Study on high-voltage and high-power nitrided-based transistor amplifiers operated at quasi-millimeter wave frequencies

• Project/Area Number: 19H00761
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Review Section: Medium-sized Section 21:Electrical and electronic engineering and related fields
• Research Institution: Kwansei Gakuin University (2020-2021); University of Fukui (2019)
• Principal Investigator: Kuzuhara Masaaki 関西学院大学, 工学部, 教授 (20377469)
• Co-Investigator(Kenkyū-buntansha): ASUBAR JOEL 福井大学, 学術研究院工学系部門, 准教授 (10574220) ; 分島 彰男 名古屋工業大学, 工学(系)研究科(研究院), 准教授 (80588575) ; 只友 一行 山口大学, その他部局等, 名誉教授 (10379927)
• Project Period (FY): 2019-04-01 – 2022-03-31
• Project Status: Completed (Fiscal Year 2021)
• Budget Amount: ¥45,500,000 (Direct Cost: ¥35,000,000、Indirect Cost: ¥10,500,000); Fiscal Year 2021: ¥12,740,000 (Direct Cost: ¥9,800,000、Indirect Cost: ¥2,940,000); Fiscal Year 2020: ¥16,380,000 (Direct Cost: ¥12,600,000、Indirect Cost: ¥3,780,000); Fiscal Year 2019: ¥16,380,000 (Direct Cost: ¥12,600,000、Indirect Cost: ¥3,780,000)
• Keywords: 準ミリ波 / HEMT / AlGaN/GaN / 電力増幅器 / 無線電力伝送 / 破壊電界 / 電力利得 / トランジスタ / 窒化物半導体 / 高出力 / 高電子移動度トランジスタ / 電力増幅 / 耐圧

Outline of Research at the Start

本研究の概要は、24 GHz帯（免許不要の産業・科学・医療バンド）の準ミリ波帯で電力増幅が可能な小型の高出力GaNトランジスタの開発を行う研究である。
GaNの理想の破壊電界強度3.3 MV/cmに近い絶縁特性を得るべく、半絶縁性GaN基板の上にトランジスタを作製し、その基本構造は、AlGaN/GaNヘテロ接合上に形成したサブミクロン長のゲート電極をもつ高電子移動度トランジスタ（HEMT）とする。開発するトランジスタの目標性能は、準ミリ波帯で無線電力伝送実験が可能となるよう、電力利得6 dB以上で出力電力10 W以上（出力電力密度5 W/mm以上）とする。

Outline of Final Research Achievements

This work was performed to develop high-power GaN amplifiers for wireless-power-transmission applications. Various MOS-gate GaN-HEMT structures were studied to achieve high-gain and high-voltage performance at microwave and quasi-millimeter-wave frequencies. It was found that the developed GaN-MOSHEMT exhibited about 4-5 dB higher gain characteristics over a wide bias range from 20 to 50 V. Equivalent circuit analyses suggested high-frequency voltage gain (gm/gd) of the MOSHEMT was higher by 2.5-3 times than that for the conventional Schottky-gate HEMT. We have also measured electrical characteristics of semi-insulating GaN substrates to achieve high effective breakdown field. By increasing the doping concentration of Fe in the GaN substrate, we have succeeded in achieving an effective breakdown field of more than 2 MV/cm. Using the GaN substrate, we have designed a 24 GHz MOSHEMT amplifier with air-bridged gate fingers. The device fabrication was properly performed.

Academic Significance and Societal Importance of the Research Achievements

エネルギー自給率の向上を目指して再生可能エネルギーの開発と省エネ化が急務である。この解決策として無線電力伝送を用いた太陽光や洋上風力発電の推進が望まれる。本研究では、準ミリ波帯で動作する高出力動作可能なMOSゲートGaN-HEMTを開発する。またMOSゲートGaN-HEMTが従来HEMTに比べて高利得を示す要因を解明する。さらに高電圧HEMT動作をめざして、半絶縁性GaN基板の実効破壊電界強度の向上を推進し世界最高性能の実現をめざす。本研究で開発する技術は無線電力伝送に用いる電力増幅器の回路設計性を容易にし、アンテナやシステムの小型化など回路応用の汎用性を広げる利点を社会に提供できる。

Research Products

• [Journal Article] Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs (2021)
  • Author(s): Aakash Jadhav, Takashi Ozawa, Ali Baratov, Joel T. Asubar, Masaaki Kuzuhara, Akio Wakejima, Shunpei Yamashita, Manato Deki, Yoshio Honda, Sourajeet Roy, Hiroshi Amano, Biplab Sarkar
  • Journal Title: IEEE Journal of Electron Devices Volume: 9 Pages: 570-581
  • DOI: 10.1109/jeds.2021.3081463
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Stoichiometric imbalances in Mg-implanted GaN (2021)
  • Author(s): Kai C Herbert, Kazuki Shibata, Joel T Asubar, Masaaki Kuzuhara
  • Journal Title: Japanese Journal of Applied Physics Volume: 60 Issue: 6 Pages: 066504-066504
  • DOI: 10.35848/1347-4065/ac0248
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] 1. Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational Functions (2021)
  • Author(s): Aakash Jadhav, Takashi Ozawa, Ali Baratov, Joel T Asubar, Masaaki Kuzuhara, Akio Wakejima, Shunpei Yamashita, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Sourajeet Roy, Biplab Sarkar
  • Journal Title: EEE Transactions on Electron Devices Volume: 68 Issue: 12 Pages: 6059-6064
  • DOI: 10.1109/ted.2021.3119528
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique (2021)
  • Author(s): Rui Shan Low, Joel T. Asubar, Ali Baratov, Shunsuke Kamiya, Itsuki Nagase, Shun Urano, Shinsaku Kawabata, Hirokuni Tokuda, Masaaki Kuzuhara, Yusui Nakamura, Kenta Naito, Tomohiro Motoyama, Zenji Yatabe
  • Journal Title: Applied Physics Express Volume: 14 Issue: 3 Pages: 031004-031004
  • DOI: 10.35848/1882-0786/abe19e
  • NAID: 120007160996
  • Peer Reviewed / Open Access
• [Journal Article] Enhancement-Mode AlGaN/GaN MIS-HEMTs With High VTH and High IDmax Using Recessed-Structure With Regrown AlGaN Barrier (2020)
  • Author(s): Joel T. Asubar, Shinsaku Kawabata, Hirokuni Tokuda, Akio Yamamoto, and Masaaki Kuzuhara
  • Journal Title: IEEE Electron Device Letters Volume: 41 Issue: 5 Pages: 693-696
  • DOI: 10.1109/led.2020.2985091
  • Peer Reviewed
• [Journal Article] Design considerations for normally-off operation in Schottky gate p-GaN/AlGaN/GaN HEMTs (2020)
  • Author(s): Hirokuni Tokuda, Joel T. Asubar, Masaaki Kuzuhara
  • Journal Title: Japanese Journal of Applied Physics Volume: 59 Issue: 8 Pages: 084002-084002
  • DOI: 10.35848/1347-4065/aba329
  • Peer Reviewed / Open Access
• [Journal Article] Enhancement‐Mode AlGaN/GaN Vertical Trench Metal-Insulator-Semiconductor High‐Electron‐Mobility Transistors with a High Drain Current Fabricated Using the AlGaN Regrowth Technique (2020)
  • Author(s): Akio Yamamoto, Keito Kanatani, Norifumi Yoneda, Joel, T. Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
  • Journal Title: Physica Status Solidi A Volume: 217 Issue: 7 Pages: 19006221-7
  • DOI: 10.1002/pssa.201900622
  • Peer Reviewed
• [Journal Article] Influence of reactive-ion-etching depth on interface properties in Al2O3/n-GaN MOS diodes (2019)
  • Author(s): Hirokuni Tokuda, Sayaka Harada, Joel T. Asubar, and Masaaki Kuzuhara
  • Journal Title: Japanese Journal of Applied Physics Volume: 58 Issue: 10 Pages: 1065031-6
  • DOI: 10.7567/1347-4065/ab3d11
  • NAID: 210000156988
  • Peer Reviewed
• [Presentation] Characterization of mist-Al2O3 gate insulator and its applications in mist-Al2O3/AlGaN/GaN MOS-HEMTs (2022)
  • Author(s): T. Motoyama, S. Urano, A. Baratov, Y. Nakamura, M. Kuzuhara, J. T. Asubar, Z. Yatabe
  • Organizer: 第69回応用物理学会春季学術講演会
• [Presentation] AlGaN/GaN MIS-HEMTs with mist- and ALD Al2O3 gate dielectric (2022)
  • Author(s): S. Urano, J. T. Asubar, R. S. Low, F. Muhammad, M. Ishiguro, I. Nagase, A. Baratov, T. Motoyama, Y. Nakamura, M. Kuzuhara, Z. Yatabe
  • Organizer: 第69回応用物理学会春季学術講演会
• [Presentation] Enhanced gain characteristics of AlGaN/GaN MOS-HEMTs with Al2O3 gate dielectric (2021)
  • Author(s): K. Shibata, K. C. Herbert, A. Baratov, J. T. Asubar, A. Wakejima, M. Kuzuhara
  • Organizer: 2021 IEEE International Meeting for Future of Electron Devices, Kansai
  • Int'l Joint Research
• [Presentation] Electrical properties of GaN-based MIS-HEMTs with Al2O3 gate insulator deposited by ALD and mist-CVD techniques (2021)
  • Author(s): S. Urano, R. S. Low, M. Faris, M. Ishiguro, I. Nagase, A. Baratov, J. T. Asubar, T. Motoyama, Y. Nakamura, Z. Yatabe, M. Kuzuhara
  • Organizer: 2021 IEEE International Meeting for Future of Electron Devices, Kansai
  • Int'l Joint Research
• [Presentation] Mist chemical vapor deposited-Al2O3/AlGaN interfacial characterization for GaN MIS-HEMTs (2021)
  • Author(s): T. Motoyama, Z. Yatabe, Y. Nakamura, A. Baratov, R. S. Low, S. Urano, J. T. Asubar, M. Kuzuhara
  • Organizer: 2021 IEEE International Meeting for Future of Electron Devices, Kansai
  • Int'l Joint Research
• [Presentation] Fabrication and Characterization of ZrO2/AlGaN/GaN MIS-HEMTs with regrown AlGaN Layer (2021)
  • Author(s): S. Maeda, I. Nagase, A. Baratov, S. Urano,J. T. Asubar, A. Yamamoto, M. Kuzuhara
  • Organizer: 2021 IEEE International Meeting for Future of Electron Devices, Kansai
  • Int'l Joint Research
• [Presentation] Recessed gate GaN-based MIS-HEMTs with Al2O3 gate dielectric deposited by mist-CVD method (2021)
  • Author(s): M. Ishiguro, S. Urano, R. S. Low, M. Faris, I. Nagase, A. Baratov, J. T. Asubar, T. Motoyama, Y. Nakamura, Z. Yatabe, M. Kuzuhara
  • Organizer: 2021 IEEE International Meeting for Future of Electron Devices, Kansai
  • Int'l Joint Research
• [Presentation] GaN HEMT technology for low-loss and high-voltage applications (2021)
  • Author(s): Masaaki Kuzuhara
  • Organizer: Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2021)
  • Int'l Joint Research / Invited
• [Presentation] GaNへのMgイオン注入におけるN原子の影響 (2021)
  • Author(s): ハーバート 甲斐, 柴田 和樹, ジョエル・アスバル, 葛原 正明
  • Organizer: 応用物理学会春季学術講演会
• [Presentation] Effect of recoil-implanted N atoms on defect formation in Mg-implanted GaN (2020)
  • Author(s): Kai C. Herbert, Kazuki Shibata, Joel. T. Asubar, Masaaki Kuzuhara
  • Organizer: IEEE IMFEDK 2020 Satellite event
  • Int'l Joint Research
• [Presentation] Normally-off recessed-gate ZrO2/AlGaN/GaN MIS-HEMTs with regrown AlGaN barrier (2020)
  • Author(s): Itsuki Nagase, Joel T. Asubar, Rui Shan Low, Shun Urano, Hirokuni Tokuda, Akio Yamamoto, Masaaki Kuzuhara
  • Organizer: International Conference on Solid State Devices and Materials
  • Int'l Joint Research
• [Presentation] Effect of post-metallization annealing on properties of ZrO2/regrown-AlGaN/GaN structures (2020)
  • Author(s): Shun Urano, Joel T. Asubar, Itsuki Nagase, Rui Shan Low, Shunsuke Kamiya, Ali Baratov, Hirokuni Tokuda, Akio Yamamoto, Masaaki Kuzuhara
  • Organizer: IEEE IMFEDK 2020 Satellite event
  • Int'l Joint Research
• [Presentation] Improved interfaces of high-k ZrO2 and AlGaN via ex-situ MOVPE regrowth (2020)
  • Author(s): Itsuki Nagase, Joel T. Asubar, Rui Shan Low, Shun Urano, Shunsuke Kamiya, Ali Baratov, Hirokuni Tokuda, Akio Yamamoto, Masaaki Kuzuhara
  • Organizer: IEEE IMFEDK 2020 Satellite event
  • Int'l Joint Research
• [Presentation] AlGaN/GaN SG-HEMT と比べてMIS-HEMT の優れた高周波特性に関する研究 (2020)
  • Author(s): バラトフ アリ, 小澤渉至, 山下隼平, Joel T. Asubar, 徳田 博邦, 葛原 正明
  • Organizer: 電子情報通信学会 電子部品・材料研究会
• [Presentation] Improved insulator/semiconductor interfaces in Al2O3/AlGaN/GaN structures by AlGaN layer regrowth (2019)
  • Author(s): S. Kawabata, J. T. Asubar, H. Tokuda, A. Yamamoto, and M. Kuzuhara
  • Organizer: Compound Semiconductor Week 2019
  • Int'l Joint Research
• [Presentation] Improved on-state breakdown characteristics in AlGaN/GaN MOS-HEMTs with a gate field plate (2019)
  • Author(s): T. Nishitani, R. Yamaguchi, J. T. Asubar, H. Tokuda, and M. Kuzuhata
  • Organizer: Compound Semiconductor Week 2019
  • Int'l Joint Research
• [Presentation] Impact of regrown AlGaN layer on the properties of Al2O3/AlGaN/GaN metal-insulator-semiconductor structures (2019)
  • Author(s): J. T. Asubar, S. Kawabata, L. R. Shan, H. Tokuda, A. Yamamoto, and M. Kuzuhara
  • Organizer: 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 2019)
  • Int'l Joint Research
• [Presentation] Vertical GaN MOSFETs with a regrown AlGaN barrier layers (2019)
  • Author(s): M. Kuzuhara and A. Yamamoto
  • Organizer: EMN Epitaxy 2019, A39, Amsterdam, Netherland
  • Invited
• [Presentation] GaN-on-GaN HEMTs with high breakdown critical fields (2019)
  • Author(s): A. Aoai, K. Suzuki, A. Tamamoto, J. T. Asubar, H. Tokuda, N. Okada, K. Tadatomo, and M. Kuzuhara
  • Organizer: Topical Workshop on Heterostructure Microelectronics 2019
  • Int'l Joint Research
• [Presentation] Impact of SiN capping during ohmic annealing on performance of GaN-based MIS HEMTs (2019)
  • Author(s): L. S. Low, S. Kawabata, J. T. Asubar, H. Tokuda, and M. Kuzuhara
  • Organizer: IEEE IMFEDK 2019
  • Int'l Joint Research
• [Presentation] Sub-micron gate fabrication process for AlGaN/GaN HEMTs (2019)
  • Author(s): A. Baratov, T. Ozawa, J. T. Asubar, H. Tokuda, and M. Kuzuhara
  • Organizer: IEEE IMFEDK 2019
  • Int'l Joint Research
• [Presentation] Study on luminescence and leakage current of AlGaN/GaN HEMTs biased near off-state breakdown (2019)
  • Author(s): S. Kamiya, T. Nishitani, J. T. Asubar, H. Tokuda, and M. Kuzuhara
  • Organizer: IEEE IMFEDK 2019
  • Int'l Joint Research
• [Presentation] High-breakdown voltage GaN HEMTs fabricated on semi-insulating GaN substrates (2019)
  • Author(s): M. Kuzuhara, J. T. Asubar, and H. Tokuda
  • Organizer: Proc. SSLCHINA & IFWS 2019
  • Invited
• [Remarks] Database of Researchers
  • URL: http://researchers.kwansei.ac.jp/view?l=ja&u=200001196&sn=7&sm=sdgs&sl=ja&sp=1