Preparation of CuInS_2 films by reactive-sputtering alternately Cu- and In-facing-targets
| Project/Area Number |
20560292
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Niigata University |
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Principal Investigator |
TSUBOI Nozomu Niigata University, 自然科学系, 教授 (70217371)
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| Co-Investigator(Renkei-kenkyūsha) |
OISHI Koichirou 長岡工業高等専門学校, 機械工学科, 准教授 (90300558)
TANAKA Kuihiko 長岡技術科学大学, 工学(系)研究科(研究院), 助教 (30334692)
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| Project Period (FY) |
2008 – 2010
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| Project Status |
Completed (Fiscal Year 2010)
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| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2010: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2009: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2008: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
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| Keywords | 薄膜太陽電池 / カルコパイライト / スパッタ法 / 硫化銅インジウム / 太陽電池 / 薄膜 / 化合物半導体 / 多元系 |
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| Research Abstract |
CuInS_2 films with various [Cu]/[In] ratios were deposited by sputtering alternatively Cu- and In-facing-targets under Ar-diluted CS_2 atmosphere. Composition of the films corresponded to the (Cu_xS)-(CuInS_2)-(CuIn_5S_8)-(In_2S_3) system line. Stoichiometric CuInS_2 films exhibited the absorption-edge corresponding to the energy-gap of CuInS_2. In CuInS_2 epitaxial films by multisource evaporation method, lattice strain as well as the [Cu]/[In] ratio was considered to be related with growth mechanism.
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Report
(4 results)
Research Products
(38 results)
