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Understanding Channel Conductance Mechanism of Hf-based Ferroelectric-gate FETs Toward the Artificial Neural Network Application

Research Project

Project/Area Number 19K15021
Research Category

Grant-in-Aid for Early-Career Scientists

Allocation TypeMulti-year Fund
Review Section Basic Section 21050:Electric and electronic materials-related
Research InstitutionThe University of Tokyo

Principal Investigator

Toprasertpong Kasidit  東京大学, 大学院工学系研究科(工学部), 助教 (00826472)

Project Period (FY) 2019-04-01 – 2021-03-31
Project Status Completed (Fiscal Year 2020)
Budget Amount *help
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2020: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2019: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Keywords強誘電体FET / FeFET / AI計算 / HZO / 界面 / デバイス物理 / 強誘電体ゲートトランジスタ / 人工神経回路網 / 酸化ハフニウム
Outline of Research at the Start

本研究は強誘電体ゲートを用いた強誘電体ゲートトランジスタにおけるデバイス動作の物理機構を明らかにすることで人工神経回路網を構成する高性能なシナプス素子に向けた設計指針の確立と動作実証を目指す。強誘電体の分極機構および半導体側の反転層電荷の挙動を直接的に観測する手法を確立し、デバイス動作中のチャージダイナミクスを明らかにする。それに加え、待機状態における反転層電荷を調べることで、FeFETの状態保持を妨げる物理的要因を見出し、神経回路網の演算精度向上・高速化・保持時間改善を目指した素子の設計指針を確立する。

Outline of Final Research Achievements

This research aims to improve the hafnia-based ferroelectric transistors for AI hardware, particularly focusing on clarifying the device operation mechanism and establishing the device design guideline. We have established the method to avoid the severe tradeoff during fabrication process of ferroelectric transistors and demonstrated devices with excellent device performance and memory properties. We propose novel evaluation methods that reveal the physical phenomenon and device operation mechanism in ferroelectric transistors, which provides a device design guideline depending on the applications.

Academic Significance and Societal Importance of the Research Achievements

本研究で達成した強誘電体トランジスターの動作機構の解明と設計指針の確立により、強誘電体材料分野、固体物理分野、電子デバイス分野、およびAI分野をはじめとする幅広い研究分野に有意義な知見を得た。次世代メモリや次世代AIハードウェアとして世界中の企業等が検討し始めて期待されているこの材料・デバイスの基礎研究を行い、技術の基盤を作ったことで、技術の実用化と早期普及につながると期待される。

Report

(3 results)
  • 2020 Annual Research Report   Final Research Report ( PDF )
  • 2019 Research-status Report
  • Research Products

    (15 results)

All 2021 2020 2019 Other

All Journal Article (2 results) (of which Peer Reviewed: 2 results) Presentation (11 results) (of which Int'l Joint Research: 6 results,  Invited: 3 results) Remarks (2 results)

  • [Journal Article] Improved Ferroelectric/Semiconductor Interface Properties in Hf0.5Zr0.5O2 Ferroelectric FETs by Low-Temperature Annealing2020

    • Author(s)
      K. Toprasertpong, K. Tahara, T. Fukui, Z. Lin, K. Watanabe, M. Takenaka and S. Takagi
    • Journal Title

      IEEE Electron Device Lett.

      Volume: 41 Issue: 10 Pages: 1588-1591

    • DOI

      10.1109/led.2020.3019265

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Evaluation of polarization characteristics in metal/ferroelectric/semiconductor capacitors and ferroelectric field-effect transistors2020

    • Author(s)
      K. Toprasertpong, K. Tahara, M. Takenaka, and S. Takagi
    • Journal Title

      Appl. Phys. Lett.

      Volume: 116 Issue: 24 Pages: 242903-242903

    • DOI

      10.1063/5.0008060

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Presentation] HfZrO-based ferroelectric devices for lower power AI and memory applications2021

    • Author(s)
      S. Takagi, K. Toprasertpong, K. Tahara, E. Nako, R. Nakane, Z. Wang, X. Luo, T. E. Lee, and M. Takenaka
    • Organizer
      240th ECS Meeting
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Strategy toward HZO BEOL-FeRAM with low-voltage operation (<=1.2 V), low process temperature, and high endurance by thickness scaling2021

    • Author(s)
      K. Tahara, K. Toprasertpong, Y. Hikosaka, K. Nakamura, H. Saito, M. Takenaka, and S. Takagi
    • Organizer
      2021 Symposia on VLSI Technology and Circuits
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Critical impact of ferroelectric-phase formation annealing on MFIS interface of HfO2-based Si FeFETs2020

    • Author(s)
      K. Toprasertpong, K. Tahara, T. Fukui, Z.-Y. Lin, K. Watanabe, M. Takenaka, and S. Takagi
    • Organizer
      2020 International Conference on Solid State Devices and Materials (SSDM)
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Asymmetric polarization response of electrons and holes in Si FeFETs: Demonstration of absolute polarization hysteresis loop and inversion hole density over 2×1013 cm-22020

    • Author(s)
      K. Toprasertpong, Z.-Y. Lin, T.-E. Lee, M. Takenaka, and S. Takagi
    • Organizer
      2020 Symposia on VLSI Technology and Circuits
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Advanced CMOS technologies for ultra-low power logic and AI applications2020

    • Author(s)
      S. Takagi, K. Toprasertpong, K. Kato, K. Sumita, E. Nako, R. Nakane, K.-W. Jo, and M. Takenaka
    • Organizer
      IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2021
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] HfO2系FeFETにおける結晶化アニール温度とSi界面特性のトレードオフ2020

    • Author(s)
      トープラサートポン カシディット,田原建人,福井太一郎,林早ザオヤーン,渡辺耕坪,竹中充,高木信一
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] Si強誘電体FETにおける強誘電分極に誘起される反転層電荷の振る舞い2020

    • Author(s)
      トープラサートポン カシディット,林ザオヤーン,李宗恩,竹中充,高木信一
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] Si強誘電体FETにおける強誘電分極・反転層電荷・トラップ電荷のカップリングとメモリ特性への影響2020

    • Author(s)
      トープラサートポン カシディット,林ザオヤーン,李宗恩,竹中充,高木信一
    • Organizer
      電子情報通信学会 ICD/SDM/ITE-IST研究会
    • Related Report
      2020 Annual Research Report
    • Invited
  • [Presentation] 強誘電体FETのMOS界面における電荷分布の評価とデバイス動作の理解2020

    • Author(s)
      トープラサートポン カシディット,竹中充,高木信一
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Research-status Report
  • [Presentation] Direct observation of charge dynamics in FeFET by quasi-static split C-V and hall techniques: Revealing FeFET operation2019

    • Author(s)
      K. Toprasertpong, M. Takenaka, and S. Takagi
    • Organizer
      2019 IEEE International Electron Devices Meeting
    • Related Report
      2019 Research-status Report
    • Int'l Joint Research
  • [Presentation] TiN/Hf0.5Zr0.5O2/Si MFSキャパシタの電気特性に与える基板タイプの影響2019

    • Author(s)
      トープラサートポン カシディット,田原建人,福井太一郎,竹中充,高木信一
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Research-status Report
  • [Remarks] ResearchGate

    • URL

      https://www.researchgate.net/profile/Kasidit-Toprasertpong

    • Related Report
      2020 Annual Research Report
  • [Remarks] researchmap

    • URL

      https://researchmap.jp/toprasertpong/

    • Related Report
      2020 Annual Research Report

URL: 

Published: 2019-04-18   Modified: 2022-01-27  

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