High-k gate dielectrics investigated by laser-assisted three dimensional atom probe tomography
| Project/Area Number |
20760212
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tohoku University |
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Principal Investigator |
INOUE Koji Tohoku University, 工学研究科, 講師 (50344718)
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| Project Period (FY) |
2008 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2009: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2008: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
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| Keywords | アトムプローブ / MOSFET / High-k / ドーパント / 微細化 / 3次元アトムプローブ / MOSトランジスタ / High-Kゲート酸化膜 |
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| Research Abstract |
The dopant distributions and high-k gate dielectrics in metal-oxide-semiconductor field effect transistor structure were analyzed by three dimensional atom probe tomography. The remarkable difference of dopant distribution between n-MOSFET and p-MOSFET was clearly observed. Futher investigations are needed for the high-k gate dielectrics structures obtained by three dimensional atom probe tomography.
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Report
(3 results)
Research Products
(23 results)
