| Project/Area Number |
19560308
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kitami Institute of Technology |
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Principal Investigator |
NOYA Atsushi Kitami Institute of Technology, 工学部, 教授 (60133807)
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| Co-Investigator(Kenkyū-buntansha) |
TAKEYAMA Mayumi 北見工業大学, 工学部, 准教授 (80236512)
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| Project Period (FY) |
2007 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2009: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2008: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2007: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Keywords | 薄膜 / ZrB_2 / 化合物 / 配線 / バリヤ / ZrB2 / 配緑 |
|---|
| Research Abstract |
We have prepared thin Zr-B films at low temperatures as a new material applicable to an extremely thin barrier against Cu diffusion in Si-ULSI metallization. The sputter-deposited Zr-B films from a composite target mainly consist of ZrB_2 phase with a nanocrystalline texture on SiO_2 and a fiber texture on Cu. The resistivity of the Zr-B films depends on the substrate of SiO_2 or Cu. The constituent ratio of B/Zr is almost 2, though the contaminants of oxygen, nitrogen, and carbon are incorporated in the film. The nanocrystalline structure of the Zr-B film on SiO_2 is stable due to annealing at temperatures up to 500℃ for 30 min. We applied the 3-nm thick Zr-B film to a diffusion barrier between Cu and SiO_2, and the stable barrier properties were confirmed. We can demonstrate that the thin Zr-B film is a promising candidate for thin film application to a metallization material in Si-ULSIs.
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