InP-based membrane-type optical and electronic devices for broad band intra-chip/inter-chip interconnection in Si-LSI circuits

• Project/Area Number: 19002009
• Research Category: Grant-in-Aid for Specially Promoted Research
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering; Engineering
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: ARAI Shigehisa 東京工業大学, 量子ナノエレクトロニクス研究センター, 教授 (30151137)
• Co-Investigator(Kenkyū-buntansha): MARUYAMA Takeo 金沢大学, 電子情報学系, 准教授 (60345379) ; 浅田 雅洋 東京工業大学, 大学院・総合理工学研究科, 教授 (30167887) ; 宮本 恭幸 東京工業大学, 大学院・理工学研究科, 教授 (40209953) ; 西山 伸彦 東京工業大学, 大学院・理工学研究科, 准教授 (80447531)
• Co-Investigator(Renkei-kenkyūsha): ASADA Masahiro 東京工業大学, 大学院・総合理工学研究科, 教授 (30167887) ; MIYAMOTO Yasuyuki 東京工業大学, 大学院・理工学研究科, 准教授 (40209953) ; NISHIYAMA Nobuhiko 東京工業大学, 大学院・理工学研究科 (80447531)
• Project Period (FY): 2007 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥551,720,000 (Direct Cost: ¥424,400,000、Indirect Cost: ¥127,320,000); Fiscal Year 2011: ¥64,480,000 (Direct Cost: ¥49,600,000、Indirect Cost: ¥14,880,000); Fiscal Year 2010: ¥64,480,000 (Direct Cost: ¥49,600,000、Indirect Cost: ¥14,880,000); Fiscal Year 2009: ¥64,480,000 (Direct Cost: ¥49,600,000、Indirect Cost: ¥14,880,000); Fiscal Year 2008: ¥186,940,000 (Direct Cost: ¥143,800,000、Indirect Cost: ¥43,140,000); Fiscal Year 2007: ¥171,340,000 (Direct Cost: ¥131,800,000、Indirect Cost: ¥39,540,000)
• Keywords: インターコネクション / グローバル配線 / 半導体レーザ / トランジスタ / テラヘルツ / InP / 光電融合

Research Abstract

We investigated InP-based membrane-type optical and electronic devices for broad band and low-power consumption optical interconnection in Si-LSI circuits since the RC delay time and the power consumption in metal wires will be bottleneck of high-speed operation and high functionality of LSIs in future. As the results, we successfully demonstrated current-injection-type membrane semiconductor lasers as well as photodetectors as low-power consumption optical devices, and also terahertz devices for inter-chip high-speed interconnection.

Research Products

• [Journal Article] GaIn AsP/InP Membrane Lasers for Optical Interconnects (2012)
  • Author(s): M. Futami, T. Shindo, T. Koguchi, K. Shinno, T. Amemiya, N. Nishiyama, and S. Arai
  • Journal Title: IEEE Photon. Technol. Lett Volume: vol.24, no.11 Pages: 888-890
  • Peer Reviewed
• [Journal Article] Direct intensity modulation and wireless data transmission characteristics of terahertz-oscillating resonant tunneling diodes (2012)
  • Author(s): K. Ishigaki, M. Shiraishi, S. Suzuki, M. Asada, N. Nishiyama, and S. Arai
  • Journal Title: Electron. Lett Volume: vol.48, no.10 Pages: 582-583
  • Peer Reviewed
• [Journal Article] Athermal Wavelength Filters toward Optical Interconnection to LSIs (2012)
  • Author(s): Y.Atsumi, M.Oda, J.H.Kang, N.Nishiyama, S.Arai
  • Journal Title: IEICE Transactions on Electronics Volume: E95-C Issue: 2 Pages: 229-236
  • DOI: 10.1587/transele.E95.C.229
  • NAID: 10030609915
  • ISSN: 0916-8524, 1745-1353
  • Peer Reviewed
• [Journal Article] Estimation of Transit Time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers (2012)
  • Author(s): A.Teranishi, S.Suzuki, K.Shizuno, M.Asada, H.Sugiyama, H.Yokoyama
  • Journal Title: IEICE Transactions on Electronics Volume: E95-C Issue: 3 Pages: 401-407
  • DOI: 10.1587/transele.E95.C.401
  • NAID: 10030610433
  • ISSN: 0916-8524, 1745-1353
  • Peer Reviewed
• [Journal Article] Fundamental oscillation up to 1.08THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay (2012)
  • Author(s): A.Teranishi, K.Shizuno, S.Suzuki, M.Asada, H.Sugiyama, H. Yokoyama
  • Journal Title: IEICE Electronics Express Volume: 9 Issue: 5 Pages: 385-390
  • DOI: 10.1587/elex.9.385
  • NAID: 130001922359
  • ISSN: 1349-2543
  • Peer Reviewed
• [Journal Article] Reduction of Output Conductance in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor Using Heavily Doped Drain Region (2012)
  • Author(s): H.Saito, Y.Miyamoto
  • Journal Title: Appl.Phys.Express Volume: vol.5 Issue: 2 Pages: 024101-024101
  • DOI: 10.1143/apex.5.024101
  • NAID: 10030155693
  • Peer Reviewed
• [Journal Article] GaIn AsP/InP Membrane Lasers for Optical Interconnects (2011)
  • Author(s): S. Arai, N. Nishiyama, T. Maruyama, and T. Okumura
  • Journal Title: IEEE J. Sel. Top. Quantum Electron Volume: vol.17, no.5 Pages: 1381-1389
  • Peer Reviewed
• [Journal Article] Lateral Current Injection Distributed Feedback Laser with Surface Grating Structure (2011)
  • Author(s): T. Shindo, T. Okumura, H. Ito, T. Koguchi, D. Takahashi, Y. Atsumi, J. Kang, R. Osabe, T. Amemiya, N. Nishiyama, and S. Arai
  • Journal Title: IEEE J. Sel. Top. Quantum Electron Volume: vol.17, no.5 Pages: 1175-1182
  • Peer Reviewed
• [Journal Article] Magnetic Interactions at Optical Frequencies in an InP-Based Waveguide Device with Metamaterial (2011)
  • Author(s): T.Amemiya, T.Shindo, D.Takahashi, N.Nishiyama, S.Arai
  • Journal Title: IEEE J.Quantum Electron Volume: Vol.47 Pages: 736-744
  • Peer Reviewed
• [Journal Article] Room-Temperature Continuous-Wave Operation of 1.3-μm Transistor Laser with AlGaInAs/InP Quantum Wells (2011)
  • Author(s): M.Shirao, T.Sato, Y.Takino, N.Sato, N.Nishiyama, S.Arai
  • Journal Title: Appl.Phys.Express Volume: Vol.4 Issue: 4 Pages: 3975-3982
  • DOI: 10.1364/oe.20.003983
  • NAID: 10029239379
  • Peer Reviewed
• [Journal Article] Nonunity permeability in metamaterial-based GaInAsP/InP multimode interferometers (2011)
  • Author(s): T.Amemiya, T.Shindo, D.Takahashi, S.Myoga, N.Nishiyama, S.Arai
  • Journal Title: Optics Lett. Volume: 36 Issue: 12 Pages: 2327-2329
  • DOI: 10.1364/ol.36.002327
  • Peer Reviewed
• [Journal Article] Regrowth Interface Quality Dependence on Thermal Cleaning of AlGaInAs/InP Buried-Heterostructure Lasers (2011)
  • Author(s): 瀧野祐太
  • Journal Title: Jpn.J.Appl.Phys. Volume: 50 Issue: 7R Pages: 070203-070203
  • DOI: 10.1143/jjap.50.070203
  • Peer Reviewed
• [Journal Article] Low-power-consumption High-eye-margin 10 Gbit/s Operation by GaInAsP/InP Distributed Reflector Lasers with Wirelike Active Regions (2011)
  • Author(s): S.Lee, D.Takahashi, T.Shindo, K.Shinno, T.Amemiya, N.Nishiyama, S.Arai
  • Journal Title: IEEE Photonics Technol.Lett. Volume: 23 Issue: 18 Pages: 1349-1351
  • DOI: 10.1109/lpt.2011.2160938
  • Peer Reviewed
• [Journal Article] Bonding and Photoluminescence Characteristics of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Waveguides by Surface Activated Bonding (2011)
  • Author(s): R.Osabe, T.Okumura, S.Kondo, N.Nishiyama, S.Arai
  • Journal Title: Jpn.J.Appl.Phys Volume: Vol.50 Issue: 8R Pages: 88005-88005
  • DOI: 10.1143/jjap.50.088005
  • NAID: 210000139428
  • Peer Reviewed
• [Journal Article] Lateral-Current-Injection Distributed Feedback Laser with Surface Grating Structure (2011)
  • Author(s): T.Shindo, T.Okumura, H.Ito, T.Koguchi, D.Takahashi, Y.Atsumi, J.Kang, R.Osabe, T Amemiya, N.Nishiyama, S.Arai
  • Journal Title: IEEE J.Sel.Top.Quantum Electron. Volume: 17 Issue: 5 Pages: 1175-1182
  • DOI: 10.1109/jstqe.2011.2131636
  • Peer Reviewed
• [Journal Article] GaInAsP/InP Membrane Lasers for Optical Interconnects (2011)
  • Author(s): S.Arai, N.Nishiyama, T.Maruyama, T.Okumura
  • Journal Title: IEEE J.Sel.Top.Quantum Electron. Volume: Vol.17(Invited) Issue: 5 Pages: 1381-1389
  • DOI: 10.1109/jstqe.2011.2128859
  • Peer Reviewed
• [Journal Article] Low-loss Amorphous Silicon Multilayer Waveguides Vertically Stacked on Silicon-on-Insulator Substrate (2011)
  • Author(s): J.H.Kang, Y.Atsumi, M.Oda, T.Amemiya, N.Nishiyama, S.Arai
  • Journal Title: Jpn.J.Appl.Phys. Volume: Vol.50 Issue: 12R Pages: 120208-120208
  • DOI: 10.1143/jjap.50.120208
  • Peer Reviewed
• [Journal Article] High Output Power (～400μW)Oscillators at around 550GHZ Using Resonant Tunneling Diodes with Graded Emitter and Thin Barriers (2011)
  • Author(s): M.Shiraishi, H.Shibayama, K.Ishigaki, S.Suzuki, M.Asada, H.Sugiyama, H.Yokoyama
  • Journal Title: Appl.Phys.Express Volume: vol.4 Issue: 6 Pages: 64101-64101
  • DOI: 10.1143/apex.4.064101
  • NAID: 10029000452
  • Peer Reviewed
• [Journal Article] Terahertz oscillators using electron devices - an approach with Resonant tunneling diodes (2011)
  • Author(s): M.Asada, S.Suzuki
  • Journal Title: IEICE Electronics Express Volume: 8 Issue: 14 Pages: 1110-1126
  • DOI: 10.1587/elex.8.1110
  • NAID: 130000959497
  • ISSN: 1349-2543
  • Peer Reviewed
• [Journal Article] Heterodyne Mixing of Sub-Terahertz Output Power from Two Resonant Tunneling Diodes Using InP Schottky BarrierDiode (2011)
  • Author(s): S.Suzuki, K.Karashima, K.Ishigaki, M.Asada
  • Journal Title: Jpn.J.Appl.Phys. Volume: vol.50 Issue: 8R Pages: 80211-80211
  • DOI: 10.1143/jjap.50.080211
  • NAID: 40018960973
  • Peer Reviewed
• [Journal Article] High Uniformity InP-Based Resonant Tunneling Diode Wafers with Peak Current Density of over 6×10^5 A/cm^2 Grown by Metal-Organic Vapor-Phase Epitaxy (2011)
  • Author(s): H.Sugiyama, A.Teranishi, S.Suzuki, M.Asada
  • Journal Title: J.Crystal Growth Volume: Vol.336 Issue: 1 Pages: 24-28
  • DOI: 10.1016/j.jcrysgro.2011.09.010
  • Peer Reviewed
• [Journal Article] 電子デバイスによるテラヘルツ光源 (2011)
  • Author(s): 浅田雅洋、鈴木左文
  • Journal Title: 電気学会論文誌A(基礎・材料共通) Volume: Vol.131-A Pages: 21-25
• [Journal Article] 高精度結晶成長技術による共鳴トンネルダイオードテラヘルツ発振器の実現 (2011)
  • Author(s): 杉山弘樹, 鈴木左文, 浅田雅洋
  • Journal Title: NTT技術ジャーナル Volume: vol.23 Pages: 12-17
• [Journal Article] Deviation from Proportional Relationship between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operationg at High Current Dentity (2011)
  • Author(s): M.Yamada, T.Uesawa, Y.Miyamoto, K. Furuya
  • Journal Title: IEEE Electron Device Lett Volume: vol.32 Issue: 4 Pages: 491-493
  • DOI: 10.1109/led.2011.2107497
  • Peer Reviewed
• [Journal Article] InP/InGaAs Composite MOSFETs with Regrown Source andAl_2O_3gate dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm (2011)
  • Author(s): R.Terao, T.Kanazawa, S.Ikeda, Y.Yonai, A.Kato, Y.Miyamoto
  • Journal Title: Appl.Phys.Express Volume: vol.4 Issue: 5 Pages: 054201-054201
  • DOI: 10.1143/apex.4.054201
  • Peer Reviewed
• [Journal Article] Fabrication of InP/InGaAs DHBTs with Buried SiO2 Wires (2011)
  • Author(s): N.Takebe, T.Kobayashi, H.Suzuki, Y.Miyamoto, K.Furuya
  • Journal Title: IEICE Transactions on Electronics Volume: E94-C Issue: 5 Pages: 830-834
  • DOI: 10.1587/transele.E94.C.830
  • NAID: 10029506179
  • ISSN: 0916-8524, 1745-1353
  • Peer Reviewed
• [Journal Article] GaInAsP/InP Lateral-Current-Injection Distributed Feedback Laser with a-Si Surface Grating (2011)
  • Author(s): T.Shindo, T.Okumura, H.Ito, T.Koguchi, D.Takahashi, Y.Atsumi, J.Kang, R.Osabe, T.Amemiya, N.Nishiyama, S.Arai
  • Journal Title: Opt.Express Volume: vol.19 Pages: 1884-1891
  • Peer Reviewed
• [Journal Article] Lateral Junction Waveguide-type Photodiode Grown on Semi-insulating InP Substrate (2011)
  • Author(s): T.Okumura.D.Kondo, H.Ito, S.H.Lee, T.Amemiya, N.Nishiyama, S.Arai
  • Journal Title: Jpn.J.Appl.Phys. Volume: vol.50
  • NAID: 40018283282
  • Peer Reviewed
• [Journal Article] Large-Signal Analysis of a Transistor Laser (2011)
  • Author(s): M.Shirao, S.Lee, N.Nishiyama, S.Arai
  • Journal Title: IEEE J.Quantum Electron. Volume: vol.47 Pages: 359-367
  • Peer Reviewed
• [Journal Article] Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with High Current Density (2011)
  • Author(s): H.Saito
  • Journal Title: Jpn.J.Appl.Phys. Volume: vol.50
  • Peer Reviewed
• [Journal Article] 電子デバイスによるテラヘルツ光源 (2011)
  • Author(s): 浅田雅洋
  • Journal Title: 電気学会論文誌A(基礎・材料共通) Volume: vol.131-A Pages: 21-25
• [Journal Article] Deviation From Proportional Relationship Between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density (2011)
  • Author(s): M.Yamada
  • Journal Title: IEEE Electron Device Lett. Volume: vol.32 Pages: 491-493
  • Peer Reviewed
• [Journal Article] シリコン/III-V族半導体ハイブリッド集積光デバイス (2011)
  • Author(s): 西山伸彦
  • Journal Title: 月刊OPTRONICS Volume: 2011年2月号 Pages: 117-120
• [Journal Article] Fabrication and Characterization of Amorphous Polyethylene Terephthalate Optical Waveguides (2011)
  • Author(s): K.Iiyama
  • Journal Title: Photon.Technol.Lett. Volume: 23 Pages: 275-277
  • Peer Reviewed
• [Journal Article] Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature (2010)
  • Author(s): S. Suzuki, M. Asada, A. Teranishi, H. Sugiyama, and H. Yokoyama
  • Journal Title: Appl. Phys. Lett Volume: vol.97, no.24
  • Peer Reviewed
• [Journal Article] Continuous Wave Operation of Thin Film Lateral Current Injection Lasers Grown on Semi-insulating InP. (2010)
  • Author(s): T. Okumura, H. Ito, D. Kondo, N. Nishiyama, S. Arai
  • Journal Title: Jpn. J. Appl. Phys Volume: vol.49, no.4 Pages: 40205-40205
  • Peer Reviewed
• [Journal Article] Fundamental Oscillation of up to 915 GHz in Small-Area In GaAs/AlAs Resonant Tunneling Diodes with Planar Slot Antennas (2010)
  • Author(s): M. Shiraishi, S. Suzuki, A. Teranishi, M. Asada
  • Journal Title: Jpn. J. Appl. Phys Volume: vol.49, no.2 Pages: 20211-20211
  • Peer Reviewed
• [Journal Article] Continuous Wave Operation of Thin Film Lateral Current Injection Lasers Grown on Semi-Insulating InP Substrate (2010)
  • Author(s): T.Okumura, H.Ito, D.Kondo, N.Nishiyama, S.Arai
  • Journal Title: Jpn.J.Appl.Phys. Volume: vol.49
  • NAID: 40017085031
  • Peer Reviewed
• [Journal Article] Athermal Wavelength Characteristics of Si Slot Ring Resonator Embedded with Benzocyclobutene for Optoelectronic Integrated Circuits (2010)
  • Author(s): Y.Atsumi, K.Inoue, N.Nishiyama, S.Arai
  • Journal Title: Jpn.J.Appl.Phys. Volume: vol.49
  • NAID: 40017116072
  • Peer Reviewed
• [Journal Article] Bandwidth enhancement of injection-locked distributed reflector lasers with wirelike active regions (2010)
  • Author(s): S.H.Lee, D.Parekh, T.Shindo, W.Yang, P.Guo, D.Takahashi, N.Nishiyama, C.J.Chang-Hasnain, S.Arai
  • Journal Title: Opt.Express Volume: vol.18 Pages: 16370-16378
  • Peer Reviewed
• [Journal Article] Extremely High Peak Current Densities of over 1×10^6A/cm^2 in InP-Based InGaAs/AlAs Resonant Tunneling Diodes Grown by Metal-Organic Vapor-Phase Epitaxy (2010)
  • Author(s): H.Sugiyama
  • Journal Title: Jpn.J.Appl.Phys. Volume: vol.49
  • Peer Reviewed
• [Journal Article] Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector (2010)
  • Author(s): Y.Miyamoto
  • Journal Title: IEICE Trans.Electron. Volume: vol.E93-C Pages: 644-647
  • NAID: 10026825631
  • Peer Reviewed
• [Journal Article] Fundamental oscillations at～900GHz with low bias voltages in RTDs with spike-doped structures (2010)
  • Author(s): S.Suzuki
  • Journal Title: Electron.Lett. Volume: vol.46 Pages: 1006-1007
  • Peer Reviewed
• [Journal Article] Fabrication of Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with a 15-nm-wide Mesa Structure and a Drain Current Density of 7 MA/cm^2 (2010)
  • Author(s): H.Saito
  • Journal Title: Appl.Phys.Express Volume: vol.3
  • Peer Reviewed
• [Journal Article] Theoretical analysis of spectral linewidth of terahertz oscillators using resonant tunneling diodes and their coupled arrays (2010)
  • Author(s): M.Asada
  • Journal Title: J.Appl.Phys. Volume: vol.108
  • Peer Reviewed
• [Journal Article] Submicron InP/InGaAs Composite-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Selectively Regrown n^+-Source (2010)
  • Author(s): T.Kanazawa
  • Journal Title: Appl.Phys.Express Volume: vol.3
  • Peer Reviewed
• [Journal Article] 極微細ヘテロ接合トランジスタ (2010)
  • Author(s): 宮本恭幸
  • Journal Title: 応用物理 Volume: 第79巻 Pages: 1010-1013
  • Peer Reviewed
• [Journal Article] Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature (2010)
  • Author(s): S.Suzuki
  • Journal Title: Appl.Phys.Lett. Volume: vol.97
  • Peer Reviewed
• [Journal Article] Hole-Injection-Type and Electron-Injection-Type Silicon Avalanche Photodiodes Fabricated by Standard 0.18μm CMOS Process (2010)
  • Author(s): K.Iiyama
  • Journal Title: Photon.Technol.Lett. Volume: 22 Pages: 932-934
  • Peer Reviewed
• [Journal Article] Continuous Wave Operation of Thin Film Lateral Current Injection Lasers Grown on Semi-insulating InP (2010)
  • Author(s): T. Okumura, H. Ito, D. Kondo, N. Nishiyama, S. Arai
  • Journal Title: Jpn. J. Appl. Phys. vol.49,no.4 Pages: 40205-40205
• [Journal Article] Fundamental Oscillation of up to 915 GHz in Small-Area InGaAs/AlAs Resonant Tunneling Diodes with Planar Slot Antennas (2010)
  • Author(s): M. Shiraishi, S. Suzuki, A. Teranishi, M. Asada
  • Journal Title: Jpn. J. Appl. Phys. vol.49,no.2 Pages: 20211-20211
  • NAID: 40016982478
• [Journal Article] Sub-Terahertz Resonant Tunneling Diode Oscillators with High Output Power(～200μW)Using Offset-Fed Slot Antenna and High Current Density (2010)
  • Author(s): K.Hinata, M.Shiraishi, S.Suzuki, M.Asada, H.Sugiyama, H.Yokoyama
  • Journal Title: Appl.Phys.Exp. vol.3
  • NAID: 10027013068
  • Peer Reviewed
• [Journal Article] Measurement of Oscillation Frequency and Spectral Linewidth of Sub-Terahertz InP-Based Resonant Tunneling Diode Oscillators Using Ni-InP Schottky Barrier Diode (2010)
  • Author(s): K.Karashima, R.Yokoyama, M.Shiraishi, S.Suzuki, S.Aoki, M.Asada
  • Journal Title: Jpn.J.Appl.Phys. Vol.49
  • NAID: 210000067885
  • Peer Reviewed
• [Journal Article] Fundamental Oscillation of up to 915GHz in Small-Area InGaAs/AlAs Resonant Tunneling Diodes with Planar Slot Antennas (2010)
  • Author(s): M.Shiraishi, S.Suzuki, A.Teranishi, M.Asada, H.Sugiyama, H.Yokoyama
  • Journal Title: Jpn.J.Appl.Phys. vol.49
  • NAID: 40016982478
  • Peer Reviewed
• [Journal Article] Monte Carlo Analysis of Base Transit Times of InP/GaInAs Heterojunction Bipolar Transistors with Ultrathin Graded Bases (2010)
  • Author(s): T.Uesawa, M.Yamada, Y.Miyamoto, K.Furuya
  • Journal Title: Jpn.J.Appl.Phys. vol.49
  • NAID: 40016982521
  • Peer Reviewed
• [Journal Article] Mach-Zehnder Interferometric Optical Switch with MEMS Phase shifter (2010)
  • Author(s): M.Inamoto
  • Journal Title: Opt.Quantum Electron. Vol.41
  • Peer Reviewed
• [Journal Article] Hole-injection-type and Electron-injection-type Silicon Avalanche Photodiodes Fabricated by Standard 0.18μm CMOS Process (2010)
  • Author(s): K.Iiyama
  • Journal Title: IEEE Photon.Technol.Lett. Vol.22
  • Peer Reviewed
• [Journal Article] Injection-Type Gain Asp-InP-Si Distributed-Feedback Laser Directly Bonded on Silicon-on-Insulator Substrate (2009)
  • Author(s): T. Okumura, T. Maruyama, H. Yonezawa, N. Nishiyama, S. Arai
  • Journal Title: IEEE Photon. Technol. Lett Volume: vol.21, no.5 Pages: 283-285
  • Peer Reviewed
• [Journal Article] Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain (2009)
  • Author(s): H. Saito, Y. Miyamoto, and K. Furuya
  • Journal Title: Appl. Phys. Express Volume: vol.2, no.3 Pages: 34501-34501
  • NAID: 10025085180
  • Peer Reviewed
• [Journal Article] Injection-Type GaInAsP-InP-Si Distributed-Feedback Laser Directly Bonded on Silicon-on-Insulator Substrate (2009)
  • Author(s): T. Okumura, T. Maruyama, H. Yonezawa, N. Nishiyama, S. Arai
  • Journal Title: IEEE Photon. Elec. Lett. vol.21,no.5 Pages: 283-285
• [Journal Article] Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain (2009)
  • Author(s): H. Saito, Y. Miyamoto, K. Furuya
  • Journal Title: Applied Physics Express vol.2,no.3 Pages: 34501-34501
  • NAID: 10025085180
• [Journal Article] Lateral Current Injection GaInAsP/InP Laser on Semi-insulating Substrate for Membrane-based Photonic Circuits (2009)
  • Author(s): T.Okumura, M.Kurokawa, M.Shirao, D.Kondo, H.Ito, T.Maruyama, N.Nishiyama, S.Arai
  • Journal Title: Opt.Express Vol.17 Pages: 12564-12570
  • NAID: 120001631772
  • Peer Reviewed
• [Journal Article] GaInAsP/InP Quantum-Wire Lasers (2009)
  • Author(s): S.Arai, T.Maruyama
  • Journal Title: IEEE J.Select.Topics in Quantum Electron Vol.15 Pages: 731-742
  • NAID: 120002829209
  • Peer Reviewed
• [Journal Article] Low-Threshold and High-Efficiency Operation of Distributed Reflector Laser With Wirelike Active Regions (2009)
  • Author(s): T.Shindo, S.Lee, D.Takahashi, N.Tajima, N.Nishiyama, S.Arai
  • Journal Title: IEEE Photon.Technol.Lett. Vol.21 Pages: 1414-1416
  • Peer Reviewed
• [Journal Article] High Optical-Feedback Tolerance of Distributed Reflector Lasers with Wirelike Active Regions for Isolator-Free Operation (2009)
  • Author(s): S.Lee, N.Tajima, T.Shindo, D.Takahashi, N.Nishiyama, S.Arai
  • Journal Title: IEEE Photon.Technol.Lett. Vol.21 Pages: 1529-1531
  • Peer Reviewed
• [Journal Article] Preliminary Experiment for Direct Media Conversion to Sub-Terahertz Wave Signal from 1.55-μm Optical Signal Using Photon-generated Free Carriers (2009)
  • Author(s): M.Shirao, Y.Numajiri, R.Yokoyama, N.Nishiyama, M.Asada, S.Arai
  • Journal Title: Jpn.J.Appl.Phys. Vol.48
  • Peer Reviewed
• [Journal Article] Sub- Terahertz resonant Tunneling Diode Oscillators Integrated with tapered Slot Antennas for Horizontal Radiation (2009)
  • Author(s): K.Urayama, S.Aoki, S.Suzuki, M.Asada, H.Sugiyama, H.Yokoyama
  • Journal Title: Appl.Phys.Exp. vol.2
  • NAID: 10025085805
  • Peer Reviewed
• [Journal Article] Terahertz Sources Using Electron Devices (2009)
  • Author(s): M.Asada
  • Journal Title: KEC JOHO No.209 Pages: 17-22
• [Journal Article] Fundamental Oscillation of up to 831GHz in GaInAs/AlAs Resonant Tunneling Diode (2009)
  • Author(s): S.Suzuki, A.Teranishi, K.Hinata, M.Asada, H.Sugiyama, H.Yokoyama
  • Journal Title: Appl.Phys.Exp. vol.2
  • NAID: 10025086139
  • Peer Reviewed
• [Journal Article] Analysis of Terahertz Oscillator Using Negative Differential Resistance Dual-Channel Transistor and Integrated Antenna (2009)
  • Author(s): K.Furuya, O.Numakami, N.Yagi, S.Hori, T.Sugaya, K.Komori, M.Mori, Y.Okano, H.Muguruma, M.Asada
  • Journal Title: Jpn.J.Appl.Phys. vol.48
  • NAID: 210000066657
  • Peer Reviewed
• [Journal Article] Injection-type GaInAsP/InP/Si Distributed-feedback Laser Directly Bonded on Silicon-on-insulator Substrate (2009)
  • Author(s): T. Okumura
  • Journal Title: IEEE Photon. Technol. Lett vol.21 Pages: 283-285
  • Peer Reviewed
• [Journal Article] Loss Reduction of Si Wire Waveguide Fabricated by Edge-Enhancement Writing for Electron Beam Lithography and Reactive Ion Etching Using Double Layered Resist Mask with C_<60> (2009)
  • Author(s): K. Inoue
  • Journal Title: Jpn. J. Appl. Phys vol.48
  • Peer Reviewed
• [Journal Article] Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain (2009)
  • Author(s): H. Saito
  • Journal Title: Applied Physics Express vol.2
  • Peer Reviewed
• [Journal Article] Resonant Tunneling Diodes for Sub-Terahertz and Terahertz Oscillators (2008)
  • Author(s): M. Asada, S. Suzuki, and N. Kishimoto
  • Journal Title: Jpn. J. Appl. Phys Volume: vol.47, no.6 Pages: 4375-4384
  • Peer Reviewed
• [Journal Article] Resonant Tunneling Diodes for Sub-Terahertz and Terahertz Oscillators (2008)
  • Author(s): M. Asada, S. Suzuki, N. Kishimoto
  • Journal Title: Jpn. J. Appl. Phys. vol.47,no.6(Invited) Pages: 4375-4384
• [Journal Article] GaInAsP/InP distributed reflector lasers and integration of front power monitor by using lateral quantum confinement effect (2008)
  • Author(s): S. M. Ullah
  • Journal Title: Jpn. J. Appl. Phys vol.47 Pages: 4558-4565
  • Peer Reviewed
• [Journal Article] Polarization anisotropy of spontaneous emission spectra in GaInAsP/InP auantum-wire structures (2008)
  • Author(s): D. Plumwongrot
  • Journal Title: Jpn. J. Appl. Phys vol.47 Pages: 3735-3741
  • Peer Reviewed
• [Journal Article] Resonant Tunneling Diodes for Sub-Terahertz and Terahertz Oscillators (2008)
  • Author(s): M. Asada
  • Journal Title: Jpn. J. Appl. Phys vol.47 Pages: 4375-4384
  • Peer Reviewed
• [Journal Article] Frequency Increase of Resonant Tunneling Diode Oscillators in Sub-THz and THz Range Using Thick Spacer Layers (2008)
  • Author(s): N. Kishimoto
  • Journal Title: Applied Phys. Express vol.1
  • Peer Reviewed
• [Journal Article] Theoretical Analysis of Coupled Oscillator Array Using Resonant Tunneling Diodes in Subterahertz and Terahertz Range (2008)
  • Author(s): M. Asada
  • Journal Title: J. Appl. Phys. vol. 103
  • Peer Reviewed
• [Journal Article] Coherent Power Combination in Multi-Element Sub-Terahertz Resonant Tunneling Diode Oscillators Coupled with Metal-Insulator-Metal Stub Structure (2008)
  • Author(s): S. Suzuki
  • Journal Title: Applied Phys. Express vol.1
  • Peer Reviewed
• [Journal Article] An Analysis of Antenna Integrated THz Oscillator Using a Negative Differential Resistance Transistor (2008)
  • Author(s): K. Furuya
  • Journal Title: IEICE Trans. Commun vol.E91-B Pages: 1800-1805
  • Peer Reviewed
• [Journal Article] Polarization Anisotropy of Spontaneous Emission Spectra in GaInAsP/InP Quantum-Wire Structures (2008)
  • Author(s): D. Plumwongrot
  • Journal Title: Jpn. J. Appl. Phys. Vol.47 Pages: 3735-3741
  • Peer Reviewed
• [Journal Article] GaInAsP/InP Distributed Reflector Lasers and Integration of Front Power Monitor by Using Lateral Quantum Confinement Effect (2008)
  • Author(s): S. M. Ullah
  • Journal Title: Jpn. J. Appl. Phys. Vol.47 Pages: 4558-4565
  • Peer Reviewed
• [Journal Article] Cutoff Frequency Characteristics of Gate-Control Hot Electron Transistors by Monte Carlo Simulation (2008)
  • Author(s): M. Igarashi
  • Journal Title: Physica Status Solidi (C) vol.5 Pages: 70-70
  • Peer Reviewed
• [Journal Article] Experiment and theory of the dependence of oscillation characteristics on structure of integrated slot antennas in sub-THz and THz oscillating resonant tunneling diodes (2008)
  • Author(s): S. Suzuki
  • Journal Title: Jpn. J. Appl. Phys. Vol.47 Pages: 64-67
  • Peer Reviewed
• [Journal Article] Low-Threshold Current Density GaInAsP/InP Quantum-Wire Distributed Feedback Lasers Fabricated by Low-Damage Processes (2007)
  • Author(s): Y. Nishimoto
  • Journal Title: Jpn. J. Appl. Phys. vol.46
  • Peer Reviewed
• [Journal Article] High T_0 Operation of 1590 nm GaInAsP/InP Quantum-Wire Distributed Feedback Lasers by Bragg Wavelength Detuning (2007)
  • Author(s): Y. Nishimoto
  • Journal Title: Jpn. J. Appl. Phys vol.46
  • Peer Reviewed
• [Journal Article] Very High Electric Isolation Resistance between Distributed Reflector Laser and Front Power Monitor through Deeply Etched Naroow Groove (2007)
  • Author(s): S. Lee
  • Journal Title: Jpn. J. Appl. Phys. vol.46
  • Peer Reviewed
• [Journal Article] Low-Threshold-Current Operation of High-Mesa Stripe Distributed Reflector Laser Emitting at 1540 nm (2007)
  • Author(s): S. M. Ullah
  • Journal Title: Jpn. J. Appl. Phys. vol.46
  • Peer Reviewed
• [Journal Article] Bragg Wavelength Detuning in GaInAsP/InP Distributed Feedback Lasers with Wirelike Active Regions (2007)
  • Author(s): D. Plumwongrot
  • Journal Title: Jpn. J. Appl. Phys vol.46
  • Peer Reviewed
• [Journal Article] Reduced Temperature Dependence of Lasing Wavelength in Membrane Buried Heterostructure DFB Lasers with Polymer Cladding Layers (2007)
  • Author(s): S. Sakamoto
  • Journal Title: IEEE Photon. Technol. Lett vol.19 Pages: 291-293
  • Peer Reviewed
• [Journal Article] Strongly Index-Coupled Membrane BH-DFB Lasers With Surface Corrugation Grating (2007)
  • Author(s): S. Sakamoto
  • Journal Title: IEEE J. Select. Topics Quantum Electron vol.13 Pages: 1135-1141
  • Peer Reviewed
• [Journal Article] 85℃ Continuous-Wave Operation of GaInAsP/InP-Membrane Buried Heterostructure Distributed Feedback Lasers with Polymer Cladding Layer (2007)
  • Author(s): S. Sakamoto
  • Journal Title: Jpn. J. Appl. Phys. vol.46
  • Peer Reviewed
• [Journal Article] GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Air-Bridge Structure (2007)
  • Author(s): H. Naitoh
  • Journal Title: Jpn. J. Appl. Phys. vol.46
  • Peer Reviewed
• [Journal Article] Single-Mode Operation of GaInAsP/InP-Membrane Distributed Feedback Lasers Bonded on Silicon-on-Insulator Substrate with Rib-Waveguide Structure (2007)
  • Author(s): T. Okumura
  • Journal Title: Jpn. J. Appl. Phys. vol.46
  • Peer Reviewed
• [Journal Article] Proposal of Resonant Tunneling Diode Oscillators with Offset-Fed Slot Antennas in Terahertz and Sub-Terahertz Range (2007)
  • Author(s): S. Suzuki
  • Journal Title: Jpn. J. Appl. Phys. Vol.46 Pages: 119-121
  • Peer Reviewed
• [Journal Article] Increase of collector current in hot electron transistors controlled by gatebias (2007)
  • Author(s): Suwa
  • Journal Title: Jpn. J. Appl. Phys. vol.46 Pages: 202-204
  • Peer Reviewed
• [Journal Article] Voltage-Controlled Harmonic Oscillation at About 1 THz in Resonant Tunneling Diodes Integrated with Slot Antennas (2007)
  • Author(s): M. Asada
  • Journal Title: Jpn. J. Appl. Phys. Vol.46 Pages: 2904-2906
  • NAID: 40015357697
  • Peer Reviewed
• [Journal Article] InP/InGaAs hot electron transistors with insulated gate (2007)
  • Author(s): A. Suwa
  • Journal Title: Jpn. J. Appl. Phys. vol.46
  • Peer Reviewed
• [Journal Article] Numerical Analysis of the Effect of P-Regions on the I-V Kink in GaAs MESFETs (2007)
  • Author(s): K. Nishihori
  • Journal Title: Trans. IECE of Japan vol.E90-C Pages: 1643-1649
  • Peer Reviewed
• [Journal Article] Coherent Power Combination in Highly Integrated Resonant Tunneling Diode Oscillators with Slot Antennas (2007)
  • Author(s): S. Suzuki
  • Journal Title: Jpn. J. Appl. Phys. Vol.46
  • Peer Reviewed
• [Presentation] 金属側壁層有するInP系プラズモニック導波路の作製評価,電気情報通信学会 (2012)
  • Author(s): 村井英淳
  • Organizer: 電子情報通信学会2012年総合大会
  • Place of Presentation: 岡山
  • Year and Date: 2012-03-23
• [Presentation] 多層アモルファスシリコン細線導波路間の信号伝送用グレーティングカプラ (2012)
  • Author(s): 姜〓〓
  • Organizer: 電子情報通信学会2012年総合大会
  • Place of Presentation: 岡山
  • Year and Date: 2012-03-22
• [Presentation] 温度無依存B埋め込みSiスロットリング共振器を用いたドロップフィルタ (2012)
  • Author(s): 小田学
  • Organizer: 電子情報通信学会2012年総合大会
  • Place of Presentation: 岡山
  • Year and Date: 2012-03-22
• [Presentation] 横方向電流注入型半導体薄膜レーザの直接変調帯域の検討 (2012)
  • Author(s): 進藤隆彦
  • Organizer: 電子情報通信学会2012年総合大会
  • Place of Presentation: 岡山
  • Year and Date: 2012-03-21
• [Presentation] ブロッホ波干渉型低損失連結クロス導波路の作製評価 (2012)
  • Author(s): 渥美裕樹
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 東京
  • Year and Date: 2012-03-18
• [Presentation] スロット導波路と方向性結合器の関係 (2012)
  • Author(s): 森野久康
  • Organizer: 第59回応用物理学会関係連合講演会
  • Place of Presentation: 東京
  • Year and Date: 2012-03-18
• [Presentation] BCB貼り付け法によるSi基板上GaInAsP細線1×2 MMIの作製 (2012)
  • Author(s): 李智恩
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 東京
  • Year and Date: 2012-03-17
• [Presentation] チップ内光配線に向けた横接合導波路型GaInAsフォトダイオードの10Gb/s動作 (2012)
  • Author(s): 小口貴之
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 東京
  • Year and Date: 2012-03-17
• [Presentation] 狭井戸共鳴トンネルダイオードによるテラヘルツ発振素子の高出力化 (2012)
  • Author(s): 金谷英敏
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 東京
  • Year and Date: 2012-03-17
• [Presentation] ボウタイアンテナ集積型Ni-InP SBDのカットオフ周波数向上と感度測定 (2012)
  • Author(s): 丸山薫
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 東京
  • Year and Date: 2012-03-17
• [Presentation] InPエッチング異方性による微細InGaAsチャネルMOSFET (2012)
  • Author(s): 米内義晴
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 東京
  • Year and Date: 2012-03-17
• [Presentation] 1.3μm帯npn-AlGaInAs/InPトランジスタレーザの室温連続動作 (2012)
  • Author(s): 佐藤孝司
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 東京
  • Year and Date: 2012-03-16
• [Presentation] GaInAs/InP半導体上メタマテリアルにおける共振波長変化の金属膜厚依存性 (2012)
  • Author(s): 明賀聖慈
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 東京
  • Year and Date: 2012-03-16
• [Presentation] 横方向電流注入型レーザの内部量子効率向上 (2012)
  • Author(s): 信野圭祐
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 東京
  • Year and Date: 2012-03-16
• [Presentation] 0.35mmBiCMOSプロセスによるSi-APDの特性評価 (2012)
  • Author(s): 前北和晃
  • Organizer: 第59回応用物理学会関係連合講演会
  • Place of Presentation: 東京
  • Year and Date: 2012-03-16
• [Presentation] CMOS-APDの青色波長帯での受光特性 (2012)
  • Author(s): 霜鳥敏之
  • Organizer: 第59回応用物理学会関係連合講演会
  • Place of Presentation: 東京
  • Year and Date: 2012-03-16
• [Presentation] Nd3+錯体を添加したポリスチレン光導波路の発光特性 (2012)
  • Author(s): 寺澤佳大
  • Organizer: 第59回応用物理学会関係連合講演会
  • Place of Presentation: 東京
  • Year and Date: 2012-03-16
• [Presentation] ITOバッファ層を用いたSi基板上PZT,PLZT薄膜の作製と評価 (2012)
  • Author(s): 松本真輝
  • Organizer: 第59回応用物理学会関係連合講演会
  • Place of Presentation: 東京
  • Year and Date: 2012-03-16
• [Presentation] テラヘルツ発振器に集積可能な光-テラヘルツ信号直接変換器の設計 (2012)
  • Author(s): 武大助
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 東京
  • Year and Date: 2012-03-15
• [Presentation] エピタキシャル成長ソースによるInGaAs MOSFETの高電流密度化 (2012)
  • Author(s): 宮本恭幸
  • Organizer: 電気学会電子デバイス研究会
  • Place of Presentation: 熱海
  • Year and Date: 2012-03-08
• [Presentation] 共鳴トンネルダイオードによる室温テラヘルツ光源 (2012)
  • Author(s): M.Asada
  • Organizer: 電気学会パワー半導体光源とその応用技術調査専門委員会
  • Place of Presentation: 東京
  • Year and Date: 2012-02-20
• [Presentation] THz Oscillation of Resonant Tunneling Diode and Its Basic Properties for Wireless Transmission (2012)
  • Author(s): 浅田雅洋
  • Organizer: テラヘルツ応用システム研究会
  • Place of Presentation: 東京
  • Year and Date: 2012-02-10
• [Presentation] Room-Temperature Terahertz Oscillation of Resonant Tunneling Diodes and Preliminary Experiments on Wireless Communication Application (2011)
  • Author(s): M.Asada
  • Organizer: Japan-Korea Joint Workshop
  • Place of Presentation: Nagoya
  • Year and Date: 2011-12-19
• [Presentation] アモルファスシリコンを用いた多層光導波路作製法の検討 (2011)
  • Author(s): 姜〓〓
  • Organizer: 電子情報通信学会光エレクトロニクス研究会
  • Place of Presentation: 東京
  • Year and Date: 2011-12-16
• [Presentation] 表面活性化接合によるAlInAs酸化狭窄型GaInAsP/Siハイブリッドレーザの検討 (2011)
  • Author(s): 長部亮
  • Organizer: 電子情報通信学会 レーザ・量子エレクトロニクス研究会
  • Place of Presentation: 東京
  • Year and Date: 2011-12-16
• [Presentation] InGaAs MOSFETの高電流密度化 (2011)
  • Author(s): 宮本恭幸
  • Organizer: 電子デバイス研究会(ED)
  • Place of Presentation: 仙台
  • Year and Date: 2011-12-14
• [Presentation] Membrane InP-based Lasers and Related Devices for On-chip Interconnects (2011)
  • Author(s): N. Nishiyama and S. Arai
  • Organizer: 2011 IEEE Photonics Conference(IPC-2011), Arlington, USA, WA3
  • Year and Date: 2011-12-10
• [Presentation] High Drain Current (>2A/mm) InGaAs channel MOSFET at V_D=0.5 V with Shrinkage of Channel Length by InP Anisotropic Etching (2011)
  • Author(s): Y.Yonai
  • Organizer: 2011 Int.Electron Device Meeting (IEDM 2011)
  • Place of Presentation: Washington, USA
  • Year and Date: 2011-12-06
• [Presentation] THz Oscillating Resonant Tunneling Diode and Its Basic Properties for Wireless Communications (2011)
  • Author(s): M.Asada
  • Organizer: Terahertz Nano-Science & Workshop on Int.Terahertz Research Network
  • Place of Presentation: Osaka
  • Year and Date: 2011-11-28
• [Presentation] Wireless Data Transmission at ～560 GHz with Direct Modulation of RTD Oscillator (2011)
  • Author(s): K.Ishigaki
  • Organizer: Terahertz Nano-Science & Workshop on Int.Terahertz Research Network
  • Place of Presentation: Osaka
  • Year and Date: 2011-11-28
• [Presentation] 幅広ギャップを有するBCB埋め込み温度無依存Siスロット導波路波長フィルタ (2011)
  • Author(s): 小田学
  • Organizer: 第16回シリコンフォトニクス研究会
  • Place of Presentation: 東京
  • Year and Date: 2011-11-25
• [Presentation] 光インターコネクションに向けた低損失GaInAsP細線導波路の実現 (2011)
  • Author(s): 李智恩
  • Organizer: 第16回シリコンフォトニクス研究会
  • Place of Presentation: 東京
  • Year and Date: 2011-11-25
• [Presentation] GaInAsP/InP横方向電流注入型メンブレンDFBレーザの低しきい値動作化 (2011)
  • Author(s): 二見充輝
  • Organizer: 第16回シリコンフォトニクス研究会
  • Place of Presentation: 東京
  • Year and Date: 2011-11-25
• [Presentation] SOI基板上多層アモルファスシリコン導波路の低損失伝搬特性 (2011)
  • Author(s): 姜〓〓
  • Organizer: 第16回シリコンフォトニクス研究会
  • Place of Presentation: 東京
  • Year and Date: 2011-11-25
• [Presentation] 表面活性化接合法によるAlInAs酸化狭窄型GaInAsP/SOIハイブリッドレーザの検討 (2011)
  • Author(s): 長部亮
  • Organizer: 第16回シリコンフォトニクス研究会
  • Place of Presentation: 東京
  • Year and Date: 2011-11-25
• [Presentation] ポリシリコン光検出器のサブGHz応答 (2011)
  • Author(s): 乙坂英志
  • Organizer: 電子情報通信学会シリコンフォトニクス研究会
  • Place of Presentation: 東京
  • Year and Date: 2011-11-25
• [Presentation] 活性層にIr(ppy)3を用いた緑色帯有機VCSELの提案 (2011)
  • Author(s): 上木孝司
  • Organizer: 第13回有機EL討論会
  • Place of Presentation: 大阪
  • Year and Date: 2011-11-21
• [Presentation] ITOバッファ層を用いたSi基板上PZT,PLZT薄膜の作製と評価 (2011)
  • Author(s): 松本真輝
  • Organizer: 応用物理学会北陸・信越支部学術講演会
  • Place of Presentation: 金沢
  • Year and Date: 2011-11-18
• [Presentation] SOI基板への金属-半導体-金属光検出器の作製 (2011)
  • Author(s): 田堅
  • Organizer: 応用物理学会北陸・信越支部学術講演会
  • Place of Presentation: 金沢
  • Year and Date: 2011-11-18
• [Presentation] Development of High Resolution FMCW Sensing System by Using a Single-mode Vertical Cavity Surface Emitting Laser (VCSEL) (2011)
  • Author(s): Pakkaporn Ratanachaijaroen
  • Organizer: 応用物理学会北陸・信越支部学術講演会
  • Place of Presentation: 金沢
  • Year and Date: 2011-11-18
• [Presentation] アモルファスシリコン回折格子を用いた垂直方向結合器の設計 (2011)
  • Author(s): 李根
  • Organizer: 応用物理学会北陸・信越支部学術講演会
  • Place of Presentation: 金沢
  • Year and Date: 2011-11-18
• [Presentation] 共鳴トンネルダイオードの基本波1THz室温発振 (2011)
  • Author(s): 浅田雅洋
  • Organizer: 第2回集積光デバイスと応用技術時限研究専門委員会(IPDA)研究会
  • Place of Presentation: 東京
  • Year and Date: 2011-11-16
• [Presentation] Si-based Optical Devices toward On-Chip Interconnection and One-Chip Router-Athermal, Amorphous, and III-V on Si (2011)
  • Author(s): N.Nisiyama
  • Organizer: The 1st International Symposium on Photonics and Electronics Convergence, ISPEC2011
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-11-14
• [Presentation] GaInAsP/InP Lateral-Current-Injection Membrane DFB Laser with Surface Grating Structure (2011)
  • Author(s): T.Shindo
  • Organizer: The 1st International Symposium on Photonics and Electronics Convergence, ISPEC2011
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-11-14
• [Presentation] Athermal Wavelength Filters toward Photonic Integrated Circuits (2011)
  • Author(s): Y.Atsumi
  • Organizer: The 1st International Symposium on Photonics and Electronics Convergence, ISPEC2011
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-11-14
• [Presentation] Design of Multi-functional GaInAsP/Si Hybrid Semiconductor Optical Amplifier (2011)
  • Author(s): K.Fukuda
  • Organizer: The 1st International Symposium on Photonics and Electronics Convergence, ISPEC2011
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-11-14
• [Presentation] Low-loss Amorphous Silicon Wire Waveguides Multilayer Stacked on SOI (2011)
  • Author(s): J.H.Kang
  • Organizer: The 1st International Symposium on Photonics and Electronics Convergence, ISPEC2011
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-11-14
• [Presentation] Low-Loss GaInAsP Photonic Wire Waveguide for Optical Interconnection (2011)
  • Author(s): J.Lee
  • Organizer: The 1st International Symposium on Photonics and Electronics Convergence, ISPEC2011
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-11-14
• [Presentation] GHz Response of Polycrystalline Silicon Photodiode Fabricated by Standard CMOS Process (2011)
  • Author(s): T.Maruyama
  • Organizer: The 1st International Symposium on Photonics and Electronics Convergence (ISPEC 2011)
  • Place of Presentation: Tokyo
  • Year and Date: 2011-11-14
• [Presentation] 共鳴トンネルダイオードによる室温テラヘルツ光源 (2011)
  • Author(s): 浅田雅洋
  • Organizer: 学術振興会第182委員会第11回研究会
  • Place of Presentation: 浜松
  • Year and Date: 2011-10-24
• [Presentation] Non-unity Permeability in InP-based Mach-Zehnder Interferometer with Metamaterial (2011)
  • Author(s): T.Amemiya
  • Organizer: 2011 IEEE Photonics Conference (IPC-2011)
  • Place of Presentation: Arlington, USA
  • Year and Date: 2011-10-13
• [Presentation] Carrier Concentration Dependent Resonance Frequency Shift in Metamaterial Loaded Semiconductor (2011)
  • Author(s): S.Myoga
  • Organizer: 2011 IEEE Photonics Conference (IPC-2011)
  • Place of Presentation: Arlington, USA
  • Year and Date: 2011-10-13
• [Presentation] Lateral Current Injection Laser with Uniformly Distributed Quantum-Well Structure (2011)
  • Author(s): T.Shindo
  • Organizer: 2011 IEEE Photonics Conference (IPC-2011)
  • Place of Presentation: Arlington, USA
  • Year and Date: 2011-10-13
• [Presentation] Membrane InP-based Lasers and Related Devices for On-chip Interconnects (2011)
  • Author(s): N.Nishiyama
  • Organizer: 2011 IEEE Photonics Conference (IPC-2011)
  • Place of Presentation: Arlington, USA
  • Year and Date: 2011-10-13
• [Presentation] Intensity Modulation of Sub-Terahertz Oscillating Resonant Tunneling Diode by Irradiation of 1.55-μm Laser (2011)
  • Author(s): S.Kaburaki
  • Organizer: IEEE Photonics Conference (IPC 11)
  • Place of Presentation: Arlington/VA, USA
  • Year and Date: 2011-10-13
• [Presentation] Room-Temperature Lasing Operation of a 1.3-μm npn-AlGaInAs/InP Transistor Laser (2011)
  • Author(s): T.Sato
  • Organizer: 2011 IEEE Photonics Conference (IPC-2011)
  • Place of Presentation: Arlington, USA
  • Year and Date: 2011-10-12
• [Presentation] Direct Modulation of THz-Oscillating Resonant Tunneling Diodes (2011)
  • Author(s): K.Ishigaki
  • Organizer: Infrared and Millimeter Waves & Terahertz Electronics (IRMMW-THz 2011)
  • Place of Presentation: Huston, USA
  • Year and Date: 2011-10-05
• [Presentation] Dependence of Output Power on Slot Antenna Width in Terahertz Oscillatin Resonant Tunneling Diodes (2011)
  • Author(s): H.Shibayama
  • Organizer: Infrared and Millimeter Waves & Terahertz Electronics (IRMMW-THz 2011)
  • Place of Presentation: Huston, USA
  • Year and Date: 2011-10-05
• [Presentation] High-currento-density InP ultrafine devices for high-speed operation (2011)
  • Author(s): Y.Miyamoto
  • Organizer: Infrared and Millimeter Waves & Terahertz Electronics (IRMMW-THz 2011)
  • Place of Presentation: Huston, USA
  • Year and Date: 2011-10-04
• [Presentation] GaAsSb/InGaAs Vertical Tunnel FET with a 25 nm-wide Channel Mesa Structure (2011)
  • Author(s): M.Fujimatsu
  • Organizer: 2011 Int.Conf.Solid State Devices and Materials (SSDM 2011)
  • Place of Presentation: Aichi, Japan
  • Year and Date: 2011-09-29
• [Presentation] Active Layer Thickness Dependence of the Bandwidth of Amorphous Silicon Photoconductors (2011)
  • Author(s): T.Maruyama
  • Organizer: 2011 International Conference on Solid State Devices and Materials (SSDM 2011)
  • Place of Presentation: Nagoya
  • Year and Date: 2011-09-29
• [Presentation] Wide-Gap Athermal Si-Slot Mach-Zhender Interferometer Embedded with Benzocyclobutene (2011)
  • Author(s): Y.Atsumi
  • Organizer: The 8th Int.Conf, on Group IV Photonics
  • Place of Presentation: London, UK
  • Year and Date: 2011-09-16
• [Presentation] メタマテリアルを有するInP系マッハツェンダー導波路における透磁率変化の推定 (2011)
  • Author(s): 雨宮智宏
  • Organizer: 電子情報通信学会2011年ソサイエティ大会
  • Place of Presentation: 札幌
  • Year and Date: 2011-09-15
• [Presentation] オンチップ光通信に向けたInP/Si貼り付け技術とその光デバイス特性 (2011)
  • Author(s): 雨宮智宏
  • Organizer: 電子情報通信学会2011年ソサイエティ大会
  • Place of Presentation: 札幌
  • Year and Date: 2011-09-15
• [Presentation] BCB埋め込み温度無依存SiスロットMZI型波長フィルタ信号伝送特性の温度依存性 (2011)
  • Author(s): 小田学
  • Organizer: 電子情報通信学会2011年ソサイエティ大会
  • Place of Presentation: 札幌
  • Year and Date: 2011-09-15
• [Presentation] オンチップ光配線に向けた光導波路作製 (2011)
  • Author(s): 姜〓〓
  • Organizer: 電子情報通信学会2011年ソサイエティ大会
  • Place of Presentation: 札幌
  • Year and Date: 2011-09-15
• [Presentation] 金属側壁層を有するプラズモニックDFBレーザの理論解析 (2011)
  • Author(s): 雨宮智宏
  • Organizer: 電子情報通信学会2011年ソサイエティ大会
  • Place of Presentation: 札幌
  • Year and Date: 2011-09-14
• [Presentation] 電子ランチャを持つInGaAs MOSFETにおけるヘテロ障壁高さ依存性 (2011)
  • Author(s): 池田俊介
  • Organizer: 電子情報通信学会2011年ソサイエティ大会
  • Place of Presentation: 札幌
  • Year and Date: 2011-09-13
• [Presentation] ソース裏面電極によるInP/InGaAsコンポジットチャネルMOSFETのアクセス抵抗低減 (2011)
  • Author(s): 加藤淳
  • Organizer: 電子情報通信学会2011年ソサイエティ大会
  • Place of Presentation: 札幌
  • Year and Date: 2011-09-13
• [Presentation] GaAsSb/InGaAsヘテロ接合を用いた縦型トンネルFETの作製・評価 (2011)
  • Author(s): 藤松基彦
  • Organizer: 電子情報通信学会2011年ソサイエティ大会
  • Place of Presentation: 札幌
  • Year and Date: 2011-09-13
• [Presentation] Nd錯体を添加したポリスチレン光導波路の発光特性 (2011)
  • Author(s): 寺澤佳大
  • Organizer: 電気関係学会北陸支部連合大会
  • Place of Presentation: 福井
  • Year and Date: 2011-09-11
• [Presentation] 感光性エポキシ樹脂を用いた光導波路の作製 (2011)
  • Author(s): 河原健志
  • Organizer: 電気関係学会北陸支部連合大会
  • Place of Presentation: 福井
  • Year and Date: 2011-09-11
• [Presentation] Nd添加PMMA光導波路の発光特性 (2011)
  • Author(s): 藤井洋輔
  • Organizer: 電気関係学会北陸支部連合大会
  • Place of Presentation: 福井
  • Year and Date: 2011-09-11
• [Presentation] InP系化合物半導体を用いたMOSFETの技術動向 (2011)
  • Author(s): 宮本恭幸
  • Organizer: 電気学会電子・情報・システム部門大会
  • Place of Presentation: 富山
  • Year and Date: 2011-09-09
• [Presentation] 幅広ギャップ構造を有する温度無依存BCB埋め込みSiスロット型リング共振器 (2011)
  • Author(s): 渥美裕樹
  • Organizer: 第72回秋季応用物理学会学術講演会
  • Place of Presentation: 山形
  • Year and Date: 2011-09-02
• [Presentation] 再成長ソース/ドレインを用いたIII-V族MOSFETの高電流動作 (2011)
  • Author(s): 金澤徹
  • Organizer: 第72回秋季応用物理学会学術講演会
  • Place of Presentation: 山形
  • Year and Date: 2011-09-02
• [Presentation] ICP-RIEを用いたAlGaInAs/InP埋め込みヘテロ構造レーザ (2011)
  • Author(s): 佐藤憲明
  • Organizer: 第72回秋季応用物理学会学術講演会
  • Place of Presentation: 山形
  • Year and Date: 2011-09-01
• [Presentation] 1.3-μm帯npn-AlGaInAs/InPトランジスタレーザの室温パルス動作 (2011)
  • Author(s): 佐藤孝司
  • Organizer: 第72回秋季応用物理学会学術講演会
  • Place of Presentation: 山形
  • Year and Date: 2011-09-01
• [Presentation] AlInAs酸化狭窄層を有するGaInAsP/InP-Siハイブリッドレーザの構造設計 (2011)
  • Author(s): 長部亮
  • Organizer: 第72回秋季応用物理学会学術講演会
  • Place of Presentation: 山形
  • Year and Date: 2011-09-01
• [Presentation] 横方向電流注入型レーザにおける内部量子効率の量子井戸構造依存性 (2011)
  • Author(s): 二見充輝
  • Organizer: 第72回秋季応用物理学会学術講演会
  • Place of Presentation: 山形
  • Year and Date: 2011-09-01
• [Presentation] 表面回折格子を有する横方向電流注入型メンブレンDFBレーザ (2011)
  • Author(s): 進藤隆彦
  • Organizer: 第72回秋季応用物理学会学術講演会
  • Place of Presentation: 山形
  • Year and Date: 2011-09-01
• [Presentation] Si基板上PZT膜の強誘電特性におけるITOバッファ層依存性 (2011)
  • Author(s): 江渕真伍
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形
  • Year and Date: 2011-09-01
• [Presentation] 多結晶シリコン光導電素子の活性層の薄膜化による周波数応答の向上 (2011)
  • Author(s): 乙坂英志
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形
  • Year and Date: 2011-09-01
• [Presentation] Numerical Analysis of Optical Gain of a 3-terminal HBT-SOA (2011)
  • Author(s): M.Shirao
  • Organizer: IQEC/CLEO Pacific Rim 2011
  • Place of Presentation: Sydney, Australia
  • Year and Date: 2011-08-31
• [Presentation] 半導体装荷型メタマテリアルにおけるキャリア濃度に依存した共振周波数変化 (2011)
  • Author(s): 明賀聖慈
  • Organizer: 第72回秋季応用物理学会学術講演会
  • Place of Presentation: 山形
  • Year and Date: 2011-08-31
• [Presentation] BCB貼付を用いたSi基板上低損失GaInAsP細線導波路の実現 (2011)
  • Author(s): 李智恩
  • Organizer: 第72回秋季応用物理学会学術講演会
  • Place of Presentation: 山形
  • Year and Date: 2011-08-31
• [Presentation] Si導波路幅の制御によるGaInAsP/SiハイブリッドSOA多機能集積のための設計 (2011)
  • Author(s): 福田渓太
  • Organizer: 第72回秋季応用物理学会学術講演会
  • Place of Presentation: 山形
  • Year and Date: 2011-08-31
• [Presentation] 共鳴トンネルダイオードテラヘルツ発振器における発振出力のアンテナ幅依存性 (2011)
  • Author(s): 柴山裕孝
  • Organizer: 第72回秋季応用物理学会学術講演会
  • Place of Presentation: 山形
  • Year and Date: 2011-08-31
• [Presentation] 共鳴トンネルダイオード発振素子の直接出力変調と変調周波数上限の外部回路依存性 (2011)
  • Author(s): 石垣要
  • Organizer: 第72回秋季応用物理学会学術講演会
  • Place of Presentation: 山形
  • Year and Date: 2011-08-31
• [Presentation] 1.55μmレーザ光照射による共鳴トンネルダイオードサブテラヘルツ発振器の出力強度変調 (2011)
  • Author(s): 鏑木新治
  • Organizer: 第72回秋季応用物理学会学術講演会
  • Place of Presentation: 山形
  • Year and Date: 2011-08-31
• [Presentation] Terahertz Oscillation of InGaAs/AlAs Resonant Tunneling Diodes at Room Temperature (2011)
  • Author(s): S.Suzuki
  • Organizer: Topical Workshop on Heterostructure Materials (TWHM)
  • Place of Presentation: Gifu, Japan
  • Year and Date: 2011-08-30
• [Presentation] Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process (2011)
  • Author(s): Y.Yamaguchi
  • Organizer: 9th Topical Workshop on Heterostructure Materials (TWHM 2011)
  • Place of Presentation: Gifu, Japan
  • Year and Date: 2011-08-29
• [Presentation] Semiconductor DFB Laser with Plasmonic Metal Layers for Subwavelength Confinement of Light (2011)
  • Author(s): T.Amemiya
  • Organizer: IQEC/CLEO Pacific Rim 2011
  • Place of Presentation: Sydney, Australia
  • Year and Date: 2011-08-28
• [Presentation] Terahertz Oscillation of Resonant Tunneling Diodes at Room Temperature (2011)
  • Author(s): M.Asada
  • Organizer: Opto-electronics and Nanostructures (EDISON 17)
  • Place of Presentation: Santa Barbara, USA
  • Year and Date: 2011-08-11
• [Presentation] Stripe Width Dependence of Internal Quantum Efficiency and Carrier Injection Delay in Lateral Current Injection GaInAsP/InP Lasers (2011)
  • Author(s): M.Futami
  • Organizer: The 16th Opto-Electronics and Communication Conference (OECC2011)
  • Place of Presentation: Kaohsiung, Taiwan
  • Year and Date: 2011-07-07
• [Presentation] Lasing Operation of Lateral-Cvrrent-Injection Membrane DFB Laser with Surface Grating (2011)
  • Author(s): T.Shindo
  • Organizer: The 16th Opto-Electronics and Communication Conference (OECC2011)
  • Place of Presentation: Kaohsiung, Taiwan
  • Year and Date: 2011-07-06
• [Presentation] Low loss amorphous polyethylene terephthalate (PET) optical waveguides (2011)
  • Author(s): K.Iiyama
  • Organizer: 16th Opto-Electronics and Communications Conference (OECC 2011)
  • Place of Presentation: Kaohsiung, Taiwan
  • Year and Date: 2011-07-06
• [Presentation] Frequency Response of Amorphous Silicon Photoconductor (2011)
  • Author(s): H.Otosaka
  • Organizer: 16th Opto-Electronics and Communications Conference (OECC 2011)
  • Place of Presentation: Kaohsiung, Taiwan
  • Year and Date: 2011-07-06
• [Presentation] Wide Bandwidth (>25Gbit/s)Modulation of Low Power Consumption Distributed Reflector Lasers with Wire-like Active Region (2011)
  • Author(s): N.Nishiyama
  • Organizer: Technical Report of IEICE
  • Place of Presentation: Tokyo
  • Year and Date: 2011-06-30
• [Presentation] Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO_2 Wires (2011)
  • Author(s): N.Takebe
  • Organizer: 2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2011)
  • Place of Presentation: Daejeon, Korea
  • Year and Date: 2011-06-29
• [Presentation] Reduction of Access Resistance of InP InGaAs Composite-Channel MOSFET with A Back Source Electrode (2011)
  • Author(s): A.Kato
  • Organizer: 2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2011)
  • Place of Presentation: Daejeon, Korea
  • Year and Date: 2011-06-29
• [Presentation] Room-Temperature THz Oscillation of Resonant Tunneling Diodes (2011)
  • Author(s): M.Asada
  • Organizer: Microwave/Terahertz Science and Applications (MTSA 2011)
  • Place of Presentation: Nanjing, China
  • Year and Date: 2011-06-21
• [Presentation] MOVPE-regrown source/drain regions for III-V MOSFETs with high drain current of 1.27 A/mm (2011)
  • Author(s): T.Kanazawa
  • Organizer: The 23rd Int.Conf.Indium Phosphide & Related Materials (IPRM 2011)
  • Place of Presentation: Berlin, Germany
  • Year and Date: 2011-05-25
• [Presentation] Low-power Consumption and High-eye-margin 10 Gbit/s Operation of Distributed Reflector Laser with Wirelike Active Regions (2011)
  • Author(s): D.Takahashi
  • Organizer: The 23rd Int.Conf.Indium Phosphide and Related Materials (IPRM-2011)
  • Place of Presentation: Berlin, Germany
  • Year and Date: 2011-05-24
• [Presentation] Lasing Operation of Long-Wavelength Transistor Laser Using AlGaInAs/InP Ouantum Well Active Region (2011)
  • Author(s): M.Shirao
  • Organizer: The 23rd Int.Conf.Indium Phosphide and Related Materials (IPRM-2011)
  • Place of Presentation: Berlin, Germany
  • Year and Date: 2011-05-24
• [Presentation] Uniform BCB Bonding Process Toward Low Propagation Loss (2011)
  • Author(s): Y.Maeda
  • Organizer: The 23rd Int.Conf.on Indium Phosphide and Related Materials (IPRM-2011)
  • Place of Presentation: Berlin, Germany
  • Year and Date: 2011-05-24
• [Presentation] Lateral Current Injection Distributed Feedback Laser with Wirelike Active Regions (2011)
  • Author(s): T.Shindo
  • Organizer: The 23rd Int.Conf.on Indium Phosphide and Related Materials (IPRM-2011)
  • Place of Presentation: Berlin, Germany
  • Year and Date: 2011-05-24
• [Presentation] High Output Power (～400μW) Oscillators at Around 550 GHz Using Large Area RTD and Optimized Antenna Structure (2011)
  • Author(s): M.Shiraishi
  • Organizer: Indium Phosphide & Related Materials (IPRM 2011)
  • Place of Presentation: Berlin, Germany
  • Year and Date: 2011-05-24
• [Presentation] Fundamental Oscillation up to 1.08 THz in Resonant Tunneling Diodes with High Indium Composition Transit Layers (2011)
  • Author(s): A.Teranishi
  • Organizer: Indium Phosphide & Related Materials (IPRM 2011)
  • Place of Presentation: Berlin, Germany
  • Year and Date: 2011-05-24
• [Presentation] Reduction of source parasitic capacitance in vertical InGaAs MIS-FET (2011)
  • Author(s): Y.Matsumoto
  • Organizer: The 23rd Int.Conf.Indium Phosphide & Related Materials (IPRM 2011)
  • Place of Presentation: Berlin, Germany
  • Year and Date: 2011-05-24
• [Presentation] Effect of Thermal Cleaning on Regrowth Interface Quality of AlGaInAs/InP Buried Heterostructure Lasers (2011)
  • Author(s): N.Sato
  • Organizer: The 38th Int.Symposium on Compound Semiconductors (ISCS2011)
  • Place of Presentation: Berlin, Germany
  • Year and Date: 2011-05-23
• [Presentation] 多結晶シリコン光導電素子の周波数応答 (2011)
  • Author(s): 乙坂英志
  • Organizer: 電子情報通信学会レーザ・量子エレクトロニクス研究会
  • Place of Presentation: 金沢
  • Year and Date: 2011-05-20
• [Presentation] 非晶質PETを用いた低損失有機光導波路 (2011)
  • Author(s): 飯山宏一
  • Organizer: 電子情報通信学会レーザ・量子エレクトロニクス研究会
  • Place of Presentation: 金沢
  • Year and Date: 2011-05-20
• [Presentation] 3端子を有するヘテロ接合バイポーラトランジスタ型SOAの数値解析 (2011)
  • Author(s): 白尾瑞基
  • Organizer: The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Atsugi, Japan
  • Year and Date: 2011-03-27
• [Presentation] III-V化合物半導体のキャリアを用いたメタマテリアルの共振周波数変化 (2011)
  • Author(s): 明賀聖慈
  • Organizer: The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Atsugi, Japan
  • Year and Date: 2011-03-27
• [Presentation] 高インジウム組成電子走行層を有する共鳴トンネルダイオードによる1.08THzへの基本波発振周波数向上 (2011)
  • Author(s): 寺西豊志
  • Organizer: The 58th Spring Meeting, 2011 ; The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Atsugi, Japan
  • Year and Date: 2011-03-27
• [Presentation] 大面積RTDとアンテナ構造最適化による550GHz帯高出力(～400μW)発振 (2011)
  • Author(s): 白石誠人
  • Organizer: The 58th Spring Meeting, 2016 ; The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Atsugi, Japan
  • Year and Date: 2011-03-27
• [Presentation] MIMキャパシタンス減少による共鳴トンネルダイオード発振素子の変調周波数向上 (2011)
  • Author(s): 石垣要
  • Organizer: The 58th Spring Meeting, 2011 ; The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Atsugi, Japan
  • Year and Date: 2011-03-27
• [Presentation] ボウタイアンテナ集積型Ni-InP SBDのカットオフ周波数の向上 (2011)
  • Author(s): 丸山薫
  • Organizer: The 58th Spring Meeting, 2011 ; The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Atsugi, Japan
  • Year and Date: 2011-03-27
• [Presentation] GaN HEMTにおけるゲートリークの解析 (2011)
  • Author(s): 大石敏之
  • Organizer: The 58th Spring Meeting, 2011 ; The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Atsugi, Japan
  • Year and Date: 2011-03-27
• [Presentation] アモルファスシリコンを熱処理した多結晶シリコン膜による光導電素子 (2011)
  • Author(s): 乙坂英志
  • Organizer: 第58回 応用物理学関係連合講演会
  • Place of Presentation: Atsugi, Japan
  • Year and Date: 2011-03-27
• [Presentation] 細線状活性層を有するGaInAsP/InP横方向電流注入型DFBレーザ (2011)
  • Author(s): 二見充輝
  • Organizer: The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Atsugi, Japan
  • Year and Date: 2011-03-26
• [Presentation] 横方向電流注入型レーザにおける発振特性のストライプ幅依存性 (2011)
  • Author(s): 進藤隆彦
  • Organizer: The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Atsugi, Japan
  • Year and Date: 2011-03-26
• [Presentation] 1.3-μm帯pnp-AlGaInAs/InPレーザトランジスタの室温連続動作 (2011)
  • Author(s): 佐藤孝司
  • Organizer: The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Atsugi, Japan
  • Year and Date: 2011-03-26
• [Presentation] AlGaInAs/InP埋め込みヘテロ構造レーザにおけるサーマルクリーニング中雰囲気の再成長界面品質に対する影響 (2011)
  • Author(s): 佐藤憲明
  • Organizer: The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Atsugi, Japan
  • Year and Date: 2011-03-26
• [Presentation] 金属側壁層を有するプラズモニックDFBレーザの理論解析 (2011)
  • Author(s): 雨宮智宏
  • Organizer: The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Atsugi, Japan
  • Year and Date: 2011-03-26
• [Presentation] GaAsSb/InGaAsヘテロ接合を用いた縦型トンネルFETに関する研究 (2011)
  • Author(s): 藤松基彦
  • Organizer: The 58th Spring Meeting, 2011 ; The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Atsugi, Japan
  • Year and Date: 2011-03-26
• [Presentation] 基板転写プロセスを用いたSi基板上InP/InGaAs SHBTの作製 (2011)
  • Author(s): 山口裕太郎
  • Organizer: The 58th Spring Meeting, 2012 ; The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Atsugi, Japan
  • Year and Date: 2011-03-26
• [Presentation] テラヘルツデバイスの新展開:イントロダクトリー (2011)
  • Author(s): 浅田雅洋
  • Organizer: The 58th Spring Meeting, 2013 ; The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Atsugi, Japan
  • Year and Date: 2011-03-26
• [Presentation] 共鳴トンネルダイオード室温THz発振器 (2011)
  • Author(s): 鈴木左文
  • Organizer: The 58th Spring Meeting, 2014 ; The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Atsugi, Japan
  • Year and Date: 2011-03-26
• [Presentation] InP/InGaAs DHBTにおけるSiO_2細線埋め込みによるベースコレクタ間容量の削減 (2011)
  • Author(s): 武部直明
  • Organizer: The 58th Spring Meeting, 2011 ; The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Atsugi, Japan
  • Year and Date: 2011-03-26
• [Presentation] 幅広ギャップ構造を有するBCB埋め込み温度無依存SiスロットMZI (2011)
  • Author(s): 渥美裕樹
  • Organizer: The 58th Spring Meeting, The Japan Society Applied Physics and Related Societies
  • Place of Presentation: Atsugi, Japan
  • Year and Date: 2011-03-24
• [Presentation] 多層化されたアモルファスシリコン細線導波路の低損失伝搬特性 (2011)
  • Author(s): 姜〓〓
  • Organizer: The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Atsugi, Japan
  • Year and Date: 2011-03-24
• [Presentation] 細線状活性層を有する分布反射型レーザの変調帯域拡大と10Gbit/s低消費電力動作 (2011)
  • Author(s): 高橋大佑
  • Organizer: The 2011 IEICE General conf.
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-03-16
• [Presentation] 多層光回路構造実現のための異種基板積層技術とデバイス特性 (2011)
  • Author(s): 西山伸彦
  • Organizer: The 2011 IEICE General conf.
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-03-14
• [Presentation] Meta-photonic device～possibility of permeability control in semiconductor-based photonic device combined with metamaterial～ (2011)
  • Author(s): T.Amemiya
  • Organizer: Technical Report of IEICE
  • Place of Presentation: Kagoshima, Japan
  • Year and Date: 2011-02-28
• [Presentation] Lateral Current Injection GaInAsP/InP Llaser for Membrane Based Photonic Circuits (2011)
  • Author(s): S.Arai
  • Organizer: SPIE Photonics West Conference 2011
  • Place of Presentation: San Francisco, California, USA
  • Year and Date: 2011-01-24
• [Presentation] III-V quantum well channel MOSFET with back electrode (2011)
  • Author(s): T.Kanazawa
  • Organizer: IEICE Technical Report of meeting on Electron Devices
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-01-14
• [Presentation] Si・SOI基板上レーザ素子の現状 (2011)
  • Author(s): 西山伸彦
  • Organizer: レーザー学会学術講演会第31回年次大会
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2011-01-10
• [Presentation] Lateral Current Injection GaInAsP/InP Laser for Membrane Based Photonic Circuits (2011)
  • Author(s): S. Arai, N. Nishiyama, and T. Okumura
  • Organizer: SPIE Photonics West Conference 2011, San Francisco, CA, USA
• [Presentation] Lateral Current Injection 1550 nm Wavelength DFB Laser with a-Si Surface Grating (2010)
  • Author(s): T.Shindo
  • Organizer: Technical Report of IEICE
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-12-17
• [Presentation] Si Slot Type Athermal Wavelength Filter Embedded with Benzocyclobutene (2010)
  • Author(s): Y.Atsumi
  • Organizer: Technical Report of IEICE
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-12-17
• [Presentation] The characteristics of GaInAsP wired waveguide on Si substrate with BCB bonding (2010)
  • Author(s): Y.Maeda
  • Organizer: Technical Report of IEICE
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-12-17
• [Presentation] アモルファスシリコン光導電素子の周波数応答 (2010)
  • Author(s): 乙坂英志
  • Organizer: 電子情報通信学会 光エレクトロニクス研究会
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-12-17
• [Presentation] Terahertz Oscillating Resonant Tunneling Diode at Room Temperature (2010)
  • Author(s): S.Suzuki
  • Organizer: Technical Report, Electron Device Meeting, IEICE of Japan
  • Place of Presentation: Sendai, Japan
  • Year and Date: 2010-12-16
• [Presentation] Transit Time Reduction with Graded Emitter in Resonant Tunneling Diode Terahertz Oscillators (2010)
  • Author(s): A.Teranishi
  • Organizer: Technical Report, Electron Device Meeting, IEICE of Japan
  • Place of Presentation: Sendai, Japan
  • Year and Date: 2010-12-16
• [Presentation] Membrane DFB lasers on SOI (2010)
  • Author(s): S.Arai
  • Organizer: Asia Communications and Photonics Conf.and Exhibition 2010 (ACP2010)
  • Place of Presentation: Shanghai, China
  • Year and Date: 2010-12-09
• [Presentation] アモルファスPETを用いた有機光導波路の開発 (2010)
  • Author(s): 石田光正
  • Organizer: 平成22年度応用物理学会北陸・信越支部学術講演会
  • Place of Presentation: Kanazawa, Japan
  • Year and Date: 2010-11-20
• [Presentation] Lateral Current Injection Type GaInAsP/InP DFB Laser with a-Si Surface Grating (2010)
  • Author(s): T.Shindo
  • Organizer: The 23rd Annual Meeting of the IEEE Photonics Society(PHO 2010)
  • Place of Presentation: Denver, CO, USA
  • Year and Date: 2010-11-11
• [Presentation] Metamaterial-based Control of Permeability in GaInAsP/InP Multimode-Interferometers (2010)
  • Author(s): T.Amemiya
  • Organizer: The 23rd Annual Meeting of the IEEE Photonics Society (PHO 2010)
  • Place of Presentation: Denver, CO, USA
  • Year and Date: 2010-11-10
• [Presentation] Low-Loss Si-Slot Waveguides and Ring Resonator Embedded with Benzocyclobutene (2010)
  • Author(s): Y.Atsumi
  • Organizer: The 23rd Annual Meeting of the IEEE Photonics Society (PHO 2010)
  • Place of Presentation: Denver, CO, USA
  • Year and Date: 2010-11-09
• [Presentation] THz Oscillators Using Resonant Tunneling Diodes Int.Conf.Semiconductor Integrated Circuits and Technology (2010)
  • Author(s): M.Asada
  • Organizer: 10th IEEE Int.Conf.on Solid-State and Integrated Circuit Technology (ICSICT-2010)
  • Place of Presentation: Shanghai, China
  • Year and Date: 2010-11-02
• [Presentation] Submicron-channel InGaAs MISFET with epitaxially grown source (2010)
  • Author(s): Y.Miyamoto
  • Organizer: 10th IEEE Int.Conf.Solid-State and Integrated Circuit Technology (ICSICT-2010)
  • Place of Presentation: Shanghai, China
  • Year and Date: 2010-11-02
• [Presentation] 1.04 THz Fundamental Oscillation of Resonant Tunneling Diode at Room Temperature (2010)
  • Author(s): S.Suzuki
  • Organizer: European Optical Society (EOS) Annual Meeting, Terahertz Science and Technology
  • Place of Presentation: Paris, France
  • Year and Date: 2010-10-26
• [Presentation] Terahertz Oscillating Resonant Tunneling Diode at Room Temperature (2010)
  • Author(s): S.Suzuki
  • Organizer: JSPS, No.130 Committee Meeting
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-10-22
• [Presentation] First Lasing Operation of Injection Type Membrane GaInAsP DFB Laser With Lateral Current Injection BH Structure (2010)
  • Author(s): T.Okumura
  • Organizer: The 22nd IEEE Int.Semiconductor Laser Conf.(ISLC 2010)
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2010-09-29
• [Presentation] Membrane Lasers on Si-Low Power Consumption Lasers for Monolithic Integration (2010)
  • Author(s): S.Arai
  • Organizer: Workshop on Semiconductor Lasers, at The 22nd IEEE Int.Semiconductor Laser Conf.(ISLC 2010)
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2010-09-26
• [Presentation] Membrane-Type Photonic Devices for Optical Circuits on SOI (2010)
  • Author(s): S.Arai
  • Organizer: 2010 Int.Conf.on Solid State Devices and Materials (SSDM 2010)
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-09-24
• [Presentation] Loss Measurement of Multiple Layer a-Si Waveguides toward 3D Si-Optical Circuits (2010)
  • Author(s): J.Kang
  • Organizer: 2010 Int.Conf.on Solid State Devices and Materials (SSDM 2010)
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-09-24
• [Presentation] Terahertz Oscillating InGaAs/AlAs Resonant Tunneling Diodes (2010)
  • Author(s): S.Suzuki
  • Organizer: 2010 Int.Conf.Solid State Devices and Materials (SSDM 2010)
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-09-23
• [Presentation] InP/InGaAs MOSFET with back-electrode structure bonded on Si substrate using a BCB adhesive Layer (2010)
  • Author(s): T.Kanazawa
  • Organizer: 2010 International Conference on Solid State Devices and Materials (SSDM 2010)
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-09-22
• [Presentation] 1.04 THz Fundamental Oscillation of Resonant Tunneling Diode at Room Temperature (2010)
  • Author(s): S.Suzuki
  • Organizer: 2nd Japanese-Russian Young Scientists Conference on Nanomaterials and Nnanotechnology
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-09-21
• [Presentation] 共鳴トンネルダイオードによる1.04THz基本波発振 (2010)
  • Author(s): 鈴木左文
  • Organizer: The 71th Autumn Meeting, 2010 ; The Japan Society of Applied Physics
  • Place of Presentation: Nagasaki, Japan
  • Year and Date: 2010-09-17
• [Presentation] 入力信号と局部発振にRTDを用いたInP-SBDのサブTHzヘテロダイン検出 (2010)
  • Author(s): 辛島宏一
  • Organizer: The 71th Autumn Meeting, 2010 ; The Japan Society of Applied Physics
  • Place of Presentation: Nagasaki, Japan
  • Year and Date: 2010-09-17
• [Presentation] アモルファスシリコンMSM型光導電素子の周波数特性 (2010)
  • Author(s): 乙坂英志
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: Nagasaki, Japan
  • Year and Date: 2010-09-17
• [Presentation] a-Si表面回折格子を用いた横方向電流注入型DFBレーザ (2010)
  • Author(s): 進藤隆彦
  • Organizer: The 71st Autumn Meeting, The Japan Society of Applied Physics
  • Place of Presentation: Nagasaki, Japan
  • Year and Date: 2010-09-16
• [Presentation] 半導体薄膜DFBレーザの電流注入動作 (2010)
  • Author(s): 小口貴之
  • Organizer: The 71st Autumn Meeting, The Japan Society of Applied Physics
  • Place of Presentation: Nagasaki, Japan
  • Year and Date: 2010-09-16
• [Presentation] SOI基板上集積二重導波路構造レーザの理論検討 (2010)
  • Author(s): 伊藤瞳
  • Organizer: The 71st Autumn Meeting, 2010, The Japan Society of Applied Physics
  • Place of Presentation: Nagasaki, Japan
  • Year and Date: 2010-09-16
• [Presentation] 活性層分離型分布反射型レーザの変調特性の構造依存性 (2010)
  • Author(s): 高橋大佑
  • Organizer: The 71st Autumn Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Nagasaki, Japan
  • Year and Date: 2010-09-16
• [Presentation] GaInAsP/InP細線状活性層を有するDBRの透過反射スペクトル特性 (2010)
  • Author(s): 信野圭祐
  • Organizer: The 71st Autumn Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Nagasaki, Japan
  • Year and Date: 2010-09-16
• [Presentation] VCSELを用いた高分解能FMCWセンシングシステム (2010)
  • Author(s): 松井慎一郎
  • Organizer: 2010年電子情報通信学会ソサイエティ大会
  • Place of Presentation: Osaka, Japan
  • Year and Date: 2010-09-15
• [Presentation] III-V族半導体薄膜光集積回路実現に向けた薄膜品質の改善 (2010)
  • Author(s): 前田泰奈
  • Organizer: The 71st Autumn Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Nagasaki, Japan
  • Year and Date: 2010-09-14
• [Presentation] 表面活性化接合法によるSOI導波路上GaInAsP薄膜構造の形成 (2010)
  • Author(s): 長部亮
  • Organizer: The 71st Autumn Meeting, The Japan Society of Applied Physics
  • Place of Presentation: Nagasaki, Japan
  • Year and Date: 2010-09-14
• [Presentation] BCB埋め込みスロットリング共振器の低損失化 (2010)
  • Author(s): 渥美裕樹
  • Organizer: The 71st Autumn Meeting, The Japan Society of Applied Physics
  • Place of Presentation: Nagasaki, Japan
  • Year and Date: 2010-09-14
• [Presentation] GaInAsP/InP MMIとメタマテリアル融合素子における透磁率変化の観測 (2010)
  • Author(s): 雨宮智宏
  • Organizer: The 71st Autumn Meeting, The Japan Society of Applied Physics
  • Place of Presentation: Nagasaki, Japan
  • Year and Date: 2010-09-14
• [Presentation] 共鳴トンネルダイオードによる室温テラヘルツ発振 (2010)
  • Author(s): 鈴木左文
  • Organizer: Nat.Conv.Rec., IEICE of Japan
  • Place of Presentation: Osaka, Japan
  • Year and Date: 2010-09-14
• [Presentation] 縦型InGaAsチャネルMISFETの高電流密度動作 (2010)
  • Author(s): 齋藤尚史
  • Organizer: The 71th Autumn Meeting, 2010 ; The Japan Society of Applied Physics
  • Place of Presentation: Nagasaki, Japan
  • Year and Date: 2010-09-14
• [Presentation] 縦型InGaAs-MISFETの高周波に向けた研究 (2010)
  • Author(s): 松本豊
  • Organizer: The 71th Autumn Meeting, 2010 ; The Japan Society of Applied Physics
  • Place of Presentation: Nagasaki, Japan
  • Year and Date: 2010-09-14
• [Presentation] Si基板上貼付された裏面電極付InP/InGaAs MOSFET (2010)
  • Author(s): 金澤徹
  • Organizer: The 71th Autumn Meeting, 2010 ; The Japan Society of Applied Physics
  • Place of Presentation: Nagasaki, Japan
  • Year and Date: 2010-09-14
• [Presentation] Al_2O_3ゲート絶縁膜および再成長ソースを有するサブミクロンInP/InGaAs n-MOSFET (2010)
  • Author(s): 寺尾良輔
  • Organizer: The 71th Autumn Meeting, 2010 ; The Japan Society of Applied Physics
  • Place of Presentation: Nagasaki, Japan
  • Year and Date: 2010-09-14
• [Presentation] Membrane DFB lasers on SOI (2010)
  • Author(s): S. Arai, N. Nishiyama, and T. Okumura
  • Organizer: Asia Communications and Photonics Conf. and Exhibition 2010(ACP2010), Shanghai, China, ThF1
  • Year and Date: 2010-09-12
• [Presentation] Heterodyne Detection of Output of Sub-THz RTD Oscillator Using InP-SBD Detector and RTD Local Oscillator (2010)
  • Author(s): K.Karashima
  • Organizer: Int.Conf.Infrared & Millimeter Waves and Terahertz Electronics (IRMMW-THz 2010)
  • Place of Presentation: Rome, Italy
  • Year and Date: 2010-09-09
• [Presentation] THz Oscillators Using Resonant Tunneling Diodes at Room Temperature (2010)
  • Author(s): M.Asada
  • Organizer: Int.Conf.Infrared & Millimeter Waves and Terahertz Electronics (IRMMW-THz 2010)
  • Place of Presentation: Rome, Italy
  • Year and Date: 2010-09-07
• [Presentation] Increase of Fundamental Oscillation Frequency in Resonant Tunneling Diode with Thin Barrier and Graded Emitter Structures (2010)
  • Author(s): S.Suzuki
  • Organizer: Int.Conf.Infrared & Millimeter Waves and Terahertz Electronics (IRMMW-THz 2010)
  • Place of Presentation: Rome, Italy
  • Year and Date: 2010-09-07
• [Presentation] Propagation Loss of Amorphous Silicon Optical Waveguides at the 0.8 μm-Wavelength Range (2010)
  • Author(s): T.Asukai
  • Organizer: 7^<th> International Conference on Group IV Photonics
  • Place of Presentation: Beijing, Chaina
  • Year and Date: 2010-09-02
• [Presentation] AlGaInAs/InP埋め込みヘテロ構造レーザにおけるサーマルクリーニング中雰囲気の再成長界面品質に対する影響 (2010)
  • Author(s): 瀧野祐太
  • Organizer: The 71st Autumn Meeting, The Japan Society of Applied Physics and Related Societies
  • Place of Presentation: Nagasaki, Japan
  • Year and Date: 2010-08-19
• [Presentation] Low power consumption semiconductor lasers for optical interconnections (2010)
  • Author(s): N.Nishiyama
  • Organizer: 15th OptoElectronics and Communications Conference, (OECC 2010)
  • Place of Presentation: Sapporo, Japan
  • Year and Date: 2010-07-08
• [Presentation] Current Status of III-V/Si Hybrid Optical Devices (2010)
  • Author(s): N.Nishiyama
  • Organizer: 15th OptoElectronics and Communications Conference, (OECC 2010)
  • Place of Presentation: Sapporo, Japan
  • Year and Date: 2010-07-05
• [Presentation] Fundamental oscillations at～900 GHz with low bias voltages in RTDs having spike-doped structures (2010)
  • Author(s): S.Suzuki
  • Organizer: 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-06-30
• [Presentation] Fabrication of InP/InGaAs DHBTs with buried SiO_2 wires (2010)
  • Author(s): N.Takebe
  • Organizer: 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-06-30
• [Presentation] InGaAs MISFET with epitaxially grown source (2010)
  • Author(s): Y.Miyamoto
  • Organizer: The 3rd Int.Symp.Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2010)
  • Place of Presentation: Toyama, Japan
  • Year and Date: 2010-06-23
• [Presentation] Stabilization on Fabrication of GaInAsP/InP Membrane Structure on SOI waveguide by Surface Activated Bonding (2010)
  • Author(s): R.Osabe
  • Organizer: The 37th International Symposium on Compound Semiconductors (ISCS 2010)
  • Place of Presentation: Takamatsu, Japan
  • Year and Date: 2010-06-04
• [Presentation] Direct Measurements of Characteristics of GaInAsP/InP Bragg Gratings with Periodically Etched Quantum Wells (2010)
  • Author(s): K.Shinno
  • Organizer: The 37th Int.Sym.on Compound Semiconductors (ISCS 2010)
  • Place of Presentation: Takamatsu, Japan
  • Year and Date: 2010-06-04
• [Presentation] Room-Temperature Oscillation of Resonant Tunneling Diodes in Terahertz Range (2010)
  • Author(s): M.Asada
  • Organizer: 37th Int.Symp.Compound Semicond.(ISCS 2010)
  • Place of Presentation: Takamatsu, Japan
  • Year and Date: 2010-06-04
• [Presentation] Lateral Junction Waveguide Type Photodiode for Membrane Photonic Circuits (2010)
  • Author(s): D.Kondo
  • Organizer: The 22nd Int.Conf.on Indium Phosphide and Related Materials (IPRM 2010)
  • Place of Presentation: Takamatsu, Japan
  • Year and Date: 2010-06-03
• [Presentation] Investigation of Bonding Strength and Photoluminescence Properties of InP/Si Surface Activated Bonding (2010)
  • Author(s): S.Kondo
  • Organizer: The 22nd Int.Conf.on Indium Phosphide and Related Materials (IPRM 2010)
  • Place of Presentation: Takamatsu, Japan
  • Year and Date: 2010-06-02
• [Presentation] Dynamic Characteristics of Lateral Current Injection Laser (2010)
  • Author(s): T.Okumura
  • Organizer: The 37th International Symposium on Compound Semiconductors (ISCS 2010)
  • Place of Presentation: Takamatsu, Japan
  • Year and Date: 2010-06-02
• [Presentation] Investigation of Regrowth Interface Quality of AlGaInAs/InP Buried Heterostructure Lasers (2010)
  • Author(s): Y.Takino
  • Organizer: The 22nd Int.Conf.on Indium Phosphide and Related Materials (IPRM 2010)
  • Place of Presentation: Takamatsu, Japan
  • Year and Date: 2010-06-02
• [Presentation] All-optical Switch Consisting of Multimode Interferometer Combined with Metamaterials : Device Design (2010)
  • Author(s): T.Amemiya
  • Organizer: The 22nd Int.Conf.on Indium Phosphide and Related Materials (IPRM 2010)
  • Place of Presentation: Takamatsu, Japan
  • Year and Date: 2010-06-02
• [Presentation] Selective Undercut Etching for Ultra Narrow Mesa Structure in Vertical InGaAs Channel MISFET (2010)
  • Author(s): H.Saito
  • Organizer: 22nd Int.Conf.Indium Phosphide and Related Materials (IPRM2010)
  • Place of Presentation: Takamatsu, Japan
  • Year and Date: 2010-06-02
• [Presentation] RTD Oscillators at 430-460 GHz with High Output Power(～200 μW) Using Integrated Offset Slot Antennas (2010)
  • Author(s): S.Suzuki
  • Organizer: 22nd Int.Cof.Indium Phosphide and Related Compounds (IPRM 2010)
  • Place of Presentation: Takamatsu, Japan
  • Year and Date: 2010-06-02
• [Presentation] Thin-Film GaInAsP/InP Lateral Current Injection Type Fabry-Perot Laser-Improved Quantum Efficiency Operation- (2010)
  • Author(s): H.Ito
  • Organizer: The 22nd Int.Conf.on Indium Phosphide and Related Materials (IPRM 2010)
  • Place of Presentation: Takamatsu, Japan
  • Year and Date: 2010-06-01
• [Presentation] Deviation from Proportional Relationship between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density (2010)
  • Author(s): M.Yamada
  • Organizer: 37th Int.Symp.Compound Semiconductor (ISCS 2010)
  • Place of Presentation: Takamatsu, Japan
  • Year and Date: 2010-06-01
• [Presentation] Submicron InP/InGaAs composite channel MOSFETs with selectively regrown n^+-source/drain buried in channel undercut (2010)
  • Author(s): T.Kanazawa
  • Organizer: 22nd Int.Conf.Indium Phosphide and Related Materials (IPRM2010)
  • Place of Presentation: Takamatsu, Japan
  • Year and Date: 2010-06-01
• [Presentation] MEMSを用いた方向性結合器型光スイッチング素子の有限要素法解析 (2010)
  • Author(s): 稲本慎
  • Organizer: 電子情報通信学会レーザ・量子エレクトロニクス研究会
  • Place of Presentation: Fukui, Japan
  • Year and Date: 2010-05-28
• [Presentation] Magnetic Interaction at Optical Frequencies in InP-based Waveguide Device Combined with Metamaterial (2010)
  • Author(s): T.Amemiya
  • Organizer: Conference on Lasers and Electro Optics/International Quantum Electronics Conference (CLE0/IQEC) 2010
  • Place of Presentation: San Jose, CA, USA
  • Year and Date: 2010-05-21
• [Presentation] Large Signal Analysis of AlGaInAs/InP Laser Transistor (2010)
  • Author(s): M.Shirao
  • Organizer: Conference on Lasers and Electro Optics/International Quantum Electronics Conference (CLEO/IQEC) 2010
  • Place of Presentation: San Jose, CA, USA
  • Year and Date: 2010-05-17
• [Presentation] Si/III-Vハイブリッド光デバイスと関連技術 (2010)
  • Author(s): N.Nishiyama
  • Organizer: 日本学術振興会半導体界面制御技術第154委員会研究会
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-05-13
• [Presentation] Room-Temperature Terahertz Oscillators Using Resonant Tunneling Diodes (2010)
  • Author(s): S.Suzuki
  • Organizer: JSPS, No.162 Committee Meeting
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-05-07
• [Presentation] Analysis of SOI-Based Optical Waveguide Switch with MEMS Evanescent Coupler (2010)
  • Author(s): M.Inamoto
  • Organizer: 7^<th> International Conference on Optics-photonics Design & Fabrication
  • Place of Presentation: Yokohama, Japan
  • Year and Date: 2010-04-20
• [Presentation] High-mobility MOSFET with submicron III-V channel (2010)
  • Author(s): 金澤徹
  • Organizer: Technical Meeting on Electron Devices, IEE of Japan
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-03-26
• [Presentation] Bandwidth Enhancement of Distributed Reflector Lasers at Low Bias Current by Optical Injection Locking (2010)
  • Author(s): S.Lee
  • Organizer: Opt.Fiber Commun.Conf.and National Fiber Optic Eng.Conf.(OFC/NFOEC 2010)
  • Place of Presentation: San Diego, USA
  • Year and Date: 2010-03-24
• [Presentation] 0.18μmCMOSプロセスによるSi APDの高速化の検討 (2010)
  • Author(s): 高松英輝
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 平塚
  • Year and Date: 2010-03-20
• [Presentation] 横方向電流注入レーザの変調特性 (2010)
  • Author(s): 奥村忠嗣
  • Organizer: 第57回応用物理学会関係連合講演会
  • Place of Presentation: 平塚市
  • Year and Date: 2010-03-19
• [Presentation] AlGaInAs/InP埋め込みヘテロ構造レーザにおける再成長界面品質のサーマルクリーニング依存性 (2010)
  • Author(s): 瀧野祐太
  • Organizer: 第57回応用物理学会関係連合講演会
  • Place of Presentation: 平塚市
  • Year and Date: 2010-03-19
• [Presentation] AlGaInAs量子井戸活性層を有する長波長帯レーザトランジスタ変調効率の構造依存性 (2010)
  • Author(s): 白尾瑞基
  • Organizer: 第57回応用物理学会関係連合講演会
  • Place of Presentation: 平塚市
  • Year and Date: 2010-03-19
• [Presentation] 再成長ソースを有するサブミクロンInP/InGaAs nMOSFETの電流電圧特性 (2010)
  • Author(s): 若林和也
  • Organizer: 第57回応用物理学会関係連合講演会
  • Place of Presentation: 平塚市
  • Year and Date: 2010-03-19
• [Presentation] Si基板上へ転写した証系HBTの動作 (2010)
  • Author(s): 磯谷優治
  • Organizer: 第57回応用物理学会関係連合講演会
  • Place of Presentation: 平塚市
  • Year and Date: 2010-03-19
• [Presentation] 縦型InGaAsチャネルMISFETの極微細メサに向けた選択的ウェットエッチング (2010)
  • Author(s): 齋藤尚史
  • Organizer: 第57回応用物理学会関係連合講演会
  • Place of Presentation: 平塚市
  • Year and Date: 2010-03-19
• [Presentation] SiO_2細線埋め込みInP/InGaAs DHBTの作製 (2010)
  • Author(s): 小林嵩
  • Organizer: 第57回応用物理学会関係連合講演会
  • Place of Presentation: 平塚市
  • Year and Date: 2010-03-19
• [Presentation] 光注入同期による活性層分離型分布反射型レーザの変調帯域増大 (2010)
  • Author(s): 李承勲
  • Organizer: 2010年電子情報通信学会
  • Place of Presentation: 仙台市
  • Year and Date: 2010-03-18
• [Presentation] メタマテリアルを有するInP導波路型デバイスにおける光周波数領域での磁気応答 (2010)
  • Author(s): 雨宮智宏
  • Organizer: 第57回応用物理学会関係連合講演会
  • Place of Presentation: 平塚市
  • Year and Date: 2010-03-18
• [Presentation] 共鳴トンネルダイオード発振素子の直接周波数変調とInPショットキーバリアダイオードによる検出 (2010)
  • Author(s): 辛島宏一
  • Organizer: 第57回応用物理学会関係連合講演会
  • Place of Presentation: 平塚市
  • Year and Date: 2010-03-18
• [Presentation] 薄膜バリアによりトンネル時間を短縮した共鳴トンネルダイオードによる基本波発振周波数向上 (2010)
  • Author(s): 鈴木左文
  • Organizer: 第57回応用物理学会関係連合講演会
  • Place of Presentation: 平塚市
  • Year and Date: 2010-03-18
• [Presentation] SOI基板上多層a-Si細線導波路の伝搬特性の評価 (2010)
  • Author(s): 井上敬太
  • Organizer: 第57回応用物理学会関係連合講演会
  • Place of Presentation: 平塚市
  • Year and Date: 2010-03-17
• [Presentation] BCB埋め込みSiスロット導波路の光伝搬損失の評価 (2010)
  • Author(s): 渥美裕樹
  • Organizer: 第57回応用物理学会関係連合講演会
  • Place of Presentation: 平塚市
  • Year and Date: 2010-03-17
• [Presentation] 表面活性化貼付法を用いたInP/Si接合とフォトルミネッセンス特性 (2010)
  • Author(s): 近藤志文
  • Organizer: 第57回応用物理学会関係連合講演会
  • Place of Presentation: 平塚市
  • Year and Date: 2010-03-17
• [Presentation] 波長0.8μm帯におけるアモルファスシリコン光導波路の伝搬損失 (2010)
  • Author(s): 飛鳥井貴弘
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 平塚
  • Year and Date: 2010-03-17
• [Presentation] Dynamic Characteristics of Lateral Current Injection Laser (2010)
  • Author(s): 奥村忠嗣
  • Organizer: Global COE International Symposium
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-03-10
• [Presentation] Improvement in Quantum Efficiency of Lateral Current Injection Laser (2010)
  • Author(s): 伊藤瞳
  • Organizer: Global COE International Symposium
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-03-10
• [Presentation] Investigations of Low Temperature InP/Si Bonding by Surface Activation Process (2010)
  • Author(s): 近藤志文
  • Organizer: Global COE International Symposium
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-03-10
• [Presentation] Characteristics of Si Slot Waveguide Embedded with Benzocyclobutene for Athermal Ring Resonator on SOI (2010)
  • Author(s): 渥美裕樹
  • Organizer: Global COE International Symposium
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-03-10
• [Presentation] GaInAsP Wire Waveguides on Si Substrate Formed by Wafer Bonding with Benzocyclobutene (2010)
  • Author(s): Y.Maeda
  • Organizer: Global COE International Symposium
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-03-10
• [Presentation] Investigation of The Propagation Loss of a-Si Multiple Layer Waveguides (2010)
  • Author(s): 井上敬太
  • Organizer: Global COE International Symposium
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-03-10
• [Presentation] Effects of In-situ Thermal Gleaning for Regrowth Interface Quality of AlGaInAs/InP Buried Heterostructure Lasers by OMVPE (2010)
  • Author(s): 瀧野祐太
  • Organizer: Global COE Int.Symp.
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-03-10
• [Presentation] Low-power Consumption Distributed Reflector(DR)Laser with Wirelike Active Regions (2010)
  • Author(s): 進藤隆彦
  • Organizer: Global COE Int.Symp.
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-03-10
• [Presentation] Bandwidth Enhancement of Distributed Reflector Lasers with Wirelike Active Regions by Optical Injection Locking (2010)
  • Author(s): S.H.Lee
  • Organizer: Global COE Int.Symp.
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-03-10
• [Presentation] Highmesa GaInAsP/InP Lasers Buried in Benzocyclobutene towards High-Speed Distributed Reflector Lasers (2010)
  • Author(s): D.Takahashi
  • Organizer: Global COE Int.Symp.
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-03-10
• [Presentation] Theoretical Analysis of a AlGaInAs/InP Long-Wavelength Laser Transistor (2010)
  • Author(s): 白尾瑞基
  • Organizer: Global COE Int.Symp.
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-03-10
• [Presentation] Improvement of Modulation Speed of Semiconductor THz/Optical Direct Media Convertor (2010)
  • Author(s): Y.Numajiri
  • Organizer: Global COE International Symposium
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-03-10
• [Presentation] Room-Temperature Terahertz Oscillators Using Electron Devices (2010)
  • Author(s): M.Asada
  • Organizer: Global COE International Symposium
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-03-10
• [Presentation] Sub-Terahertz Resonant Tunneling Diode Oscillators with High Output Power Using Offset-Fed Slot Antenna and High Current Density (2010)
  • Author(s): 白石誠人
  • Organizer: Global COE International Symposium
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-03-10
• [Presentation] Detection of Output Power from Sub-THz InP-Based Resonant Tunneling Diode Oscillator Using Ni-InP Schottky Barrier Diode (2010)
  • Author(s): 辛島宏一
  • Organizer: Global COE International Symposium
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-03-10
• [Presentation] Frequency Increase of Resonant Tunneling Diode Oscillator in THz Range (2010)
  • Author(s): 鈴木左文
  • Organizer: Global COE International Symposium
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-03-10
• [Presentation] Selective undercut etching for ultra narrow mesa structure in vertical InGaAs channel MISFET (2010)
  • Author(s): 齋藤尚史
  • Organizer: Global COE International Symposium
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-03-10
• [Presentation] Low-power Consumption Lasers for Monolithic Integration (2010)
  • Author(s): 荒井滋久
  • Organizer: Global COE International Symposium
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-03-09
• [Presentation] Resonant Tunneling Diode Oscillators in the Terahertz Range at Room Temperature toward High Frequency, High Output Power, and High Functionality (2010)
  • Author(s): M.Asada
  • Organizer: Joint Technical Meeting of Japan.Appl.Phys.Soc., THz Tech.Meeting & IEICE of Japan, THz Applied System Meeting
  • Place of Presentation: Miyagi, Japan
  • Year and Date: 2010-02-26
• [Presentation] Demonstration of waveguide optical device with negative-refractive-index layer (2010)
  • Author(s): 雨宮智宏
  • Organizer: Technical Report of IEICE
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2010-01-29
• [Presentation] Resonant Tunneling Diodes for Terahertz Oscillators at Room Temperature (2010)
  • Author(s): 鈴木左文
  • Organizer: Japan.Appl.Phys.Soc., Applied Solid State Physics Division
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-01-29
• [Presentation] Transistors in terahertz range (2010)
  • Author(s): Y.Miyamoto
  • Organizer: Japan.Appl.Phys.Soc., Applied Solid State Physics Division
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-01-29
• [Presentation] Optical Injection Locking of Distributed Reflector Lasers with Wirelike Active Regions (2010)
  • Author(s): S.Lee
  • Organizer: Technical Report of IEICE
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2010-01-28
• [Presentation] InP/InGaAs composite channel MOSFET with Al_2O_3 gate dielectric (2010)
  • Author(s): 金澤徹
  • Organizer: IEICE Technical Report of meeting on Electron Devices
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-01-14
• [Presentation] Deviation from Proportional Relationship Between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density (2010)
  • Author(s): 山田真之
  • Organizer: IEICE Technical Report of meeting on Electron Devices
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-01-14
• [Presentation] Membrane-Type Photonic Devices for Optical Circuits on SOI (2010)
  • Author(s): S. Arai and N. Nishiyama
  • Organizer: 2010 Int. Conf. on Solid State Devices and Materials(SSDM 2010)
  • Place of Presentation: Tokyo, Japan
• [Presentation] Continuous Wave Operation of GaInAsP/InP Thin Film Llateral Current Injection Lasers on SI-InP (2009)
  • Author(s): 奥村忠嗣
  • Organizer: Technical Report of IEICE
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2009-12-11
• [Presentation] Design of left-handed light controlling device for optical frequency (2009)
  • Author(s): 雨宮智宏
  • Organizer: Technical Report of IEICE
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2009-12-11
• [Presentation] Resonant Tunneling Diodes for Terahertz Oscillators at Room Temperature (2009)
  • Author(s): M.Asada
  • Organizer: Int.Workshop on Terahertz Technology
  • Place of Presentation: Osaka, Japan
  • Year and Date: 2009-12-02
• [Presentation] Theoretical Study of Antenna Integrated NDR-DCT Oscillator for Variable Oscillation Frequency in THz Band (2009)
  • Author(s): K.Furuya
  • Organizer: Int.Workshop on Terahertz Technology
  • Place of Presentation: Osaka, Japan
  • Year and Date: 2009-12-02
• [Presentation] Vertical InGaAs FET with hetero-launcher and undoped channel (2009)
  • Author(s): Y.Miyamoto
  • Organizer: International Symposium on Advanced Nanodevices and Nanotechnology(ISANN)
  • Place of Presentation: Maui, HI, USA
  • Year and Date: 2009-12-02
• [Presentation] Resonant Tunneling Diodes Oscillating at Around 900GHz with Spike Doping Structures for Low Bias Voltage Operation (2009)
  • Author(s): K.Sawada
  • Organizer: Int.Workshop on Terahertz Technology
  • Place of Presentation: Osaka, Japan
  • Year and Date: 2009-12-01
• [Presentation] Resonant Tunneling Diode Terahertz(0.8-0.9THz)Oscillators with Spike Doping for Low Voltage Operation (2009)
  • Author(s): K.Sawada
  • Organizer: IEICE Technical Report on Electron Device Meeting
  • Place of Presentation: Osaka, Japan
  • Year and Date: 2009-11-30
• [Presentation] PMMAを用いたSi導波路とガラス基板との平坦化貼付 (2009)
  • Author(s): 江渕真伍
  • Organizer: 平成21年度応用物理学会北陸・信越支部学術講演会
  • Place of Presentation: 富山
  • Year and Date: 2009-11-22
• [Presentation] Left-handed Light Controlling Device for Optical Frequency (2009)
  • Author(s): 雨宮智宏
  • Organizer: Int.Symp.on Quantum Nanophotonics and Nanoelectronics(ISQNN-2009)
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2009-11-20
• [Presentation] Improved Quantum Efficiency of Lateral Current Injection Type Fabry-Perot Lasers (2009)
  • Author(s): 伊藤瞳
  • Organizer: Int.Symposium on Quantum Nanophotonics and Nanoelectronics
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2009-11-19
• [Presentation] Athermal Wavelength Property of Si-Slot Ring Resonator Embedded with Benzocyclobutene (2009)
  • Author(s): 渥美裕樹
  • Organizer: Technical Meeting of IEICE
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2009-11-18
• [Presentation] Surface Activated Bonding of InP/Si Structure and Its Photoluminescence Characterization (2009)
  • Author(s): 近藤大介
  • Organizer: Technical Meeting of IEICE
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2009-11-18
• [Presentation] Lateral Current Injection Lasers for Membrane Semiconductor Light Sources toward Optical Interconnection (2009)
  • Author(s): 奥村忠嗣
  • Organizer: Technical Meeting of IEICE
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2009-11-18
• [Presentation] Waveguide Type Lateral Junction Photodiode Toward Membrane Based Photonic Circuit (2009)
  • Author(s): 近藤大介
  • Organizer: Technical Meeting of IEICE
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2009-11-18
• [Presentation] CMOSプロセスによる正孔注入型および電子注入型APDの試作と評価 (2009)
  • Author(s): 高松英輝
  • Organizer: 電子情報通信学会シリコンフォトニクス研究会
  • Place of Presentation: 東京
  • Year and Date: 2009-11-18
• [Presentation] CMOS標準プロセスを用いたポリシリコン光導波路 (2009)
  • Author(s): 飛鳥井貴弘
  • Organizer: 電子情報通信学会シリコンフォトニクス研究会
  • Place of Presentation: 東京
  • Year and Date: 2009-11-18
• [Presentation] InGaAs/InP MISFET (2009)
  • Author(s): Y.Miyamoto
  • Organizer: Int.Symposium on Silicon Nano Devices in 2030
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2009-10-14
• [Presentation] Resonant Tunneling Diode with Very High Peak Current Density for Terahertz Oscillators (2009)
  • Author(s): A.Teranishi
  • Organizer: Int.Symposium on Silicon Nano Devices in 2030
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2009-10-13
• [Presentation] Amorphous Polyethylene Terephthalate Optical Channel Waveguide (2009)
  • Author(s): 飯山宏一
  • Organizer: the 2009 International Conference on Solid State Devices and Materials(SSDM 2009)
  • Place of Presentation: Sendai, Japan
  • Year and Date: 2009-10-08
• [Presentation] Silicon Lateral Avalanche Photodiodes Fabricated by Standard 0.18μm Complementally Metal-Oxide-Semiconductor Process (2009)
  • Author(s): 飯山宏一
  • Organizer: the 2009 International Conference on Solid State Devices and Materials(SSDM 2009)
  • Place of Presentation: Sendai, Japan
  • Year and Date: 2009-10-08
• [Presentation] Fabrication of InP/InGaAs Undoped Channel MOSFET with Selectively Regrown N+-InGaAs Source Region (2009)
  • Author(s): 金澤徹
  • Organizer: 2009 Int.Conf.Solid State Devices and Materials(SSDM 2009)
  • Place of Presentation: Miyagi, Japan
  • Year and Date: 2009-10-07
• [Presentation] Silicon Lateral Avalanche Photodiodes Fabricated by Standard 0.18μm CMOS Process (2009)
  • Author(s): 飯山宏一
  • Organizer: the 35th European Confernce on Optical Communication(ECOC 2009)
  • Place of Presentation: Vienna, Austria
  • Year and Date: 2009-09-23
• [Presentation] Detection of Output Power from Sub-THz InP-Based Resonant Tunneling Diode Oscillator Using Ni-InP Schottky Barrier Diode (2009)
  • Author(s): R.Yokoyama
  • Organizer: Int.Conf.Infrared and Millimeterwave & Terahertz Electronics(IRMMW-THz 2009)
  • Place of Presentation: Busan, Korea
  • Year and Date: 2009-09-22
• [Presentation] High Power THz Oscillators with Offset-fed Slot Antenna and High Current Density Resonant Tunneling Diodes (2009)
  • Author(s): K.Hinata
  • Organizer: Int.Conf.Infrared and Millimeterwave & Terahertz Electronics(IRMMW-THz 2009)
  • Place of Presentation: Busan, Korea
  • Year and Date: 2009-09-22
• [Presentation] Fundamental Oscillation up to 915GHz in InGaAs/AlAs Resonant Tunneling Diodes Integrated with Slot Antennas (2009)
  • Author(s): 白石誠人
  • Organizer: Int.Conf.Infrared and Millimeterwave & Terahertz Electronics(IRMMW-THz 2009)
  • Place of Presentation: Busan, Korea
  • Year and Date: 2009-09-22
• [Presentation] BCB埋め込みSiスロット導波路構造を用いた温度無依存波長フィルタ (2009)
  • Author(s): 渥美裕樹
  • Organizer: The 2009 IEICE Society Conf.
  • Place of Presentation: 新潟市
  • Year and Date: 2009-09-15
• [Presentation] Mach-Zehnder Interferometric Optical Switch using MEMS Phase Shifter (2009)
  • Author(s): 稲本慎
  • Organizer: the 10th International Conference on Numerical Simulation of Optoelectronic Devices(NUSOD 2009)
  • Place of Presentation: Gwangju, Korea
  • Year and Date: 2009-09-14
• [Presentation] M系列疑似ランダム光信号を用いた距離計測システムの構築 (2009)
  • Author(s): 堺雅晃
  • Organizer: 平成21年度電気関係学会北陸支部連合大会
  • Place of Presentation: 石川
  • Year and Date: 2009-09-13
• [Presentation] CMOSプロセスを用いたポリシリコン光導波路の作製 (2009)
  • Author(s): 飛鳥井貴弘
  • Organizer: 平成21年度電気関係学会北陸支部連合大会
  • Place of Presentation: 石川
  • Year and Date: 2009-09-12
• [Presentation] Athermal Wavelength Property of Si-Slot Ring Resonator Embedded with Benzocyclobutene (2009)
  • Author(s): 渥美裕樹
  • Organizer: The 6th IEEE Int.Conf.on Group IV Photonics(GFP)
  • Place of Presentation: San Francisco, USA
  • Year and Date: 2009-09-10
• [Presentation] 横方向電流注入型ファブリ・ペローレーザの微分最子効率改善 (2009)
  • Author(s): 伊藤瞳
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山市
  • Year and Date: 2009-09-10
• [Presentation] シリコン上薄膜光回路のための横方向接合導波路型フォトダイオード (2009)
  • Author(s): 近藤大介
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山市
  • Year and Date: 2009-09-10
• [Presentation] SiO_2細線埋込InP系HBTにおけるCBr_4を使った in-situ エッチング (2009)
  • Author(s): 武部直明
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山市
  • Year and Date: 2009-09-10
• [Presentation] 10.18μmCMOSプロセスによる広帯域・高利得Si APDの設計と評価 (2009)
  • Author(s): 高松英輝
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山
  • Year and Date: 2009-09-10
• [Presentation] 有機材料のみを用いた垂直共振器面発光レーザのしきい値電流密度解析 (2009)
  • Author(s): 丸山武男
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山
  • Year and Date: 2009-09-10
• [Presentation] Si基板上ハイブリッドIII-V族半導体薄膜光デバイス (2009)
  • Author(s): 荒井滋久
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山市
  • Year and Date: 2009-09-09
• [Presentation] GaInAs/AlAs共鳴トンネルダイオードの831GHz基本波発振 (2009)
  • Author(s): 鈴木左文
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山市
  • Year and Date: 2009-09-09
• [Presentation] GaInAs/AlAs共鳴トンネルダイオードの面積縮小化による915GHzの基本波発振 (2009)
  • Author(s): 白石誠人
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山市
  • Year and Date: 2009-09-09
• [Presentation] 平放射用テーパードスロットアンテナを集積した共鳴トンネルダイオードサブテラヘルツ発振素子 (2009)
  • Author(s): 鈴木左文
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山市
  • Year and Date: 2009-09-09
• [Presentation] Ni-InPショットキーバリアダイオードによる550GHz共鳴トンネルダイオード出力のヘテロダイン検出 (2009)
  • Author(s): 辛島宏一
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山市
  • Year and Date: 2009-09-09
• [Presentation] MEMSを用いた方向性結合器型光ルーティング素子の解析 (2009)
  • Author(s): 稲本慎
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山
  • Year and Date: 2009-09-09
• [Presentation] 縦型InGaAs-MISFETの試作 (2009)
  • Author(s): 楠崎智樹
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山市
  • Year and Date: 2009-09-08
• [Presentation] ヘテロランチャと真性チャネルを有する縦型InGaAs-MISFETの高駆動能力動作 (2009)
  • Author(s): 齋藤尚史
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山市
  • Year and Date: 2009-09-08
• [Presentation] 再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性 (2009)
  • Author(s): 若林和也
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山市
  • Year and Date: 2009-09-08
• [Presentation] HBTにおける超高速動作時エミッタ充電時間の理論的解析 (2009)
  • Author(s): 山田真之
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山市
  • Year and Date: 2009-09-08
• [Presentation] アモルファスPETを用いたチャネル光導波路 (2009)
  • Author(s): 飯山宏一
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山
  • Year and Date: 2009-09-08
• [Presentation] MOVPE再成長n^+-ソースを有するIII-V族高移動度チャネルMOSFET (2009)
  • Author(s): 金澤徹
  • Organizer: IEE of Japan(Special Session on Compound Semiconductor Electron Devices for More Moore More than Moore)
  • Place of Presentation: 徳島市
  • Year and Date: 2009-09-04
• [Presentation] 超薄層InAlP/InGaAsヘテロ接合のMOVPE成長と超高速電子デバイスへの応用 (2009)
  • Author(s): 杉山弘樹
  • Organizer: IEE of Japan(Special Session on Compound Semiconductor Electron Devices for More Moore More than Moore)
  • Place of Presentation: 徳島市
  • Year and Date: 2009-09-04
• [Presentation] レート方程式によるAlGaInAs長波長帯レーザトランジスタの動作解析 (2009)
  • Author(s): 白尾瑞基
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山市
  • Year and Date: 2009-09-02
• [Presentation] Sub-Terahertz Resonant Tunneling Diode Oscillators Integrated with Tapered Slot Antennas for Horizontal Radiation (2009)
  • Author(s): 鈴木左文
  • Organizer: Topical Workshop on Heterostructure Materials(TWHM 2009)
  • Place of Presentation: Nagano, Japan
  • Year and Date: 2009-08-28
• [Presentation] In-situ Etching in MOVPE for Thin Collector of InP HBT with Buried SiO_2 Wire (2009)
  • Author(s): Y.Miyamoto
  • Organizer: Topical Workshop on Heterostructure Materials(TWHM 2009)
  • Place of Presentation: Nagano, Japan
  • Year and Date: 2009-08-26
• [Presentation] Monte Carlo Analysis of Base Transit Times of InP/Gaines Heterojunction Bipolar Transistors with Ultrathin Bases (2009)
  • Author(s): T.Uesawa
  • Organizer: Topical Workshop on Heterostructure Materials(TWHM 2009)
  • Place of Presentation: Nagano, Japan
  • Year and Date: 2009-08-26
• [Presentation] High External Feedback Tolerance of Distributed Reflector Lasers with Wirelike Active Regions (2009)
  • Author(s): S.Lee
  • Organizer: Int.Nano-Optoelectronics Workshop 2009(i-NOW2009)
  • Place of Presentation: Stockholm, Sweden, Berlin, Germany
  • Year and Date: 2009-08-12
• [Presentation] Analysis of antenna integrated NDR-DCT oscillator for variable oscillation frequency in THz band (2009)
  • Author(s): K.Furuya
  • Organizer: Int.Conf.Modulated Semiconductor Structures(MSS-14)
  • Place of Presentation: Kobe, Japan
  • Year and Date: 2009-07-16
• [Presentation] Sub-Terahertz-Terahertz Oscillating resonant Tunneling Diode (2009)
  • Author(s): 鈴木左文
  • Organizer: Technical Report on Silicon Nanodevice Integration Technology, IEE of Japan
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2009-07-15
• [Presentation] InGaAs/InP MISFET with epitaxially grown source (2009)
  • Author(s): Y.Miyamoto
  • Organizer: 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD)
  • Place of Presentation: Busan, Korea
  • Year and Date: 2009-06-25
• [Presentation] Evaluation of collector current spreading of InGaAs SHBT with 75-nm-thick collector (2009)
  • Author(s): Y.Miyamoto
  • Organizer: 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD)
  • Place of Presentation: Busan, Korea
  • Year and Date: 2009-06-25
• [Presentation] 緑色帯有機半導体VCSELのしきい値電流密度解析 (2009)
  • Author(s): 丸山武男
  • Organizer: 第8回有機EL討論会
  • Place of Presentation: 東京
  • Year and Date: 2009-06-20
• [Presentation] High Optical Feedback-Tolerance of Distributed Reflector Lasers with Wire-like Active Regions for High Speed Isolator-Free Operation (2009)
  • Author(s): S.Lee
  • Organizer: Conf.on Lasers and Electro Optics/Int.Quantum Electronics Conf.(CLEO/IQEC)2009
  • Place of Presentation: Baltimore, USA
  • Year and Date: 2009-06-19
• [Presentation] MBMSを位相制御器としたマッハ・ツェンダ干渉計型光スイッチの検討 (2009)
  • Author(s): 稲本慎
  • Organizer: 電子情報通信学会レーザ・量子エレクトロニクス研究会
  • Place of Presentation: 東京
  • Year and Date: 2009-06-19
• [Presentation] In-situ etching by CBr_4 in InP heterojunction bipolar transistors with buried SiO_2 wire (2009)
  • Author(s): 武部直明
  • Organizer: IEICE Technical Report of meeting on Electron Devices
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2009-06-12
• [Presentation] Subterahertz-Terahertz Room-Temperature Oscillators with Resonant Tunneling Diodes (2009)
  • Author(s): M.Asada
  • Organizer: Japan.Appl.Phys.Soc., Light Sensing Technology Meeting
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2009-06-09
• [Presentation] Progress in Distributed-Reflector(DR)Lasers with Wirelke Active Regions (2009)
  • Author(s): 進藤隆彦
  • Organizer: Technical Report of IEICE
  • Place of Presentation: 金沢市
  • Year and Date: 2009-05-22
• [Presentation] Properties of High Index-Contrast Wired GaInAsP Waveguides with Benzocyclobutene on Si Substrate (2009)
  • Author(s): 榎本晴基
  • Organizer: The 21st Int.Conf.on Indium Phosphide and Related Materials(IPRM 2009)
  • Place of Presentation: Newport Beach, USA
  • Year and Date: 2009-05-14
• [Presentation] Room-Temperature CW Operation of Lateral Current Injection Lasers with Thin Film Lateral Cladding Layers (2009)
  • Author(s): 奥村忠嗣
  • Organizer: The 21st Int.Conf.on Indium Phosphide and Related Materials(IPRM 2009)
  • Place of Presentation: Newport Beach, USA
  • Year and Date: 2009-05-13
• [Presentation] III-V/SOI Heterogeneous Photonic Integrated Devices for Optical Interconnection in LSI (2009)
  • Author(s): N.Nishiyama
  • Organizer: The 21st Int.Conf.on Indium Phosphide and Related Materials(IPRM 2009)
  • Place of Presentation: Newport Beach, USA
  • Year and Date: 2009-05-13
• [Presentation] Ultra-Thin InAlP/InGaAs Heterojunctions Grown by Metal-Organic Vapor-Phase Epitaxy (2009)
  • Author(s): 杉山弘樹
  • Organizer: The 21st Int.Conf.Indium Phosphide and Related Materials(IPRM2009)
  • Place of Presentation: Newport Beach, USA
  • Year and Date: 2009-05-13
• [Presentation] Vertical InGaAs MOSFET with Hetero-Launcher and Undoped Channel (2009)
  • Author(s): 齋藤尚史
  • Organizer: The 21st Int.Conf.Indium Phosphide and Related Materials(IPRM2009)
  • Place of Presentation: Newport Beach, USA
  • Year and Date: 2009-05-13
• [Presentation] InP/InGaAs-channel MOSFET with MOVPE Selective Regrown Source (2009)
  • Author(s): 金澤徹
  • Organizer: The 21st Int.Conf.Indium Phosphide and Related Materials(IPRM2009)
  • Place of Presentation: Newport Beach, USA
  • Year and Date: 2009-05-13
• [Presentation] Lateral Current Injection Type GaInAsP/InP DFB Lasers on SI-InP Substrate (2009)
  • Author(s): 奥村忠嗣
  • Organizer: The 21st Int.Conf.on Indium Phosphide and Related Materials(IPRM 2009)
  • Place of Presentation: Newport Beach, USA
  • Year and Date: 2009-05-12
• [Presentation] Low-threshold and High-efficiency Operation of Distributed Reflector Laser with Wirelike Active Regions by Reduced Waveguide Loss (2009)
  • Author(s): S.Lee
  • Organizer: The 21st Int.Conf.on Indium Phosphide and Related Materials(IPRM 2009)
  • Place of Presentation: Newport Beach, USA
  • Year and Date: 2009-05-12
• [Presentation] Fundamental Oscillation up to 831GHz in GaInAs/AlAs Resonant Tunneling Diode (2009)
  • Author(s): 鈴木左文
  • Organizer: The 21st Int.Conf.Indium Phosphide and Related Materials(IPRM2009)
  • Place of Presentation: Newport Beach, USA
  • Year and Date: 2009-05-12
• [Presentation] Si上BCB貼付型強光閉じ込めGaInAsP細線導波路の特性 (2009)
  • Author(s): 榎本晴基
  • Organizer: 第56回応用物理学会関係連合講演会
  • Place of Presentation: つくば市
  • Year and Date: 2009-04-02
• [Presentation] 超薄屑InAlP/InGaAsヘテロ接合のMOVPE成長 (2009)
  • Author(s): 杉山弘樹
  • Organizer: 第56回応用物理学会関係連合講演会
  • Place of Presentation: つくば市
  • Year and Date: 2009-04-02
• [Presentation] 半絶縁性基板上の横方向注入型DFBレーザ (2009)
  • Author(s): 奥村忠嗣
  • Organizer: 第56回応用物理学会関係連合講演会
  • Place of Presentation: つくば市
  • Year and Date: 2009-04-01
• [Presentation] 横方向電流注入型ファブリ・ペローレーザの室温連続動作 (2009)
  • Author(s): 奥村忠嗣
  • Organizer: 第56回応用物理学会関係連合講演会
  • Place of Presentation: つくば市
  • Year and Date: 2009-04-01
• [Presentation] BCB埋め込みSiスロット導波路による波長フィルタの温度無依存化の検討 (2009)
  • Author(s): 渥美裕樹
  • Organizer: 第56回応用物理学会関係連合講演会
  • Place of Presentation: つくば市
  • Year and Date: 2009-04-01
• [Presentation] 細線状活性層を有する分布反射型(DR)レーザの低しきい値・高効率動作 (2009)
  • Author(s): 進藤隆彦
  • Organizer: 第56回応用物理学会関係連合講演会
  • Place of Presentation: つくば市
  • Year and Date: 2009-04-01
• [Presentation] 光生成キャリア変調による光信号からサブテラヘルツ信号への直接変換速度特性 (2009)
  • Author(s): 沼尻祐貴
  • Organizer: 第56回応用物理学会関係連合講演会
  • Place of Presentation: つくば市
  • Year and Date: 2009-03-31
• [Presentation] GaInAs/AlAs共鳴トンネルダイオードの831GHz基本波発振 (2009)
  • Author(s): 鈴木左文
  • Organizer: 第56回応用物理学会関係連合講演会
  • Place of Presentation: つくば市
  • Year and Date: 2009-03-31
• [Presentation] オフセット給電スロットアンテナと高電流密度RTDによるテラヘルツ発振器の高出力化 (2009)
  • Author(s): 日向健介
  • Organizer: 第56回応用物理学会関係連合講演会
  • Place of Presentation: つくば市
  • Year and Date: 2009-03-31
• [Presentation] 超薄層InAlP/InGaAsヘテロ接合のMOVPE成長 (2009)
  • Author(s): 寺西豊志
  • Organizer: 第56回応用物理学会関係連合講演会
  • Place of Presentation: つくば市
  • Year and Date: 2009-03-31
• [Presentation] 負性抵抗デュアルチャネルトランジスタを用いたアンテナー体型テラヘルツ発振素子の発振周波数制御 (2009)
  • Author(s): 浅田雅洋
  • Organizer: 第56回応用物理学会関係連合講演会
  • Place of Presentation: つくば市
  • Year and Date: 2009-03-31
• [Presentation] 超薄層ベースInP/GaInAsHBTの組成傾斜によるベース走行時間短縮 (2009)
  • Author(s): 上澤岳史
  • Organizer: 第56回応用物理学会関係連合講演会
  • Place of Presentation: つくば市
  • Year and Date: 2009-03-31
• [Presentation] ヘテロランチャと真性チャネルを有する縦型InGaAs-MOSFET (2009)
  • Author(s): 齋藤尚史
  • Organizer: 第56回応用物理学会関係連合講演会
  • Place of Presentation: つくば市
  • Year and Date: 2009-03-31
• [Presentation] シリコン基板上半導体レーザ・発光デバイスの現状 (2009)
  • Author(s): 西山伸彦
  • Organizer: 電子情報通信学会2009年全国大会
  • Place of Presentation: 松山市
  • Year and Date: 2009-03-18
• [Presentation] 細線状活性層を有する分布反射型レーザの反射戻り光耐性 (2009)
  • Author(s): 李承勲
  • Organizer: 電子情報通信学会2009年全国大会
  • Place of Presentation: 松山市
  • Year and Date: 2009-03-18
• [Presentation] III-Vナノデバイス (2009)
  • Author(s): 宮本恭幸
  • Organizer: 電子情報通信学会2009年全国大会
  • Place of Presentation: 松山市
  • Year and Date: 2009-03-18
• [Presentation] ヘテロランチャと真性チャネルを有する縦型InGaAs-MOSFETの作製 (2009)
  • Author(s): 齋藤尚史
  • Organizer: 電気学会電子デバイス研究会
  • Place of Presentation: 静岡県熱海市
  • Year and Date: 2009-03-09
• [Presentation] Frequency Switching with Bias Polarity in Resonant Tunneling Diodes Oscillating at Around 600GHz (2009)
  • Author(s): S. Suzuki
  • Organizer: Optical Terahertz Science and Technology
  • Place of Presentation: Santa Barbara/CA, USA
  • Year and Date: 2009-03-08
• [Presentation] InGaAs MISFET with hetero-launcher (Invited) (2009)
  • Author(s): Y. Miyamoto
  • Organizer: 2009 RCIQE International Seminar on "Advanced Semiconductor Materials and Devices"
  • Place of Presentation: Sapporo (Japan)
  • Year and Date: 2009-03-03
• [Presentation] 絶超薄層ベースInP系HBTにおけるGraded Baseによるベース走行時間短縮 (2009)
  • Author(s): 上澤岳史
  • Organizer: 電子情報通信学会電子デバイス研究会
  • Place of Presentation: 東京都港区
  • Year and Date: 2009-01-15
• [Presentation] III-V/SOI Heterogeneous Photonic Integrated Devices for Optical Interconnection in LSI (2009)
  • Author(s): N. Nishiyama, T. Maruyama, and S. Arai
  • Organizer: The 21st Int. Conf. on Indium Phosphide and Related Materials(IPRM 2009)
  • Place of Presentation: Newport Beach, CA, USA, WB1-1
• [Presentation] III-V/SOI Heterogeneous Photonic Integrated Devices for Optical Interconnection in LSI (2009)
  • Author(s): N. Nishiyama, T. Maruyama, S. Arai
  • Organizer: The 21st Int. Conf. on Indium Phosphide and Related Materials (IPRM 2009)
  • Place of Presentation: Newport Beach, CA, USA, WB1-1
• [Presentation] Fabrication of vertical InGaAs channel MISFET with heterostructure launcher and undoped channel (2009)
  • Author(s): 齋藤尚史
  • Organizer: Int.Symposium on Silicon Nano Devices in 2030
  • Place of Presentation: Tokyo, Japan
• [Presentation] InP/In_<0.53>Ga_<0.47>As composite channel n-MOSFETwith heavily dopedregrown source/drain structure (2009)
  • Author(s): 若林和也
  • Organizer: Int.Symposium on Silicon Nano Devices in 2030
  • Place of Presentation: Tokyo, Japan
• [Presentation] テラヘルツ信号の光生成キャリアによる光信号からの直接変換 (2008)
  • Author(s): 沼尻祐貴
  • Organizer: 電子情報通信学会デバイス研究会技術研究報告
  • Place of Presentation: 仙台
  • Year and Date: 2008-12-20
• [Presentation] 半導体薄膜レーザ実現に向けた半絶縁性基板上GaInAsP薄膜への横注入型レー (2008)
  • Author(s): 奥村忠嗣
  • Organizer: 電子情報通信学会レーザ・量子エレクトロニクス研究会
  • Place of Presentation: 東京
  • Year and Date: 2008-12-12
• [Presentation] Direct Conversion from Optical Signal to Terahertz signal Using Photon Generated Free Carriers (2008)
  • Author(s): Y. Numajiri
  • Organizer: Technical Report of IEICE
  • Place of Presentation: Miyagi, (Japan)
  • Year and Date: 2008-12-08
• [Presentation] Direct Conversion to Sub-THz Signal from 1.55-μm Optical Signal Using Photon-Generated Free-Carriers (2008)
  • Author(s): M. Shirao
  • Organizer: The 21st Annu. Meeting of The IEEE Lasers & Electro-Optics Society (LEOS Annu. Meeting 2008)
  • Place of Presentation: Newport Beach (USA)
  • Year and Date: 2008-11-11
• [Presentation] SOI上の半導体薄膜レ (2008)
  • Author(s): 荒井滋久
  • Organizer: 電子情報通信学会シリコンフォトニクス研究会
  • Place of Presentation: 東京
  • Year and Date: 2008-11-07
• [Presentation] RF Characteristics of Schottky-Gate-Controlled Hot Electron Transistor (2008)
  • Author(s): Y. Miyamoto
  • Organizer: IEEE Nanotechnology Materials and Devices Conference 2008
  • Place of Presentation: Kyoto (Japan)
  • Year and Date: 2008-10-22
• [Presentation] Top-Air-Cladding GaInAsP/InP Lateral Current Injection Type Lasers (2008)
  • Author(s): T. Okumura
  • Organizer: The 2nd IEEE Nanotechnology Materials and Device Conf. 2008 (NMDC 2008)
  • Place of Presentation: Kyoto (Japan)
  • Year and Date: 2008-10-20
• [Presentation] Loss Reduction of Si WireWaveguide on SOI Substrate Prepared by Parallel Plate RIE using Double Layered Resist Mask with C_<60> (2008)
  • Author(s): K. Inoue
  • Organizer: The 2nd IEEE Nanotechnology Materials and Device Conf. 2008 (NMDC 2008)
  • Place of Presentation: Kyoto (Japan)
  • Year and Date: 2008-10-20
• [Presentation] テーパードスロットアンテナを集積した水平放射型サブTHzRTD発振器 (2008)
  • Author(s): 浦山健太
  • Organizer: 応用物理学会テラヘルツ電磁波技術研究会
  • Place of Presentation: 広島
  • Year and Date: 2008-10-13
• [Presentation] Nanophotonics and Terahertz Devices (2008)
  • Author(s): M. Asada
  • Organizer: Russia-Japan Young Scientist Conference on Nanomaterials and Nanotechnology
  • Place of Presentation: Moscow, Russia
  • Year and Date: 2008-10-09
• [Presentation] 電子デバイスによるテラヘルツ光源 (2008)
  • Author(s): 浅田雅洋
  • Organizer: EMC関西
  • Place of Presentation: 神戸
  • Year and Date: 2008-09-25
• [Presentation] SOI基板上のアクティブ光デバイス (2008)
  • Author(s): 荒井滋久
  • Organizer: 電子情報通信学会2008年ソサイエティ大会
  • Place of Presentation: 川崎市
  • Year and Date: 2008-09-18
• [Presentation] Sub-THz RTD Oscillators Integrated with Planar Horn Antennas for Horizontal Radiation (2008)
  • Author(s): K.Urayama
  • Organizer: Int. Conf. Infrared, Milimeter Wave, and THz Elertmnirc
  • Place of Presentation: Pasadena/CA, USA
  • Year and Date: 2008-09-16
• [Presentation] 光生成キャリア変調による光信号のテラヘルツ・サブテラヘルツ信号への直接変換 (2008)
  • Author(s): 沼尻祐貴
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県春日井市
  • Year and Date: 2008-09-04
• [Presentation] InP/InGaAsHBTベース層におけるプラズモン散乱のモンテカルロ解析 (2008)
  • Author(s): 上澤岳史
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県春日井市
  • Year and Date: 2008-09-04
• [Presentation] EB露光により作製したエミッタ幅200nmのInP/InGaAsSHBT (2008)
  • Author(s): 高橋新之助
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県春日井市
  • Year and Date: 2008-09-04
• [Presentation] 絶縁ゲート制御型ホットエレクトロントランジスタのゲート制御能力向上 (2008)
  • Author(s): 齋藤尚史
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県春日井市
  • Year and Date: 2008-09-04
• [Presentation] 水平方向に放射するホーンアンテナを集積したサブTHzRTD発振器 (2008)
  • Author(s): 浦山健太
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県春日井市
  • Year and Date: 2008-09-03
• [Presentation] ボウタイアンテナ集積型Ni-InPショットキーバリアダイオードの作製とTHz信号検出 (2008)
  • Author(s): 横山亮
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県春日井市
  • Year and Date: 2008-09-03
• [Presentation] Two Models for Electro-Magnetic Wave Amplifier by Utilizing Travelling Electron Beam (2008)
  • Author(s): M.Asada
  • Organizer: Numerical Simulation of Optoelectronic Devices
  • Place of Presentation: Nottingham, UK
  • Year and Date: 2008-09-02
• [Presentation] OMVPE再成長法による薄膜クラッド層を有する横方向電流注入型レーザ (2008)
  • Author(s): 黒川宗高
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県春日井市
  • Year and Date: 2008-09-02
• [Presentation] 自己注入同期による分布反射型(DR)レーザの直接変調帯域の増大 (2008)
  • Author(s): デイビス・カイル
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県春日井市
  • Year and Date: 2008-09-02
• [Presentation] 位相シフトDFB領域と受動DBR領域を有する分布反射型(DR)レーザの低電流動作 (2008)
  • Author(s): 進藤隆彦
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県春日井市
  • Year and Date: 2008-09-02
• [Presentation] 長波長帯レーザトランジスタ実現へ向けたベース層の構造設計 (2008)
  • Author(s): 白尾瑞基
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県春日井市
  • Year and Date: 2008-09-02
• [Presentation] An Analysis of THz Oscillator using Negative Differential Resistance Dual Channel Transistor (NDR-DCT) and Integrated Antenna (2008)
  • Author(s): K. Furuya
  • Organizer: Int. Conf. Solid State Devices and Materials
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 2008-08-25
• [Presentation] Sub-THz and THz Oscillators at Room Temperature Using Electron Devices (2008)
  • Author(s): M. Asada
  • Organizer: International Nano-Optoelectronics Workshop
  • Place of Presentation: Hayama, Japan
  • Year and Date: 2008-08-12
• [Presentation] InP-Based VCSELs with AlGaInAs/InP DBR and Their Applications (2008)
  • Author(s): N. Nishiyama
  • Organizer: Int. Nano-Optoelectronic Workshop (iNOW 2008)
  • Place of Presentation: Tokyo/Saiko/Hayama (Japan)
  • Year and Date: 2008-08-11
• [Presentation] Long wavelength lasers with very fine structures and their applications to photonic integrated circuits (2008)
  • Author(s): S. Arai
  • Organizer: Int. Nano-Optoelectronic Workshop (iNOW 2008)
  • Place of Presentation: Tokyo/Saiko/Hayama (Japan)
  • Year and Date: 2008-08-11
• [Presentation] Injection Type GaInAsP/InP DFB Lasers (2008)
  • Author(s): H. Yonezawa
  • Organizer: Int. Nano-Optoelectronic Workshop (iNOW 2008)
  • Place of Presentation: Tokyo/Saiko/Hayama (Japan)
  • Year and Date: 2008-08-08
• [Presentation] A sub-mA Threshold Current Operation of Distributed-Reflector (DR) Laser (2008)
  • Author(s): T. Shindo
  • Organizer: Int. Nano-Optoelectronics Workshop (iNOW 2008)
  • Place of Presentation: Tokyo/Saiko/Hayama (Japan)
  • Year and Date: 2008-08-08
• [Presentation] Evaluation of Si Wire Waveguide Fabricated by Parallel Plate RIE Process using Double Layered EB Resist Containing C_<60> (2008)
  • Author(s): K. Inoue
  • Organizer: Int. Nano-Optoelectronic Workshop (iNOW 2008)
  • Place of Presentation: Tokyo/Saiko/Hayama (Japan)
  • Year and Date: 2008-08-07
• [Presentation] Comparison of Wafer Bonding Methods of Membrane GaInAsP Wired Waveguides on Si Substrate (2008)
  • Author(s): H. Enomoto
  • Organizer: Int. Nano-Optoelectronic Workshop (iNOW 2008)
  • Place of Presentation: Tokyo/Saiko/Hayama (Japan)
  • Year and Date: 2008-08-07
• [Presentation] CH_4/H_2-RIE Induced Optical Property Degradation in GaInAsP/InPOuantum-Well Structures (2008)
  • Author(s): M. Kurokawa
  • Organizer: Mt. Nano-Optoelectronics Workshop (iNOW 2008)
  • Place of Presentation: Tokyo/Saiko/Hayama (Japan)
  • Year and Date: 2008-08-07
• [Presentation] Sub-THz RTD Oscillators Integrated with Planar Horn Antennas for Horizontal Radiation (2008)
  • Author(s): K. Urayama
  • Organizer: International Nano-Optoelectronics Workshop
  • Place of Presentation: Saiko, Japan
  • Year and Date: 2008-08-07
• [Presentation] Measurement of Linewidth of RTD Oscillator Using InP Schottky Barrier Diode (2008)
  • Author(s): R. Yokoyama
  • Organizer: International Nano-Optoelectronics Workshop
  • Place of Presentation: Saiko, Japan
  • Year and Date: 2008-08-07
• [Presentation] Fabrication and Millimeter-Wave Characterization of Semiconductor Klystron Amplifier Device (2008)
  • Author(s): Y. Iwahashi
  • Organizer: International Nano-Optoelectronics Workshop
  • Place of Presentation: Saiko, Japan
  • Year and Date: 2008-08-07
• [Presentation] GaInAsP/InP Lateral Current Injection Laser Grown on SI-InP Substrate (2008)
  • Author(s): T. Okumura
  • Organizer: Int. Nano-Optoelectronics Workshop (iNOW 2008)
  • Place of Presentation: Tokyo/Saiko/Hayama (Japan)
  • Year and Date: 2008-08-05
• [Presentation] Coherent Power Combination in Multi-Element Sub-THz RTD Oscillators Coupled with MIM Stub Structure (2008)
  • Author(s): S. Suzuki
  • Organizer: International Nano-Optoelectronics Workshop
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2008-08-05
• [Presentation] Enhancement of Modulation Bandwidth in Distributed Reflector Lasers (2008)
  • Author(s): S. Lee
  • Organizer: Int. Nano-Optoelectronics Workshop (iNOW 2008)
  • Place of Presentation: Tokyo/Saiko/Hayama (Japan)
  • Year and Date: 2008-08-03
• [Presentation] Direct Modulation of Sub-Teraherz Waves by 1.55-μm Optical Signal (2008)
  • Author(s): M. Shirao
  • Organizer: Int. Nano-Optoelectronics Workshop (iNOW 2008)
  • Place of Presentation: Tokyo/Saiko/Hayama (Japan)
  • Year and Date: 2008-08-03
• [Presentation] Resonant Tunneling Diodes with Very High Peak Current Density Using Thin Barrier and High Emitter Doping (2008)
  • Author(s): A. Teranishi
  • Organizer: International Nano-Optoelectronics Workshop
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2008-08-03
• [Presentation] SOI基板への直接貼り付け法によるGaInAsP/InPDFBレーザ (2008)
  • Author(s): 奥村忠嗣
  • Organizer: 電子情報通信学会レーザ・量子エレクトロニクス研究会
  • Place of Presentation: 東京
  • Year and Date: 2008-06-27
• [Presentation] Resonant Tunneling Diodes with Very High Peak Current Density Using Thin Barrier and High Emitter Doping (2008)
  • Author(s): A. Teranishi
  • Organizer: Annual Device Research Conference
  • Place of Presentation: Santa Barbara/CA, USA
  • Year and Date: 2008-06-25
• [Presentation] Coherent Power Combination in Multi-Element Sub-THz RTD Oscillators Coupled with MIM Stub Structure (2008)
  • Author(s): S.Suzuki
  • Organizer: Int. Conf. Indium Phosphide and Related Compounds
  • Place of Presentation: Versailles, France
  • Year and Date: 2008-05-29
• [Presentation] RIE-Plasma Induced Optical Property Degradation in GaInAsP/InPOuantum-Well Structure (2008)
  • Author(s): M. Kurokawa
  • Organizer: The 20th Indium Phosphide and Related Material Conf. (IPRM 2008)
  • Place of Presentation: Versaille (France)
  • Year and Date: 2008-05-28
• [Presentation] Injection Type GaInAsP/InP/SiDFB Lasers Directly Bonded on SOI Substrate (2008)
  • Author(s): T. Okumura
  • Organizer: The 20th Indium Phosphide and Related Material Conf (IPRM 2008)
  • Place of Presentation: Versailles (France)
  • Year and Date: 2008-05-27
• [Presentation] Bit-Error-Rate Measurement of GalnAsP/InP Distributed Reflector Laser with Wirelike Active Regions (2008)
  • Author(s): S. Lee
  • Organizer: The 20th Indium Phosphide and Related Material Conf (IPRM 2008)
  • Place of Presentation: Versaille (France)
  • Year and Date: 2008-05-26
• [Presentation] Hot electron transistor controlled by insulated gate with 70nm-wideenfitter (2008)
  • Author(s): H. Saito
  • Organizer: IEEE 20th Conference on Indium Phosphide and Related Materials
  • Place of Presentation: Versailles - France
  • Year and Date: 2008-05-26
• [Presentation] Two Models for Electro-Magnetic Wave Amplifier by Utilizing Traveling Electron Beam (2008)
  • Author(s): M.Asada
  • Organizer: 電子情報通信学会レーザ量子エレクトロニクス研究会技術研究報告
  • Place of Presentation: 福井
  • Year and Date: 2008-05-23
• [Presentation] スタブ結合RTD平面アレイによるサブTHz発振器のコヒーレント出力合成 (2008)
  • Author(s): 鈴木左文
  • Organizer: 電子情報通信学会MWP・THz合同研究会伎術研究報告
  • Place of Presentation: 京都
  • Year and Date: 2008-05-19
• [Presentation] 直接貼付法によるSOI基板上注入形GaInAsP/InP DFBレーザ (2008)
  • Author(s): 奥村忠嗣
  • Organizer: 応用物理学会春季大会
  • Place of Presentation: 船橋
  • Year and Date: 2008-03-29
• [Presentation] C_<60>含有と非含有EBレジストZEPの重ね塗りによるSi導波路ドライエッチング形状の向上 (2008)
  • Author(s): 井上敬太
  • Organizer: 応用物理学会春季大会
  • Place of Presentation: 船橋
  • Year and Date: 2008-03-29
• [Presentation] ゲート制御ホットエレクトロントランジスタのバリスティックモデル解析 (2008)
  • Author(s): 山田朋宏
  • Organizer: 応用物理学会春季大会
  • Place of Presentation: 船橋
  • Year and Date: 2008-03-29
• [Presentation] 絶縁ゲート制御型ホットエレクトロントランジスタの電圧利得向上 (2008)
  • Author(s): 齋藤尚史
  • Organizer: 応用物理学会春季大会
  • Place of Presentation: 船橋
  • Year and Date: 2008-03-29
• [Presentation] 低温現象によるGaInAsP/InP量子細線構造の線幅ばらつきの低減 (2008)
  • Author(s): Dhanorm Plumwongrot
  • Organizer: 応用物理学会春季大会
  • Place of Presentation: 船橋
  • Year and Date: 2008-03-28
• [Presentation] GaInAsP/InP量子井戸構造のRIEプラズマによるPL強度劣化とアニールによる回復 (2008)
  • Author(s): 黒川宗高
  • Organizer: 応用物理学会春季大会
  • Place of Presentation: 船橋
  • Year and Date: 2008-03-28
• [Presentation] InPショットキーバリアダイオードを用いたサブTHzRTD発振素子の線幅測定 (2008)
  • Author(s): 横山亮
  • Organizer: 応用物理学会春季大会
  • Place of Presentation: 船橋
  • Year and Date: 2008-03-28
• [Presentation] ボウタイアンテナを集積したNi-InPショットキーバリアダイオードサブTHz-THz検出素子の作製と特性 (2008)
  • Author(s): 辰尾佳彦
  • Organizer: 応用物理学会春季大会
  • Place of Presentation: 船橋
  • Year and Date: 2008-03-28
• [Presentation] RTDサブテラヘルツ発振素子をMIMスタブ構造で結合した多素子アレイにおけるコヒーレントな出力合成 (2008)
  • Author(s): 鈴木左文
  • Organizer: 応用物理学会春季大会
  • Place of Presentation: 船橋
  • Year and Date: 2008-03-28
• [Presentation] 細線状活性層を有する分布反射型レーザの直接変調特性 (2008)
  • Author(s): 李承勲
  • Organizer: 電子情報通信学会総合大会
  • Place of Presentation: 北九州
  • Year and Date: 2008-03-20
• [Presentation] モンテカルロ計算によるゲート制御ホットエレクトロトランジスタの遮断周波数解析 (2008)
  • Author(s): 宮本恭幸
  • Organizer: Technical Meeting on Electron Devices, IEE Japan
  • Place of Presentation: 水上
  • Year and Date: 2008-03-06
• [Presentation] InP系バリスティックトランジスタ (2008)
  • Author(s): 宮本恭幸
  • Organizer: 電子情報通信学会ED研究会
  • Place of Presentation: 札幌
  • Year and Date: 2008-01-30
• [Presentation] 電子デバイスによるテラヘルツ光源 (2008)
  • Author(s): 浅田雅洋
  • Organizer: 電子情報通信学会シンポジウム
  • Place of Presentation: 東京
  • Year and Date: 2008-01-22
• [Presentation] Length dependencies of in-plane polarizations anisotropy in GaInAs/InP quantum-wire structures fabricated by dry etching and regrowth process (2008)
  • Author(s): D. Plumwongrot
  • Organizer: OPTO2008 (part of SPIE Photonics West 2008)
  • Place of Presentation: San Jose (USA)
  • Year and Date: 2008-01-21
• [Presentation] Reduction of RIE Induced Damage on Lasing Properties of GaInAsP/InP DQW Lasers Fabricated by 2-step Growths (2008)
  • Author(s): D. Plumwongrot
  • Organizer: OPTO2008 (part of SPIE Photonics West 2008)
  • Place of Presentation: San Jose (USA)
  • Year and Date: 2008-01-20
• [Presentation] GaInAsP/InP distributed feedback and distributed reflector lasers with fine wirelike active regions (Invited Paper) (2008)
  • Author(s): S. Arai
  • Organizer: OPTO2008 (part of SPIE Photonics West 2008)
  • Place of Presentation: San Jose (USA)
  • Year and Date: 2008-01-20
• [Presentation] 共鳴トンネルダイオード室温テラヘルツ発振器 (2008)
  • Author(s): 浅田雅洋
  • Organizer: Quantum Electronics Meeting of Jpn
  • Place of Presentation: 軽井沢
  • Year and Date: 2008-01-10
• [Presentation] Fabrication of GaInAsP/InP Arbitrary Shaped Low Dimensional Quantum Structures (2007)
  • Author(s): D. Plumwongrot
  • Organizer: The 20th International Microprocesses and Nanotechnology Conference (MNC2007)
  • Place of Presentation: Kyoto (Japan)
  • Year and Date: 2007-11-06
• [Presentation] Observation of RIE Induced Damage on Lasing Properties of GaInAsP/InP MQW Lasers Fabricated by 2-step Growths (2007)
  • Author(s): D. Plumwongrot
  • Organizer: The 34th International Symposium on Compound Semiconductors (ISCS2007)
  • Place of Presentation: Kyoto (Japan)
  • Year and Date: 2007-10-18
• [Presentation] DC Characterristics of Heterojunction Bipolar Tranistor with Buried SiO_2 Wire in Collector (2007)
  • Author(s): S. Takahashi
  • Organizer: Int. Symp. Compound Semiconductors
  • Place of Presentation: Kyoto
  • Year and Date: 2007-10-16
• [Presentation] Room-Temperature Resonant Tunneling Diode Oscillators at About 600GHz Using Offset-Feb Planar Slot Antennas (2007)
  • Author(s): S. Suzuki
  • Organizer: Int. Symp. Compound Semiconductors
  • Place of Presentation: Kyoto
  • Year and Date: 2007-10-16
• [Presentation] 共鳴トンネルダイオードを用いた室温テラヘルツ発振器 (2007)
  • Author(s): 浅田雅洋
  • Organizer: Terahertz Technology Forum
  • Place of Presentation: 厚木
  • Year and Date: 2007-10-12
• [Presentation] シリコン上レーザ実現への展望(招待講演) (2007)
  • Author(s): 丸山武男
  • Organizer: 電子情報通信学会ソサイエティ大会
  • Place of Presentation: 鳥取
  • Year and Date: 2007-09-10
• [Presentation] Wire-Length Dependence of Polarization Anisotropy in GaInAsP/InP Quantum-Wire Structures (2007)
  • Author(s): DHANORM PLUMWONGROT
  • Organizer: 応用物理学会秋季大会
  • Place of Presentation: 札幌
  • Year and Date: 2007-09-07
• [Presentation] 2段階OMVPE成長GaInAsP/InP量子井戸レーザにおけるRIEプラズマ損傷とその低減 (2007)
  • Author(s): 黒川宗高
  • Organizer: 応用物理学会秋季大会
  • Place of Presentation: 札幌
  • Year and Date: 2007-09-07
• [Presentation] 直接貼付法によるSOI基板上GaInAsP/InP-LED (2007)
  • Author(s): 奥村忠嗣
  • Organizer: 応用物理学会秋季大会
  • Place of Presentation: 札幌
  • Year and Date: 2007-09-07
• [Presentation] 面積縮小とオフセット給電スロットアンテナによる共鳴トンネルダイオードTHz発振素子の周波数上昇 (2007)
  • Author(s): 岸本直道
  • Organizer: 応用物理学会秋季大会
  • Place of Presentation: 札幌
  • Year and Date: 2007-09-07
• [Presentation] スロットアンテナを用いたRTD発振素子の高集積アレイにおけるコヒーレントな出力合成 (2007)
  • Author(s): 鈴木左文
  • Organizer: 応用物理学会秋季大会
  • Place of Presentation: 札幌
  • Year and Date: 2007-09-07
• [Presentation] 弾道電子放出顕微鏡を利用した電子波回折観測の可能性 (2007)
  • Author(s): 西村想
  • Organizer: 応用物理学会秋季大会
  • Place of Presentation: 札幌
  • Year and Date: 2007-09-05
• [Presentation] ホットエレクトロントランジスタにおけるゲート絶縁性の確認 (2007)
  • Author(s): 日高高宏
  • Organizer: 応用物理学会秋季大会
  • Place of Presentation: 札幌
  • Year and Date: 2007-09-04
• [Presentation] 先端ノンドープ構造ホットエレクトロンエミッタ充電時間解析 (2007)
  • Author(s): 山田朋宏
  • Organizer: 応用物理学会秋季大会
  • Place of Presentation: 札幌
  • Year and Date: 2007-09-04
• [Presentation] Coherent Power Combination in Highly Integrated Resonant Tunneling Diode oscillators with Slot Antenna (2007)
  • Author(s): S. Suzuki
  • Organizer: Int. Conf. Infrared and Millimeter Waves & Teraheriz Electronics (IRMMW-THz2007)
  • Place of Presentation: Cardiff, UK,
  • Year and Date: 2007-09-03
• [Presentation] Terahertz Oscillation of Resonant Tunneling Diodes at Room Temperature (2007)
  • Author(s): M. Asada
  • Organizer: Korea-Japan Joint Workshop on THz Technology
  • Place of Presentation: Seoul
  • Year and Date: 2007-08-25
• [Presentation] Fabricatoin of 200-nm-thick SiO2 wires buried in InP for reduction in collector capacitance in InP/InGaAs DHBT (2007)
  • Author(s): H. Yamashita
  • Organizer: Topical Workshop on Heterostructure Microelectronics (TWHM2007)
  • Place of Presentation: Kisarazu/Japan
  • Year and Date: 2007-08-24
• [Presentation] Fabrication and Millimeter-wave Characterization of Semiconductor Klystron Device Using Two-Dimensional Electron Gas (2007)
  • Author(s): J. Takeuchi
  • Organizer: Topical Workshop on Heterostructure Microelectronics
  • Place of Presentation: Kisarazu, Japan
  • Year and Date: 2007-08-23
• [Presentation] Frequency Increase of Resonant Tunneling Diode Oscillators in Sub-THz and THz Range Using a Thick Spacer Layer (2007)
  • Author(s): N. Kishimoto
  • Organizer: Topical Workshop on Heterostructure Microelectronics
  • Place of Presentation: Kisarazu, Japan
  • Year and Date: 2007-08-23
• [Presentation] An Analysis of Antenna Integrated THz Oscillator Using A Negative Differential Resistance Transistor (2007)
  • Author(s): K. Furuya
  • Organizer: Int. Symp. Antennas and Propagation (ISAP2007)
  • Place of Presentation: Niigata, Japan
  • Year and Date: 2007-08-21
• [Presentation] Sub-THz Amplifiers Using Velocity Modulated 2D Electrons in Heterostructures (2007)
  • Author(s): M. Asada
  • Organizer: Int. Conf. Nonequilibrium Carrier Cynamics in Semiconductors (HCIS15)
  • Place of Presentation: Tokyo
  • Year and Date: 2007-07-26
• [Presentation] Cutoff Frequency Characteristics of Insulated-gate Hot-electron Transistors (2007)
  • Author(s): M. Igarashi
  • Organizer: Int. Conf. Nonequilibrium Carrier Dynamics in Semiconductors (HCIS15)
  • Place of Presentation: Tokyo
  • Year and Date: 2007-07-23
• [Presentation] GaInAsP/InP Membrane DFB Lasers Directly Boded on SOI Substrate with Rib-waveguide structure (2007)
  • Author(s): T. Maruyama
  • Organizer: 12th OptoElectronics and Communications Conference/16th Intl Conference on Integrated Optics & Optical Fiber Communication (OECC/IOOC 2007)
  • Place of Presentation: Yokohama (Japan)
  • Year and Date: 2007-07-12
• [Presentation] Room-Temperature Resonant Tunneling Diode Oscillators at About 600GHz Using Offset-Fed Planar Slot Antennas (2007)
  • Author(s): S. Suzuki
  • Organizer: Joint Meeting of JSAP-THz and IEICE-THz
  • Place of Presentation: Okinawa
  • Year and Date: 2007-07-05
• [Presentation] エアブリッジ構造を用いたGaInAsP/InP半導体薄膜BH-DFBレーザ (2007)
  • Author(s): 内藤秀幸
  • Organizer: 電子情報通信学会LQE研究会
  • Place of Presentation: 東京
  • Year and Date: 2007-06-29
• [Presentation] Room-Temperature Terahertz Oscillators Using Resonant Tunneling Diodes (2007)
  • Author(s): M. Asada
  • Organizer: Annual Device Research Conf
  • Place of Presentation: Notre Dame
  • Year and Date: 2007-06-19
• [Presentation] コレクタ層内にSiO_2細線を埋め込んだHBTのDC特性 (2007)
  • Author(s): 高橋新之助
  • Organizer: 電子情報通信学会ED研究会
  • Place of Presentation: 富山
  • Year and Date: 2007-06-15
• [Book] テラヘルツ波新産業 (2011)
  • Author(s): 浅田雅洋
  • Total Pages: 280
  • Publisher: シーエムシー出版
• [Book] 電磁気学(電子情報工学ニューコース) (2009)
  • Author(s): 浅田雅洋・平野拓一
  • Total Pages: 276
  • Publisher: 培風館
• [Book] 「テラヘルツ技術総覧」第3章3. 5節 (2007)
  • Author(s): 浅田雅洋, 廣本宣久
  • Publisher: NGT
• [Remarks]
  • URL: http://www.pe.titech.ac.jp/AraiLab/index.html
• [Remarks]
  • URL: http://www.pe.titech.ac.jp/AsadaLab/Asada_Lab.html
• [Remarks]
  • URL: http://www.pe.titech.ac.jp/Furuya-MiyamotoLab/index.htm
• [Patent(Industrial Property Rights)] 活性層分離型位相シフトDFBレーザ (2011)
  • Inventor(s): 西山伸彦、荒井滋久, 他
  • Industrial Property Rights Holder: 東工大/NTT
  • Industrial Property Number: 2011-050062
  • Filing Date: 2011-03-08
• [Patent(Industrial Property Rights)] 光パワーモニタ集積DFBレーザ (2011)
  • Inventor(s): 西山伸彦, ほか
  • Industrial Property Rights Holder: 東工大、NTT
  • Industrial Property Number: 2011-050063
  • Filing Date: 2011-03-08
• [Patent(Industrial Property Rights)] 活性層分離型位相シフトDFBレーザ (2010)
  • Inventor(s): 西山伸彦, ほか
  • Industrial Property Rights Holder: 東工大、NTT
  • Industrial Property Number: 2011-050062
  • Filing Date: 2010-03-08
• [Patent(Industrial Property Rights)] 共鳴トンネルダイオードおよびテラヘルツ発振器 (2009)
  • Inventor(s): 杉山弘樹、横山春喜、浅田雅洋、鈴木左文
  • Industrial Property Rights Holder: 東工大/NTT
  • Industrial Property Number: 2009-268458
  • Filing Date: 2009-11-26
• [Patent(Industrial Property Rights)] 光集積素子 (2009)
  • Inventor(s): 西山伸彦、荒井滋久、李承勲、上岡裕之、大橋弘美、須郷満
  • Industrial Property Rights Holder: 東工大/NTT
  • Industrial Property Number: 2009-215167
  • Filing Date: 2009-09-17
• [Patent(Industrial Property Rights)] バイポーラトランジスタの製造方法 (2009)
  • Inventor(s): 山幡章司、栗島賢二、宮本恭幸、山下浩明
  • Industrial Property Rights Holder: NTT
  • Industrial Property Number: 2009-017616
  • Filing Date: 2009-01-29
• [Patent(Industrial Property Rights)] ホットエレクトロントランジスタ、及びその製造方法 (2009)
  • Inventor(s): 宮本恭幸、前田寛、竹内克彦
  • Industrial Property Rights Holder: 東京工業大学
  • Acquisition Date: 2009-08-08
• [Patent(Industrial Property Rights)] ホットエレクトロントランジスタ、及びその製造方法 (2009)
  • Inventor(s): 宮本恭幸, 前田寛, 竹内克彦
  • Filing Date: 2009-08-07
• [Patent(Industrial Property Rights)] 半導体レーザ (2009)
  • Inventor(s): 西山伸彦、荒井滋久、上岡裕之、大橋弘美、須郷満
  • Industrial Property Rights Holder: 東工大/NTT
  • Industrial Property Number: 2009-215168
  • Filing Date: 2009-09-17
• [Patent(Industrial Property Rights)] アバランシェフォトダイオード (2009)
  • Inventor(s): 飯山宏一、丸山武男、高松英輝
  • Industrial Property Rights Holder: 金沢大学
  • Industrial Property Number: 2009-164401
  • Filing Date: 2009-07-13
• [Patent(Industrial Property Rights)] ホットエレクトロントランジスタ、及びその製造方法 (2009)
  • Inventor(s): 宮本恭幸、前田寛、竹内克彦
  • Industrial Property Rights Holder: 東京工業大学
  • Filing Date: 2009-08-07
• [Patent(Industrial Property Rights)] レーザ素子 (2007)
  • Inventor(s): 浅田雅洋, 関口亮太, 尾内敏彦, 内田恒二
  • Industrial Property Number: 2007-331275
  • Filing Date: 2007-12-25