Development and application of totally low-temperature semiconductor process using atmospheric-pressure plasma
| Project/Area Number |
19206018
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Production engineering/Processing studies
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| Research Institution | Osaka University |
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Principal Investigator |
YASUTAKE Kiyoshi Osaka University, 工学研究科, 教授 (80166503)
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| Co-Investigator(Kenkyū-buntansha) |
KAKIUCHI Hiroaki 大阪大学, 大学院・工学研究科, 准教授 (10233660)
OHMI Hiromasa 大阪大学, 大学院・工学研究科, 助教 (00335382)
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| Project Period (FY) |
2007 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥34,190,000 (Direct Cost: ¥26,300,000、Indirect Cost: ¥7,890,000)
Fiscal Year 2009: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2008: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2007: ¥25,480,000 (Direct Cost: ¥19,600,000、Indirect Cost: ¥5,880,000)
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| Keywords | 大気圧プラズマ / 半導体プロセス / エピタキシャル / 薄膜成長 / プラズマ酸化 / 機能材料 / シリコン / 大気圧プラズマCVD / 大気圧プラズマ酸化 / 大気圧プラズマ窒化 / 全低温プロセス / エピタキシャル成長 / ドーピング・エピ技術 |
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| Research Abstract |
We have developed constituent technologies to realize a totally low-temperature semiconductor process by using atmospheric-pressure plasma ; namely in-situ doped Si epitaxial growth at 570℃ by atmospheric-pressure plasma CVD and SiO_2 film formation by atmospheric-pressure plasma oxidation at 400℃. From the electrical measurements, it has been revealed that the prepared Si and SiO_2 films have high qualities for device application.
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Report
(4 results)
Research Products
(52 results)
