| Budget Amount *help |
¥17,550,000 (Direct Cost: ¥13,500,000、Indirect Cost: ¥4,050,000)
Fiscal Year 2022: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2021: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2020: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2019: ¥9,100,000 (Direct Cost: ¥7,000,000、Indirect Cost: ¥2,100,000)
|
|---|
| Outline of Final Research Achievements |
In order to obtain knowledge to realize a new pulsed ion implantation method for next-generation power semiconductor integration technology, a high-purity pulsed heavy ion beam source for both p-type and n-type dopants is required. For the nitrogen ion beam for n-type dopant, we worked on improving the performance of a bipolar pulse accelerator, which combines the conventional pulsed heavy ion beam generation technology and pulsed high voltage technology, and then conducted beam irradiation experiments on semiconductor materials to verify the annealing effect and ion implantation effect. On the other hand, for an aluminum ion beam source for p-type dopant, we developed a bipolar pulse accelerator with a vacuum arc ion source and succeeded in generating a high-purity pulsed aluminum ion beam.
|
