Study on wave-guide quasi-planer hot electron bolometers.
Project/Area Number |
20560343
|
Research Category |
Grant-in-Aid for Scientific Research (C)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Electron device/Electronic equipment
|
Research Institution | National Institute of Information and Communications Technology |
Principal Investigator |
KAWAKAMI Akira National Institute of Information and Communications Technology, 未来ICT研究センターナノICTグループ, 主任研究員 (90359092)
|
Project Period (FY) |
2008 – 2010
|
Project Status |
Completed (Fiscal Year 2010)
|
Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2010: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2009: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2008: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
|
Keywords | HEB / NbN / エピタキシャル / テラヘルツ / 導波管 / ナノブリッジ / TiN |
Research Abstract |
To improve the IF bandwidth of hot-electron bolometers (HEB), we have developed fabrication process of quasi-planer nano-bridges. Quasi optical HEB mixers constructed by quasi-planer nano bridges were fabricated and the lengths and widths of nano-bridge were about 450 nm and 25 nm, respectively. The DSB receiver noise temperature and IF bandwidth were evaluated. The SiO_2 film having about 20 μm thickness was deposited as a substrate for waveguide mixers, and good flatness was confirmed.
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Report
(4 results)
Research Products
(13 results)