Elucidation of charge transfer at the interface between semiconductor and insulator and mechanism of defect formation

• Project/Area Number: 20560025
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Musashi Institute of Technology
• Principal Investigator: MARUIZUMI Takuya Musashi Institute of Technology, 工学部, 教授 (00398893)
• Project Period (FY): 2008 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000); Fiscal Year 2010: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2009: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2008: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
• Keywords: 界面 / 材料シミュレーション / MOSFET / 絶縁膜 / 欠陥構造 / VASP法 / ハフニウム酸化物 / 元素添加 / SAC-CI法 / 励起エネルギ / NBTI / 半導体絶縁膜界面 / 電荷移動 / 活性化エネルギー

Research Abstract

Native defects existing in the three constituent regions of MOS (Metal Oxide Semiconductor) device, gate insulator, silicon substrate, and their interface, were examined with a first-principles method in order to elucidate their atomistic properties concerned with reliability issues of MOS devices. A Pb center defect in a Si/SiO_2 interface, B_<12> cluster in a Si substrate, oxygen vacancy and hafnium vacancy in HfO_2 were practically investigated and their fundamental characteristics were revealed in detail.

Research Products

• [Journal Article] Stable position of B_<12> Cluster Near Si(001) Surface and Its STM images (2010)
  • Author(s): 丸泉琢也, 佐藤満弘
  • Journal Title: ECS Trans. 33 Pages: 263-274
  • Peer Reviewed
• [Journal Article] Room-temperature electro-luminescence from Si microdisks with Ge quantum dots (2010)
  • Author(s): J.Xia, Y.Takeda, N.Usami, T.Maruizumi, Y.Shiraki
  • Journal Title: Optics Express 18 Pages: 13945-13950
  • Peer Reviewed
• [Journal Article] Simulation of dislocation accumulation in ULSI cells of reduced gate length (2010)
  • Author(s): M.Sato, T.Ohashi, K.Aikawa, T.Maruizumi, I.Kitgawa
  • Journal Title: Materials Science Forum 645-656 Pages: 1682-1685
  • NAID: 120004226665
  • Peer Reviewed
• [Journal Article] Stable position of B_<12> Cluster Near Si(001) Surface and Its STM images (2010)
  • Author(s): T.Maruizumi, S.Ito
  • Journal Title: ECS Transactions Volume: 33 Pages: 253-274
  • Peer Reviewed
• [Journal Article] Room-temperature electroluminescence from Si microdisks with Ge quantumdots (2010)
  • Author(s): J.Xia, Y.Takeda, N.Usami, T.Maruizumi, Y.Shiraki
  • Journal Title: Optics Express Volume: 18 Pages: 13945-13950
  • Peer Reviewed
• [Journal Article] Simulation of dislocation accumulation in ULSI cells of reduced gate length (2010)
  • Author(s): M.Sato, T.Ohashi, K.Aikawa, T.Maruizumi, I.Kitgawa
  • Journal Title: Materials Science Forum Volume: 645～656 Pages: 1682-1685
  • NAID: 120004226665
  • Peer Reviewed
• [Journal Article] 不純物がドープされたULSIセルに生じる転位の結晶塑性解析 (2009)
  • Author(s): 佐藤満弘、大橋鉄也、丸泉琢也、北川功
  • Journal Title: 日本機械学会論文集(A編) 75 Pages: 1056-1062
  • Peer Reviewed
• [Journal Article] Stable position of B_<12> cluster near Si(001)Surfaces and its STM images (2009)
  • Author(s): S.Ito, T.Maruizumi, Y.Suwa
  • Journal Title: 13^<th> International Workshop on Computational Electronics Pages: 305-308
  • Peer Reviewed
• [Journal Article] 不純物がドープされたULSIセルに生じる転位の結晶塑性解析 (2009)
  • Author(s): 佐藤満広、大橋鉄也、丸泉琢也
  • Journal Title: 日本機械学会論文集(A編) 75 Pages: 1056-1062
  • Peer Reviewed
• [Journal Article] Material Science for Nano-scale Electronic Devices (2008)
  • Author(s): 丸泉琢也
  • Journal Title: Activity Report 2008(Supercomputer Center, Institute for Solid State Physics, University of Tokyo) Pages: 105-105
• [Journal Article] Activated boron and its concentration profiles in heavily doped Si studied by soft x-ray photoelectron spectroscopy and Hall measurements (2008)
  • Author(s): K.Tsutui, T.Maruizumi, H.Nohira, T.Hattori, H.Iwai
  • Journal Title: J.Appl.Phys. 104
  • Peer Reviewed
• [Journal Article] MOSFETの負バイアス温度不安定性の微視的メカニズム (2008)
  • Author(s): 丸泉琢也、牛尾二郎
  • Journal Title: 応用物理 77 Pages: 676-680
  • NAID: 10021109362
  • Peer Reviewed
• [Journal Article] MOSFETの負バイアス温度不安定性の微視的メカニズム (2008)
  • Author(s): 丸泉琢也 牛尾二郎
  • Journal Title: 応用物理 77 Pages: 676-680
  • NAID: 10021109362
  • Peer Reviewed
• [Presentation] Surface segregation behavior of Sb, B, and As dopant atoms on Ge(111) surface (2011)
  • Author(s): T.Maruizumi, K.Sawano, J.Ushio, S.Abe, F.Iijima
  • Organizer: E-MRS 2011 Spring & Bilateral Meeting
  • Place of Presentation: ニース(フランス)
  • Year and Date: 2011-05-10
• [Presentation] 第一原理計算によるドーパント表面偏析挙動の検討 (2011)
  • Author(s): 飯島郁弥, 安倍章太郎, 澤野憲太郎, 丸泉琢也
  • Organizer: 2011年春季第58回応用物理関係連合講演会
  • Place of Presentation: 神奈川
  • Year and Date: 2011-03-24
• [Presentation] Si微小共振器中Ge量子ドットによる発光素子の開発 (2011)
  • Author(s): 丸泉琢也、夏金松、白木靖寛
  • Organizer: 電子通信情報学会2011年総合大会
  • Place of Presentation: 東京
  • Year and Date: 2011-03-14
• [Presentation] Si微小共振器中Ge量子ドットによる発光素子の開発 (2011)
  • Author(s): 丸泉琢也、夏金松、白木靖寛
  • Organizer: 電子通信情報学会2011年総合大会
  • Place of Presentation: 東京都市大(東京都)(招待講演)
  • Year and Date: 2011-03-14
• [Presentation] Stable position of B_<12> Cluster Near Si(001) Surface and Its STM images (2010)
  • Author(s): 丸泉琢也, 伊藤俊祐
  • Organizer: 218th Electrochemical Society Meeting
  • Place of Presentation: ラスベガス
  • Year and Date: 2010-10-12
• [Presentation] Stable position of B_<12> Cluster Near Si(001) Surface and Its STM images (2010)
  • Author(s): T.Maruizumi, S.Ito
  • Organizer: 218th Electrochemical Society Meeting
  • Place of Presentation: Las Vegas(USA)
  • Year and Date: 2010-10-12
• [Presentation] Ge量子ドットを有する1次元フォトニック結晶微小共振器による1.3μm帯での単一ピーク発光 (2010)
  • Author(s): 小林正人、夏金松、武田雄貴、宇佐美徳隆、丸泉琢也、白木靖寛
  • Organizer: 2010年秋季<第71回>応用物理学会学術講演会
  • Place of Presentation: 長崎大学水(長崎県)
  • Year and Date: 2010-09-16
• [Presentation] フォトニック結晶微小共振器を用いたSi系発光デバイスのエレクトロルミネッセンス (2010)
  • Author(s): 坪井俊紀、夏金松、深水聖司、宇佐美徳隆、丸泉琢也、白木靖寛
  • Organizer: 2010年秋季<第71回>応用物理学会学術講演会
  • Place of Presentation: 長崎大学(長崎県)
  • Year and Date: 2010-09-16
• [Presentation] Si表面近傍におけるボロンクラスタの安定位置とそのSTM像(4) (2010)
  • Author(s): 伊藤俊祐、丸泉琢也、諏訪雄二
  • Organizer: 第71回応用物理学術講演会
  • Place of Presentation: 長崎
  • Year and Date: 2010-09-14
• [Presentation] HfO_2中への元素添加の第一原理計算 (2010)
  • Author(s): 中山利紀、丸泉琢也
  • Organizer: 第71回応用物理学術講演会
  • Place of Presentation: 長崎
  • Year and Date: 2010-09-14
• [Presentation] Si表面近傍におけるボロンクラスタの安定位置とそのSTM像(3) (2010)
  • Author(s): 伊藤俊祐、丸泉琢也、諏訪雄二
  • Organizer: 2010年秋季<第71回>応用物理学会学術講演会
  • Place of Presentation: 長崎大学(長崎県)
  • Year and Date: 2010-09-14
• [Presentation] HfO_2中への元素添加の第一原理計算 (2010)
  • Author(s): 中山利紀、丸泉琢也
  • Organizer: 2010年秋季<第71回>応用物理学会学術講演会
  • Place of Presentation: 長崎大学(長崎県)
  • Year and Date: 2010-09-14
• [Presentation] Stable position of a boron cluster near Si surface (2010)
  • Author(s): 伊藤俊祐, 丸泉琢也
  • Organizer: 18th International Conference on Ion Implantation Technology
  • Place of Presentation: 京都
  • Year and Date: 2010-06-08
• [Presentation] Stable position of a boron cluster near Si surface (2010)
  • Author(s): S.Ito, T.Maruizumi
  • Organizer: 18th International Conference on Ion Implantation Technology
  • Place of Presentation: 京都大学(京都府)
  • Year and Date: 2010-06-08
• [Presentation] First-principles Examinationof As 3d5/2 X-ray Photoelectron Spectrum for Heavily Doped Arsenic Shallow Junctions (2010)
  • Author(s): K.Ban-i, T.Maruizumi
  • Organizer: 18th International Conference on Ion Implantation Technology
  • Place of Presentation: 京都
  • Year and Date: 2010-06-07
• [Presentation] First-principles Examinationof As 3d5/2 X-ray Photoelectron Spectrum for Heavily Doped Arsenic Shallow Junctions Prepared by Plasma Doping (2010)
  • Author(s): K.Ban-I, T.Maruizumi
  • Organizer: 18th International Conference on Ion Implantation Technology
  • Place of Presentation: 京都大学(京都府)
  • Year and Date: 2010-06-07
• [Presentation] Si表面近傍におけるボロンクラスタの安定位置(3) (2010)
  • Author(s): 伊藤俊祐、丸泉琢也、諏訪雄二
  • Organizer: 2010年春季第57回応用物理学会関係連合講演会
  • Place of Presentation: 神奈川
  • Year and Date: 2010-03-18
• [Presentation] Si表面近傍におけるボロンクラスタの安定位置(2) (2010)
  • Author(s): 伊藤俊祐、丸泉琢也、諏訪雄二
  • Organizer: 第57回応用物理学会関係連合講演会(2010年春季)
  • Place of Presentation: 東海大学湘南キャンパス
  • Year and Date: 2010-03-18
• [Presentation] マイクロディスク共振器を用いたSi系発光デバイスのエレクトロルミネッセンス (2010)
  • Author(s): 武田雄貴、夏金松、深水聖司、宇佐美徳隆、丸泉琢也、白木靖寛
  • Organizer: 第57回応用物理学会関係連合講演会(2010年春季)
  • Place of Presentation: 東海大学湘南キャンパス
  • Year and Date: 2010-03-18
• [Presentation] Si表面近傍におけるボロンクラスタの安定位置とそのSTM像(2) (2009)
  • Author(s): 伊藤俊佑、丸泉琢也、諏訪雄二
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山
  • Year and Date: 2009-09-09
• [Presentation] 第一原理計算によるSi中のAsドーパントのXPS解析 (2009)
  • Author(s): 伴井香苗、野平博司、丸泉琢也
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山
  • Year and Date: 2009-09-09
• [Presentation] Si表面近傍におけるボロンクラスタの安定位置とそのSTM像(2) (2009)
  • Author(s): 伊藤俊祐、丸泉琢也、諏訪雄二
  • Organizer: 第70回応用物理学会学術講演会(2009年秋季)
  • Place of Presentation: 富山大学
  • Year and Date: 2009-09-09
• [Presentation] 第一原理計算によるSi中のAsドーパントのXPS解析 (2009)
  • Author(s): 伴井香苗、野平博司、丸泉琢也
  • Organizer: 第70回応用物理学会学術講演会(2009年秋季)
  • Place of Presentation: 富山大学
  • Year and Date: 2009-09-09
• [Presentation] Stable position of B_<12> cluster near Si(001) surfaces and its STM images (2009)
  • Author(s): 伊藤俊祐, 丸泉琢也, 諏訪雄二
  • Organizer: 13^<th> International Workshop on Computational Electronics
  • Place of Presentation: 北京
  • Year and Date: 2009-05-28
• [Presentation] Stable position of B_<12> cluster near Si(001) surfaces and its STM images (2009)
  • Author(s): S.Ito、 T.Maruizumi, Y.Suwa
  • Organizer: 13th International Workshop on Computational Electronics
  • Place of Presentation: Beijing, China
  • Year and Date: 2009-05-28
• [Presentation] Si表面近傍におけるボロンクラスタの安定位置とそのSYM像 (2009)
  • Author(s): 伊藤俊佑、丸泉琢也、諏訪雄二
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: 茨城
  • Year and Date: 2009-04-01
• [Presentation] ULSIセル内に蓄積する転位のデバイス寸法依存性に関する数値的評価 (2008)
  • Author(s): 佐藤満弘、大橋鉄也、丸泉琢也
  • Organizer: 日本機械学会第21回計算力学講演会
  • Place of Presentation: 沖縄
  • Year and Date: 2008-11-01
• [Presentation] Si/Sio_2界面における水素原子と正固定電荷の移動(3) (2008)
  • Author(s): 丸泉琢也、牛尾二郎
  • Organizer: 第69回応用物理学学術講演会
  • Place of Presentation: 名古屋
  • Year and Date: 2008-09-02
• [Presentation] Si/SiO_2界面における水素原子と正固定電荷の移動(3) (2008)
  • Author(s): 丸泉琢也 牛尾二郎
  • Organizer: 第69回応用物理学学術講演会
  • Place of Presentation: 中部大学
  • Year and Date: 2008-09-02
• [Book] 量子ドット-エレクトロニクス最前線(分担執筆) (2011)
  • Author(s): 丸泉琢也、夏金松
  • Publisher: エヌティーエス社
• [Book] NTS、量子ドット-エレクトロニクスの最前線-(分担執筆)(Ge量子ドットを用いた高効率室温発光素子の開発)
  • Author(s): 丸泉琢也、夏金松
• [Remarks]
  • URL: http://www.risys.gl.tcu.ac.jp/Main.php?action=01&type=detail&tchCd=5001621