Growth of GaN thin film and fabrication of vertical light emitting diode using CrN nano-crystalline buffer layer

• Project/Area Number: 19560008
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Tohoku University
• Principal Investigator: HANADA Takashi (2008) Tohoku University, 金属材料研究所, 助教 (80211481); ちょ 明煥 (2007) Tohoku University, 金属材料研究所, 准教授 (00361171)
• Co-Investigator(Kenkyū-buntansha): HANADA Takashi 東北大学, 金属材料研究所, 助教 (80211481)
• Project Period (FY): 2007 – 2008
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000); Fiscal Year 2008: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2007: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
• Keywords: 薄膜成長 / 光素子 / 窒化物半導体

Research Abstract

サファイヤc面基板上に高品質GaNを成長するためCrNバッファ層を導入した。CrN層は過塩素酸ベースの混合溶液で選択的に化学エッチングされ、GaN自立膜を基板からケミカルリフトオフ(CLO)できた。CLOプロセスによるダメージの導入はなく、縦型GaN-LEDを作製し電流注入発光を観測した。CLOにより複数基板からのLED剥離は一括処理でき、基板は再利用できるため、従来のGaN-LED作製法に比べ大幅なコスト低減が可能となる。

Research Products

• [Journal Article] Lattice strain in bulk GaN epilayers grown on CrN/sapphire template (2009)
  • Author(s): S. W. Lee, J. S. Ha, Hyun-Jae Lee, Hyo-Jong Lee, H. Goto, T. Hanada, T. Goto, K. Fujii, M. W. Cho, and T. Yao
  • Journal Title: Appl. Phys. Lett 94
  • Peer Reviewed
• [Journal Article] Lattice strain in bulk GaN epilayers grown on CrN/sapphire template (2009)
  • Author(s): S. W. Lee, 他
  • Journal Title: Appl. Phys. Lett 94
  • Peer Reviewed
• [Journal Article] The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process (2008)
  • Author(s): Ha JS, et. al.
  • Journal Title: IEEE PHOTONICS TECHNOLOGY LETTERS 20 Pages: 175-177
  • Peer Reviewed
• [Journal Article] Analysis of the relation between leakage current and dislocations in GaN-based light-emittins devices (2007)
  • Author(s): S. W. Lee, et. al.
  • Journal Title: Phys. stat. sol. (c) 4 Pages: 37-40
  • Peer Reviewed
• [Presentation] Crystallo -graphic Investigation of Nitride C- Sapphire Substrate by Grazing Incidence X-ray Diffraction and Transmission Electron Microscopy (2008)
  • Author(s): H. J. Lee, J. S. Ha, S. K. Hong, S. W. Lee, H. J. Lee, S. H. Lee, T. Minegishi, T. Hanada, M. W. Cho, and T. Yao
  • Organizer: The International Conference on the Textures of Materials
  • Place of Presentation: Pittsburgh, USA
• [Presentation] The Realization of Vertical Light Emitting Diodes (V-LEDs) Using Chemical Lift-off (CLO) Processes (2007)
  • Author(s): S. W. Lee, et. al.
  • Organizer: 2007 MRS Fall Meeting
  • Place of Presentation: Boston, USA
  • Year and Date: 2007-12-31