| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2010: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2009: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2008: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Research Abstract |
For high feature semiconductor devices, low temperature process technology for high quality MIS have been investigated by using ECR (electron cyclotron resonance plasma) sputtering. On Si-MIS, CV characteristics almost same as ideal one have been obtained for as-deposited MIS without post-deposition anneal by controlling the ion energy during ECR sputtering of dielectrics. On Ge-MIS, low midgap interface state density of 4.5x1010cm-2・eV-1 has been realized by room-temperature dielectric formation.
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