Group IV Semiconductor Quantum Device Fabrication for Room Temperature Operation

• Project/Area Number: 19360002
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Tohoku University
• Principal Investigator: SAKURABA Masao Tohoku University, 電気通信研究所, 准教授 (30271993)
• Co-Investigator(Kenkyū-buntansha): MUROTA Junichi 東北大学, 電気通信研究所, 教授 (70182144)
• Project Period (FY): 2007 – 2009
• Project Status: Completed (Fiscal Year 2009)
• Budget Amount: ¥18,460,000 (Direct Cost: ¥14,200,000、Indirect Cost: ¥4,260,000); Fiscal Year 2009: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000); Fiscal Year 2008: ¥6,110,000 (Direct Cost: ¥4,700,000、Indirect Cost: ¥1,410,000); Fiscal Year 2007: ¥6,110,000 (Direct Cost: ¥4,700,000、Indirect Cost: ¥1,410,000)
• Keywords: ヘテロ構造 / IV族半導体 / 量子デバイス / 室温動作 / エピタキシャル成長

Research Abstract

Low-temperature SiH_4 exposure or high Si growth rate by use of Si_2H_6 gas for Si cap layer formation on Si_<1-x>Ge_x effectively suppress interface roughness in high-Ge-fraction Si/Si_<1-x>Ge_x heterostructures. By utilizing the method into resonant tunneling diode fabrication process, negative differential conductance characteristics at room temperature is demonstrated.

Research Products

• [Journal Article] Improvement in Negative Differential Conductance Characteristics of Hole Resonant-Tunneling Diodes with High Ge Fraction Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure (2009)
  • Author(s): T. Seo, K. Takahashi, M. Sakuraba, J. Murota
  • Journal Title: Solid-State Electron. Vol. 53 Pages: 912-915
  • Peer Reviewed
• [Journal Article] Improvement in Negative Differential Conductance Characteristics of Hole Resonant-Tunneling Diodes with High Ge Fraction Si/Strained Si_<1-x>Ge_x/Si(100)Heterostructure (2009)
  • Author(s): T.Seo
  • Journal Title: Solid-State Electron. 53 Pages: 912-915
  • Peer Reviewed
• [Journal Article] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure (2008)
  • Author(s): T. Seo, M. Sakuraba, J. Murota
  • Journal Title: Thin Solid Films Vol. 517 Pages: 110-112
  • Peer Reviewed
• [Journal Article] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction (x>0.4) Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure (2008)
  • Author(s): T. Seo, M. Sakuraba, J. Murota
  • Journal Title: Appl.Surf.Sci. Vol. 254 Pages: 6265-6267
  • Peer Reviewed
• [Journal Article] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si / Strained Si_<1-x>Ge_x / Si (100) Heterostructure (2008)
  • Author(s): T. Seo
  • Journal Title: Thin Solid Films 517 Pages: 110-112
  • Peer Reviewed
• [Journal Article] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction(x>0.4)Si/Strained Si_<1-x> Ge_x/Si(100)Heterostructure (2008)
  • Author(s): T. Seo
  • Journal Title: Appl. Surf. Sci. 254(in press)
  • Peer Reviewed
• [Journal Article] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si_<1-x>Ge_x Epitaxially Grown on Si (100) (2007)
  • Author(s): M. Sakuraba, R. Ito, T. Seo, J. Murota
  • Journal Title: ECS Trans. Vol. 11(Invited Paper) Pages: 131-139
  • Peer Reviewed
• [Journal Article] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Prder Hterostructures of Si/Strained Si_<1-x> Ge_x Epitaxially Grown on Si(100)(Invited Paper) (2007)
  • Author(s): M. Sakuraba
  • Journal Title: ECS Trans. 11 Pages: 131-139
  • Peer Reviewed
• [Presentation] Resonant Tunneling Diodes with Highly Strained Heterostructures of Si/Si_<1-x>Ge_x Epitaxially Grown on Si(100) (2009)
  • Author(s): M. Sakuraba, J. Murota
  • Organizer: 2nd French Research Organizations-Tohoku University Joint Workshop on Frontier Materials
  • Place of Presentation: Sendai, Japan
• [Presentation] Resonant Tunneling Diodes with Highly Strained Heterostructures of Si/Si_<1-x>Ge_x Epitaxially Grown on Si(100) (2009)
  • Author(s): M. Sakuraba, J. Murota
  • Organizer: 1st Int. Workshop on Si Based Nano-Electronics and-Photonics (SiNEP-09)
  • Place of Presentation: Vigo, Spain(Invited Paper)
• [Presentation] Resonant Tunneling Diodes with Highly Strained Heterostructures of Si/Sil-xGex Epitaxially Grown on Si(100)(Invited Paper) (2009)
  • Author(s): M.Sakuraba
  • Organizer: 1st Int.Workshop on Si Based Nano-Electronics and -Photonics(SiNEP-09)
  • Place of Presentation: Vigo, Spain
• [Presentation] Fabrication of Hole Resonant Tunneling Diodes Utilizing Nanometer-Order Strained SiGe/Si(100) Heterostructures with High Ge Fraction (2008)
  • Author(s): M. Sakuraba, R. Ito, T. Seo, J. Murota
  • Organizer: 4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: Sendai, Japan
• [Presentation] Hole Resonant Tunneling Diodes Utilizing High Ge Fraction (x>0.5) Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure with Improved Performance at Higher Temperature above 200K (2008)
  • Author(s): K. Takahashi, T. Seo, M. Sakuraba, J. Murota
  • Organizer: 4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: Sendai, Japan
• [Presentation] Improvement in Negative Differential Conductance Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure (2008)
  • Author(s): T. Seo, K. Takahashi, M. Sakuraba, J. Murota
  • Organizer: 4th Int. SiGe Technology and Device Meeting (ISTDM2008)
  • Place of Presentation: Hsinchu, Taiwan
• [Presentation] Improvement in Negative Differential Conductance Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction Si / Strained Si_<1-x>Ge_x / Si (100) Heterostructure (2008)
  • Author(s): T. Seo
  • Organizer: 4th Int. SiGe Technology and Device Meeting (ISTDM2008)
  • Place of Presentation: Hsinchu, Taiwan
• [Presentation] Hole Resonant Tunneling Diodes Utilizing High Ge Fraction (x>0.5) Si / Strained Si_<1-x>Ge_x / Si (100) Heterostructure with Improved Performance at Higher Temperature above 200 K (2008)
  • Author(s): K. Takahashi
  • Organizer: 4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: Sendai, Japan
• [Presentation] Fabrication of Hole Resonant Tunneling Diodes Utilizing Nanometer-Order Strained SiGe / Si (100) Heterostructures with High Ge Fraction (2008)
  • Author(s): M. Sakuraba
  • Organizer: 4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: Sendai, Japan
• [Presentation] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction (x>0.4) Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure (2007)
  • Author(s): T. Seo, M. Sakuraba, J. Murota
  • Organizer: 5th Int. Symp. Control of Semiconductor Interfaces (ISCSI-V)
  • Place of Presentation: Hachioji, Japan
• [Presentation] Characterization of Temperature-Dependent Hole Resonant Tunneling Properties with High Ge Fraction (x>0.4) Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure (2007)
  • Author(s): T. Seo, M. Sakuraba, J. Murota
  • Organizer: 3rd Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: Sendai, Japan
• [Presentation] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si_<1-x>Ge_x Epitaxially Grown on Si(100) (Invited Paper), Symp. E9 : ULSI (2007)
  • Author(s): M. Sakuraba, R. Ito, T. Seo, J. Murota
  • Organizer: Process Integration 5 (212th Meeting of the Electrochem. Soc.)
  • Place of Presentation: Washington, DC, USA(Invited Paper)
• [Presentation] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure (2007)
  • Author(s): T. Seo, M. Sakuraba, J. Murota
  • Organizer: 5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5)
  • Place of Presentation: Marseille, France
• [Presentation] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si_<1-x> Ge_x/Si(100)Heterostructure (2007)
  • Author(s): T. Seo
  • Organizer: 5th Int. Conf. Silicon Epitaxy and Heterostructures(ICSI-5)
  • Place of Presentation: Marseille, France
• [Presentation] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si_<1-x> Ge_x Epitaxially Grown on Si(100)(Invited Paper) (2007)
  • Author(s): M. Sakuraba
  • Organizer: Symp. E9: ULSI Process Integration 5(212th Meeting of the Electrochem. Soc.)
  • Place of Presentation: Washington, DC, USA
• [Presentation] Characterization of Temperature-Dependent Hole Resonant Tunneling Properties with High Ge Fraction(x>0.4)Si/Strained Si_<1-x> (2007)
  • Author(s): T. Seo
  • Organizer: 3rd Int. Workshop on New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: Sendai, Japan
• [Presentation] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction(x>0.4)Si/Strained Si_<1-x> Ge_x/Si(100)Heterostructure (2007)
  • Author(s): T. Seo
  • Organizer: 5th Int. Symp. Control of Semiconductor Interfaces(ISCSI-V)
  • Place of Presentation: Hachioji, Japan