Research on vertical InP-related hot electron transistors with insulated gate

• Project/Area Number: 19206038
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: MIYAMOTO Yasuyuki Tokyo Institute of Technology, 大学院・理工学研究科, 准教授 (40209953)
• Project Period (FY): 2007 – 2009
• Project Status: Completed (Fiscal Year 2009)
• Budget Amount: ¥40,950,000 (Direct Cost: ¥31,500,000、Indirect Cost: ¥9,450,000); Fiscal Year 2009: ¥7,800,000 (Direct Cost: ¥6,000,000、Indirect Cost: ¥1,800,000); Fiscal Year 2008: ¥9,750,000 (Direct Cost: ¥7,500,000、Indirect Cost: ¥2,250,000); Fiscal Year 2007: ¥23,400,000 (Direct Cost: ¥18,000,000、Indirect Cost: ¥5,400,000)
• Keywords: ホットエレクトロン / 電子ランチャー / InP / InGaAs / 電子ビーム露光 / III-V MOS / バリスティック電子 / モンテカルロシミュレーション / 縦型電子デバイス / ヘテロランチャー / 絶縁ゲート

Research Abstract

High current density (6MA/cm^2) that was important for high speed operation was achieved by using a 15-nm-wide source that was narrowest in compound semiconductor vertical transistors. Moreover, the current drivability without dependence of channel length was confirmed and suggested that electron transportation in the channel was ballistic. High-k dielectric for high drivability and regrown source for extension of the scheme in lateral device were also studied.

Research Products

• [Journal Article] Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector (2010)
  • Author(s): Y. Miyamoto, S. Takahashi, T. Kobayashi, H. Suzuzki, K. Furuya
  • Journal Title: IEICE TRANSACTIONS on Electronics vol.E-93C Pages: 644-647
  • NAID: 10026825631
  • Peer Reviewed
• [Journal Article] Monte Carlo Analysis of Base Transit Times of InP/GaInAs Heterojunction Bipolar Transistors with Ultra thin Graded Bases (2010)
  • Author(s): T. Uesawa, M. Yamada, Y. Miyamoto, K. Furuya
  • Journal Title: Jpn. J. Appl. Phys vol.49 Pages: 24302-24302
  • NAID: 40016982521
  • Peer Reviewed
• [Journal Article] Monte Carlo Analysis of Base Transi Times of InP/GaInAs Heterojunction Bipolar Transistors with Ultrathin Graded Bases (2010)
  • Author(s): T.Uesawa, M.Yamada, Y.Miyamoto, K.Furuya
  • Journal Title: Jpn.J.Appl.Phys. vol.49
  • Peer Reviewed
• [Journal Article] Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector (2010)
  • Author(s): Y.Miyamoto, S.Takahashi, T.Kobayashi, H.Suzuzki, K.Furuya
  • Journal Title: IEICE TRANSACTIONS on Electronics vol.E-93C(5月掲載決定)
  • NAID: 10026825631
  • Peer Reviewed
• [Journal Article] Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance, High Voltage Gain (2009)
  • Author(s): H. Saito, Y. Miyamoto, K. Furuya
  • Journal Title: Applied Physics Express 巻2 Pages: 3451-3451
  • NAID: 10025085180
  • Peer Reviewed
• [Journal Article] Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain (2009)
  • Author(s): H. Saito, Y. Miyamoto, K. Furuya
  • Journal Title: Applied Physics Express 2 Pages: 34501-34501
  • NAID: 10025085180
  • Peer Reviewed
• [Journal Article] Cutoff Frequency Characteristics of Gate-Control Hot Electron Transistors by Monte Carlo Simulation (2008)
  • Author(s): M. Igarashi, K. Furuya, Y. Miyamoto
  • Journal Title: Physica Statu s Solidi(C) 巻5 Pages: 70-73
  • Peer Reviewed
• [Journal Article] Cutoff Frequency Characteristics of Gate-Control Hot Electron Transistors by Monte Carlo Simulation (2008)
  • Author(s): M. Igarashi, K. Furuya, and Y. Miyamoto
  • Journal Title: Physicsa Status Solidi(C) 5 Pages: 70-73
  • Peer Reviewed
• [Journal Article] InP/InGaAs hot electron transistors with insulated gate (2007)
  • Author(s): A. Suwa, T. Hasegawa, T. Hino, H. Sa ito, M. Oono, Y. Miyamoto, K. Furuya
  • Journal Title: Jpn. J. Appl. Phys 巻46
  • NAID: 210000064020
  • Peer Reviewed
• [Journal Article] InP/InGaAs hot electron transistors with insulated gate (2007)
  • Author(s): A. Suwa, T. Hasegawa, T. Hino, H. Saito, M. Oono, Y. Miyamoto, and K. Furuya
  • Journal Title: Jpn. J. Appl Phys., 46
  • NAID: 210000064020
  • Peer Reviewed
• [Presentation] Submicron InP/InGaAs composite channel MOSFETs with selectively regrown n+-source/drain buried into channel undercut (2010)
  • Author(s): T. Kanazawa, K. Wakabayashi, H. Saito, R. Terao, T. Tajima, S. Ikeda, Y. Miyamoto, K. Furuya
  • Organizer: 22nd Int. Conf. Indium Phosphide and Related Materials (IPRM20 10)
  • Place of Presentation: 香川県高松市
  • Year and Date: 2010-06-02
• [Presentation] Selective undercut etching for ultra narrow mesa structure in vertical InGaA s channel MISFET (2010)
  • Author(s): H. Saito, Y. Miyamoto, K. Furuya
  • Organizer: 22nd Int. Conf. Indium Phosphide and Related Materials (IPRM20 10)
  • Place of Presentation: 香川県高松市
  • Year and Date: 2010-06-02
• [Presentation] III-V族サブミクロンチャネルを有する高移動度MOSFET (2010)
  • Author(s): 金澤徹
  • Organizer: 電気学会電子デバイス研究会
  • Place of Presentation: 東京
  • Year and Date: 2010-03-26
• [Presentation] 再成長ソースを有するサブミクロンInP/InGaAs nMOSFETの電流電圧特性 (2010)
  • Author(s): 若林和也
  • Organizer: 第56回応用物理学会関係連合講演会
  • Place of Presentation: 平塚市
  • Year and Date: 2010-03-19
• [Presentation] 再成長ソースを有するサブミクロンInP/InGaAs nMOSFETの電流電圧特性 (2010)
  • Author(s): 寺尾良輔
  • Organizer: 第57回応用物理学会関係連合講演会
  • Place of Presentation: 平塚市
  • Year and Date: 2010-03-19
• [Presentation] Si基板上へ転写したInP系HBTの動作 (2010)
  • Author(s): 磯谷優治
  • Organizer: 第57回応用物理学会関係連合講演会
  • Place of Presentation: 平塚市
  • Year and Date: 2010-03-19
• [Presentation] 縦型InGaAsチャネルMISFETの極微細メサに向けた選択的ウェットエッチング (2010)
  • Author(s): 齊藤尚史
  • Organizer: 第57回応用物理学会関係連合講演会
  • Place of Presentation: 平塚市
  • Year and Date: 2010-03-19
• [Presentation] SiO_2細線埋め込みInP/InGaAs DHBTの作製 (2010)
  • Author(s): 小林嵩
  • Organizer: 第57回応用物理学会関係連合講演会
  • Place of Presentation: 平塚市
  • Year and Date: 2010-03-19
• [Presentation] Selective undercut etching for ultra narrow mesa structure in vertical InGaAs channel MISFET (2010)
  • Author(s): H.Saito
  • Organizer: Global COE International Symposium
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-03-10
• [Presentation] テラヘルツ帯におけるトランジスタ (2010)
  • Author(s): 宮本恭幸
  • Organizer: 応用電子物性分科会研究例会
  • Place of Presentation: 東京
  • Year and Date: 2010-01-29
• [Presentation] テラヘルツ帯におけるトランジスタ(招待講演) (2010)
  • Author(s): 宮本恭幸
  • Organizer: 応用電子物性分科会研究例会
  • Place of Presentation: 東京
  • Year and Date: 2010-01-29
• [Presentation] A12O3ゲート絶縁膜を用いたInP/InGaAsコンポジットチャネルMOSFET (2010)
  • Author(s): 金澤徹
  • Organizer: 電子情報通信学会電子デバイス研究会
  • Place of Presentation: 東京
  • Year and Date: 2010-01-14
• [Presentation] HBTにおける高電流密度動作時エミッタ充電時間の電流反比例特性からの逸脱 (2010)
  • Author(s): 山田真之
  • Organizer: 電子情報通信学会電子デバイス研究会
  • Place of Presentation: 東京
  • Year and Date: 2010-01-14
• [Presentation] Vertical InGaAs FET with hetero-launcher and undoped channel (2009)
  • Author(s): Y.Miyamoto
  • Organizer: International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)
  • Place of Presentation: Maui, HI, USA
  • Year and Date: 2009-12-02
• [Presentation] InGaAs/InP MISFET (Invited) (2009)
  • Author(s): Y. Miyamoto
  • Organizer: Int. Symposium on Silicon Nano Devices in 2030
  • Place of Presentation: 東京
  • Year and Date: 2009-10-14
• [Presentation] InGaAs/InP MISFET (Invited) (2009)
  • Author(s): Y.Miyamoto
  • Organizer: Int.Symposium on Silicon Nano Devices in 2030
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2009-10-14
• [Presentation] Fabrication of InP/InGaAs Undoped Channel MOSFET with Selectivel y Regrown N+-InGaAs Source Region (2009)
  • Author(s): T. Kanazawa
  • Organizer: 2009 Int. Conf. Solid State Devices and Materi als (SSDM 2009)
  • Place of Presentation: 宮城県仙台市
  • Year and Date: 2009-10-07
• [Presentation] Fabrication of InP/InGaAs Undoped Channel MOSFET with Selectively Regrown N+-InGaAs Source Region (2009)
  • Author(s): T.Kanazawa
  • Organizer: 2009 Int.Conf. Solid State Devices and Materials (SSDM 2009)
  • Place of Presentation: Miyagi, Japan
  • Year and Date: 2009-10-07
• [Presentation] Lateral Buried Growth of N+-InGaAs Source/Drain Region to Undercut InGaAs Channel Structure for High Drive Current N-type MOSFET (2009)
  • Author(s): T. Kanazawa, H. Saito, K. Wakabayashi, Y. Miyamoto, K. Furuya
  • Organizer: 2008 International Conference on Solid State Devices and Materials (SSDM2008)
  • Place of Presentation: つくば市
  • Year and Date: 2009-09-24
• [Presentation] SiO_2細線埋込InP系HBTにおけるCBr_4を使つたin-situエッチング (2009)
  • Author(s): 武部直明
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山市
  • Year and Date: 2009-09-10
• [Presentation] 縦型InGaAs-MISFETの試作 (2009)
  • Author(s): 楠崎智樹
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山市
  • Year and Date: 2009-09-08
• [Presentation] ヘテロランチャと真性チャネルを有する縦型InGaAs-MISFETの高駆動能力動作 (2009)
  • Author(s): 齊藤尚史
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山市
  • Year and Date: 2009-09-08
• [Presentation] 再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性 (2009)
  • Author(s): 若林和也
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山市
  • Year and Date: 2009-09-08
• [Presentation] HBTにおける超高速動作時エミッタ充電時間の理論的解析 (2009)
  • Author(s): 山田真之
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山市
  • Year and Date: 2009-09-08
• [Presentation] MOVPE再成長n^+-ソースを有するIII-V族高移動度チャネルMOSFET (2009)
  • Author(s): 金澤徹
  • Organizer: 電気学会C部門大会
  • Place of Presentation: 徳島市
  • Year and Date: 2009-09-04
• [Presentation] In-situ Etching in MOCPE for Thin Collector of InP HBT with Buried SiO_2 Wire (2009)
  • Author(s): Y.Miyamoto
  • Organizer: Topical Workshop on Heterostructure Materials (TWHM 2009)
  • Place of Presentation: Nagano, Japan
  • Year and Date: 2009-08-26
• [Presentation] Monte Carlo Analysis of Base Transit Times of InP/Gaines Heterojunction Bipolar Transistors with Ultrathin Bases (2009)
  • Author(s): T.Uesawa
  • Organizer: Topical Workshop on Heterostructure Materials (TWHM 2009)
  • Place of Presentation: Nagano, Japan
  • Year and Date: 2009-08-26
• [Presentation] InGaAs/InP MISFET with ep itaxially grown source (Invited) (2009)
  • Author(s): Y. Miyamoto
  • Organizer: 2009 A sia-Pacific Workshop on Fundamentals an d Applications of Advanced Semiconducto r Devices (AWAD)
  • Place of Presentation: Busan, Korea
  • Year and Date: 2009-06-25
• [Presentation] InGaAs/InP MISFET with epitaxially grown source (Invited) (2009)
  • Author(s): Y.Miyamoto
  • Organizer: 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)
  • Place of Presentation: Busan, Korea,
  • Year and Date: 2009-06-25
• [Presentation] Evaluation of collector current spreading of InGaAs SHBT with 75-nm-thick collector (2009)
  • Author(s): Y.Miyamoto
  • Organizer: 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD),
  • Place of Presentation: Busan, Korea,
  • Year and Date: 2009-06-25
• [Presentation] SiO2細線埋込InP系HBTにおけるCBr4を使つたIn-situエッチング (2009)
  • Author(s): 武部直明
  • Organizer: 電子情報通信学会電子デバイス研究会
  • Place of Presentation: 東京
  • Year and Date: 2009-06-12
• [Presentation] InP/InGaAs-channel MOSFET with MOVPE Selective Regrown Source (2009)
  • Author(s): T. Kanazawa
  • Organizer: 21 st Int. Conf. Indium Phosphide and Rela ted Materials (IPRM2009)
  • Place of Presentation: Newport Beach, USA
  • Year and Date: 2009-05-13
• [Presentation] Vertical InGaAs MOSFET with Hetero-Launcher and Undoped Channe (2009)
  • Author(s): H. Saito
  • Organizer: 21st Int. Conf. Indium Phosphide and Related Materials (IPRM2009)
  • Place of Presentation: Newport Beach, USA
  • Year and Date: 2009-05-13
• [Presentation] Vertical InGaAs MOSFET with Hetero-Launcher and Undoped Channel (2009)
  • Author(s): H.Saito
  • Organizer: The 21st Int. Conf.Indium Phosphide and Related Materials (IPRM2009)
  • Place of Presentation: Newport Beach, USA
  • Year and Date: 2009-05-13
• [Presentation] InP/InGaAs-channel MOSFET with MOVPE Selective Regrown Source (2009)
  • Author(s): T.Kanazawa
  • Organizer: The 21st Int. Conf.Indium Phosphide and Related Materials (IPRM2009)
  • Place of Presentation: Newport Beach, USA
  • Year and Date: 2009-05-13
• [Presentation] ヘテロランチャと真性チャネルを有する縦型InGaAs-MOSFET (2009)
  • Author(s): 齋藤 尚史, 楠崎智樹, 松本 豊, 宮本 恭幸, 古屋 一仁
  • Organizer: 第56回応用物理学会関係連合講演会
  • Place of Presentation: つくば市
  • Year and Date: 2009-03-31
• [Presentation] III-Vナノデバイス (2009)
  • Author(s): 宮本恭幸, 金澤 徹
  • Organizer: 電子情報通信学会2009年全国大会
  • Place of Presentation: 松山市
  • Year and Date: 2009-03-18
• [Presentation] ヘテロランチャと真性チャネルを有する縦型InGaAs-MOSFETの作製 (2009)
  • Author(s): 齋藤 尚史, 金澤 徹, 宮本 恭幸, 古屋 一仁
  • Organizer: 電気学会電子デバイス研究会
  • Place of Presentation: 静岡県熱海市
  • Year and Date: 2009-03-09
• [Presentation] InGaAs MISFET with hetero-laucher (Invited) (2009)
  • Author(s): Y. Miyamoto
  • Organizer: 2009 RCIQE International Seminar on "Advanced Semiconductor Materials and Devices"
  • Place of Presentation: 北海道札幌市
  • Year and Date: 2009-03-03
• [Presentation] InGaAs MISFET with hetero-laucher (Invited) (2009)
  • Author(s): Y. Miyamoto
  • Organizer: 2009 RCIQE International Seminar on "Advaneed Semiconductor Materials and Devices"
  • Place of Presentation: 札幌市
  • Year and Date: 2009-03-03
• [Presentation] Fabrication of vertical InGaAs channel MISFET with heterostructure launcher and undoped channel (2009)
  • Author(s): H.Saito
  • Organizer: Int.Symposium on Silicon Nano Devices in 2030
  • Place of Presentation: Tokyo, Japan
• [Presentation] InP/In_<0.53>Ga_<0.47>As composite channel n-MOSFET with heavily dopedregrown source/drain struture (2009)
  • Author(s): K.Wakabayashi
  • Organizer: Int.Symposium on Silicon Nano Devices in 2030
  • Place of Presentation: Tokyo, Japan
• [Presentation] RF Characteristics of Schottky-Gate-Controlled Hot Electron Transistor (2008)
  • Author(s): Y. Miyamoto, T. Hasegawa, H. Saito, K. Furuya
  • Organizer: IEEE Nanotechnology Materials and Devices Conference 2008
  • Place of Presentation: 京都市
  • Year and Date: 2008-10-22
• [Presentation] Lateral Buried Growth of N+-InGaAs Source/Drain Region to Undercut InGaAs Channel Structure for High Drive Current N-type MOSFET (2008)
  • Author(s): T. Kanazawa, H. Saito, K. Wakabayashi, Y. Miyamoto, K. Furuya
  • Organizer: 2008 Int. Conf. Solid State Devices and Materials (SSDM2008)
  • Place of Presentation: 茨城県つくば市
  • Year and Date: 2008-09-24
• [Presentation] 絶縁ゲート制御型ホットエレクトロントランジスタのゲート制御能力向上 (2008)
  • Author(s): 齋藤 尚史, 孟 伶我, 宮本 恭幸, 古屋 一仁
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県春日井市
  • Year and Date: 2008-09-04
• [Presentation] Hot electron transistor controlled by insulated gate with 70nm-wide emitter (2008)
  • Author(s): H. Saito, T. Hino, Y. Miyamoto, K. Furuya
  • Organizer: 20th Int. Conf. Indium Phosphide and Related Materials (IPRM2008)
  • Place of Presentation: Versailles, France
  • Year and Date: 2008-05-26
• [Presentation] Hot electron transistor controlled by insulated gate with 70nm-wide emitter (2008)
  • Author(s): H. Saito, T. Hino, Y. Miyamoto, K. Furuya
  • Organizer: IEEE 20th Conference on Indium Phosphide and Related Materials
  • Place of Presentation: Versailles - France
  • Year and Date: 2008-05-26
• [Presentation] 絶縁ゲート制御型ホットエレクトロントランジスタの電圧利得向上 (2008)
  • Author(s): 齋藤尚史、孟伶我、宮本恭幸、古屋一仁
  • Organizer: 第55回応用物理学関係連合講演会
  • Place of Presentation: 千葉県船橋市
  • Year and Date: 2008-03-29
• [Presentation] ゲート制御ホットエレクトロントランジスタのバリスティックモデル解析 (2008)
  • Author(s): 上澤岳史、山田朋宏、古屋一仁、宮本恭幸
  • Organizer: 第55回応用物理学関係連合講演会
  • Place of Presentation: 千葉県船橋市
  • Year and Date: 2008-03-29
• [Presentation] モンテカルロ計算によるゲート制御ホットエレクトロントランジスタの遮断周波数解析 (2008)
  • Author(s): 宮本恭幸、五十嵐満彦、山田朋宏、上澤岳史、古屋一仁
  • Organizer: 電気学会電子デバイス研究会
  • Place of Presentation: 群馬県みなかみ町
  • Year and Date: 2008-03-06
• [Presentation] InP系バリスティックトランジスタ (2008)
  • Author(s): 宮本恭幸、古屋一仁
  • Organizer: 電子情報通信学会電子デバイス研究会
  • Place of Presentation: 北海道札幌市
  • Year and Date: 2008-01-30
• [Presentation] InP系バリスティックトランジスタ(招待講演) (2008)
  • Author(s): 宮本恭幸、古屋一仁
  • Organizer: 電子情報通信学会 電子デバイス研究会
  • Place of Presentation: 北海道札幌市
  • Year and Date: 2008-01-30
• [Presentation] ホットエレクトロントランジスタにおけるゲート絶縁性の確認 (2007)
  • Author(s): 日野高宏, 齋藤尚史, 宮本恭幸,古屋一仁
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道札幌市
  • Year and Date: 2007-09-04
• [Presentation] 先端ノンドープ構造ホットエレクトロンエミッタ充電時間解析 (2007)
  • Author(s): 山田朋宏, 古屋一仁, 宮本恭幸
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道札幌市
  • Year and Date: 2007-09-04
• [Presentation] Cutoff Frequency Characteristics of Insulated-gate Hot-electron Transistors by Monte Carlo Simulation (2007)
  • Author(s): M. Igarashi, N. Machida, Y. Miyamoto, and K. Furuya
  • Organizer: 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors
  • Place of Presentation: 東京都文京区
  • Year and Date: 2007-07-23
• [Presentation] Fabrication of hot electron transistors controlled by insulated gate (2007)
  • Author(s): T. Hino, A. Suwa, T. Hasegawa, H. Saito, M. Oono, Y. Miyamoto, K. Furuya
  • Organizer: 19th Int. Conf. Indium Phosphide and Related Materials (IPRM2007)
  • Place of Presentation: 島根県松江市
  • Year and Date: 2007-05-15
• [Presentation] Fabrication of hot electron transistors controlled by insulated gate (2007)
  • Author(s): T. Hino, A. Suwa, T. Hasegawa, H. Saito, M. Oono, Y. Miyamoto, K. Furuya
  • Organizer: 19th International Conference on Indium Phosphide and Related Materials (IPRM'07)
  • Place of Presentation: 島根県松江市
  • Year and Date: 2007-05-15
• [Book] 電子デバイス (2009)
  • Author(s): 宮本恭幸
  • Total Pages: 153
  • Publisher: 培風館
• [Remarks] ホームページ等
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  • URL: http://www.pe.titech.ac.jp/Furuya-MiyamotoLab/index.htm
• [Patent(Industrial Property Rights)] 半導体装置の製造方法
  • Inventor(s): 井田実、山幡章司、齋藤尚史、宮本恭幸
  • Industrial Property Rights Holder: 日本電信電話、東京工業大学
  • Industrial Property Number: 2010-100797
• [Patent(Industrial Property Rights)] ホットエレクトロントランジスタ、及びその製造方法
  • Inventor(s): 宮本恭幸、前田寛、竹内克彦
  • Industrial Property Rights Holder: 東京工業大学