Development of high-pressure sensor device using metal-complex thin film
| Project/Area Number |
20750147
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Functional materials/Devices
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| Research Institution | Muroran Institute of Technology |
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Principal Investigator |
TAKEDA Keiki Muroran Institute of Technology, 大学院・工学研究科, 助教 (70352060)
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| Research Collaborator |
HAYASHI Junichi 室蘭工業大学, 技術部, 技術職員
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| Project Period (FY) |
2008 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2009: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2008: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
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| Keywords | 有機電子材料 / 一次元金属錯体 / 高圧力センサ / 圧力インジケータ / 薄膜 / 高圧力インジケータ / 粉末X線回折 / 吸収スペクトル / 圧カインジケータ |
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| Research Abstract |
Color change, absorption spectra, and crystal structure of thin films of bis(1,2-dionedioximato)metal(II) complexes have been studied at high pressures. The pressure-induced color change of these complexes films were studied systematically at various pressures, and these complexes were able to be used as high-pressure indicators. The pressure-induced peak shifts of the d-p transition absorption band were investigated, and these thin films were able to be used for pressure determination.
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Report
(3 results)
Research Products
(22 results)
