Shape formation in silicon surface by transfer photo-etching using solid phase reaction at fluorination agent-silicon interface.

• Project/Area Number: 20560107
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Production engineering/Processing studies
• Research Institution: Osaka University
• Principal Investigator: UCHIKOSHI Junichi Osaka University, 工学研究科, 助教 (90273581)
• Co-Investigator(Kenkyū-buntansha): MORITA Mizuho 大阪大学, 工学研究科, 教授 (50157905)
• Project Period (FY): 2008 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000); Fiscal Year 2010: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000); Fiscal Year 2009: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000); Fiscal Year 2008: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
• Keywords: フッ素化剤 / N-フルオロピリジニウム塩 / 光エッチング / 光転写 / シリコン / 3次元形状 / 半導体表面 / 形状創成 / 塗布 / エッチング / インクジェット / 半導体 / 表面 / 界面

Research Abstract

A new photo-etching method with N-fluoropyridinium salts is proposed in this study. Si is etched by applying N-fluoropyridinium salts to its surface and exposing the surface to light. The etched surface using liquid N-fluoropyridinium salts is smoother than that using solid N-fluoropyridinium salts. The etching depth increases with exposure time. H-terminated hydrophobic Si is easier to etch than OH-terminated hydrophilic Si. SiF_4 is produced by photo-etching. The number of processes in the new photo-etching method is fewer than that in the lithography and etching. The etching depth increases with light intensity. A ditch with different depths and a spherical surface are formed by exposing to light with different intensities at a time. It is expected to form arbitrary three-dimensional shape in a silicon surface by controlling light intensity distribution.

Research Products

• [Journal Article] Photoetching of Silicon by N-Fluoro pyridinium Salt (2010)
  • Author(s): Kentaro Tsukamoto, Junichi Uchikoshi, Shigeharu Goto, Tatsuya Kawase, Noritaka Ajari, Takabumi Nagai, Kenji Adachi, Kenta Arima, Mizuho Morita
  • Journal Title: Electrochemical and Solid-State Letters 13
  • Peer Reviewed
• [Journal Article] Photoetching of Silicon by N-Fluoropyridinium Salt (2010)
  • Author(s): Kentaro Tsukamoto, Junichi Uchikoshi, Shigeharu Goto, Tatsuya Kawase, Noritaka Ajari, Takabumi Nagai, Kenji Adachi, Kenta Arima, Mizuho Morita
  • Journal Title: Electrochemical and Solid-State Letters Volume: 13
  • Peer Reviewed
• [Journal Article] Absolute Line Profile Measurements of Silicon Plane Mirrors by Near-Infrared Inte rferometry (2008)
  • Author(s): Junichi UCHIKOSHI, Amane TSUDA, Noritaka AJARI, Taichirou OKAMOTO, Kenta ARIMA, Mizuho MORITA
  • Journal Title: Japanese Journal of Applied Physics 47 Pages: 8978-8981
  • Peer Reviewed
• [Journal Article] Characterization of Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Microscopy (2008)
  • Author(s): Xing WU, Junichi UCHIKOSHI, Takaaki HIROKANE, Ryuta YAMADA, Akihiro TAKEUCHI, Kenta ARIMA, Mizuho MORITA
  • Journal Title: Japanese Journal of Applied Physics 47 Pages: 3041-3045
  • NAID: 10022549248
  • Peer Reviewed
• [Journal Article] Absolute Line Profile Measurements of Silicon Plane Mirrors by Near-Infrared Interferometry (2008)
  • Author(s): Junichi UCHIKOSHI
  • Journal Title: Japanese Journal of Applied Physics Volume: 47 Pages: 8978-8981
  • Peer Reviewed
• [Journal Article] Characterization of Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Microscopy (2008)
  • Author(s): Xing WU
  • Journal Title: Japanese Journal of Applied Physics Volume: 47 Pages: 3041-3045
  • Peer Reviewed
• [Presentation] N-フルオロピリジニウム塩を用いた光エッチングによるシリコン表面の3次元形状の作製 (2011)
  • Author(s): 大谷真輝、打越純一、塚本健太郎、永井隆文、足達健二、川合健太郎、有馬健太、森田瑞穂
  • Organizer: 2011年度精密工学会春季大会学術講演会
  • Place of Presentation: 東京都
  • Year and Date: 2011-03-14
• [Presentation] N-フルオロピリジニウム塩を用いた光エッチングによるシリコン表面の3次元形状の作製 (2011)
  • Author(s): 大谷真輝、打越純一、塚本健太郎、永井隆文、足達健二、川合健太郎、有馬健太、森田瑞穂
  • Organizer: 2011年度精密工学会春季大会学術講演会
  • Place of Presentation: 東洋大学(東京都)(講演会は中止)
  • Year and Date: 2011-03-14
• [Presentation] Consideration of photo-etching mechanism of Si with N-fluoropyridinium salt (2010)
  • Author(s): Kentaro Tsukamoto, Junichi Uchikoshi, Masaki Otani, Shigeharu Goto, Yutaka Ie, Takabumi Nagai, Kenji Adachi, Kenta Arima, Mizuho Morita
  • Organizer: Extended Abstracts of Third International Symposium on Atomically Controlled Fabrication Technology
  • Place of Presentation: Osaka, Japan
  • Year and Date: 2010-11-24
• [Presentation] Consideration of photo-etching mechanism of Si with N-fluoropyridinium salt (2010)
  • Author(s): Kentaro Tsukamoto, Junichi Uchikoshi, Masaki Otani, Shigeharu Goto, Yutaka Ie, Takabumi Nagai, Kenji Adachi, Kenta Arima, Mizuho Morita
  • Organizer: Extended Abstracts of Third International Symposium on Atomically Controlled Fabrication Technology
  • Place of Presentation: 大阪大学中之島センター(大阪市)
  • Year and Date: 2010-11-24
• [Presentation] N-フルオロピリジニウム塩を用いたシリコンの光エッチング (2010)
  • Author(s): 足達健二、永井隆文、打越純一、塚本健太郎、大谷真輝、森田瑞穂
  • Organizer: 第34回フッ素化学討論会
  • Place of Presentation: 札幌市
  • Year and Date: 2010-10-19
• [Presentation] N-フルオロピリジニウム塩を用いたシリコンの光エッチング (2010)
  • Author(s): 足達健二、永井隆文、打越純一、塚本健太郎、大谷真輝、森田瑞穂
  • Organizer: 第34回フッ素化学討論会
  • Place of Presentation: 札幌サンプラザ(札幌市)
  • Year and Date: 2010-10-19
• [Presentation] N-フルオロピリジニウム塩を用いたシリコンの光エッチング機構の考察 (2010)
  • Author(s): 塚本健太郎、打越純一、後藤栄晴、大谷真輝、永井隆文、足達健二、有馬健太、森田瑞穂
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎市
  • Year and Date: 2010-09-14
• [Presentation] N-フルオロピリジニウム塩を用いたシリコンの光エッチング機構の考察 (2010)
  • Author(s): 塚本健太郎、打越純一、後藤栄晴、大谷真輝、永井隆文、足達健二、有馬健太、森田瑞穂
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学(長崎市)
  • Year and Date: 2010-09-14
• [Presentation] Formation of Three-Dimensional Shape in Silicon by Photo-etching withN-Fluoropyridinium Salts (2009)
  • Author(s): K.Tsukamoto, J.Uchikoshi, S.Goto, T.Nagai, K.Adachi, K.Arima, M.Morita
  • Organizer: Extended Abstracts of Second International Symposium on Atomically Controlled Fabrication Technology
  • Place of Presentation: Osaka, Japan
  • Year and Date: 2009-11-25
• [Presentation] Formation of Three-Dimensional Shape in Silicon by Photo-etching with N-Fluoropyridinium Salts (2009)
  • Author(s): K.Tsukamoto, J.Uchikoshi, S.Goto1, T.Nagai, K.Adachi, K.Arima, M.Morita
  • Organizer: Extended Abstracts of Second International Symposium on Atomically Controlled Fabrication Technology
  • Place of Presentation: Osaka, Japan
  • Year and Date: 2009-11-25
• [Presentation] Photo-etching of Silicon by N-Fluoropyridinium Salt (2009)
  • Author(s): Shigeharu Goto, Kentaro Tsukamoto, Tatsuya Kawase, Noritaka Ajari, Takabumi Nagai, Kenji Adachi, Junichi Uchikoshi, Mizuho Morita
  • Organizer: Abstracts of 216th Meeting of The Electrochemical Society
  • Place of Presentation: Vienna, Austria
  • Year and Date: 2009-10-06
• [Presentation] Surface Shape Measurements of Silicon Photo-etched with N-fluoropyridinium salts by Near-infrared Transmission Interferometry (2009)
  • Author(s): Junichi Uchikoshi, Noritaka Ajari, Kentaro Tsukamoto, Shigeharu Goto, Takabumi Nagai, Kenji Adachi, Kenta Arima, Mizuho Morita
  • Organizer: Extended Abstracts of International Workshop on X-ray Mirror Design, Fabrication, and Metrology
  • Place of Presentation: Suita, Osaka, Japan
  • Year and Date: 2009-09-22
• [Presentation] N-フルオロピリジニウム塩を用いたシリコンの3次元形状の作製 (2009)
  • Author(s): 塚本健太郎、後藤重晴、永井隆文、足達健二、打越純一、森田瑞穂
  • Organizer: 2009年度精密工学会秋季大会学術講演会
  • Place of Presentation: 神戸市
  • Year and Date: 2009-09-10
• [Presentation] N-フルオロピリジニウム塩を用いたシリコンの3次元形状の作製 (2009)
  • Author(s): 塚本健太郎、後藤重晴、永井隆文、足達健二、打越純一、森田瑞穂
  • Organizer: 2009年度精密工学会秋季大会学術講演会
  • Place of Presentation: 神戸市、日本
  • Year and Date: 2009-09-10
• [Presentation] N-フルオロピリジニウム塩を用いたシリコンの光エッチング (2009)
  • Author(s): 後藤栄晴、塚本健太郎、川瀬達也、阿砂利典孝、永井隆文、足達健二、打越純一、森田瑞穂
  • Organizer: 応用物理学会2009年度春季関係連合講演会
  • Place of Presentation: つくば市
  • Year and Date: 2009-04-01
• [Presentation] N-フルオロピリジニウム塩を用いたシリコンの光エッチング (2009)
  • Author(s): 塚本健太郎
  • Organizer: 応用物理学会2009年度春季関係連合講演会
  • Place of Presentation: 筑波大学
• [Remarks]
  • URL: http://www-pm.prec.eng.osaka-u.ac.jp
• [Remarks]
  • URL: http://www-pm.prec.eng.osaka-u.ac.jp/research.html
• [Patent(Industrial Property Rights)] 少なくとも片面が粗面化された太陽電池用基板 (2009)
  • Inventor(s): 森田瑞穂、打越純一、足達健二、永井隆文
  • Industrial Property Rights Holder: 大阪大学、ダイキン工業
  • Industrial Property Number: 2009-273464
  • Filing Date: 2009-12-01
• [Patent(Industrial Property Rights)] 特許権 (2009)
  • Inventor(s): 森田瑞穂、打越純一、足達健二、永井隆文
  • Industrial Property Rights Holder: 大阪大学
  • Industrial Property Number: 2008-085942
  • Filing Date: 2009-03-28