| Budget Amount *help |
¥42,640,000 (Direct Cost: ¥32,800,000、Indirect Cost: ¥9,840,000)
Fiscal Year 2010: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000)
Fiscal Year 2009: ¥9,620,000 (Direct Cost: ¥7,400,000、Indirect Cost: ¥2,220,000)
Fiscal Year 2008: ¥26,780,000 (Direct Cost: ¥20,600,000、Indirect Cost: ¥6,180,000)
|
|---|
| Research Abstract |
We have developed carbon nanotube (CNT) field effect transistors (FETs) with ferroelectric thin films as gate insulators and applied to infrared sensors using pyroelectric effect of the ferroelectric thin films. In the case of FETs showing apparent semiconductive nature, the devices responded to the light inversely expecting from the pyroelectric effect due to the photoconductive effect of the CNTs. Additionally, we have found that the yield of the device with the response depending on the polarization direction of the ferroelectric film was much improved by covering the CNT channel with ionic liquid.
|
