| Project/Area Number |
18K13806
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| Research Category |
Grant-in-Aid for Early-Career Scientists
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| Allocation Type | Multi-year Fund |
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| Review Section |
Basic Section 21060:Electron device and electronic equipment-related
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
LIU Jiangwei 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 独立研究者 (30732119)
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| Project Period (FY) |
2018-04-01 – 2020-03-31
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| Project Status |
Completed (Fiscal Year 2019)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2019: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2018: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | ダイヤモンド / トランジスタ / MOSFET / diamond / logic circuits / Diamond / Logic circuits / High-temperature |
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| Outline of Final Research Achievements |
It is well-known that wide bandgap semiconductor diamond is suitable for fabrication of high-temperature, high-power, and high-frequency electronic devices. Recently, the hydrogen-terminated diamond (H-diamond) metal-oxide-semiconductor field-effect transistor (MOSFET) logic circuits such as are fabricated successfully. However, they cannot operate well as the annealing temperature higher than 300 ℃. Here, thermal stabilities for H-diamond Ohmic contacts and MOSFETs have been improved. A low specific contact resistivity and good thermal stability for the Pd/H-diamond are achieved. Good operations for the H-diamond MOSFETs after annealing at 500 degreeC are completed. Stable electrical characteristics are confirmed for the annealed H-diamond MOSFETs after 35 cycles repeat measurements. This study is meaningful to the development of H-diamond MOSFETs for high-temperature applications.
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| Academic Significance and Societal Importance of the Research Achievements |
Thermal stability of hydrogen-terminated diamond MOSFETｓ are improved greatly. They can operate well at annealing temperatures as high as 500 ℃ for as long as one hour. This study is meaningful to the development of diamond MOSFETs and MOSFET logic circuits for high-temperature applications.
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