| Budget Amount *help |
¥44,980,000 (Direct Cost: ¥34,600,000、Indirect Cost: ¥10,380,000)
Fiscal Year 2022: ¥9,230,000 (Direct Cost: ¥7,100,000、Indirect Cost: ¥2,130,000)
Fiscal Year 2021: ¥10,790,000 (Direct Cost: ¥8,300,000、Indirect Cost: ¥2,490,000)
Fiscal Year 2020: ¥13,000,000 (Direct Cost: ¥10,000,000、Indirect Cost: ¥3,000,000)
Fiscal Year 2019: ¥11,960,000 (Direct Cost: ¥9,200,000、Indirect Cost: ¥2,760,000)
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| Outline of Final Research Achievements |
We fabricated high-density Si-QDs with Ge core and studied their luminescence properties. Photoluminescence from the Si-QDs with Ge core was observed at room temperature in the near-infrared region, being attributed to radiative-recombination between quantized states in the Ge core with deep potential well for holes. We also designed and fabricated light emitting diodes having the Si-QDs with Ge core and observed a clear electroluminescence peaked at ~0.8eV under forward bias application of pulsed bias irrespective of pulse height in the range of -1~-4V. In addition to radiative recombination between higher order quantized states in the Ge core, the direct bandgap transition in Ge core may be involved in the EL signals.
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