Research Project
Grant-in-Aid for Young Scientists (B)
The dopant distributions and high-k gate dielectrics in metal-oxide-semiconductor field effect transistor structure were analyzed by three dimensional atom probe tomography. The remarkable difference of dopant distribution between n-MOSFET and p-MOSFET was clearly observed. Futher investigations are needed for the high-k gate dielectrics structures obtained by three dimensional atom probe tomography.
All 2010 2009 2008
All Journal Article (8 results) (of which Peer Reviewed: 8 results) Presentation (15 results)
Ultramicroscopy 109
Pages: 1479-1484
Appl. Phys. Lett. 95
Appl.Phys.Lett. 95
鉄と鋼 95
Pages: 118-123
110007044500
Appl. Phys. Lett. 93
Appl. Phys. Lett. 92