Development and application of totally low-temperature semiconductor process using atmospheric-pressure plasma

• Project/Area Number: 19206018
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Production engineering/Processing studies
• Research Institution: Osaka University
• Principal Investigator: YASUTAKE Kiyoshi Osaka University, 工学研究科, 教授 (80166503)
• Co-Investigator(Kenkyū-buntansha): KAKIUCHI Hiroaki 大阪大学, 大学院・工学研究科, 准教授 (10233660) ; OHMI Hiromasa 大阪大学, 大学院・工学研究科, 助教 (00335382)
• Project Period (FY): 2007 – 2009
• Project Status: Completed (Fiscal Year 2009)
• Budget Amount: ¥34,190,000 (Direct Cost: ¥26,300,000、Indirect Cost: ¥7,890,000); Fiscal Year 2009: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000); Fiscal Year 2008: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000); Fiscal Year 2007: ¥25,480,000 (Direct Cost: ¥19,600,000、Indirect Cost: ¥5,880,000)
• Keywords: 大気圧プラズマ / 半導体プロセス / エピタキシャル / 薄膜成長 / プラズマ酸化 / 機能材料 / シリコン / 大気圧プラズマCVD / 大気圧プラズマ酸化 / 大気圧プラズマ窒化 / 全低温プロセス / エピタキシャル成長 / ドーピング・エピ技術

Research Abstract

We have developed constituent technologies to realize a totally low-temperature semiconductor process by using atmospheric-pressure plasma ; namely in-situ doped Si epitaxial growth at 570℃ by atmospheric-pressure plasma CVD and SiO_2 film formation by atmospheric-pressure plasma oxidation at 400℃. From the electrical measurements, it has been revealed that the prepared Si and SiO_2 films have high qualities for device application.

Research Products

• [Journal Article] n situ doped Si selective epitaxial growth at low temperatures by atmospheric pressure plasma CVD (2009)
  • Author(s): T. Ohnishi, Y. Kirihata, H. Ohmi, H. Kakiuchi, K. Yasutake
  • Journal Title: ECS Trans. vol.25 Pages: 309-315
  • Peer Reviewed
• [Journal Article] In Situ Doped Si Selective Epitaxial Growth at Low Temperatures by Atmospheric Pressure Plasma CVD (2009)
  • Author(s): T.Ohnishi, Y.Kirihata, H.Ohmi, H.Kakiuchi, K.Yasutake
  • Journal Title: ECS Trans. 25 Pages: 309-315
  • Peer Reviewed
• [Journal Article] High-quality epitaxial Si growth at low temperatures by atmospheric pressure plasma CVD (2008)
  • Author(s): K. Yasutake, H. Ohmi, Y. Kirihata, H. Kakiuchi
  • Journal Title: Thin Solid Films vol.517 Pages: 242-244
  • Peer Reviewed
• [Journal Article] n situ B-doped Si epitaxial growth at low temperatures by atmospheric-pressure plasma CVD (2008)
  • Author(s): Y. Kirihata, T. Nomura, H. Ohmi, H. Kakiuchi, K. Yasutake
  • Journal Title: Surf. Interface Anal. vol.40 Pages: 984-987
  • Peer Reviewed
• [Journal Article] SiO_2 Formation by Oxidation of Crystalline and Hydrogenated Amorphous Si in Atmospheric Pressure Plasma Excited by Very High Frequency Power (2008)
  • Author(s): H. Kakiuchi, H. Ohmi, M. Harada, H. Watanabe, K. Yasutake
  • Journal Title: Jpn. J. Appl. Phys 47 Pages: 1884-1888
  • Peer Reviewed
• [Journal Article] In situ B-doped Si epitaxial growth at low temperatures by atmospheric-pressure plasma CVD (2008)
  • Author(s): Y. Kirihata, T. Nomura, H. Ohmi, H. Kakiuchi, K. Yasutake
  • Journal Title: Surf. Interface Anal 40 Pages: 984-987
  • Peer Reviewed
• [Journal Article] First-principles analysis of He and H atom incidence onto hydrogen-terminated Si(001) 2×1 surface (2008)
  • Author(s): K. Inagaki, K. Hirosea, K. Yasutake
  • Journal Title: Surf. Interface Anal 40 Pages: 1088-1091
  • Peer Reviewed
• [Journal Article] High-quality epitaxial Si growth at low temperatures by atmospheric pressure plasma CVD (2008)
  • Author(s): K. Yasutake, H. Ohmi, Y. Kirihata, H. Kakiuchi
  • Journal Title: Thin Solid Films 517 Pages: 242-244
  • Peer Reviewed
• [Journal Article] In situ B-doped Si epitaxial growth at low temperatures by atmospheric-pressure plasma CVD (2008)
  • Author(s): Y. Kirihata, T. Nomura, H. Ohmi, H. Kakiuchia and K. Yasutakea
  • Journal Title: Surf. Interface Anal. 40(in press)
  • Peer Reviewed
• [Journal Article] First-principles Analysis of Low-temperature Growth of Epitaxial Silicon Films by Atomospheric Pressure Plasma CVD - Surface Local Temperature - (2008)
  • Author(s): K. Inagaki, S. Kakeya, K. Hirose and K. Yasutake
  • Journal Title: Surf. Interface Anal. 40(in press)
  • Peer Reviewed
• [Journal Article] 大気圧プラズマCVD法によるSiの低温・高速エピタキシャル成長 (2007)
  • Author(s): 安武潔, 大参宏昌, 垣内弘章
  • Journal Title: 応用物理 vol.75 Pages: 1031-1036
  • NAID: 10019855405
  • Peer Reviewed
• [Journal Article] 大気圧プラズマCVD法によるSiの低温・高速エピタキシャル成長 (2007)
  • Author(s): 安武潔, 大参宏昌, 垣内弘章
  • Journal Title: 応用物理 75 Pages: 1031-1036
  • NAID: 10019855405
  • Peer Reviewed
• [Presentation] New Formation Process of Solar-Grade Si Material Based on Atmospheric-Pressure Plasma Science (2009)
  • Author(s): K.Yasutake, H.Ohmi, K.Inagaki, H.Kakiuchi
  • Organizer: 2nd Int. Symp. on Atomically Controlled Fabrication Technology
  • Place of Presentation: 大阪大学中之島会館(大阪市)
  • Year and Date: 2009-11-26
• [Presentation] First-Principles Molecular-Dynamics Simulation of Reaction in CVD Si Epitaxial Thin Film Growth Process -Hydrogen Coverage Dependence on Incident Radical Temperature- (2009)
  • Author(s): K.Inagaki, R.Kanai, H.Hirose, K.Yasutake
  • Organizer: 2nd Int. Symp. on Atomically Controlled Fabrication Technology
  • Place of Presentation: 大阪大学中之島会館(大阪市)
  • Year and Date: 2009-11-26
• [Presentation] Low-Temperature Si Epitaxial Growth by Atmospheric-Pressure Plasma CVD (2009)
  • Author(s): T.Ohnishi, K.Goto, H.Ohmi, H.Kakiuchi, K.Yasutake
  • Organizer: 2nd Int. Symp. on Atomically Controlled Fabrication Technology
  • Place of Presentation: 大阪大学中之島会館(大阪市)
  • Year and Date: 2009-11-26
• [Presentation] In Situ Doped Si Selective Epitaxial Growth at Low Temperatures by Atmospheric Pressure Plasma CVD (2009)
  • Author(s): T.Ohnishi, Y.Kirihata, H.Ohmi, H.Kakiuchi, K.Yasutake
  • Organizer: 216th ECS meeting CVD-XVII & EUROCVD-17
  • Place of Presentation: Austria Center Vienna(オーストリア、ウィーン)
  • Year and Date: 2009-10-05
• [Presentation] 大気圧プラズマCVDによる低温in situドープSi選択エピタキシャル成長に関する研究 (2009)
  • Author(s): 大西崇之, 後藤一磨, 大参宏昌, 垣内弘章, 安武潔
  • Organizer: 精密工学会 2009年度関西地方学術講演会
  • Place of Presentation: 千里ライフサイエンスセンター(豊中市)
  • Year and Date: 2009-05-13
• [Presentation] 大気圧プラズマCVD法によるSi薄膜成膜における高分解前駆体表面反応の理論解析 (2009)
  • Author(s): 金井良太, 稲垣耕司, 広瀬喜久治, 安武潔
  • Organizer: 精密工学会 2009年度関西地方学術講演会
  • Place of Presentation: 千里ライフサイエンスセンター(豊中市)
  • Year and Date: 2009-05-13
• [Presentation] (特別講演)低温・高速・高品質を実現する大気圧プラズマプロセスによる薄膜形成技術 (2009)
  • Author(s): 安武潔
  • Organizer: 精密工学会 2009年度関西地方学術講演会
  • Place of Presentation: 千里ライフサイエンスセンター(豊中市)
  • Year and Date: 2009-05-13
• [Presentation] 大気圧プラズマCVD法による高品質Si系薄膜の低温形成 (2009)
  • Author(s): 安武潔, 大参宏昌, 垣内弘章
  • Organizer: 第44回応用物理学会スクール「安価, 簡単, 便利～大気圧プラズマの基礎と応用～」
  • Place of Presentation: 筑波大学(筑波市)(招待講演)
  • Year and Date: 2009-04-02
• [Presentation] (招待講演)大気圧プラズマCVD法による高品質Si系薄膜の低温形成 (2009)
  • Author(s): 安武潔, 大参宏昌, 垣内弘章
  • Organizer: 2009年春季第56回応用物理学関係連合講演会第44回応用物理学会スクール「安価,簡単,便利～大気圧プラズマの基礎と応用～」
  • Place of Presentation: 筑波大学(筑波市)
  • Year and Date: 2009-04-02
• [Presentation] 大気圧プラズマCVD法によるSi選択エピタキシャル成長 (2009)
  • Author(s): 大西崇之, 桐畑豊, 大参宏昌, 垣内弘章, 安武潔
  • Organizer: 精密工学会春季大会学術講演会
  • Place of Presentation: 中央大学(東京)
  • Year and Date: 2009-03-11
• [Presentation] Atmospheric-Pressure Plasma Processes for Efficient Formation of Si Thin Films at Low Temperatures (2009)
  • Author(s): K. Yasutake, H. Ohmi, H. Kakiuchi
  • Organizer: 1^<st> Int. Symp. on Atomically Controlled Fabrication Technology -Surface and Thin Film Processing-
  • Place of Presentation: 大阪大学
  • Year and Date: 2009-02-16
• [Presentation] Si Selective Epitaxial Growth at Low Temperatures by Atmospheric-Pressure Plasma CVD (2009)
  • Author(s): Y. Kirihata, T. Ohnishi, H. Ohmi, H. Kakiuchi, K. Yasutake
  • Organizer: 1^<st> Int. Symp. on Atomically Controlled Fabrication Technology -Surface and Thin Film Processing-
  • Place of Presentation: 大阪大学
  • Year and Date: 2009-02-16
• [Presentation] First-Principles Molecular-Dynamics Analysis of Surface Reaction in Low-Temperature Si Thin Film Growth -Adsorption of Reactive Precursors onto H-Terminated Si Surface- (2009)
  • Author(s): K. Inagaki, R. Kanai, K. Hirose, K. Yasutake
  • Organizer: 1^<st> Int. Symp. 0n Atomically Controlled Fabrication Technology -Surface and Thin Film Processing-
  • Place of Presentation: 大阪大学
  • Year and Date: 2009-02-16
• [Presentation] 低速Hラジカル照射下におけるSi(001)2×1表面H被覆率の第一原理計算 (2009)
  • Author(s): 稲垣耕司、金井良太、広瀬喜久治、安武潔
  • Organizer: 日本物理学会2009年秋季大会
  • Place of Presentation: 熊本大学(熊本市)
• [Presentation] 大気圧プラズマプロセスによるSi系薄膜の低温形成 (2008)
  • Author(s): 安武潔, 大参宏昌, 垣内弘章
  • Organizer: 応用物理学会プラズマエレクトロニクス分科会 第2回プラズマ新領域研究会
  • Place of Presentation: 広島大学
  • Year and Date: 2008-12-19
• [Presentation] 大気圧プラズマCVD法による低温in situドープSi選択エピタキシャル成長 (2008)
  • Author(s): 桐畑豊, 大西崇之, 大参宏昌, 垣内弘章, 安武潔
  • Organizer: 2008年秋季第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学(愛知)
  • Year and Date: 2008-09-02
• [Presentation] 水素終端Si表面上でのSiエピタキシャル成長初期過程のミクロカノニカル第一原理分子 動力学計算による解析 (2008)
  • Author(s): 稲垣耕司, 広瀬喜久治, 安武潔
  • Organizer: 2008年秋季第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学(愛知)
  • Year and Date: 2008-09-02
• [Presentation] 水素終端Si(001)表面上でのSiH_3とHの作用によるエピタキシャル成長過程の第一原理分子動力学計算 (2008)
  • Author(s): 稲垣耕司, 田代崇, 広瀬喜久治, 安武潔
  • Organizer: 精密工学会 2008年度関西地方定期学術講演会
  • Place of Presentation: 堺市産業振興センター
  • Year and Date: 2008-07-29
• [Presentation] 大気圧プラズマCVD法による高品質Si系薄膜の形成 (2008)
  • Author(s): 安武潔, 垣内弘章, 大参宏昌
  • Organizer: 日本学術振興会プラズマ材料科学第153委員会第87回研究会
  • Place of Presentation: ホテル明山荘(蒲郡市)(招待講演)
  • Year and Date: 2008-07-02
• [Presentation] 大気圧プラズマCVD法による高品質Si系薄膜の形成 (2008)
  • Author(s): 安武潔, 垣内弘章, 大参宏昌
  • Organizer: 日本学術振興会プラズマ材料科学第153委員会第87回研究会
  • Place of Presentation: ホテル明山荘(愛知)
  • Year and Date: 2008-07-02
• [Presentation] Atmospheric-pressure plasma processes for fabrication of Si and SiO2 thin films at low-temperatures (2007)
  • Author(s): K. Yasutake, H. Ohmi, H. Kakiuchi
  • Organizer: 第18回日本MRS学術シンポジウム
  • Place of Presentation: 日本大学(千代田区)(招待講演)
  • Year and Date: 2007-12-08
• [Presentation] Atmospheric-Pressure Plasma Processes for Fabrication of Si and SiO_2 Thin Films at Low-Temperatures (Invited) (2007)
  • Author(s): 安武潔, 垣内弘章, 大参宏昌
  • Organizer: 第18回日本MRS学術シンポジウム
  • Place of Presentation: 日本大学(駿河台)
  • Year and Date: 2007-12-08
• [Presentation] First-principles Analysis of Low-temperature Growth of Epitaxial Silicon Films by Atomospheric Pressure Plasma CVD - Surface Local Temperature- (2007)
  • Author(s): K. Inagaki, S. Kakeya, K. Hirose and K. Yasutake
  • Organizer: Int. 21st Century COE Symp. on Atomistic Fabrication Technology 2007
  • Place of Presentation: 大阪大学(吹田)
  • Year and Date: 2007-10-17
• [Presentation] In situ B doped Si Epitaxial Growth at Low Temperatures by Atmospheric Pressure Plasma CVD (2007)
  • Author(s): Y. Kirihata, T. Nomura, H. Ohmi, H. Kakiuchi and K. Yasutake
  • Organizer: Int. 21st Century COE Symp. on Atomistic Fabrication Technology 2007
  • Place of Presentation: 大阪大学(吹田)
  • Year and Date: 2007-10-15
• [Presentation] 大気圧プラズマCVD法で低温成長したエピタキシャルSi薄膜の電気特性評価 (2007)
  • Author(s): 桐畑豊, 野村徹, 大参宏昌, 垣内弘章, 安武潔
  • Organizer: 2007年度精密工学会秋季大会学術講演会
  • Place of Presentation: 旭川市ときわ市民ホール
  • Year and Date: 2007-09-14
• [Presentation] 大気圧プラズマCVDによる高品質エピタキシャルSiの低温成長 (2007)
  • Author(s): 桐畑豊, 野村徹, 大参宏昌, 垣内弘章, 安武潔
  • Organizer: 精密工学会 2007年度関西地方定期学術講演会
  • Place of Presentation: 大阪産業大学(大東市)
  • Year and Date: 2007-08-09
• [Presentation] 大気圧プラズマCVDにおけるシリコンエピタクシャル成長低温化の第一原理シミュレーションによる解明-表面へのガス原子の作用- (2007)
  • Author(s): 稲垣耕司, 掛谷悟史, 広瀬喜久治, 安武潔
  • Organizer: 精密工学会 2007年度関西地方定期学術講演会
  • Place of Presentation: 大阪産業大学(大東市)
  • Year and Date: 2007-08-09
• [Presentation] High-quality epitaxial Si growth at low temperatures by atmospheric pressure plasma CVD (2007)
  • Author(s): K. Yasutake, H. Ohmi, Y. Kirihata, H. Kakiuchi
  • Organizer: 5th Int. Conf. on Silicon Epitaxy and Heterostructures
  • Place of Presentation: Marseille, France
  • Year and Date: 2007-05-21
• [Presentation] High-quality epitaxial Si growth at low temperatures by atmospheric pressure plasma CVD (2007)
  • Author(s): K. Yasutake, H. Ohmi, Y. Kirihata, H. Kakiuchi
  • Organizer: 5th Int. Conf. on Silicon Epitaxy and Heterostructures, 2007
  • Place of Presentation: マルセイユ
  • Year and Date: 2007-05-21
• [Presentation] Characterization of epitaxial Si films grown at low-temperatures by atmospheric pressure plasma CVD (2007)
  • Author(s): Y. Kirihata, N. Tawara, H. Ohmi, H. Kakiuchi, H. Watanabe, K. Yasutake
  • Organizer: 5th Int. Conf. on Silicon Epitaxy and Heterostructures, 2007
  • Place of Presentation: マルセイユ
  • Year and Date: 2007-05-21
• [Presentation] 大気圧プラズマCVD法による高品質Siエピタキシャル膜の低温成長 (2007)
  • Author(s): 桐畑豊, 田原直剛, 大参宏昌, 垣内弘章, 渡部平司, 安武潔
  • Organizer: 2007年春季 第54回応用物理学関係連合講演会
  • Place of Presentation: 青山学院大学(相模原)
  • Year and Date: 2007-03-29
• [Book] 大気圧プラズマ基礎と応用(日本学術振興会プラズマ材料科学第153委員会編) (2009)
  • Author(s): 安武潔, 垣内弘章, 大参宏昌, 他
  • Publisher: オーム社
• [Book] 「大気圧プラズマ基礎と応用」第6章,6.7.3(2),シリコン系CVD (2009)
  • Author(s): 安武潔, 垣内弘章, 大参宏昌
  • Total Pages: 5
  • Publisher: オーム社
• [Book] 新コーティングのすべて」第2章,2.2(1),大気圧プラズマCVD法-フィルムコーティングのための大気圧・超高周波プラズマ技術- (2009)
  • Author(s): 垣内弘章, 大参宏昌, 安武潔
  • Total Pages: 5
  • Publisher: 加工技術研究会
• [Book] NY, Trends in Thin Solid Films Research (ed. A. R. Jost), High-rate and low-temperature film growth technology using stable glow plasma at atmospheric pressure (2007)
  • Author(s): H. Kakiuchi, H. Ohmi, K. Yasutake, et. al.
  • Publisher: Nova Science
• [Book] "High-Rate and Low-Temperature Film Growth Technology Using Stable Glow Plasma at Atmospheric Pressure"in Trends in Thin Solid Films Research(ed. A. R. Jost) (2007)
  • Author(s): H. Kakiuchi, H. Ohmi, K. Yasutake
  • Total Pages: 50
  • Publisher: Nova Science, New York
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