| Budget Amount *help |
¥6,370,000 (Direct Cost: ¥4,900,000、Indirect Cost: ¥1,470,000)
Fiscal Year 2020: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2019: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2018: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Outline of Final Research Achievements |
Nitride piezoelectric films are attractive for FBAR filters. Enhancement of piezoelectricity was recently found in ScAlN films. Electromagnetical coupling directly contribute to the low insertion loss and large band width. In this study, CeAlN piezoelectric films were grown by RF magnetron sputtering. omega-scan rocking curve FWHM of the c-axis oriented CeAlN films were found to be 3.3 deg., indicating good crystalline orientation. Electromechanical coupling coefficient of the films was determined to be 4.4 % using HBAR conversion loss method.
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