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Development of very low-power dynamically reconfigurable microprocessors with nonvolatile memories

Research Project

Project/Area Number 19760229
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeSingle-year Grants
Research Field Electron device/Electronic equipment
Research InstitutionTokyo Institute of Technology

Principal Investigator

YAMAMOTO Shuu'ichirou  Tokyo Institute of Technology, 大学院・総合理工学研究科, 助教 (50313375)

Project Period (FY) 2007 – 2009
Project Status Completed (Fiscal Year 2009)
Budget Amount *help
¥3,780,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥480,000)
Fiscal Year 2009: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2008: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2007: ¥1,700,000 (Direct Cost: ¥1,700,000)
Keywordsマイクロプロセッサ / 動的再構成論理回路 / 不揮発性メモリ / 電源遮断 / 低消費電力
Research Abstract

In order to develop microprocessors with very low-power consumption and high performance, novel nonvolatile memory circuits have been proposed, designed and analyzed. Evaluation of the circuits was done by a circuit simulator. Dynamically reconfigurable microprocessors that can execute information processing with very high speed using limited circuit layout area were designed. Utilization method of the nonvolatile memory circuits in the dynamically reconfigurable microprocessors was proposed. Consequently, basis of developing very low-power dynamically reconfigurable microprocessors with nonvolatile memories have been established.

Report

(4 results)
  • 2009 Annual Research Report   Final Research Report ( PDF )
  • 2008 Annual Research Report
  • 2007 Annual Research Report
  • Research Products

    (38 results)

All 2010 2009 2008 2007

All Journal Article (4 results) (of which Peer Reviewed: 4 results) Presentation (31 results) Book (1 results) Patent(Industrial Property Rights) (2 results)

  • [Journal Article] Nonvolatile Static Random Access Memory Using Resistive Switching Devices: Variable-Transconductance Metal-Oxide-Semiconductor Field-Effect-Transistor Approach2010

    • Author(s)
      Shuu'ichirou Yamamoto, Yusuke Shuto, Satoshi Sugahara
    • Journal Title

      Jpn. J. Appl. Phys. 49

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Nonvolatile Static Random Access Memory Using Resistive Switching Devices : Variable-Transconductance Metal-Oxide-Semiconductor Field-Effect-Transistor Approach2010

    • Author(s)
      Shuu'ichirou Yamamoto, Yusuke Shuto, Satoshi Sugahara
    • Journal Title

      Jpn.J.Appl.Phys. 49

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Nonvolatile SRAM and flip-flop architectures using magnetic tunnel junctions with current-induced magnetization switching technology2009

    • Author(s)
      Shuu'ichirou Yamamoto, Satoshi Sugahara
    • Journal Title

      Jpn. J. Appl. Phys. 48

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Nonvolatile SRAM and flip-flop architectures using magnetic tunnel junctions with current-induced magnetization switching technology2009

    • Author(s)
      Shuu'ichirou Yamamoto, Satoshi Sugahara
    • Journal Title

      Jpn.J.Appl.Phys. 48

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Presentation] Nonvolatile delay flip-flop using pseudo-spin-MOSFETs and its power-gating applications2010

    • Author(s)
      Shuu'ichirou Yamamoto, Satoshi Sugahara
    • Organizer
      11th Joint MMM-Intermag Conference, Washington DC
    • Year and Date
      2010-01-20
    • Related Report
      2009 Final Research Report
  • [Presentation] Nonvolatile delay flip-flop using pseudo-spin-MOSFETs and its power-gating applications2010

    • Author(s)
      山本修一郎
    • Organizer
      11th Joint MMM-Intermag Conference
    • Place of Presentation
      Washington DC, USA
    • Year and Date
      2010-01-20
    • Related Report
      2009 Annual Research Report
  • [Presentation] Nonvolatile power-gating microprocessor concepts using nonvolatile SRAM and flip-flop2009

    • Author(s)
      Shuu'ichirou Yamamoto, Yusuke Shuto, Satoshi Sugahara
    • Organizer
      International Symposium on Silicon Nano Devices in 2030
    • Place of Presentation
      Tokyo
    • Year and Date
      2009-10-13
    • Related Report
      2009 Final Research Report
  • [Presentation] Nonvolatile power-gating microprocessor concepts using nonvolatile SRAM and flip-flop2009

    • Author(s)
      山本修一郎
    • Organizer
      G-COE PICE International Symposium on Silicon Nano Devices in 2030
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2009-10-13
    • Related Report
      2009 Annual Research Report
  • [Presentation] Nonvolatile SRAM(NV-SRAM) Using Functional MOSFET Merged with Resistive Switching Devices2009

    • Author(s)
      Shuu'ichirou Yamamoto, Yusuke Shuto, Satoshi Sugahara
    • Organizer
      IEEE 2009 Custom Integrated Circuits Conference (CICC)
    • Place of Presentation
      San Jose
    • Year and Date
      2009-09-15
    • Related Report
      2009 Final Research Report
  • [Presentation] Nonvolatile SRAM(NV-SRAM)Using Functional MOSFET Merged with Resistive Switching Devices2009

    • Author(s)
      山本修一郎
    • Organizer
      IEEE 2009Custom Integrated Circuits Conference
    • Place of Presentation
      San Jose, USA
    • Year and Date
      2009-09-15
    • Related Report
      2009 Annual Research Report
  • [Presentation] 擬似スピンMOSFETを用いた不揮発性DFF:バルーンDFFとの比較2009

    • Author(s)
      山本修一郎、菅原聡
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山
    • Year and Date
      2009-09-10
    • Related Report
      2009 Final Research Report
  • [Presentation] 擬似スピンMOSFETを用いた不揮発性DFF:バルーンDFFとの比較2009

    • Author(s)
      山本修一郎
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山市
    • Year and Date
      2009-09-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] マイクロプロセッサにおけるエマージングメモリデバイスへの期待2009

    • Author(s)
      山本修一郎、菅原聡、前島英雄
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山
    • Year and Date
      2009-09-09
    • Related Report
      2009 Final Research Report
  • [Presentation] マイクロプロセッサにおけるエマージングメモリデバイスへの期待2009

    • Author(s)
      山本修一郎
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山市
    • Year and Date
      2009-09-09
    • Related Report
      2009 Annual Research Report
  • [Presentation] Nonvolatile delay flip-flop using magnetic tunnel junctions with current-induced magnetization switching architecture2009

    • Author(s)
      Shuu'ichirou Yamamoto, Satoshi Sugahara
    • Organizer
      IEEE International Magnetics Conference
    • Place of Presentation
      Sacramento
    • Year and Date
      2009-05-07
    • Related Report
      2009 Final Research Report
  • [Presentation] Nonvolatile delay flip-flop using magnetic tunnel junctions with current-induced magnetization switching architecture2009

    • Author(s)
      山本修一郎
    • Organizer
      IEEE International Magnetics Conference
    • Place of Presentation
      Sacramento, USA
    • Year and Date
      2009-05-07
    • Related Report
      2009 Annual Research Report
  • [Presentation] ノンポーラ型抵抗変化素子のSPICEモデル2009

    • Author(s)
      山本修一郎、菅原聡
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      つくば
    • Year and Date
      2009-04-02
    • Related Report
      2009 Final Research Report
  • [Presentation] ノンポーラ型抵抗変化素子を用いた不揮発性SRAM2009

    • Author(s)
      山本修一郎、周藤悠介、菅原聡
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      つくば
    • Year and Date
      2009-04-02
    • Related Report
      2009 Final Research Report
  • [Presentation] ノンポーラ型抵抗変化素子のSPICEモデル2009

    • Author(s)
      山本修一郎
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      つくば市
    • Year and Date
      2009-04-02
    • Related Report
      2009 Annual Research Report
  • [Presentation] ノンポーラ型抵抗変化素子を用いた不揮発性SRAM2009

    • Author(s)
      山本修一郎
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      つくば市
    • Year and Date
      2009-04-02
    • Related Report
      2009 Annual Research Report
  • [Presentation] スピン注入磁化反転MTJを用いた不揮発性Dフリップフロップ2009

    • Author(s)
      山本修一郎、菅原聡
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      つくば
    • Year and Date
      2009-04-01
    • Related Report
      2009 Final Research Report
  • [Presentation] スピン注入磁化反転MTJを用いた不揮発性Dフリップフロップ2009

    • Author(s)
      山本修一郎
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      つくば市
    • Year and Date
      2009-04-01
    • Related Report
      2009 Annual Research Report
  • [Presentation] Analysis and design of nonvolatile SRAM using magnetic tunnel junctions with current-induced magnetization switching technology2008

    • Author(s)
      Shuu'ichirou Yamamoto, Satoshi Sugahara
    • Organizer
      53rd Annual Conf. Magnetism and Magnetic Materials
    • Place of Presentation
      Austin
    • Year and Date
      2008-11-12
    • Related Report
      2009 Final Research Report
  • [Presentation] Analysis and design of nonvolatile SRAM using magnetic tunnel junctions with current-induced magnetization switching technology2008

    • Author(s)
      Shuu'ichirou Yamamoto
    • Organizer
      53rd Annual Conf. on Magnetism and Magnetic Materials
    • Place of Presentation
      Austin, USA
    • Year and Date
      2008-11-12
    • Related Report
      2008 Annual Research Report
  • [Presentation] スピン注入磁化反転MTJを用いた不揮発性SRAM:通常動作時消費電力の削減2008

    • Author(s)
      山本修一郎、菅原聡
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      春日井
    • Year and Date
      2008-09-05
    • Related Report
      2009 Final Research Report
  • [Presentation] スピン注入磁化反転MTJを用いた不揮発性SRAM : 通常動作時消費電力の削減2008

    • Author(s)
      山本修一郎
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      春日井市
    • Year and Date
      2008-09-05
    • Related Report
      2008 Annual Research Report
  • [Presentation] スピン注入磁化反転MTJを用いた不揮発性SRAM:仮想接地セルアーキテクチャ2008

    • Author(s)
      山本修一郎、菅原聡
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      船橋
    • Year and Date
      2008-03-30
    • Related Report
      2009 Final Research Report
  • [Presentation] スピン注入磁化反転MTJを用いた不揮発性SRAM:Vhalfの影響2008

    • Author(s)
      山本修一郎、菅原聡
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      船橋
    • Year and Date
      2008-03-30
    • Related Report
      2009 Final Research Report
  • [Presentation] スピン注入磁化反転MTJを用いた不揮発性SRAM:Vhalfの影響2008

    • Author(s)
      山本 修一郎
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      船橋市
    • Year and Date
      2008-03-30
    • Related Report
      2007 Annual Research Report
  • [Presentation] スピン注入磁化反転MTJを用いた不揮発性SRAM:仮想接地セルアーキテクチヤ2008

    • Author(s)
      山本 修一郎
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      船橋市
    • Year and Date
      2008-03-30
    • Related Report
      2007 Annual Research Report
  • [Presentation] Nonvolatile SRAM and flip-flop architectures using magnetic tunnel junctions with current-induced magnetization switching technology2007

    • Author(s)
      Shuu'ichirou Yamamoto, Satoshi Sugahara
    • Organizer
      52nd Annual Conf. Magnetism and Magnetic Materials
    • Place of Presentation
      Tampa
    • Year and Date
      2007-11-09
    • Related Report
      2009 Final Research Report
  • [Presentation] Nonvolatile SRAM and flip-flop architectures using magnetic tunnel junctions with current-induced magnetization switching technology2007

    • Author(s)
      Shuu'icliirou Yamamoto
    • Organizer
      52nd Annual Conf. on Magnetism and Magnetic Materials
    • Place of Presentation
      Tampa, Florida
    • Year and Date
      2007-11-09
    • Related Report
      2007 Annual Research Report
  • [Presentation] pseudo spin-MOSFET/spin-MOSFETの不揮発性SRAM/ラッチ回路への応用2007

    • Author(s)
      山本修一郎、菅原聡
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      札幌
    • Year and Date
      2007-09-07
    • Related Report
      2009 Final Research Report
  • [Presentation] スピン注入磁化反転MTJを用いた不揮発性SRAM/ラッチ回路2007

    • Author(s)
      山本修一郎、菅原聡
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      札幌
    • Year and Date
      2007-09-07
    • Related Report
      2009 Final Research Report 2007 Annual Research Report
  • [Presentation] pseudo spin-MOSFET/spin-MOSFETの不揮発性SPAM/ラッチ回路への応用2007

    • Author(s)
      山本 修一郎
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      札幌市
    • Year and Date
      2007-09-07
    • Related Report
      2007 Annual Research Report
  • [Book] スピントロニクスの基礎と材料・応用技術の最前線2009

    • Author(s)
      山本修一郎、周藤悠介、菅原聡
    • Total Pages
      421
    • Publisher
      CMC出版
    • Related Report
      2009 Annual Research Report 2009 Final Research Report
  • [Patent(Industrial Property Rights)] 記憶回路2007

    • Inventor(s)
      山本修一郎、菅原聡
    • Industrial Property Rights Holder
      東京工業大学
    • Industrial Property Number
      2007-225697
    • Filing Date
      2007-08-31
    • Related Report
      2007 Annual Research Report
  • [Patent(Industrial Property Rights)] ラッチ回路およびフリップフロップ回路2007

    • Inventor(s)
      山本修一郎、菅原聡
    • Industrial Property Rights Holder
      東京工業大学
    • Industrial Property Number
      2007-227261
    • Filing Date
      2007-09-03
    • Related Report
      2007 Annual Research Report

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Published: 2007-04-01   Modified: 2016-04-21  

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