| Budget Amount *help |
¥102,830,000 (Direct Cost: ¥79,100,000、Indirect Cost: ¥23,730,000)
Fiscal Year 2011: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
Fiscal Year 2010: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2009: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2008: ¥36,660,000 (Direct Cost: ¥28,200,000、Indirect Cost: ¥8,460,000)
Fiscal Year 2007: ¥49,920,000 (Direct Cost: ¥38,400,000、Indirect Cost: ¥11,520,000)
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| Research Abstract |
The gate insulator thickness is required to be thinned for enhancing semiconductor device performances. This project has aimed at the thinning the insulator thickness electrically by increasing the dielectric constant of the films instead of thinning the physical thickness. Through this research, the energy barrier heights of the insulator films with regard to Si have been obtained systematically. In addition, the stability of dielectric constant, the dipoles formed at interfaces between such films and conventional insulator(SiO_2) have been deeply investigated and modeled in terms of atom kinetics in the bulk films and at the interfaces. Furthermore, hygroscopic properties of rare-earth metal oxides have been characterized thermodynamically and the defect generation origin in GeO_2 which will be a new insulator for new semiconductor(Ge) has been also experimentally clarified.
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