Fabrication of thin-film hydrogen sensors operating at room temperature by photochemical deposition and photochemical doping

• Project/Area Number: 20560323
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Nagoya Institute of Technology
• Principal Investigator: ICHIMURA Masaya Nagoya Institute of Technology, 工学研究科, 教授 (30203110)
• Project Period (FY): 2008 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000); Fiscal Year 2010: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000); Fiscal Year 2009: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000); Fiscal Year 2008: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
• Keywords: 水素センサー / 光化学堆積 / 酸化スズ / 紫外線照射 / 原子間力顕微鏡

Research Abstract

We fabricated highly sensitive room temperature hydrogen sensors based on SnO_2 films. The films were deposited by the photochemical deposition. The deposition solution contained 10mM of SnSO_4 (pH around 1.4). The solution dropped on the substrate was irradiated with the light. The sample annealed at 200℃ showed current increase by a factor>10^3 within 1 min for 5000 ppm hydrogen at room temperature. The sensitivity and response speed were further improved by UV irradiation using a low-pressure Hg lamp both in vacuum and in air.

Research Products

• [Journal Article] Properties of Gas Sensors Based on Photochemically Deposited Nanocrystalline SnO_2 Films (2010)
  • Author(s): M.Ichimura, Aodengbaoleer, T.Sueyoshi
  • Journal Title: Phys.Status Solidi C Vol.7 Pages: 1168-1171
  • Peer Reviewed
• [Journal Article] Properties of gas sensors based on photochemically deposited nanocrystalline SnO_2 films (2010)
  • Author(s): M.Ichimura, Aodengbaoleer, T.Sueyoshii
  • Journal Title: Physica Status Solidi C 7 Pages: 1168-1171
  • Peer Reviewed
• [Journal Article] Room Temperature Gas Sensor with a High Sensitivity to Hydrogen Based on SnO_2 Films Prepared by Photochemical Techniques (2009)
  • Author(s): M.Ichimura, T.Sueyoshi
  • Journal Title: Jpn.J.Appl.Phys. Vol.48 Pages: 15503-15503
  • Peer Reviewed
• [Journal Article] Room Temperature Gas Sensor with a High Sensitivity to Hydrogen Based on SnO_2 Films Prepared by Photochemical Techniques (2009)
  • Author(s): M.Ichimura, T.Sueyoshi
  • Journal Title: Japanese Journal of Applied Physics 48 Pages: 15503-15503
  • Peer Reviewed
• [Presentation] UV irradiation effects on hydrogen sensors based on SnO_2 thin films fabricated by the photochemical deposition (2010)
  • Author(s): Dengbaoleer An, M.Ichimura
  • Organizer: Renewable Energy 2010
  • Place of Presentation: 横浜
  • Year and Date: 2010-06-30
• [Presentation] UV irradiation effects on hydrogen sensors based on SnO_2 thin films fabricated by the photochemical deposition (2010)
  • Author(s): Dengbaoleer Ao, Masaya Ichimura
  • Organizer: RENEWABLE ENERGY 2010
  • Place of Presentation: 横浜
  • Year and Date: 2010-06-30
• [Presentation] Properties of gas sensors based on photochemically deposited nanocrystalline SnO_2 films (2009)
  • Author(s): M.Ichimura, Aodengbaoleer, T.Sueyoshi
  • Organizer: 23rd Int.Conf Amorphous and Nanocrystalline Semiconductors
  • Place of Presentation: Utrecht, Netherlands
  • Year and Date: 2009-08-24
• [Presentation] Properties of gas sensors based on photochemically deposited nanocrystalline SnO_2 films (2009)
  • Author(s): M.Ichimura
  • Organizer: 23rd Int. Conf. Amorphous and Nanocrystalline Semiconductors
  • Place of Presentation: Utrecht, Netherlands
  • Year and Date: 2009-08-24