Elucidation of charge transfer at the interface between semiconductor and insulator and mechanism of defect formation
Project/Area Number |
20560025
|
Research Category |
Grant-in-Aid for Scientific Research (C)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Thin film/Surface and interfacial physical properties
|
Research Institution | Musashi Institute of Technology |
Principal Investigator |
MARUIZUMI Takuya Musashi Institute of Technology, 工学部, 教授 (00398893)
|
Project Period (FY) |
2008 – 2010
|
Project Status |
Completed (Fiscal Year 2010)
|
Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2010: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2009: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2008: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
|
Keywords | 界面 / 材料シミュレーション / MOSFET / 絶縁膜 / 欠陥構造 / VASP法 / ハフニウム酸化物 / 元素添加 / SAC-CI法 / 励起エネルギ / NBTI / 半導体絶縁膜界面 / 電荷移動 / 活性化エネルギー |
Research Abstract |
Native defects existing in the three constituent regions of MOS (Metal Oxide Semiconductor) device, gate insulator, silicon substrate, and their interface, were examined with a first-principles method in order to elucidate their atomistic properties concerned with reliability issues of MOS devices. A Pb center defect in a Si/SiO_2 interface, B_<12> cluster in a Si substrate, oxygen vacancy and hafnium vacancy in HfO_2 were practically investigated and their fundamental characteristics were revealed in detail.
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Report
(4 results)
Research Products
(45 results)