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Fermiology and physical properties of beta-Ga2O3

Research Project

Project/Area Number 19K04503
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Review Section Basic Section 21050:Electric and electronic materials-related
Research InstitutionNational Institute of Advanced Industrial Science and Technology

Principal Investigator

Ito Toshimitsu  国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究主幹 (80356485)

Project Period (FY) 2019-04-01 – 2022-03-31
Project Status Completed (Fiscal Year 2021)
Budget Amount *help
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2021: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2020: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2019: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Keywords酸化ガリウム / フェルミオロジー / Ga2O3
Outline of Research at the Start

de Haas van Alphen効果とShubnikov de Haas効果を様々な結晶方位について測定し、フェルミ面の形状を推測する。バンド計算との比較・確認を行う。ホール面の検出も試みる。様々な温度や磁場方向に対してデータを蓄積し、解析することにより、有効質量、キャリア数、散乱時間を見積もる。ドーピング量を変化させ、キャリア濃度依存性からフェルミ面の変化、バンド構造を推測する。異方的な移動度を推測し、デバイス特性についても考察する。

Outline of Final Research Achievements

In order to discuss the electronic properties and device properties of Ga2O3 from its band structure, I measured anisotropic resistivity and Shubnikov de Haas (SdH) effect using high-quality crystals grown by myself. Resistivity is lowest along b direction and SdH frequency is highest for H // b, from which it is suggested that the band dispersion is largest and the effective mass is smallest along b direction. In order to suppress heating of Ga2O3 power devices effectively, current should flow along b direction in them.

Academic Significance and Societal Importance of the Research Achievements

β-Ga2O3は第三世代パワー半導体として注目され、デバイス試作の成功例も数多く報告されてきた。これらの研究は経験則からのアプローチであり、必ずしも基礎物性からの理解は十分ではなかった。本研究は基礎物性からデバイス特性について検討を試みたものであり、経験則を越えた学術的理解の第一歩となるものと言える。実用化に向けて研究が加速されることが期待される。また、バンド構造の理解が進み、基礎的な固体物理の観点からも重要な成果が得られた。

Report

(4 results)
  • 2021 Annual Research Report   Final Research Report ( PDF )
  • 2020 Research-status Report
  • 2019 Research-status Report
  • Research Products

    (13 results)

All 2021 2020 2019 Other

All Journal Article (4 results) (of which Peer Reviewed: 4 results) Presentation (8 results) (of which Int'l Joint Research: 4 results) Remarks (1 results)

  • [Journal Article] Low-temperature direct bonding of β-Ga2O3 and diamond substrates under atmospheric conditions2020

    • Author(s)
      Takashi Matsumae, Yuichi Kurashima, Hitoshi Umezawa, Koji Tanaka, Toshimitsu Ito, Hideyuki Watanabe, and Hideki Takagi
    • Journal Title

      Appl. Phys. Lett.

      Volume: 116 Issue: 14 Pages: 141602-141602

    • DOI

      10.1063/5.0002068

    • Related Report
      2020 Research-status Report
    • Peer Reviewed
  • [Journal Article] Hetero-integration of β-Ga2O3 and Diamond substrates by hydrophilic bonding technique2020

    • Author(s)
      Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Hitoshi Umezawa, Koji Tanaka, Toshimitsu Ito, Hideyuki Watanabe and Eiji Higurashi
    • Journal Title

      ECS Trans.

      Volume: 98 Issue: 4 Pages: 17-20

    • DOI

      10.1149/09804.0017ecst

    • Related Report
      2020 Research-status Report
    • Peer Reviewed
  • [Journal Article] Purification of β-Ga2O3 crystals by the zone refining method2019

    • Author(s)
      Ito Toshimitsu、Ozaki Yasuko、Tomioka Yasuhide
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: 11 Pages: 110908-110908

    • DOI

      10.7567/1347-4065/ab4d20

    • NAID

      210000157335

    • Related Report
      2019 Research-status Report
    • Peer Reviewed
  • [Journal Article] Compensation effects between impurity cations in single crystals of a wide gap semiconductor β-Ga2O3 prepared by the floating zone method2019

    • Author(s)
      Tomioka Yasuhide、Ozaki Yasuko、Inaba Hideki、Ito Toshimitsu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: 9 Pages: 091009-091009

    • DOI

      10.7567/1347-4065/ab39be

    • NAID

      210000156925

    • Related Report
      2019 Research-status Report
    • Peer Reviewed
  • [Presentation] Carrier density in Ga2O3 measured by infrared absorption2021

    • Author(s)
      E. Gribaudo, E. Gheeraert, and T. Ito
    • Organizer
      2021 MRS Spring Meeting & Exhibit
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] β-Ga2O3の電気特性に対する水素処理効果と経時変化2021

    • Author(s)
      赤迫瑞輝、山下善文、伊藤利充、鈴木弘朗、西川亘、林靖彦
    • Organizer
      2021年度応用物理・物理系学会中国四国支部合同学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] 20 kW Optical System for Growing Ga2O3 by the LDFZ method2021

    • Author(s)
      F. Rackerseder, T. Martin, and T. Ito
    • Organizer
      10th French-German Workshop on Oxide, Dielectric, and Laser Crystals 2021
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] β-Ga2O3薄膜とダイヤモンド基板の低温直接接合2020

    • Author(s)
      松前貴司、倉島優一、高木秀樹、梅沢仁、田中孝治、伊藤利充、渡邊幸志、日暮栄治
    • Organizer
      2020年度精密工学会 秋季大会学術講演会
    • Related Report
      2020 Research-status Report
  • [Presentation] Hetero-integration of β-Ga2O3 and diamond substrates by hydrophilic bonding technique2020

    • Author(s)
      Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Hitoshi Umezawa, Koji Tanaka, Toshimitsu Ito, Hideyuki Watanabe and Eiji Higurashi
    • Organizer
      Pacific Rim Meeting on Electrochemical and Solid State Science 2020
    • Related Report
      2020 Research-status Report
    • Int'l Joint Research
  • [Presentation] Effects of Polishing Damage on β-Ga2O3 Schottky Diodes Electrical Properties2020

    • Author(s)
      M. Gouveia, A. Traore, H. Umezawa, H. Inaba, T. Ito, T. Sakurai
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Research-status Report
  • [Presentation] Cyclic BCl3-based plasma treatments for enhancing surface quality of (010) β-Ga2O3 substrates2019

    • Author(s)
      Y. Douest, C. Mannequin, T. Ito, Y. Ozaki, H. Okumura, E. Gheeraert, K. Akimoto, M. Sasaki, T. Teramoto, C. Dussarrat
    • Organizer
      XXXIV International Conference on Phenomena in Ionized Gases (XXXIV ICPIG)
    • Related Report
      2019 Research-status Report
    • Int'l Joint Research
  • [Presentation] ワイドギャップ半導体β-Ga2O3の結晶育成と評価2019

    • Author(s)
      伊藤利充、尾崎康子、稲葉英樹、富岡泰秀
    • Organizer
      理研-産総研 第5回 量子技術イノベーションコアWorkshop
    • Related Report
      2019 Research-status Report
  • [Remarks] AIST: 産業技術総合研究所

    • URL

      https://www.aist.go.jp/

    • Related Report
      2019 Research-status Report

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Published: 2019-04-18   Modified: 2023-01-30  

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