • Organizer: Abst. of symposium E (Nanodevices and Nanofabrication), 4th Int. Conf
  • Place of Presentation: Convention Center, Singapore
  • Year and Date: 2007-03-03
• [Presentation] 空乏型SOI MOSFET の有用性(2) (2006)
  • Author(s): 宮沢健司、宮澤吉康、中島義賢、花尻達郎、鳥谷部達
  • Organizer: 第67回応用物理学会学術講演会 講演予稿集
  • Place of Presentation: 立命館大学
  • Year and Date: 2006-08-31
• [Remarks] T. YAMADA, Y. MIYAZAWA, Y. NAKAJIMA, T. HANAJIRI, T.TOYABE and T. SUGANO, "Improvement of performance of DSOI MOSFETs by heavily doping between local BOX regions,"6th Int. Symp. On Bioscience and Nanotechnology p.49(November 7 2008) Tokyo.(審査なし)
• [Remarks] S. ABE, Y. MIYAZAWA, Y. NAKAJIMA, T. HANAJIRI, T.TOYABE and T. SUGANO, "Suppression of DIBL in deca-nano SOI MOSFETs by controlling permittivity and thickness of BOX layers,"6th Int. Symp. on Bioscience and Nanotechnology p.48 (November 7 2008) Tokyo. (審査なし)
• [Remarks] T. TODA, Y. NAKAJIMA, T. HANAJIRI and T. SUGANO, "Clarification of origins of high-density trap states in SIMOX wafers,"6th Int. Symp. on Bioscience and Nanotechnology p.47(November 7 2008) Tokyo. (審査なし)
• [Remarks] T. HANAJIRI, Y. NAKAJIMA, T. TOYABE, A. INOUE, T. SUGANO and T. MAEKAWA,"Nanoelectronics and its application to Bio-Nano Devices,"6th Int. Symp. on Bioscience and Nanotechnology p.6 (November 7 2008) Tokyo. (審査なし)
• [Remarks] T. TODA, T. YAMASHITA, Y. NAKAJIMA, T. HANAJIRI and T.TOYABE, "Characterization of mobility and stress in strained MOSFETs",5th Int. Symp. on Bioscience and Nanotechnology p.74(December 5 2007) Kawagoe. (審査なし)
• [Remarks] T. YAMADA, Y .MIYAZAWA, Y. NAKAJIMA, T. HANAJIRI and T.TOYABE,"Development of a three-dimensional general-purpose device simulator for advanced electron devices",5th Int. Symp. on Bioscience and Nanotechnology p.73(December 5 2007) Kawagoe.(審査なし)
• [Remarks] Y. MIYAZAWA, Y. NAKAJIMA, T. HANAJIRI, S. KOMUROandT.TOYABE, "Non-destructive characterization of surface recombination velocity at SOI/BOX interfaces by PL decays",5th Int. Symp. on Bioscience and Nanotechnology p.69(December 5 2007) Kawagoe(審査なし)
• [Remarks] Y. NAKAJIMA,T. HANAJIRI and T. SUGANO, "Microscopic structure at SOI/BOX inteeface in SIMOX wafers",5th Int. Symp. on Bioscience and Nanotechnology p.68 (December 5 2007) Kawagoe. (審査なし)
• [Remarks] T. HANAJIRI, Y. NAKAJIMA, T. TOYABE, A.IOUE, T.SUGANO and T.MAEKAWA, "Nanoelectronics for Bio-Nano devices",5th Int. Symp. on Bioscience and Nanotechnology p.12(December 5 2007) Kawagoe. (審査なし)
• [Remarks] Y. MIYAZAWA, T. YAMADA, Y. NAKAJIMA, T.HANAJIRI, S.KOMURO and T.TOPYABE, "Estimation of Surface Recombination Velocity at silicon on insulator (SOI)/buried oxide (BOX) interface,"4th Int. Symp. on Bioscience and Nanotechnology p.94 (November 2006) Okinawa.(審査なし)
• [Remarks] K. ODA, Y. NAKAJIMA, T. HANAJIRI and T.SUGANO, "Characterization of electric characteristics of SOI wafers,"4th Int. Symp. on Bioscience and Nanotechnology p. 92 (November 2006) Okinawa.(審査なし)
• [Remarks] T. TOYABE, T. HANAJIRI and. NAKAJIMA, "Development of nano/micro electron devices", Brighton University-Toyo University COE Seminor, (September 2006) Brighton,UK.(招待)(審査なし)
• [Remarks] T. TOYABE, T. HANAJIRI and. NAKAJIMA, "Development of nano/micro electron devices", Brighton University-Toyo University COE Seminor, (September 2006) Brighton,UK.(招待)(審査なし)