| Project/Area Number |
20560321
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Electron device/Electronic equipment
|
|---|
| Research Institution | Shinshu University |
|---|
Principal Investigator |
SATO Toshiro Shinshu University, 工学部, 教授 (50283239)
|
|---|
| Co-Investigator(Renkei-kenkyūsha) |
SONEHARA Makoto 信州大学, 工学部, 助教 (30456496)
|
|---|
| Research Collaborator |
IKEDA Kenji 太陽誘電株式会社, 研究開発センター, 主任
|
|---|
| Project Period (FY) |
2008 – 2010
|
| Project Status |
Completed (Fiscal Year 2010)
|
| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2010: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2009: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2008: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
|
|---|
| Keywords | 電子デバイス / 集積回路 / 磁性薄膜 / 高周波IC / 無線回路 |
|---|
| Research Abstract |
Microwave magnetic thin film devices, embedded in chip size package RF-IC for the 4th generation cell phone, have been fabricated and evaluated. Through the development of high-frequency magnetic materials and their device-application, the improvement schemes for device properties was established, and it was found that the introduction of magnetic material to IC-package is effective for suppressing local induced noise. In addition, basic investigation on the novel tunable inductor and the power inductor for integrated power supply for RF-ICs has also been done. Their new schemes will be effective as the fundamental techniques of the next generation RF-ICs.
|
