| Budget Amount *help |
¥47,320,000 (Direct Cost: ¥36,400,000、Indirect Cost: ¥10,920,000)
Fiscal Year 2010: ¥7,150,000 (Direct Cost: ¥5,500,000、Indirect Cost: ¥1,650,000)
Fiscal Year 2009: ¥9,490,000 (Direct Cost: ¥7,300,000、Indirect Cost: ¥2,190,000)
Fiscal Year 2008: ¥14,300,000 (Direct Cost: ¥11,000,000、Indirect Cost: ¥3,300,000)
Fiscal Year 2007: ¥16,380,000 (Direct Cost: ¥12,600,000、Indirect Cost: ¥3,780,000)
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| Research Abstract |
In this research, we investigated flexible nonvolatile memories utilizing organic FETs with pentacene as a semiconductor and P(VDF/TrFE) as a gate ferroelectric. In order to realize organic ferroelectric gate FETs, fabrication processes such as contact formation by dry etching and P(VDF/TrFE) thin film formations on the pentacene thin films were examined. By using the optimized process conditions, top-gate type organic FETs with P(VDF/TrFE) gate insulator were successfully fabricated on glass and flexible substrates with ferroelectric memory characteristics.
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